TWI386982B - 矽之選擇性摻雜方法及使用該方法處理之矽基材 - Google Patents

矽之選擇性摻雜方法及使用該方法處理之矽基材 Download PDF

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Publication number
TWI386982B
TWI386982B TW098112336A TW98112336A TWI386982B TW I386982 B TWI386982 B TW I386982B TW 098112336 A TW098112336 A TW 098112336A TW 98112336 A TW98112336 A TW 98112336A TW I386982 B TWI386982 B TW I386982B
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TW
Taiwan
Prior art keywords
glass
substrate
doping
mask
crucible
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TW098112336A
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English (en)
Chinese (zh)
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TW201003750A (en
Inventor
德克 漢伯曼
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吉伯史密德公司
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Publication of TW201003750A publication Critical patent/TW201003750A/zh
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Publication of TWI386982B publication Critical patent/TWI386982B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
TW098112336A 2008-04-14 2009-04-14 矽之選擇性摻雜方法及使用該方法處理之矽基材 TWI386982B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat

Publications (2)

Publication Number Publication Date
TW201003750A TW201003750A (en) 2010-01-16
TWI386982B true TWI386982B (zh) 2013-02-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098112336A TWI386982B (zh) 2008-04-14 2009-04-14 矽之選擇性摻雜方法及使用該方法處理之矽基材

Country Status (14)

Country Link
US (1) US8399343B2 (enExample)
EP (1) EP2277203B1 (enExample)
JP (1) JP5451742B2 (enExample)
KR (1) KR101577086B1 (enExample)
CN (1) CN102007599B (enExample)
AT (1) ATE548761T1 (enExample)
AU (1) AU2009237980B2 (enExample)
CA (1) CA2721298A1 (enExample)
DE (1) DE102008019402A1 (enExample)
ES (1) ES2383648T3 (enExample)
IL (1) IL208679A0 (enExample)
MX (1) MX2010011269A (enExample)
TW (1) TWI386982B (enExample)
WO (1) WO2009127369A1 (enExample)

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NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
DE102010020175A1 (de) * 2010-05-11 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103208560A (zh) * 2013-03-22 2013-07-17 江苏荣马新能源有限公司 一种晶体硅太阳能电池石蜡掩膜处理方法
CN103165758B (zh) * 2013-04-01 2015-08-26 南通大学 一种基于逆扩散的太阳能电池选择性掺杂方法
WO2018063350A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

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US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
US5543333A (en) * 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
US6096968A (en) * 1995-03-10 2000-08-01 Siemens Solar Gmbh Solar cell with a back-surface field
US20030134469A1 (en) * 1996-12-24 2003-07-17 Imec Vzw, A Research Center In The Country Of Belgium Semiconductor device with selectively diffused regions
TWI292390B (en) * 2001-10-10 2008-01-11 Merck Patent Gmbh Combined etching and doping media

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US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
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DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
DE19534574C2 (de) * 1995-09-18 1997-12-18 Fraunhofer Ges Forschung Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten
KR19990063990A (ko) * 1995-10-05 1999-07-26 로시 리차드 부분적으로 깊게 확산된 에미터가 있는 자가조정식(salde) 태양 전지 및 그 제조 방법
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
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JP2004281569A (ja) 2003-03-13 2004-10-07 Kyocera Corp 太陽電池素子の製造方法
JP4393938B2 (ja) * 2004-07-16 2010-01-06 信越化学工業株式会社 電極材料及び太陽電池、並びに太陽電池の製造方法
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JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
KR20080091102A (ko) * 2005-12-21 2008-10-09 선파워 코포레이션 배면 콘택트 태양 전지 구조 및 제조 공정
KR101181820B1 (ko) * 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
US5543333A (en) * 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
US6096968A (en) * 1995-03-10 2000-08-01 Siemens Solar Gmbh Solar cell with a back-surface field
US20030134469A1 (en) * 1996-12-24 2003-07-17 Imec Vzw, A Research Center In The Country Of Belgium Semiconductor device with selectively diffused regions
TWI292390B (en) * 2001-10-10 2008-01-11 Merck Patent Gmbh Combined etching and doping media

Also Published As

Publication number Publication date
DE102008019402A1 (de) 2009-10-15
ATE548761T1 (de) 2012-03-15
US8399343B2 (en) 2013-03-19
ES2383648T3 (es) 2012-06-25
KR20110081772A (ko) 2011-07-14
AU2009237980A1 (en) 2009-10-22
JP2011519477A (ja) 2011-07-07
EP2277203B1 (de) 2012-03-07
CA2721298A1 (en) 2009-10-22
TW201003750A (en) 2010-01-16
AU2009237980B2 (en) 2013-06-27
MX2010011269A (es) 2010-12-21
WO2009127369A1 (de) 2009-10-22
EP2277203A1 (de) 2011-01-26
KR101577086B1 (ko) 2015-12-11
CN102007599A (zh) 2011-04-06
CN102007599B (zh) 2012-09-26
JP5451742B2 (ja) 2014-03-26
US20110114168A1 (en) 2011-05-19
IL208679A0 (en) 2010-12-30

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