JP2011519477A5 - - Google Patents

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Publication number
JP2011519477A5
JP2011519477A5 JP2011504360A JP2011504360A JP2011519477A5 JP 2011519477 A5 JP2011519477 A5 JP 2011519477A5 JP 2011504360 A JP2011504360 A JP 2011504360A JP 2011504360 A JP2011504360 A JP 2011504360A JP 2011519477 A5 JP2011519477 A5 JP 2011519477A5
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JP
Japan
Prior art keywords
silicon
phosphosilicate glass
silicon substrate
masking
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011504360A
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English (en)
Japanese (ja)
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JP2011519477A (ja
JP5451742B2 (ja
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Publication date
Priority claimed from DE102008019402A external-priority patent/DE102008019402A1/de
Application filed filed Critical
Publication of JP2011519477A publication Critical patent/JP2011519477A/ja
Publication of JP2011519477A5 publication Critical patent/JP2011519477A5/ja
Application granted granted Critical
Publication of JP5451742B2 publication Critical patent/JP5451742B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011504360A 2008-04-14 2009-04-09 シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 Active JP5451742B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
DE102008019402.6 2008-04-14
PCT/EP2009/002671 WO2009127369A1 (de) 2008-04-14 2009-04-09 Verfahren zur selektiven dotierung von silizium sowie damit behandeltes silizium-substrat

Publications (3)

Publication Number Publication Date
JP2011519477A JP2011519477A (ja) 2011-07-07
JP2011519477A5 true JP2011519477A5 (enExample) 2012-06-07
JP5451742B2 JP5451742B2 (ja) 2014-03-26

Family

ID=40902842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011504360A Active JP5451742B2 (ja) 2008-04-14 2009-04-09 シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板

Country Status (14)

Country Link
US (1) US8399343B2 (enExample)
EP (1) EP2277203B1 (enExample)
JP (1) JP5451742B2 (enExample)
KR (1) KR101577086B1 (enExample)
CN (1) CN102007599B (enExample)
AT (1) ATE548761T1 (enExample)
AU (1) AU2009237980B2 (enExample)
CA (1) CA2721298A1 (enExample)
DE (1) DE102008019402A1 (enExample)
ES (1) ES2383648T3 (enExample)
IL (1) IL208679A0 (enExample)
MX (1) MX2010011269A (enExample)
TW (1) TWI386982B (enExample)
WO (1) WO2009127369A1 (enExample)

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Publication number Priority date Publication date Assignee Title
NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
DE102010020175A1 (de) * 2010-05-11 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103208560A (zh) * 2013-03-22 2013-07-17 江苏荣马新能源有限公司 一种晶体硅太阳能电池石蜡掩膜处理方法
CN103165758B (zh) * 2013-04-01 2015-08-26 南通大学 一种基于逆扩散的太阳能电池选择性掺杂方法
WO2018063350A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

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DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
US5543333A (en) * 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
DE19508712C2 (de) * 1995-03-10 1997-08-07 Siemens Solar Gmbh Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung
DE19534574C2 (de) * 1995-09-18 1997-12-18 Fraunhofer Ges Forschung Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten
BR9610739A (pt) * 1995-10-05 1999-07-13 Ebara Sola Inc Célula solar e processo para sua fabricação
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
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JP2000183379A (ja) * 1998-12-11 2000-06-30 Sanyo Electric Co Ltd 太陽電池の製造方法
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
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KR101181820B1 (ko) * 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen

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