MX2010011269A - Procedimiento para la dotacion selectiva de silicio y sustrato de silicio tratado con dicho procedimiento. - Google Patents
Procedimiento para la dotacion selectiva de silicio y sustrato de silicio tratado con dicho procedimiento.Info
- Publication number
- MX2010011269A MX2010011269A MX2010011269A MX2010011269A MX2010011269A MX 2010011269 A MX2010011269 A MX 2010011269A MX 2010011269 A MX2010011269 A MX 2010011269A MX 2010011269 A MX2010011269 A MX 2010011269A MX 2010011269 A MX2010011269 A MX 2010011269A
- Authority
- MX
- Mexico
- Prior art keywords
- silicon
- phosphorus
- silicon substrate
- silicate crystal
- regions
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 59
- 239000011574 phosphorus Substances 0.000 claims abstract description 59
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000005554 pickling Methods 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 abstract description 4
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229940124447 delivery agent Drugs 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000834 fixative Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008019402A DE102008019402A1 (de) | 2008-04-14 | 2008-04-14 | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
| PCT/EP2009/002671 WO2009127369A1 (de) | 2008-04-14 | 2009-04-09 | Verfahren zur selektiven dotierung von silizium sowie damit behandeltes silizium-substrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2010011269A true MX2010011269A (es) | 2010-12-21 |
Family
ID=40902842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2010011269A MX2010011269A (es) | 2008-04-14 | 2009-04-09 | Procedimiento para la dotacion selectiva de silicio y sustrato de silicio tratado con dicho procedimiento. |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US8399343B2 (enExample) |
| EP (1) | EP2277203B1 (enExample) |
| JP (1) | JP5451742B2 (enExample) |
| KR (1) | KR101577086B1 (enExample) |
| CN (1) | CN102007599B (enExample) |
| AT (1) | ATE548761T1 (enExample) |
| AU (1) | AU2009237980B2 (enExample) |
| CA (1) | CA2721298A1 (enExample) |
| DE (1) | DE102008019402A1 (enExample) |
| ES (1) | ES2383648T3 (enExample) |
| IL (1) | IL208679A0 (enExample) |
| MX (1) | MX2010011269A (enExample) |
| TW (1) | TWI386982B (enExample) |
| WO (1) | WO2009127369A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2000999C2 (nl) * | 2007-11-13 | 2009-05-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor. |
| DE102009051847A1 (de) | 2009-10-29 | 2011-05-19 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats |
| DE102010020175A1 (de) * | 2010-05-11 | 2011-11-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung |
| KR20130062775A (ko) | 2011-12-05 | 2013-06-13 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| CN103208560A (zh) * | 2013-03-22 | 2013-07-17 | 江苏荣马新能源有限公司 | 一种晶体硅太阳能电池石蜡掩膜处理方法 |
| CN103165758B (zh) * | 2013-04-01 | 2015-08-26 | 南通大学 | 一种基于逆扩散的太阳能电池选择性掺杂方法 |
| WO2018063350A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Methods and apparatus for gettering impurities in semiconductors |
| JP7526019B2 (ja) | 2020-03-27 | 2024-07-31 | 東京応化工業株式会社 | 積層体、積層体の製造方法、及び半導体基板の製造方法 |
| CN111916347B (zh) * | 2020-08-13 | 2023-03-21 | 中国电子科技集团公司第四十四研究所 | 一种用于soi片的磷扩散掺杂方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE627302A (enExample) | 1962-01-19 | |||
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
| US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
| DE2754833A1 (de) * | 1977-12-09 | 1979-06-13 | Ibm Deutschland | Phosphordiffusionsverfahren fuer halbleiteranwendungen |
| US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
| US4478879A (en) * | 1983-02-10 | 1984-10-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Screen printed interdigitated back contact solar cell |
| JPS6215864A (ja) * | 1985-07-15 | 1987-01-24 | Hitachi Ltd | 太陽電池の製造方法 |
| US5013396A (en) * | 1987-06-01 | 1991-05-07 | The Regents Of The University Of Michigan | Method of making an ultraminiature pressure sensor |
| DE4217428A1 (de) * | 1991-12-09 | 1993-06-17 | Deutsche Aerospace | Hochleistungs-solarzellenstruktur |
| US5543333A (en) * | 1993-09-30 | 1996-08-06 | Siemens Solar Gmbh | Method for manufacturing a solar cell having combined metallization |
| DE19508712C2 (de) * | 1995-03-10 | 1997-08-07 | Siemens Solar Gmbh | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
| DE19534574C2 (de) * | 1995-09-18 | 1997-12-18 | Fraunhofer Ges Forschung | Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten |
| BR9610739A (pt) * | 1995-10-05 | 1999-07-13 | Ebara Sola Inc | Célula solar e processo para sua fabricação |
| US5871591A (en) | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
| US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| JP2000183379A (ja) * | 1998-12-11 | 2000-06-30 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
| DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| NL1012961C2 (nl) * | 1999-09-02 | 2001-03-05 | Stichting Energie | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
| JP2004281569A (ja) * | 2003-03-13 | 2004-10-07 | Kyocera Corp | 太陽電池素子の製造方法 |
| JP4393938B2 (ja) * | 2004-07-16 | 2010-01-06 | 信越化学工業株式会社 | 電極材料及び太陽電池、並びに太陽電池の製造方法 |
| JP4481869B2 (ja) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
| JP2006310368A (ja) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
| CN102420271B (zh) * | 2005-12-21 | 2016-07-06 | 太阳能公司 | 背面触点太阳能电池及制造方法 |
| KR101181820B1 (ko) * | 2005-12-29 | 2012-09-11 | 삼성에스디아이 주식회사 | 태양 전지의 제조 방법 |
| DE102006003283A1 (de) * | 2006-01-23 | 2007-07-26 | Gp Solar Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen |
-
2008
- 2008-04-14 DE DE102008019402A patent/DE102008019402A1/de not_active Withdrawn
-
2009
- 2009-04-09 CN CN2009801131939A patent/CN102007599B/zh active Active
- 2009-04-09 AT AT09733502T patent/ATE548761T1/de active
- 2009-04-09 JP JP2011504360A patent/JP5451742B2/ja active Active
- 2009-04-09 WO PCT/EP2009/002671 patent/WO2009127369A1/de not_active Ceased
- 2009-04-09 KR KR1020107025363A patent/KR101577086B1/ko active Active
- 2009-04-09 AU AU2009237980A patent/AU2009237980B2/en not_active Ceased
- 2009-04-09 CA CA2721298A patent/CA2721298A1/en not_active Abandoned
- 2009-04-09 ES ES09733502T patent/ES2383648T3/es active Active
- 2009-04-09 EP EP09733502A patent/EP2277203B1/de active Active
- 2009-04-09 MX MX2010011269A patent/MX2010011269A/es active IP Right Grant
- 2009-04-14 TW TW098112336A patent/TWI386982B/zh not_active IP Right Cessation
-
2010
- 2010-10-13 IL IL208679A patent/IL208679A0/en unknown
- 2010-10-13 US US12/903,804 patent/US8399343B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE102008019402A1 (de) | 2009-10-15 |
| CN102007599A (zh) | 2011-04-06 |
| EP2277203B1 (de) | 2012-03-07 |
| ATE548761T1 (de) | 2012-03-15 |
| KR101577086B1 (ko) | 2015-12-11 |
| AU2009237980A1 (en) | 2009-10-22 |
| WO2009127369A1 (de) | 2009-10-22 |
| JP2011519477A (ja) | 2011-07-07 |
| TWI386982B (zh) | 2013-02-21 |
| US8399343B2 (en) | 2013-03-19 |
| JP5451742B2 (ja) | 2014-03-26 |
| AU2009237980B2 (en) | 2013-06-27 |
| CA2721298A1 (en) | 2009-10-22 |
| CN102007599B (zh) | 2012-09-26 |
| IL208679A0 (en) | 2010-12-30 |
| TW201003750A (en) | 2010-01-16 |
| EP2277203A1 (de) | 2011-01-26 |
| KR20110081772A (ko) | 2011-07-14 |
| ES2383648T3 (es) | 2012-06-25 |
| US20110114168A1 (en) | 2011-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MX2010011269A (es) | Procedimiento para la dotacion selectiva de silicio y sustrato de silicio tratado con dicho procedimiento. | |
| US11401194B2 (en) | Method and device for separating a substrate | |
| US20160059359A1 (en) | Method and device for providing through-openings in a substrate and a substrate produced in said manner | |
| JP2009135434A5 (enExample) | ||
| US11654657B2 (en) | Through glass via fabrication using a protective material | |
| US20130213467A1 (en) | Production of microholes | |
| JP6859496B1 (ja) | ガス孔をもつ半導体製造装置部品の洗浄方法 | |
| TW200737404A (en) | Semiconductor on glass insulator made using improved ion implantation process | |
| CN107039327A (zh) | 电子元件的制造方法及层叠体 | |
| JP2020532097A (ja) | 実効的に透明な接点の製造プロセス | |
| CN109659256A (zh) | 基板处理装置和基板处理方法 | |
| JP2011519477A5 (enExample) | ||
| CN104091772A (zh) | 晶圆边缘非晶碳薄膜清除装置及方法 | |
| CN103969966B (zh) | 一种光刻胶的去除方法 | |
| JP2014069981A (ja) | 基板加工装置及び基板加工方法 | |
| CN104332503A (zh) | 一种高压快恢复二极管芯片及其生产工艺 | |
| TWI784203B (zh) | 成膜裝置以及成膜方法 | |
| CN106711175A (zh) | 柔性基板剥离方法 | |
| CN110491993B (zh) | 一种pi基板的制备方法及其显示装置 | |
| JP5384966B2 (ja) | 表面処理装置 | |
| JP2013535527A (ja) | 蛍光粉層の作成方法 | |
| KR20210060614A (ko) | 막 형성 장치 | |
| US20230108352A1 (en) | Method of manufacturing cell unit substrate | |
| KR20230161413A (ko) | 기판으로부터 구조물을 분리하는 방법 | |
| RO125409A0 (ro) | Inducerea în plasmă rf de hidrogen şi procesarea laser a defectelor structurale în siliciu în vederea transferării de straturi monocristaline cu grosimi mai mici de 50 nm |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG | Grant or registration |