DE102008019402A1 - Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat - Google Patents
Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat Download PDFInfo
- Publication number
- DE102008019402A1 DE102008019402A1 DE102008019402A DE102008019402A DE102008019402A1 DE 102008019402 A1 DE102008019402 A1 DE 102008019402A1 DE 102008019402 A DE102008019402 A DE 102008019402A DE 102008019402 A DE102008019402 A DE 102008019402A DE 102008019402 A1 DE102008019402 A1 DE 102008019402A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- silicon substrate
- phosphorus
- phosphosilicate glass
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 30
- 239000011574 phosphorus Substances 0.000 claims abstract description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000000873 masking effect Effects 0.000 claims abstract description 19
- 239000005360 phosphosilicate glass Substances 0.000 claims abstract description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 12
- 239000005368 silicate glass Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 9
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008019402A DE102008019402A1 (de) | 2008-04-14 | 2008-04-14 | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
| AT09733502T ATE548761T1 (de) | 2008-04-14 | 2009-04-09 | Verfahren zur selektiven dotierung von silizium |
| AU2009237980A AU2009237980B2 (en) | 2008-04-14 | 2009-04-09 | Method for the selective doping of silicon and silicon substrate treated therewith |
| KR1020107025363A KR101577086B1 (ko) | 2008-04-14 | 2009-04-09 | 실리콘의 선택적인 도핑 방법 및 이 방법으로 처리된 실리콘 기판 |
| ES09733502T ES2383648T3 (es) | 2008-04-14 | 2009-04-09 | Procedimiento para la dotación selectiva de silicio |
| CA2721298A CA2721298A1 (en) | 2008-04-14 | 2009-04-09 | Method for the selective doping of silicon and silicon substrate treated therewith |
| JP2011504360A JP5451742B2 (ja) | 2008-04-14 | 2009-04-09 | シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 |
| MX2010011269A MX2010011269A (es) | 2008-04-14 | 2009-04-09 | Procedimiento para la dotacion selectiva de silicio y sustrato de silicio tratado con dicho procedimiento. |
| EP09733502A EP2277203B1 (de) | 2008-04-14 | 2009-04-09 | Verfahren zur selektiven dotierung von silizium |
| CN2009801131939A CN102007599B (zh) | 2008-04-14 | 2009-04-09 | 用于对硅进行选择性掺杂的方法以及使用该方法处理的硅衬底 |
| PCT/EP2009/002671 WO2009127369A1 (de) | 2008-04-14 | 2009-04-09 | Verfahren zur selektiven dotierung von silizium sowie damit behandeltes silizium-substrat |
| TW098112336A TWI386982B (zh) | 2008-04-14 | 2009-04-14 | 矽之選擇性摻雜方法及使用該方法處理之矽基材 |
| IL208679A IL208679A0 (en) | 2008-04-14 | 2010-10-13 | Method for the selective doping of silicon and silicon substrate treated therewith |
| US12/903,804 US8399343B2 (en) | 2008-04-14 | 2010-10-13 | Method for the selective doping of silicon and silicon substrate treated therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008019402A DE102008019402A1 (de) | 2008-04-14 | 2008-04-14 | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102008019402A1 true DE102008019402A1 (de) | 2009-10-15 |
Family
ID=40902842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102008019402A Withdrawn DE102008019402A1 (de) | 2008-04-14 | 2008-04-14 | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US8399343B2 (enExample) |
| EP (1) | EP2277203B1 (enExample) |
| JP (1) | JP5451742B2 (enExample) |
| KR (1) | KR101577086B1 (enExample) |
| CN (1) | CN102007599B (enExample) |
| AT (1) | ATE548761T1 (enExample) |
| AU (1) | AU2009237980B2 (enExample) |
| CA (1) | CA2721298A1 (enExample) |
| DE (1) | DE102008019402A1 (enExample) |
| ES (1) | ES2383648T3 (enExample) |
| IL (1) | IL208679A0 (enExample) |
| MX (1) | MX2010011269A (enExample) |
| TW (1) | TWI386982B (enExample) |
| WO (1) | WO2009127369A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011051356A1 (de) | 2009-10-29 | 2011-05-05 | Gebr. Schmid Gmbh & Co. | Verfahren und vorrichtung zur behandlung einer substratoberfläche eines substrats |
| CN111916347A (zh) * | 2020-08-13 | 2020-11-10 | 中国电子科技集团公司第四十四研究所 | 一种用于soi片的磷扩散掺杂方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2000999C2 (nl) * | 2007-11-13 | 2009-05-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor. |
| DE102010020175A1 (de) * | 2010-05-11 | 2011-11-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung |
| KR20130062775A (ko) | 2011-12-05 | 2013-06-13 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| CN103208560A (zh) * | 2013-03-22 | 2013-07-17 | 江苏荣马新能源有限公司 | 一种晶体硅太阳能电池石蜡掩膜处理方法 |
| CN103165758B (zh) * | 2013-04-01 | 2015-08-26 | 南通大学 | 一种基于逆扩散的太阳能电池选择性掺杂方法 |
| WO2018063350A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Methods and apparatus for gettering impurities in semiconductors |
| JP7526019B2 (ja) | 2020-03-27 | 2024-07-31 | 東京応化工業株式会社 | 積層体、積層体の製造方法、及び半導体基板の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871591A (en) | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
| DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| US20040242019A1 (en) * | 2001-10-10 | 2004-12-02 | Sylke Klein | Combined etching and doping substances |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE627302A (enExample) | 1962-01-19 | |||
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
| US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
| DE2754833A1 (de) * | 1977-12-09 | 1979-06-13 | Ibm Deutschland | Phosphordiffusionsverfahren fuer halbleiteranwendungen |
| US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
| US4478879A (en) * | 1983-02-10 | 1984-10-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Screen printed interdigitated back contact solar cell |
| JPS6215864A (ja) * | 1985-07-15 | 1987-01-24 | Hitachi Ltd | 太陽電池の製造方法 |
| US5013396A (en) * | 1987-06-01 | 1991-05-07 | The Regents Of The University Of Michigan | Method of making an ultraminiature pressure sensor |
| DE4217428A1 (de) * | 1991-12-09 | 1993-06-17 | Deutsche Aerospace | Hochleistungs-solarzellenstruktur |
| US5543333A (en) * | 1993-09-30 | 1996-08-06 | Siemens Solar Gmbh | Method for manufacturing a solar cell having combined metallization |
| DE19508712C2 (de) * | 1995-03-10 | 1997-08-07 | Siemens Solar Gmbh | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
| DE19534574C2 (de) * | 1995-09-18 | 1997-12-18 | Fraunhofer Ges Forschung | Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten |
| BR9610739A (pt) * | 1995-10-05 | 1999-07-13 | Ebara Sola Inc | Célula solar e processo para sua fabricação |
| US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| JP2000183379A (ja) * | 1998-12-11 | 2000-06-30 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
| NL1012961C2 (nl) * | 1999-09-02 | 2001-03-05 | Stichting Energie | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JP2004281569A (ja) * | 2003-03-13 | 2004-10-07 | Kyocera Corp | 太陽電池素子の製造方法 |
| JP4393938B2 (ja) * | 2004-07-16 | 2010-01-06 | 信越化学工業株式会社 | 電極材料及び太陽電池、並びに太陽電池の製造方法 |
| JP4481869B2 (ja) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
| JP2006310368A (ja) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
| CN102420271B (zh) * | 2005-12-21 | 2016-07-06 | 太阳能公司 | 背面触点太阳能电池及制造方法 |
| KR101181820B1 (ko) * | 2005-12-29 | 2012-09-11 | 삼성에스디아이 주식회사 | 태양 전지의 제조 방법 |
| DE102006003283A1 (de) * | 2006-01-23 | 2007-07-26 | Gp Solar Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen |
-
2008
- 2008-04-14 DE DE102008019402A patent/DE102008019402A1/de not_active Withdrawn
-
2009
- 2009-04-09 CN CN2009801131939A patent/CN102007599B/zh active Active
- 2009-04-09 AT AT09733502T patent/ATE548761T1/de active
- 2009-04-09 JP JP2011504360A patent/JP5451742B2/ja active Active
- 2009-04-09 WO PCT/EP2009/002671 patent/WO2009127369A1/de not_active Ceased
- 2009-04-09 KR KR1020107025363A patent/KR101577086B1/ko active Active
- 2009-04-09 AU AU2009237980A patent/AU2009237980B2/en not_active Ceased
- 2009-04-09 CA CA2721298A patent/CA2721298A1/en not_active Abandoned
- 2009-04-09 ES ES09733502T patent/ES2383648T3/es active Active
- 2009-04-09 EP EP09733502A patent/EP2277203B1/de active Active
- 2009-04-09 MX MX2010011269A patent/MX2010011269A/es active IP Right Grant
- 2009-04-14 TW TW098112336A patent/TWI386982B/zh not_active IP Right Cessation
-
2010
- 2010-10-13 IL IL208679A patent/IL208679A0/en unknown
- 2010-10-13 US US12/903,804 patent/US8399343B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871591A (en) | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
| DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| US20040242019A1 (en) * | 2001-10-10 | 2004-12-02 | Sylke Klein | Combined etching and doping substances |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011051356A1 (de) | 2009-10-29 | 2011-05-05 | Gebr. Schmid Gmbh & Co. | Verfahren und vorrichtung zur behandlung einer substratoberfläche eines substrats |
| DE102009051847A1 (de) | 2009-10-29 | 2011-05-19 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats |
| CN111916347A (zh) * | 2020-08-13 | 2020-11-10 | 中国电子科技集团公司第四十四研究所 | 一种用于soi片的磷扩散掺杂方法 |
| CN111916347B (zh) * | 2020-08-13 | 2023-03-21 | 中国电子科技集团公司第四十四研究所 | 一种用于soi片的磷扩散掺杂方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102007599A (zh) | 2011-04-06 |
| EP2277203B1 (de) | 2012-03-07 |
| ATE548761T1 (de) | 2012-03-15 |
| MX2010011269A (es) | 2010-12-21 |
| KR101577086B1 (ko) | 2015-12-11 |
| AU2009237980A1 (en) | 2009-10-22 |
| WO2009127369A1 (de) | 2009-10-22 |
| JP2011519477A (ja) | 2011-07-07 |
| TWI386982B (zh) | 2013-02-21 |
| US8399343B2 (en) | 2013-03-19 |
| JP5451742B2 (ja) | 2014-03-26 |
| AU2009237980B2 (en) | 2013-06-27 |
| CA2721298A1 (en) | 2009-10-22 |
| CN102007599B (zh) | 2012-09-26 |
| IL208679A0 (en) | 2010-12-30 |
| TW201003750A (en) | 2010-01-16 |
| EP2277203A1 (de) | 2011-01-26 |
| KR20110081772A (ko) | 2011-07-14 |
| ES2383648T3 (es) | 2012-06-25 |
| US20110114168A1 (en) | 2011-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2277203B1 (de) | Verfahren zur selektiven dotierung von silizium | |
| DE2718894C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE2462644C2 (de) | Verfahren zur Herstellung eines Transistors | |
| DE2928923C2 (enExample) | ||
| EP2338179B1 (de) | Verfahren zur behandlung von substraten und behandlungseinrichtung zur durchführung des verfahrens | |
| DE19534574C2 (de) | Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten | |
| DE2103468C3 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE102009041546A1 (de) | Verfahren zur Herstellung von Solarzellen mit selektivem Emitter | |
| DE3122771A1 (de) | "verfahren zur herstellung von sonnenzellen" | |
| DE2124764A1 (de) | Verfahren zur Herstellung einer Halb leiteranordnung | |
| DE1231812B (de) | Verfahren zur Herstellung von elektrischen Halbleiterbauelementen nach der Mesa-Diffusionstechnik | |
| DE102010010813A1 (de) | Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung | |
| DE102012200559A1 (de) | Verfahren zur Herstellung eines Emitters einer Solarzelle und Solarzelle | |
| DE102009018653A1 (de) | Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken | |
| DE102008029107B4 (de) | Verfahren zur Herstellung einer Metallstruktur auf einer Oberfläche eines Halbleitersubstrates | |
| DE102014117276A1 (de) | Verfahren und Vorrichtung zur unterseitigen Behandlung eines Substrats | |
| DE1464921B2 (de) | Verfahren zum herstellen einer halbleiteranordnung | |
| DE102011050214A1 (de) | Verfahren zur Herstellung einer Solarzelle mit einer mehrstufigen Dotierung | |
| DE2510951B2 (de) | Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung | |
| DE69225985T2 (de) | Lithografisches Verfahren für Halbleitersubstrat, insbesondere für die lokalisierte Behandlung eines hervorstehenden Teiles | |
| DE102012204346A1 (de) | Verfahren zur Herstellung eines beidseitig unterschiedlich dotierten Halbleiterwafers | |
| DE102022104191A1 (de) | Verfahren und nassbank zur in-line-prozessierung von solarzellensubstraten | |
| WO2023094327A1 (de) | Verfahren und nassbank zur in-line-prozessierung von solarzellensubstraten | |
| DE102010044350A1 (de) | Verfahren zur Herstellung einer Metallstruktur auf einer Oberfläche eines Halbleitersubstrates | |
| DE102013114426A1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| R081 | Change of applicant/patentee |
Owner name: GEBR. SCHMID GMBH, DE Free format text: FORMER OWNER: GEBR. SCHMID GMBH & CO., 72250 FREUDENSTADT, DE Effective date: 20120202 |
|
| R082 | Change of representative |
Representative=s name: PATENTANWAELTE RUFF, WILHELM, BEIER, DAUSTER &, DE Effective date: 20120202 |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20131101 |