KR101561209B1 - 크게 스트레스받는 채널들을 구비한 ｍｏｓ 디바이스들을 제조하는 방법 - Google Patents

크게 스트레스받는 채널들을 구비한 ｍｏｓ 디바이스들을 제조하는 방법 Download PDF

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KR101561209B1
KR101561209B1 KR1020117009989A KR20117009989A KR101561209B1 KR 101561209 B1 KR101561209 B1 KR 101561209B1 KR 1020117009989 A KR1020117009989 A KR 1020117009989A KR 20117009989 A KR20117009989 A KR 20117009989A KR 101561209 B1 KR101561209 B1 KR 101561209B1
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stress
silicon
depositing
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containing substrate
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KR20110081254A (ko
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프란크 빈 양
로히트 팔
마이클 제이. 하그로브
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/796—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020117009989A 2008-09-29 2009-09-28 크게 스트레스받는 채널들을 구비한 ｍｏｓ 디바이스들을 제조하는 방법 Active KR101561209B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/240,682 US7767534B2 (en) 2008-09-29 2008-09-29 Methods for fabricating MOS devices having highly stressed channels
US12/240,682 2008-09-29

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KR20110081254A KR20110081254A (ko) 2011-07-13
KR101561209B1 true KR101561209B1 (ko) 2015-10-16

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US (2) US7767534B2 (enExample)
EP (1) EP2335277B1 (enExample)
JP (1) JP5752041B2 (enExample)
KR (1) KR101561209B1 (enExample)
CN (1) CN102165571B (enExample)
WO (1) WO2010037036A1 (enExample)

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US20110101506A1 (en) * 2009-10-29 2011-05-05 International Business Machines Corporation Stress Memorization Technique Using Silicon Spacer
DE102010029532B4 (de) * 2010-05-31 2012-01-26 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Transistor mit eingebettetem verformungsinduzierenden Material, das in diamantförmigen Aussparungen auf der Grundlage einer Voramorphisierung hergestellt ist
US8816409B2 (en) * 2010-07-15 2014-08-26 United Microelectronics Corp. Metal-oxide semiconductor transistor
US8278196B2 (en) * 2010-07-21 2012-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. High surface dopant concentration semiconductor device and method of fabricating
US8551845B2 (en) 2010-09-21 2013-10-08 International Business Machines Corporation Structure and method for increasing strain in a device
US9202913B2 (en) * 2010-09-30 2015-12-01 Institute of Microelectronics, Chinese Academy of Sciences Method for manufacturing semiconductor structure
US8535999B2 (en) * 2010-10-12 2013-09-17 International Business Machines Corporation Stress memorization process improvement for improved technology performance
US20120196422A1 (en) * 2011-01-27 2012-08-02 Globalfoundries Inc. Stress Memorization Technique Using Gate Encapsulation
CN102637642B (zh) * 2011-02-12 2013-11-06 中芯国际集成电路制造(上海)有限公司 Cmos器件的制作方法
CN102790013B (zh) * 2011-05-16 2016-02-17 中芯国际集成电路制造(上海)有限公司 Cmos晶体管的制作方法
US8598005B2 (en) * 2011-07-18 2013-12-03 Spansion Llc Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devices
CN103021849B (zh) * 2011-09-20 2015-09-09 中芯国际集成电路制造(上海)有限公司 一种采用应力记忆技术的nmos器件制作方法
US8815712B2 (en) * 2011-12-28 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for epitaxial re-growth of semiconductor region
US8753969B2 (en) * 2012-01-27 2014-06-17 GlobalFoundries, Inc. Methods for fabricating MOS devices with stress memorization
CN103367151B (zh) * 2012-03-30 2015-12-16 中国科学院微电子研究所 使源/漏区更接近沟道区的mos器件及其制作方法
US8841190B2 (en) 2012-03-30 2014-09-23 The Institute of Microelectronics Chinese Academy of Science MOS device for making the source/drain region closer to the channel region and method of manufacturing the same
US8574978B1 (en) * 2012-04-11 2013-11-05 United Microelectronics Corp. Method for forming semiconductor device
TWI566299B (zh) * 2012-04-11 2017-01-11 聯華電子股份有限公司 半導體元件之製作方法
US8835243B2 (en) 2012-05-04 2014-09-16 United Microelectronics Corp. Semiconductor process
US8877599B2 (en) 2012-05-15 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a semiconductor device
US8772120B2 (en) * 2012-05-24 2014-07-08 United Microelectronics Corp. Semiconductor process
US8962433B2 (en) * 2012-06-12 2015-02-24 United Microelectronics Corp. MOS transistor process
US8716146B2 (en) * 2012-07-03 2014-05-06 Intermolecular, Inc Low temperature etching of silicon nitride structures using phosphoric acid solutions
KR101986538B1 (ko) 2012-09-21 2019-06-07 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9117925B2 (en) * 2013-01-31 2015-08-25 United Microelectronics Corp. Epitaxial process
US10438856B2 (en) 2013-04-03 2019-10-08 Stmicroelectronics, Inc. Methods and devices for enhancing mobility of charge carriers
US9947772B2 (en) 2014-03-31 2018-04-17 Stmicroelectronics, Inc. SOI FinFET transistor with strained channel
US9472642B2 (en) * 2014-12-09 2016-10-18 Globalfoundries Inc. Method of forming a semiconductor device structure and such a semiconductor device structure
CN105990093B (zh) * 2015-02-03 2019-01-18 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
CN104701234A (zh) * 2015-03-16 2015-06-10 上海华力微电子有限公司 一种半导体器件的制作方法
CN106158654B (zh) * 2015-04-20 2019-04-26 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
KR102414957B1 (ko) 2018-06-15 2022-06-29 삼성전자주식회사 반도체 장치의 제조 방법
US10529818B1 (en) * 2018-07-26 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with reduced flicker noise
JP7150524B2 (ja) * 2018-08-24 2022-10-11 キオクシア株式会社 半導体装置
CN110648907A (zh) * 2019-09-29 2020-01-03 武汉新芯集成电路制造有限公司 一种栅极及其制作方法
CN113506720B (zh) * 2021-06-21 2024-04-26 上海华力集成电路制造有限公司 一种晶圆背面平整度改善的方法

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JP5223285B2 (ja) * 2007-10-09 2013-06-26 富士通セミコンダクター株式会社 半導体装置の製造方法
US20090289284A1 (en) * 2008-05-23 2009-11-26 Chartered Semiconductor Manufacturing, Ltd. High shrinkage stress silicon nitride (SiN) layer for NFET improvement

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Publication number Publication date
EP2335277A1 (en) 2011-06-22
WO2010037036A1 (en) 2010-04-01
EP2335277B1 (en) 2015-07-22
US8076209B2 (en) 2011-12-13
US20100210084A1 (en) 2010-08-19
JP5752041B2 (ja) 2015-07-22
US20100081245A1 (en) 2010-04-01
JP2012504345A (ja) 2012-02-16
KR20110081254A (ko) 2011-07-13
CN102165571B (zh) 2013-07-31
CN102165571A (zh) 2011-08-24
US7767534B2 (en) 2010-08-03

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