KR101547168B1 - 발광 장치의 제작 방법 및 증착용 기판 - Google Patents

발광 장치의 제작 방법 및 증착용 기판 Download PDF

Info

Publication number
KR101547168B1
KR101547168B1 KR1020080104043A KR20080104043A KR101547168B1 KR 101547168 B1 KR101547168 B1 KR 101547168B1 KR 1020080104043 A KR1020080104043 A KR 1020080104043A KR 20080104043 A KR20080104043 A KR 20080104043A KR 101547168 B1 KR101547168 B1 KR 101547168B1
Authority
KR
South Korea
Prior art keywords
layer
substrate
light
opening
heat insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080104043A
Other languages
English (en)
Korean (ko)
Other versions
KR20090041347A (ko
Inventor
토모야 아오야마
요스케 사토
코헤이 요코야마
레나 타카하시
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20090041347A publication Critical patent/KR20090041347A/ko
Application granted granted Critical
Publication of KR101547168B1 publication Critical patent/KR101547168B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/048Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/382Contact thermal transfer or sublimation processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/382Contact thermal transfer or sublimation processes
    • B41M5/38242Contact thermal transfer or sublimation processes characterised by the use of different kinds of energy to effect transfer, e.g. heat and light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/656Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565Oxadiazole compounds
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322Composite web or sheet
    • Y10T428/24331Composite web or sheet including nonapertured component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020080104043A 2007-10-23 2008-10-23 발광 장치의 제작 방법 및 증착용 기판 Expired - Fee Related KR101547168B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-275066 2007-10-23
JP2007275066 2007-10-23

Publications (2)

Publication Number Publication Date
KR20090041347A KR20090041347A (ko) 2009-04-28
KR101547168B1 true KR101547168B1 (ko) 2015-09-04

Family

ID=40563927

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080104043A Expired - Fee Related KR101547168B1 (ko) 2007-10-23 2008-10-23 발광 장치의 제작 방법 및 증착용 기판

Country Status (3)

Country Link
US (2) US8153201B2 (enExample)
JP (2) JP5112257B2 (enExample)
KR (1) KR101547168B1 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090041314A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
US8425974B2 (en) * 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
KR101689519B1 (ko) * 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5079722B2 (ja) * 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5244680B2 (ja) * 2008-04-14 2013-07-24 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101629637B1 (ko) * 2008-05-29 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막방법 및 발광장치의 제조방법
JP4992975B2 (ja) * 2008-06-16 2012-08-08 東レ株式会社 パターニング方法およびこれを用いたデバイスの製造方法ならびにデバイス
JP5469950B2 (ja) * 2008-08-08 2014-04-16 株式会社半導体エネルギー研究所 発光装置の作製方法
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
WO2010113357A1 (ja) * 2009-04-03 2010-10-07 シャープ株式会社 ドナー基板、転写膜の製造方法、及び、有機電界発光素子の製造方法
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
JP5137917B2 (ja) * 2009-08-07 2013-02-06 株式会社半導体エネルギー研究所 成膜用基板、成膜方法及び発光素子の作製方法
JP5323784B2 (ja) * 2009-09-15 2013-10-23 フオン・アルデンネ・アンラーゲンテヒニク・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 微細構造を製造するための方法及び装置
KR101663840B1 (ko) * 2010-03-01 2016-10-07 가부시키가이샤 제이올레드 유기 el 장치 및 그 제조 방법
DE102010043204A1 (de) * 2010-08-10 2012-02-16 Von Ardenne Anlagentechnik Gmbh Verfahren und Verwendung einer Vorrichtung zur Erzeugung einer Schicht eines organischen Materials auf einem Substrat
KR101239808B1 (ko) * 2011-04-07 2013-03-06 순천향대학교 산학협력단 유기 발광 표시 장치의 제조 방법
KR101233629B1 (ko) * 2011-04-13 2013-02-15 에스엔유 프리시젼 주식회사 대용량 박막형성용 증착장치
KR102081209B1 (ko) * 2013-03-26 2020-02-26 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법, 및 그 유기 발광 표시 장치의 제조에 사용되는 도너 기판 및 도너 기판 세트
US9494792B2 (en) 2013-07-30 2016-11-15 Global Oled Technology Llc Local seal for encapsulation of electro-optical element on a flexible substrate
US9287522B2 (en) * 2013-07-30 2016-03-15 Global Oled Technology Llc Local seal for encapsulation of electro-optical element on a flexible substrate
US9385342B2 (en) 2013-07-30 2016-07-05 Global Oled Technology Llc Local seal for encapsulation of electro-optical element on a flexible substrate
CN105474769B (zh) 2013-08-21 2018-12-21 株式会社富士 供料器元件种类决定方法及供料器元件种类决定装置
KR20150109013A (ko) * 2014-03-18 2015-10-01 삼성디스플레이 주식회사 유기막 패턴 형성용 마스크, 이를 이용한 유기막 패턴 형성 방법 및 유기 발광 표시 장치의 제조 방법
KR20150135720A (ko) 2014-05-23 2015-12-03 삼성디스플레이 주식회사 도너마스크 및 이를 이용한 유기발광 디스플레이 장치 제조방법
KR20160003363A (ko) * 2014-06-30 2016-01-11 삼성디스플레이 주식회사 도너마스크 및 유기발광 디스플레이 장치 제조방법
KR20160017366A (ko) 2014-08-05 2016-02-16 삼성디스플레이 주식회사 광학 패터닝 마스크 및 이를 이용한 표시 장치의 제조 방법
KR102325208B1 (ko) 2014-08-12 2021-11-12 삼성디스플레이 주식회사 도너마스크, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
KR102162798B1 (ko) 2014-08-12 2020-10-08 삼성디스플레이 주식회사 증착장치 및 이를 이용한 유기발광 디스플레이 장치 제조방법
KR102181239B1 (ko) * 2014-09-03 2020-11-23 삼성디스플레이 주식회사 박막 형성 장치 및 그를 이용한 박막 형성 방법
KR102144855B1 (ko) 2014-09-03 2020-08-18 삼성디스플레이 주식회사 광학 마스크
KR20160030002A (ko) * 2014-09-05 2016-03-16 삼성디스플레이 주식회사 도너마스크 및 이를 이용한 유기발광 디스플레이 장치 제조방법
KR20160034529A (ko) 2014-09-19 2016-03-30 삼성디스플레이 주식회사 광학적 패턴 전사 마스크 및 그의 제조 방법
KR102303994B1 (ko) * 2014-10-20 2021-09-23 삼성디스플레이 주식회사 유기발광 표시기판의 제조방법
KR20160049610A (ko) 2014-10-27 2016-05-10 삼성디스플레이 주식회사 광학 패터닝 마스크 및 이를 이용한 표시 장치의 제조 방법
KR102427936B1 (ko) * 2015-02-11 2022-08-03 삼성디스플레이 주식회사 유기발광 표시장치 및 도너 기판
CN104762599A (zh) * 2015-04-15 2015-07-08 京东方科技集团股份有限公司 蒸镀方法和蒸镀装置
US9685349B2 (en) * 2015-10-08 2017-06-20 The United States Of America, As Represented By The Secretary Of The Navy Laser-induced forming and transfer of shaped metallic interconnects
US11089690B2 (en) * 2016-03-16 2021-08-10 Ncc Nano, Llc Method for depositing a functional material on a substrate
CA3019902C (en) * 2016-03-16 2022-06-21 Ncc Nano, Llc Method for depositing a functional material on a substrate
US20180171468A1 (en) * 2016-12-21 2018-06-21 Ncc Nano, Llc Method for deposting a functional material on a substrate
CN105655504B (zh) * 2016-04-11 2017-06-16 京东方科技集团股份有限公司 一种有机电致发光器件及其制备方法和显示面板
US10658630B2 (en) * 2017-11-01 2020-05-19 Boe Technology Group Co., Ltd. Evaporation plate for depositing deposition material on substrate, evaporation apparatus, and method of depositing deposition material on substrate
TWI701160B (zh) * 2019-05-14 2020-08-11 謙華科技股份有限公司 熱印頭模組及其製造方法
EP4340552A1 (en) * 2022-09-13 2024-03-20 Mycronic Ab Laser-induced forward transfer method and device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006309995A (ja) 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
JP2008066147A (ja) 2006-09-07 2008-03-21 Fuji Electric Holdings Co Ltd 蒸着によるパターン形成方法、該方法を含む色変換フィルタ基板およびカラー有機el素子の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8824366D0 (en) 1988-10-18 1988-11-23 Kodak Ltd Method of making colour filter array
JP3801730B2 (ja) 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマcvd装置及びそれを用いた薄膜形成方法
US5937272A (en) 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
KR100195176B1 (ko) * 1997-06-23 1999-06-15 손욱 열전사 필름
US5851709A (en) * 1997-10-31 1998-12-22 Eastman Kodak Company Method for selective transfer of a color organic layer
US6165543A (en) 1998-06-17 2000-12-26 Nec Corporation Method of making organic EL device and organic EL transfer base plate
JP2918037B1 (ja) 1998-06-18 1999-07-12 日本電気株式会社 カラー有機elディスプレイとその製造方法
DE60003281T2 (de) * 1999-01-15 2004-05-06 3M Innovative Properties Co., Saint Paul Thermisches Übertragungsverfahren.
JP3740557B2 (ja) 1999-03-09 2006-02-01 独立行政法人産業技術総合研究所 有機薄膜作製方法および有機薄膜作製装置
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW527735B (en) 1999-06-04 2003-04-11 Semiconductor Energy Lab Electro-optical device
JP4294305B2 (ja) 2001-12-12 2009-07-08 株式会社半導体エネルギー研究所 成膜装置および成膜方法
SG114589A1 (en) 2001-12-12 2005-09-28 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
US6703179B2 (en) 2002-03-13 2004-03-09 Eastman Kodak Company Transfer of organic material from a donor to form a layer in an OLED device
JP2004103406A (ja) 2002-09-10 2004-04-02 Sony Corp 薄膜パターン形成方法および装置並びに有機el表示装置の製造方法
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US20050145326A1 (en) 2004-01-05 2005-07-07 Eastman Kodak Company Method of making an OLED device
KR100667069B1 (ko) 2004-10-19 2007-01-10 삼성에스디아이 주식회사 도너 기판 및 그를 사용한 유기전계발광표시장치의 제조방법
TWI307612B (en) 2005-04-27 2009-03-11 Sony Corp Transfer method and transfer apparatus
JP2006344459A (ja) 2005-06-08 2006-12-21 Sony Corp 転写方法および転写装置
KR20090028413A (ko) 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판
KR20090041314A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
WO2009099002A1 (en) * 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
US7993945B2 (en) 2008-04-11 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5244680B2 (ja) 2008-04-14 2013-07-24 株式会社半導体エネルギー研究所 発光装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006309995A (ja) 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
JP2008066147A (ja) 2006-09-07 2008-03-21 Fuji Electric Holdings Co Ltd 蒸着によるパターン形成方法、該方法を含む色変換フィルタ基板およびカラー有機el素子の製造方法

Also Published As

Publication number Publication date
JP2013033752A (ja) 2013-02-14
US20120251772A1 (en) 2012-10-04
US9444051B2 (en) 2016-09-13
US8153201B2 (en) 2012-04-10
JP5433758B2 (ja) 2014-03-05
JP5112257B2 (ja) 2013-01-09
KR20090041347A (ko) 2009-04-28
JP2009123692A (ja) 2009-06-04
US20090104835A1 (en) 2009-04-23

Similar Documents

Publication Publication Date Title
KR101547168B1 (ko) 발광 장치의 제작 방법 및 증착용 기판
KR101689519B1 (ko) 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
CN101471423B (zh) 蒸镀用衬底及发光装置的制造方法
JP5244996B2 (ja) 照明装置の作製方法
US8277871B2 (en) Evaporation donor substrate and method for manufacturing light-emitting device
JP5394048B2 (ja) 蒸着用基板
JP5728068B2 (ja) 成膜用基板
US7993945B2 (en) Method for manufacturing light-emitting device
US8409672B2 (en) Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
KR20090041316A (ko) 성막 방법 및 발광 장치의 제작 방법
US8293319B2 (en) Method for manufacturing light-emitting device
JP5111427B2 (ja) 成膜用基板および成膜方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180718

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190820

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190820