JP2009123692A - 発光装置の作製方法および蒸着用基板 - Google Patents
発光装置の作製方法および蒸着用基板 Download PDFInfo
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- JP2009123692A JP2009123692A JP2008271536A JP2008271536A JP2009123692A JP 2009123692 A JP2009123692 A JP 2009123692A JP 2008271536 A JP2008271536 A JP 2008271536A JP 2008271536 A JP2008271536 A JP 2008271536A JP 2009123692 A JP2009123692 A JP 2009123692A
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- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
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- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
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- 239000010457 zeolite Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
【解決手段】開口部を有する反射層と、反射層上に形成され、反射層の開口部と重なる位置に開口部を有する断熱層と、反射層の開口部及び断熱層の開口部を覆って断熱層上に形成された光吸収層と、光吸収層上に形成された材料層と、が設けられている第1の基板を用いる。第1の基板の一方の面と第2の基板の被成膜面を近接させた状態で、第1の基板の他方の面側から光を照射する。照射された光は、反射層の開口部と重なる位置にある光吸収層に吸収され、蒸着材料を加熱する。加熱された蒸着材料は、第2の基板に蒸着される。
【選択図】図1
Description
本発明に係る発光装置の作製方法および蒸着用基板を、図1を用いて説明する。
本実施の形態では、上記実施の形態とは異なる構成を有する本発明に係る蒸着用基板について説明する。なお、本実施の形態に示す蒸着用基板において、特に記載がない場合には、上記実施の形態と同様の材料及び作製方法によって形成するものとする。
本実施の形態では、上記実施の形態で説明した蒸着用基板を用いてフルカラー表示装置を作製する方法について説明する。
本実施の形態では、本発明に係る発光装置の作製を可能とする成膜装置の例について説明する。本実施の形態に係る成膜装置の断面の模式図を図6、図7に示す。
本実施の形態では、本発明に係る発光装置の作製を可能とする成膜装置の例について説明する。
本実施の形態では、本発明を適用して、発光素子および発光装置を作製する方法について説明する。
本実施の形態では、本発明を適用して作製した発光装置を用いて完成させた様々な電子機器について、図15、図16を用いて説明する。
103 反射層
105 光吸収層
107 断熱層
109 材料層
111 基板
113 電極層
115 絶縁物
117 EL層
121 基板
127 EL層
Claims (21)
- 開口部を有する反射層と、
前記反射層上に形成され、前記反射層の開口部と重なる位置に開口部を有する断熱層と、
前記反射層の開口部及び前記断熱層の開口部を覆って、前記断熱層上に形成された光吸収層と、
前記光吸収層上に形成された材料層と、を有する第1の基板の一方の面と、
第2の基板の被成膜面と、を対向させて配置し、
前記第1の基板の他方の面側から光の照射を行い、
前記第2の基板の被成膜面の、前記反射層の開口部及び前記断熱層の開口部と重なる領域にEL層を形成することを特徴とする発光装置の作製方法。 - 開口部を有する反射層と、
前記反射層の開口部を覆って、前記反射層上に形成された光吸収層と、
前記光吸収層上に形成され、前記反射層の開口部と重なる位置に開口部を有する断熱層と、
前記断熱層の開口部を覆って、前記断熱層上に形成された材料層と、を有する第1の基板の一方の面と、
第2の基板の被成膜面と、を対向させて配置し、
前記第1の基板の他方の面側から光の照射を行い、
前記第2の基板の被成膜面の、前記反射層の開口部及び前記断熱層の開口部と重なる領域にEL層を形成することを特徴とする発光装置の作製方法。 - 第1の基板上に、開口部を有する反射層を形成し、
前記反射層上に、前記反射層の開口部と重なる位置に開口部を有する断熱層を形成し、
前記断熱層上に、前記反射層の開口部及び前記断熱層の開口部を覆う光吸収層を形成し、
前記光吸収層上に、材料層を形成し、
前記第1の基板の一方の面と、第2の基板の被成膜面とを対向させて配置し、
前記第1の基板の他方の面側から光の照射を行い
前記第2の基板の被成膜面の、前記反射層の開口部及び前記断熱層の開口部と重なる領域にEL層を形成することを特徴とする発光装置の作製方法 - 第1の基板上に、開口部を有する反射層を形成し、
前記反射層上に、前記反射層の開口部を覆う光吸収層を形成し、
前記光吸収層上に、前記反射層の開口部と重なる位置に開口部を有する断熱層を形成し、
前記断熱層上に、前記断熱層の開口部を覆う材料層を形成し、
前記第1の基板の一方の面と、第2の基板の被成膜面と、を対向させて配置し、
前記第1の基板の他方の面側から光の照射を行い
前記第2の基板の被成膜面の、前記反射層の開口部及び前記断熱層の開口部と重なる領域にEL層を形成することを特徴とする発光装置の作製方法 - 請求項1乃至請求項4のいずれか一において、
前記断熱層は、前記光吸収層及び前記反射層よりも熱伝導率の低い材料で形成されていることを特徴とする発光装置の作製方法。 - 請求項1乃至請求項5のいずれか一において、
前記断熱層の膜厚は、10nm以上2μm以下であることを特徴とする発光装置の作製方法。 - 請求項1乃至請求項6のいずれか一において、
前記光吸収層は、島状に形成されていることを特徴とする発光装置の作製方法。 - 請求項1乃至請求項7のいずれか一において、
前記光吸収層の膜厚は、100nm以上600nm以下であることを特徴とする発光装置の作製方法。 - 請求項1乃至請求項8のいずれか一において、
前記反射層は、前記第1の基板に照射する光に対する反射率が85%以上の材料で形成されていることを特徴とする発光装置の作製方法。 - 請求項1乃至請求項9のいずれか一において、
前記光吸収層は、前記第1の基板に照射する光に対する反射率が70%以下の材料で形成されていることを特徴とする発光装置の作製方法。 - 請求項1乃至請求項10のいずれか一において、
前記材料層は、有機化合物を含むことを特徴とする発光装置の作製方法。 - 請求項1乃至請求項11のいずれか一において、
前記材料層は、発光材料またはキャリア輸送材料の一方または両方を含むことを特徴とする発光装置の作製方法。 - 請求項1乃至請求項12のいずれか一において、
前記第2の基板の被成膜面には、第1の電極が設けられており、
前記第1の基板の前記材料層を昇華させ、前記第2の基板の前記第1の電極上に蒸着させた後、
前記第2の基板上に第2の電極を形成することを特徴とする発光装置の作製方法。 - 基板上に形成された開口部を有する反射層と、
前記反射層上に形成され、前記反射層の開口部と重なる位置に開口部を有する断熱層と、
前記反射層の開口部及び前記断熱層の開口部を覆って、前記断熱層上に形成された光吸収層と、
前記光吸収層上に形成された材料層と、を有することを特徴とする蒸着用基板。 - 基板上に形成された開口部を有する反射層と、
前記反射層の開口部を覆って、前記反射層上に形成された光吸収層と、
前記光吸収層上に形成され、前記反射層の開口部と重なる位置に開口部を有する断熱層と、
前記断熱層の開口部を覆って、前記断熱層上に形成された材料層と、を有することを特徴とする蒸着用基板。 - 請求項14または請求項15において、
前記光吸収層は、島状に形成されていることを特徴とする蒸着用基板。 - 請求項14乃至請求項16のいずれか一において、
前記断熱層は、前記反射層及び前記光吸収層よりも熱伝導率が低い材料で形成されていることを特徴とする蒸着用基板。 - 請求項14乃至請求項17のいずれか一において、
前記断熱層の膜厚は、10nm以上2μm以下であることを特徴とする蒸着用基板。 - 請求項14乃至請求項18のいずれか一において、
前記光吸収層の膜厚は、100nm以上600nm以下であることを特徴とする蒸着用基板。 - 請求項14乃至請求項19のいずれか一において、
前記材料層は有機化合物を含むことを特徴とする蒸着用基板。 - 請求項14乃至請求項19のいずれか一において、
前記材料層は、発光材料またはキャリア輸送材料の一方または両方を含むことを特徴とする蒸着用基板。
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WO2010113357A1 (ja) * | 2009-04-03 | 2010-10-07 | シャープ株式会社 | ドナー基板、転写膜の製造方法、及び、有機電界発光素子の製造方法 |
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KR102427936B1 (ko) * | 2015-02-11 | 2022-08-03 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 도너 기판 |
CN104762599A (zh) * | 2015-04-15 | 2015-07-08 | 京东方科技集团股份有限公司 | 蒸镀方法和蒸镀装置 |
US9685349B2 (en) * | 2015-10-08 | 2017-06-20 | The United States Of America, As Represented By The Secretary Of The Navy | Laser-induced forming and transfer of shaped metallic interconnects |
US11089690B2 (en) * | 2016-03-16 | 2021-08-10 | Ncc Nano, Llc | Method for depositing a functional material on a substrate |
US20180171468A1 (en) * | 2016-12-21 | 2018-06-21 | Ncc Nano, Llc | Method for deposting a functional material on a substrate |
CN105655504B (zh) * | 2016-04-11 | 2017-06-16 | 京东方科技集团股份有限公司 | 一种有机电致发光器件及其制备方法和显示面板 |
EP3704285A4 (en) * | 2017-11-01 | 2021-06-30 | BOE Technology Group Co., Ltd. | EVAPORATION PLATE FOR DEPOSITING A DEPOSIT MATERIAL ON A SUBSTRATE, EVAPORATION APPARATUS AND PROCESS FOR DEPOSITING A DEPOSIT MATERIAL ON A SUBSTRATE |
TWI701160B (zh) * | 2019-05-14 | 2020-08-11 | 謙華科技股份有限公司 | 熱印頭模組及其製造方法 |
EP4340552A1 (en) * | 2022-09-13 | 2024-03-20 | Mycronic Ab | Laser-induced forward transfer method and device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11237504A (ja) * | 1997-10-31 | 1999-08-31 | Eastman Kodak Co | カラー有機層の選択的転写方法 |
JP2006123546A (ja) * | 2004-10-19 | 2006-05-18 | Samsung Sdi Co Ltd | ドナー基板,有機電界発光表示装置の製造方法 |
JP2006309995A (ja) * | 2005-04-27 | 2006-11-09 | Sony Corp | 転写用基板および表示装置の製造方法ならびに表示装置 |
JP2008066147A (ja) * | 2006-09-07 | 2008-03-21 | Fuji Electric Holdings Co Ltd | 蒸着によるパターン形成方法、該方法を含む色変換フィルタ基板およびカラー有機el素子の製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8824366D0 (en) | 1988-10-18 | 1988-11-23 | Kodak Ltd | Method of making colour filter array |
JP3801730B2 (ja) | 1997-05-09 | 2006-07-26 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及びそれを用いた薄膜形成方法 |
US5937272A (en) | 1997-06-06 | 1999-08-10 | Eastman Kodak Company | Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate |
KR100195176B1 (ko) * | 1997-06-23 | 1999-06-15 | 손욱 | 열전사 필름 |
US6165543A (en) | 1998-06-17 | 2000-12-26 | Nec Corporation | Method of making organic EL device and organic EL transfer base plate |
JP2918037B1 (ja) | 1998-06-18 | 1999-07-12 | 日本電気株式会社 | カラー有機elディスプレイとその製造方法 |
DE60035078T2 (de) * | 1999-01-15 | 2008-01-31 | 3M Innovative Properties Co., St. Paul | Herstellungsverfahren eines Donorelements für Übertragung durch Wärme |
JP3740557B2 (ja) | 1999-03-09 | 2006-02-01 | 独立行政法人産業技術総合研究所 | 有機薄膜作製方法および有機薄膜作製装置 |
TW527735B (en) | 1999-06-04 | 2003-04-11 | Semiconductor Energy Lab | Electro-optical device |
US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
JP4294305B2 (ja) | 2001-12-12 | 2009-07-08 | 株式会社半導体エネルギー研究所 | 成膜装置および成膜方法 |
SG114589A1 (en) | 2001-12-12 | 2005-09-28 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
US6703179B2 (en) | 2002-03-13 | 2004-03-09 | Eastman Kodak Company | Transfer of organic material from a donor to form a layer in an OLED device |
JP2004103406A (ja) | 2002-09-10 | 2004-04-02 | Sony Corp | 薄膜パターン形成方法および装置並びに有機el表示装置の製造方法 |
JP4493926B2 (ja) | 2003-04-25 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 製造装置 |
US20050145326A1 (en) | 2004-01-05 | 2005-07-07 | Eastman Kodak Company | Method of making an OLED device |
TWI307612B (en) | 2005-04-27 | 2009-03-11 | Sony Corp | Transfer method and transfer apparatus |
JP2006344459A (ja) | 2005-06-08 | 2006-12-21 | Sony Corp | 転写方法および転写装置 |
KR20090028413A (ko) | 2007-09-13 | 2009-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 제작방법 및 증착용 기판 |
KR20090041314A (ko) | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판 및 발광장치의 제조방법 |
WO2009099002A1 (en) * | 2008-02-04 | 2009-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing light-emitting device |
US7993945B2 (en) | 2008-04-11 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
JP5244680B2 (ja) | 2008-04-14 | 2013-07-24 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
-
2008
- 2008-10-21 US US12/254,966 patent/US8153201B2/en not_active Expired - Fee Related
- 2008-10-22 JP JP2008271536A patent/JP5112257B2/ja not_active Expired - Fee Related
- 2008-10-23 KR KR1020080104043A patent/KR101547168B1/ko active IP Right Grant
-
2012
- 2012-04-09 US US13/442,133 patent/US9444051B2/en not_active Expired - Fee Related
- 2012-10-10 JP JP2012224673A patent/JP5433758B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11237504A (ja) * | 1997-10-31 | 1999-08-31 | Eastman Kodak Co | カラー有機層の選択的転写方法 |
JP2006123546A (ja) * | 2004-10-19 | 2006-05-18 | Samsung Sdi Co Ltd | ドナー基板,有機電界発光表示装置の製造方法 |
JP2006309995A (ja) * | 2005-04-27 | 2006-11-09 | Sony Corp | 転写用基板および表示装置の製造方法ならびに表示装置 |
JP2008066147A (ja) * | 2006-09-07 | 2008-03-21 | Fuji Electric Holdings Co Ltd | 蒸着によるパターン形成方法、該方法を含む色変換フィルタ基板およびカラー有機el素子の製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009174048A (ja) * | 2007-12-26 | 2009-08-06 | Semiconductor Energy Lab Co Ltd | 蒸着用基板、蒸着用基板の作製方法、および発光装置の作製方法 |
US9159923B2 (en) | 2007-12-26 | 2015-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation donor substrate, method for manufacturing the same, and method for manufacturing light-emitting device |
WO2010113357A1 (ja) * | 2009-04-03 | 2010-10-07 | シャープ株式会社 | ドナー基板、転写膜の製造方法、及び、有機電界発光素子の製造方法 |
US8618568B2 (en) | 2009-04-22 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device and film formation substrate |
JP2011040186A (ja) * | 2009-08-07 | 2011-02-24 | Semiconductor Energy Lab Co Ltd | 成膜用基板、成膜方法及び発光素子の作製方法 |
KR101412181B1 (ko) * | 2009-09-15 | 2014-06-25 | 폰 아르데네 게엠베하 | 기판상에 재료를 국부적으로 증착하기 위한 방법 및 장치 |
US10130019B2 (en) | 2013-08-21 | 2018-11-13 | Fuji Corporation | Feeder component type determination method and feeder component type determination device |
Also Published As
Publication number | Publication date |
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US20120251772A1 (en) | 2012-10-04 |
JP5433758B2 (ja) | 2014-03-05 |
KR20090041347A (ko) | 2009-04-28 |
US8153201B2 (en) | 2012-04-10 |
US20090104835A1 (en) | 2009-04-23 |
JP5112257B2 (ja) | 2013-01-09 |
KR101547168B1 (ko) | 2015-09-04 |
US9444051B2 (en) | 2016-09-13 |
JP2013033752A (ja) | 2013-02-14 |
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