JP2009174048A - 蒸着用基板、蒸着用基板の作製方法、および発光装置の作製方法 - Google Patents
蒸着用基板、蒸着用基板の作製方法、および発光装置の作製方法 Download PDFInfo
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- JP2009174048A JP2009174048A JP2008323518A JP2008323518A JP2009174048A JP 2009174048 A JP2009174048 A JP 2009174048A JP 2008323518 A JP2008323518 A JP 2008323518A JP 2008323518 A JP2008323518 A JP 2008323518A JP 2009174048 A JP2009174048 A JP 2009174048A
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- MGTBOQGGXOGCEM-UHFFFAOYSA-N c1ccc(cc1)-c1c2ccccc2c(-c2c3ccccc3c(-c3ccccc3)c3ccccc23)c2ccccc12.c1ccc(cc1)-c1ccccc1-c1c2ccccc2c(-c2c3ccccc3c(-c3ccccc3-c3ccccc3)c3ccccc23)c2ccccc12 Chemical group c1ccc(cc1)-c1c2ccccc2c(-c2c3ccccc3c(-c3ccccc3)c3ccccc23)c2ccccc12.c1ccc(cc1)-c1ccccc1-c1c2ccccc2c(-c2c3ccccc3c(-c3ccccc3-c3ccccc3)c3ccccc23)c2ccccc12 MGTBOQGGXOGCEM-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- BHQBDOOJEZXHPS-UHFFFAOYSA-N ctk3i0272 Chemical group C1=CC=CC=C1C(C(=C(C=1C=CC=CC=1)C(=C1C=2C=CC=CC=2)C=2C3=CC=CC=C3C(C=3C4=CC=CC=C4C(C=4C(=C(C=5C=CC=CC=5)C(C=5C=CC=CC=5)=C(C=5C=CC=CC=5)C=4C=4C=CC=CC=4)C=4C=CC=CC=4)=C4C=CC=CC4=3)=C3C=CC=CC3=2)C=2C=CC=CC=2)=C1C1=CC=CC=C1 BHQBDOOJEZXHPS-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- WOYDRSOIBHFMGB-UHFFFAOYSA-N n,9-diphenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 WOYDRSOIBHFMGB-UHFFFAOYSA-N 0.000 description 1
- AJNJGJDDJIBTBP-UHFFFAOYSA-N n-(9,10-diphenylanthracen-2-yl)-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 AJNJGJDDJIBTBP-UHFFFAOYSA-N 0.000 description 1
- UMFJAHHVKNCGLG-UHFFFAOYSA-N n-Nitrosodimethylamine Chemical compound CN(C)N=O UMFJAHHVKNCGLG-UHFFFAOYSA-N 0.000 description 1
- VZYZZKOUCVXTOJ-UHFFFAOYSA-N n-[4-[4-(n-(9,9-dimethylfluoren-2-yl)anilino)phenyl]phenyl]-9,9-dimethyl-n-phenylfluoren-2-amine Chemical group C1=C2C(C)(C)C3=CC=CC=C3C2=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=C2C(C)(C)C3=CC=CC=C3C2=CC=1)C1=CC=CC=C1 VZYZZKOUCVXTOJ-UHFFFAOYSA-N 0.000 description 1
- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- HCIIFBHDBOCSAF-UHFFFAOYSA-N octaethylporphyrin Chemical compound N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 HCIIFBHDBOCSAF-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
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Abstract
【解決手段】基板上に開口部を有する反射層を形成し、基板および反射層上に透光性を有する断熱層をそれぞれ分離形成し、断熱層上に光吸収層をそれぞれ形成し、光吸収層上に材料層をそれぞれ形成することによって得られる蒸着用基板を作製する。
【選択図】図1
Description
本実施の形態1では、本発明の一態様として、蒸着用基板の作製方法について説明する。
本実施の形態2では、実施の形態1で説明した蒸着用基板とは構造の異なる蒸着用基板について図2を用いて説明する。
本実施の形態3では、蒸着用基板を用いた成膜方法について説明する。なお、本実施の形態3では、実施の形態1で説明した蒸着用基板を用いて発光素子のEL層を形成する場合について説明する。また、本実施の形態で説明する成膜方法には、実施の形態2で示した蒸着用基板を用いることもできる。
本実施の形態4では、蒸着用基板を複数用いて、発光素子のEL層を形成することにより、フルカラー表示が可能な発光装置の作製方法について説明する。
本実施の形態では、発光装置の作製を可能とする成膜装置の例について説明する。本実施の形態に係る成膜装置の断面の模式図を図7、図8に示す。
本実施の形態6では、蒸着用基板にレーザを照射させることにより蒸着を行う成膜装置の例について説明する。
本実施の形態では、発光素子および発光装置を作製する方法について説明する。
本実施の形態8では、実施の形態7で説明した発光素子を用いて形成される発光装置について説明する。
本実施の形態では、発光装置を用いて完成させた様々な電子機器について、図14を用いて説明する。
102 反射層
103 開口部
104 断熱層
105 光吸収層
106 材料層
201 基板
202 反射層
203 断熱層
204 反射層
205 断熱層
206 開口部
207 光吸収層
208 材料層
301 基板
302 第1の電極
303 絶縁物
304 光
305 EL層
401 反射層
402 開口部
411 EL層(R)
412 EL層(G)
413 EL層(B)
414 絶縁物
501 反射層
502 開口部
511 EL層(R)
512 EL層(G)
513 EL層(B)
514 絶縁物
601 反射層
602 開口部
611 EL層(R)
612 EL層(G)
613 EL層(B)
701 成膜室
702 第1のゲート弁
703 第2のゲート弁
704 蒸着用基板支持機構
705 被成膜基板支持機構
707 蒸着用基板
708 材料層
709 被成膜基板
710 光源
711 チューブ
801 成膜室
802 第1のゲート弁
803 第2のゲート弁
804 蒸着用基板支持機構
805 被成膜基板支持機構
807 蒸着用基板
808 材料層
809 被成膜基板
810 光源
851 成膜室
854 蒸着用基板支持機構
855 被成膜基板支持機構
857 蒸着用基板
858 材料層
859 被成膜基板
860 光源
900 被成膜基板
901 蒸着用基板
903 レーザ発振装置
904 第1の光学系
905 第2の光学系
906 第3の光学系
907 反射ミラー
908 撮像素子
909 基板ステージ
910 反射層
911 断熱層
912 光吸収層
913 材料層
914 開口部
915 材料層
916 制御装置
1001 基板
1002 第1の電極
1003 EL層
1004 第2の電極
1011 正孔注入層
1012 正孔輸送層
1013 発光層
1014 電子輸送層
1015 電子注入層
1101 基板
1104 絶縁層
1113 第1の電極
1114 隔壁
1115R EL層(赤)
1115G EL層(緑)
1115B EL層(青)
1116 第2の電極
1121 発光領域
1122 隔壁
1201 基板
1202 データ線
1203 走査線
1204 隔壁
1205 領域
1206 入力端子
1207 入力端子
1208 接続配線
1300 EL層
1301 駆動回路部(ソース側駆動回路)
1302 画素部
1303 駆動回路部(ゲート側駆動回路)
1304 封止基板
1305 シール材
1307 空間
1308 配線
1309 FPC(フレキシブルプリントサーキット)
1310 素子基板
1311 スイッチング用TFT
1312 電流制御用TFT
1313 第1の電極
1314 絶縁物
1315 発光素子
1316 第2の電極
1323 nチャネル型TFT
1324 pチャネル型TFT
1501 本体
1502 筐体
1503 筐体
1504 表示部
1505 スピーカー
1506 マイクロフォン
1507 操作キー
1508 ポインティングマウス
1509 カメラ用レンズ
1510 外部接続端子
1511 イヤホン端子
1512 キーボード
1513 外部メモリスロット
1514 カメラ用レンズ
1515 ライト
8001 筐体
8002 支持台
8003 表示部
8004 スピーカー部
8005 ビデオ入力端子
8101 本体
8102 筐体
8103 表示部
8104 キーボード
8105 外部接続ポート
8106 マウス
8201 本体
8202 表示部
8203 筐体
8204 外部接続ポート
8205 リモコン受信部
8206 受像部
8207 バッテリー
8208 音声入力部
8209 操作キー
8210 接眼部
8301 照明部
8302 傘
8303 可変アーム
8304 支柱
8305 台
8306 電源
8401 本体
8402 筐体
8403 表示部
8404 音声入力部
8405 音声出力部
8406 操作キー
8407 外部接続ポート
8408 アンテナ
Claims (35)
- 基板上に形成された開口部を有する反射層と、
前記基板および前記反射層上にそれぞれ分離形成された透光性を有する断熱層と、
前記断熱層上にそれぞれ形成された光吸収層と、
前記光吸収層上にそれぞれ形成された材料層とを有することを特徴とする蒸着用基板。 - 請求項1において、
前記断熱層の透過率は60%以上であることを特徴とする蒸着用基板。 - 請求項1または請求項2において、
前記反射層の膜厚は、1μm以上2μm以下であり、前記断熱層の膜厚は、10nm以上1μm以下であることを特徴とする蒸着用基板。 - 基板上に形成された開口部を有する反射層および断熱層と、
前記基板および前記断熱層上にそれぞれ分離形成された光吸収層と、
前記光吸収層上にそれぞれ形成された材料層とを有することを特徴とする蒸着用基板。 - 請求項4において、
前記反射層の膜厚は、10nm以上1μm以下であり、前記断熱層の膜厚は、1μm以上2μm以下であることを特徴とする蒸着用基板。 - 請求項1乃至請求項5のいずれか一において、
前記反射層は、光に対する反射率が85%以上であることを特徴とする蒸着用基板。 - 請求項1乃至請求項6のいずれか一において、
前記反射層は、アルミニウム、銀、金、白金、銅、アルミニウムを含む合金、または銀を含む合金のいずれかを含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項7のいずれか一において、
前記断熱層に用いる材料の熱伝導率は、前記反射層および前記光吸収層に用いる材料の熱伝導率よりも小さいことを特徴とする蒸着用基板。 - 請求項1乃至請求項8のいずれか一において、
前記断熱層は、酸化チタン、酸化珪素、窒化酸化珪素、酸化ジルコニウムのいずれかを含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項9のいずれか一において、
前記光吸収層は、光に対する反射率が70%以下であることを特徴とする蒸着用基板。 - 請求項1乃至請求項10のいずれか一において、
前記光吸収層の膜厚は、200nm以上600nm以下であることを特徴とする蒸着用基板。 - 請求項1乃至請求項11のいずれか一において、
前記光吸収層は、窒化チタン、窒化タンタル、その他金属窒化物、チタン、カーボンのいずれかを含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項12のいずれか一において、
前記材料層は有機化合物からなることを特徴とする蒸着用基板。 - 請求項1乃至請求項13のいずれか一において、
前記材料層は、発光性材料またはキャリア輸送性材料の一方または両方を含むことを特徴とする蒸着用基板。 - 基板上に開口部を有する反射層を形成し、
前記基板および前記反射層上に透光性を有する断熱層をそれぞれ分離形成し、
前記断熱層上に光吸収層をそれぞれ形成し、
前記光吸収層上に材料層をそれぞれ形成することを特徴とする蒸着用基板の作製方法。 - 請求項15において、
前記反射層の膜厚は、1μm以上2μm以下であり、前記断熱層の膜厚は、10nm以上1μm以下であり、前記光吸収層の膜厚は、200nm以上600nm以下であることを特徴とする蒸着用基板の作製方法。 - 基板上に反射層を形成し、
前記反射層上に断熱層を形成し、
前記反射層および前記断熱層に開口部を形成し、
前記基板および前記断熱層上に光吸収層をそれぞれ分離形成し、
前記光吸収層上に材料層をそれぞれ形成することを特徴とする蒸着用基板の作製方法。 - 請求項17において、
前記反射層の膜厚は、10nm以上1μm以下であり、前記断熱層の膜厚は、1μm以上2μm以下であり、前記光吸収層の膜厚は、200nm以上600nm以下であることを特徴とする蒸着用基板の作製方法。 - 基板の一方の面に形成された開口部を有する反射層と、
前記基板および前記反射層に接してそれぞれ分離形成された透光性を有する断熱層と、
前記断熱層に接してそれぞれ形成された光吸収層と、
前記光吸収層に接してそれぞれ形成された材料層とを少なくとも有する第1の基板の一方の面と、
第2の基板の被成膜面とを対向させ、かつ近接させた状態で配置し、
前記第1の基板の他方の面側から光を照射し、
前記反射層の開口部と重なる位置にある前記材料層の一部を選択的に加熱し、
前記材料層の一部を前記第2の基板の被成膜面に蒸着させることを特徴とする発光装置の作製方法。 - 基板の一方の面に形成された開口部を有する反射層と、
前記基板および前記反射層に接してそれぞれ分離形成された透光性を有する断熱層と、
前記断熱層に接してそれぞれ形成された光吸収層と、
前記光吸収層に接してそれぞれ形成された材料層とを少なくとも有する第1の基板の一方の面と、
第1の電極が形成された第2の基板の一方の面とを対向させ、かつ近接させた状態で配置し、
前記第1の基板の他方の面側から光を照射し、
前記反射層の開口部と重なる位置にある前記材料層の一部を選択的に加熱し、
前記材料層の一部を前記第1の電極表面に蒸着させることを特徴とする発光装置の作製方法。 - 請求項19または請求項20において、
前記断熱層の透過率は60%以上であることを特徴とする発光装置の作製方法。 - 請求項19乃至請求項21のいずれか一において、
前記反射層の膜厚は、1μm以上2μm以下であり、前記断熱層の膜厚は、10nm以上1μm以下であることを特徴とする発光装置の作製方法。 - 基板の一方の面に形成された開口部を有する反射層および断熱層と、
前記基板および前記断熱層に接してそれぞれ分離形成された光吸収層と、
前記光吸収層に接してそれぞれ形成された材料層とを少なくとも有する第1の基板の一方の面と、
第2の基板の被成膜面とを対向させ、かつ近接させた状態で配置し、
前記第1の基板の他方の面側から光を照射し、
前記反射層の開口部と重なる位置にある前記材料層の一部を選択的に加熱し、
前記材料層の一部を前記第2の基板の被成膜面に蒸着させることを特徴とする発光装置の作製方法。 - 基板の一方の面に形成された開口部を有する反射層および断熱層と、
前記基板および前記断熱層に接してそれぞれ分離形成された光吸収層と、
前記光吸収層に接してそれぞれ形成された材料層とを少なくとも有する第1の基板の一方の面と、
第1の電極が形成された第2の基板の一方の面とを対向させ、かつ近接させた状態で配置し、
前記第1の基板の他方の面側から光を照射し、
前記反射層の開口部と重なる位置にある前記材料層の一部を選択的に加熱し、
前記材料層の一部を前記第1の電極表面に蒸着させることを特徴とする発光装置の作製方法。 - 請求項24において、
前記反射層の膜厚は、10nm以上1μm以下であり、前記断熱層の膜厚は、1μm以上2μm以下であることを特徴とする発光装置の作製方法。 - 請求項19乃至請求項25のいずれか一において、
前記光は、赤外光であることを特徴する発光装置の作製方法。 - 請求項19乃至請求項26のいずれか一において、
前記反射層は、光に対する反射率が85%以上であることを特徴とする発光装置の作製方法。 - 請求項19乃至請求項27のいずれか一において、
前記反射層は、アルミニウム、銀、金、白金、銅、アルミニウムを含む合金、または銀を含む合金のいずれかを含むことを特徴とする発光装置の作製方法。 - 請求項19乃至請求項28のいずれか一において、
前記断熱層に用いる材料の熱伝導率は、前記反射層および前記光吸収層に用いる材料の熱伝導率よりも小さいことを特徴とする発光装置の作製方法。 - 請求項19乃至請求項29のいずれか一において、
前記断熱層は、酸化チタン、酸化珪素、窒化酸化珪素、酸化ジルコニウムのいずれかを含むことを特徴とする発光装置の作製方法。 - 請求項19乃至請求項30のいずれか一において、
前記光吸収層は、光に対する反射率が70%以下であることを特徴とする発光装置の作製方法。 - 請求項19乃至請求項31のいずれか一において、
前記光吸収層の膜厚は、200nm以上600nm以下であることを特徴とする発光装置の作製方法。 - 請求項19乃至請求項32のいずれか一において、
前記光吸収層は、窒化タンタル、チタン、カーボンのいずれかを含むことを特徴とする発光装置の作製方法。 - 請求項19乃至請求項33のいずれか一において、
前記材料層は有機化合物からなることを特徴とする発光装置の作製方法。 - 請求項19乃至請求項34のいずれか一において、
前記材料層は、発光性材料またはキャリア輸送性材料の一方または両方を含むことを特徴とする発光装置の作製方法。
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JP5247410B2 (ja) | 2013-07-24 |
KR20090071397A (ko) | 2009-07-01 |
US9159923B2 (en) | 2015-10-13 |
KR101689519B1 (ko) | 2016-12-26 |
US20090169809A1 (en) | 2009-07-02 |
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