JP2009123693A - 蒸着用基板および発光装置の作製方法 - Google Patents
蒸着用基板および発光装置の作製方法 Download PDFInfo
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- JP2009123693A JP2009123693A JP2008271885A JP2008271885A JP2009123693A JP 2009123693 A JP2009123693 A JP 2009123693A JP 2008271885 A JP2008271885 A JP 2008271885A JP 2008271885 A JP2008271885 A JP 2008271885A JP 2009123693 A JP2009123693 A JP 2009123693A
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Images
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/206—Organic displays, e.g. OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】基板上に形成された開口部を有する反射層と、基板および反射層上に形成された透光性を有する断熱層と、断熱層上に形成された光吸収層と、光吸収層上に形成された材料層とを有する。この様な構造の蒸着用基板を形成することにより、光照射によって反射層の開口部と重なる位置にある材料層の一部を選択的に加熱し、材料層の一部を被成膜基板に精度良く蒸着させることができる。
【選択図】図1
Description
本実施の形態1では、本発明にかかる蒸着用基板および蒸着用基板を用いた成膜方法について説明する。なお、本実施の形態1では、蒸着用基板を用いて発光素子のEL層を形成する場合について説明する。
本実施の形態2では、実施の形態1で説明した蒸着用基板を複数用いて、発光素子のEL層を形成することにより、フルカラー表示が可能な発光装置の作製方法について説明する。
本実施の形態では、本発明に係る発光装置の作製を可能とする成膜装置の例について説明する。本実施の形態に係る成膜装置の断面の模式図を図6、図7に示す。
本実施の形態4では、本発明の蒸着用基板にレーザ光を照射させることにより蒸着を行う成膜装置の例について説明する。
本実施の形態では、本発明を適用して、発光素子および発光装置を作製する方法について説明する。
本実施の形態6では、実施の形態5で説明した発光素子を用いて形成される発光装置について説明する。
本実施の形態では、本発明を適用して作製した発光装置を用いて完成させた様々な電子機器について、図13を用いて説明する。
102 反射層
103 断熱層
104 光吸収層
105 材料層
106 開口部
107 基板
108 電極
109 絶縁物
111 EL層
112 断熱層
113 光吸収層
114 断熱層
401 反射層
402 開口部
411 EL層(R)
412 EL層(G)
413 EL層(B)
414 絶縁物
501 反射層
502 開口部
511 EL層(R)
512 EL層(G)
513 EL層(B)
601 成膜室
602 第1のゲート弁
603 第2のゲート弁
604 蒸着用基板支持機構
605 被成膜基板支持機構
607 蒸着用基板
608 材料層
609 被成膜基板
610 光源
611 チューブ
701 成膜室
702 第1のゲート弁
703 第2のゲート弁
704 蒸着用基板支持機構
705 被成膜基板支持機構
707 蒸着用基板
708 材料層
709 被成膜基板
710 光源
751 成膜室
754 蒸着用基板支持機構
755 被成膜基板支持機構
757 蒸着用基板
758 材料層
759 被成膜基板
760 光源
800 被成膜基板
801 蒸着用基板
803 レーザ発振装置
804 第1の光学系
805 第2の光学系
806 第3の光学系
807 反射ミラー
808 撮像素子
809 基板ステージ
810 反射層
811 断熱層
812 光吸収層
813 材料層
814 開口部
815 材料層
816 制御装置
901 基板
902 第1の電極
903 EL層
904 第2の電極
911 正孔注入層
912 正孔輸送層
913 発光層
914 電子輸送層
915 電子注入層
1001 基板
1004 絶縁層
1013 電極
1014 隔壁
1015 EL層
1016 電極
1021 発光領域
1022 隔壁
1102 データ線
1103 走査線
1104 隔壁
1105 領域
1106 入力端子
1107 入力端子
1108 接続配線
1200 EL層
1201 駆動回路部(ソース側駆動回路)
1202 画素部
1203 駆動回路部(ゲート側駆動回路)
1204 封止基板
1205 シール材
1207 空間
1208 配線
1209 FPC(フレキシブルプリントサーキット)
1210 素子基板
1211 スイッチング用TFT
1212 電流制御用TFT
1213 電極
1214 絶縁物
1215 発光素子
1216 電極
1223 nチャネル型TFT
1224 pチャネル型TFT
1401 本体
1402 筐体
1403 筐体
1404 表示部
1405 スピーカー
1406 マイクロフォン
1407 操作キー
1408 ポインティングデバイス
1409 カメラ用レンズ
1410 外部接続端子
1411 イヤホン端子
1412 キーボード
1413 外部メモリスロット
1414 カメラ用レンズ
1415 ライト
1501 基板
1502 反射層
1503 断熱層
1504 光吸収層
1505 材料層
1506 開口部
1511 基板
1512 反射層
1514 光吸収層
1515 材料層
1516 開口部
8001 筐体
8002 支持台
8003 表示部
8004 スピーカー部
8005 ビデオ入力端子
8101 本体
8102 筐体
8103 表示部
8104 キーボード
8105 外部接続ポート
8106 マウス
8201 本体
8202 表示部
8203 筐体
8204 外部接続ポート
8205 リモコン受信部
8206 受像部
8207 バッテリー
8208 音声入力部
8209 操作キー
8210 接眼部
8301 照明部
8302 傘
8303 可変アーム
8304 支柱
8305 台
8306 電源
8401 本体
8402 筐体
8403 表示部
8404 音声入力部
8405 音声出力部
8406 操作キー
8407 外部接続ポート
8408 アンテナ
Claims (26)
- 基板上に形成された開口部を有する反射層と、
前記基板および前記反射層上に形成された透光性を有する断熱層と、
前記断熱層上に形成された光吸収層と、
前記光吸収層上に形成された材料層とを有することを特徴とする蒸着用基板。 - 請求項1において、
前記反射層は、光に対する反射率が85%以上であることを特徴とする蒸着用基板。 - 請求項1または請求項2において、
前記反射層は、アルミニウム、銀、金、白金、銅、アルミニウムを含む合金、銀を含む合金、または酸化インジウム−酸化スズのいずれかを含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項3のいずれか一において、
前記断熱層の透過率は60%以上であり、かつ前記断熱層に用いる材料の熱伝導率は、前記反射層および前記光吸収層に用いる材料の熱伝導率よりも小さいことを特徴とする蒸着用基板。 - 請求項1乃至請求項4のいずれか一において、
前記断熱層の膜厚は、10nm以上2μm以下であることを特徴とする蒸着用基板。 - 請求項1乃至請求項5のいずれか一において、
前記断熱層は、酸化チタン、酸化珪素、窒化酸化珪素、酸化ジルコニウム、炭化珪素のいずれかを含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項6のいずれか一において、
前記光吸収層は、光に対する反射率が70%以下であることを特徴とする蒸着用基板。 - 請求項1乃至請求項7のいずれか一において、
前記光吸収層の膜厚は、100nm以上600nm以下であることを特徴とする蒸着用基板。 - 請求項1乃至請求項8のいずれか一において、
前記光吸収層は、窒化タンタル、チタン、カーボンのいずれかを含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項9のいずれか一において、
前記光吸収層が前記反射層の開口部と重なる位置に島状に形成されていることを特徴とする蒸着用基板。 - 請求項1乃至請求項10のいずれか一において、
前記材料層は有機化合物を含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項11のいずれか一において、
前記材料層は、発光性材料またはキャリア輸送性材料の一方または両方を含むことを特徴とする蒸着用基板。 - 請求項1乃至請求項12のいずれか一において、
前記材料層は、湿式法により形成されることを特徴とする蒸着用基板。 - 基板の一方の面に形成された開口部を有する反射層と、
前記基板および前記反射層に接して形成された透光性を有する断熱層と、
前記断熱層に接して形成された光吸収層と、
前記光吸収層に接して形成された材料層とを少なくとも有する第1の基板の一方の面と、
第2の基板の被成膜面とを対向させ、かつ近接させた状態で配置し、
前記第1の基板の他方の面側から光を照射し、
前記反射層の開口部と重なる位置にある前記材料層の一部を選択的に加熱し、
前記材料層の一部を前記第2の基板の被成膜面に蒸着させることを特徴とする発光装置の作製方法。 - 基板の一方の面に形成された開口部を有する反射層と、
前記基板および前記反射層に接して形成された透光性を有する断熱層と、
前記断熱層に接して形成された光吸収層と、
前記光吸収層に接して形成された材料層とを少なくとも有する第1の基板の一方の面と、
第1の電極が形成された第2の基板の一方の面とを対向させ、かつ近接させた状態で配置し、
前記第1の基板の他方の面側から光を照射し、
前記反射層の開口部と重なる位置にある前記材料層の一部を選択的に加熱し、
前記材料層の一部を前記第1の電極表面に蒸着させることを特徴とする発光装置の作製方法。 - 請求項14または請求項15において、
前記反射層は、光に対する反射率が85%以上であることを特徴とする発光装置の作製方法。 - 請求項14乃至請求項16のいずれか一において、
前記反射層は、アルミニウム、銀、金、白金、銅、アルミニウムを含む合金、銀を含む合金、または酸化インジウム−酸化スズのいずれかを含むことを特徴とする発光装置の作製方法。 - 請求項14乃至請求項17のいずれか一において、
前記断熱層の透過率は60%以上であり、かつ前記断熱層に用いる材料の熱伝導率は、前記反射層および前記光吸収層に用いる材料の熱伝導率よりも小さいことを特徴とする発光装置の作製方法。 - 請求項14乃至請求項18のいずれか一において、
前記断熱層の膜厚は、10nm以上2μm以下であることを特徴とする発光装置の作製方法。 - 請求項14乃至請求項19のいずれか一において、
前記断熱層は、酸化チタン、酸化珪素、窒化酸化珪素、酸化ジルコニウム、炭化珪素のいずれかを含むことを特徴とする発光装置の作製方法。 - 請求項14乃至請求項20のいずれか一において、
前記光吸収層は、光に対する反射率が70%以下であることを特徴とする発光装置の作製方法。 - 請求項14乃至請求項21のいずれか一において、
前記光吸収層の膜厚は、100nm以上600nm以下であることを特徴とする発光装置の作製方法。 - 請求項14乃至請求項22のいずれか一において、
前記光吸収層は、窒化タンタル、チタン、カーボンのいずれかを含むことを特徴とする発光装置の作製方法。 - 請求項14乃至請求項23のいずれか一において、
前記光吸収層が前記反射層の開口部と重なる位置に島状に形成されていることを特徴とする発光装置の作製方法。 - 請求項14乃至請求項24のいずれか一において、
前記材料層は有機化合物からなることを特徴とする発光装置の作製方法。 - 請求項14乃至請求項25のいずれか一において、
前記材料層は、発光性材料またはキャリア輸送性材料の一方または両方を含むことを特徴とする発光装置の作製方法。
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US8277871B2 (en) | 2012-10-02 |
JP5132516B2 (ja) | 2013-01-30 |
US20090104403A1 (en) | 2009-04-23 |
KR20090041314A (ko) | 2009-04-28 |
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