JP2012515256A - 少なくとも一つの電気伝導性フィルムを基板上へ蒸着させる方法 - Google Patents
少なくとも一つの電気伝導性フィルムを基板上へ蒸着させる方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/101—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by casting or moulding of conductive material
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3468—Applying molten solder
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
− フィルム材料の層であって、当該層はマスク部を前面に有し、当該層とマスク部とは一つの部分であり、当該層の前面が基板上に位置決めされている、フィルム材料の層を選択するステップと、
− 溶解した液滴が前記基板の方へと推進し、蒸着してフィルムを形成するよう、前記層の少なくとも一部を溶解且つ蒸発させるために、少なくとも一回のレーザパルスを前記層の背面へ印加するステップと、を含み、前記マスク部にある少なくとも一つの溝が、前記溶解液滴の飛散を制限する。
− 前面11にマスク部40を有する層10であって、当該層10と当該マスク部とが1つの部分である、層10を使用するステップと、
− 当該層10の前面11を基板30の上に位置決めするステップと、
− 前記層10の少なくとも一部分を溶解させ、及び/又は蒸発させ、及び/又は気化させるステップと、
− 基板30の方へと膨張する衝撃波150を発生させるステップと、
− 内部圧力波155を層10へ向けて形成するステップと、
− 溶解液滴110を前記基板30の方へと推進させるステップと、
− 前記溶解液滴110を前記基板30上で蒸着させ、フィルム20を形成するステップであって、マスク部40の少なくとも一つの溝45が前記溶解液滴110の飛散を制限するステップと、である。
11 層の前面
12 層の背面
20 電気伝導性があるフィルム
30 基板
40 マスク部
45 溝
46 溝幅
100 溶解槽
110 溶解液滴
120 レーザパルス
125 レーザ光線の直径
130 切削縁
131 切削角
140 機械的なツール
150 衝撃波
155 圧力波
Claims (14)
- 少なくとも一つの電気伝導性があるフィルムを基板上に蒸着する方法であって、
− 前記フィルムの材料の層であって、マスク部を当該層の前面に有し、当該層と前記マスク部とが一つの部分である、フィルムの材料の層を選択するステップと、
− 前記層の前面を前記基板上に位置決めするステップと、
− 溶解液滴が前記基板の方へと推進され、当該基板上に蒸着され、前記フィルムを形成し、前記マスク部にある少なくとも一つの溝が前記溶解液滴の飛散を制限するよう前記層の少なくとも一部を溶解し蒸発させるために、少なくとも1回のレーザパルスを前記層の背面上へ印加するステップと、
を含む、方法。 - 前記層の少なくとも一部を溶解し、蒸発させるステップと、
衝撃波を発生させるステップと、
前記基板へと向かって膨張し、前記層に向かう内部圧力波を形成するステップと、
前記溶解液滴を前記基板の方へと推進させるステップと、
を更に含むことを特徴とする、請求項1に記載の方法。 - 前記衝撃波は、前記フィルム材料が蒸発した層により形成されることを特徴とする、請求項1又は2に記載の方法。
- 複数のレーザパルスが順次隣接して印加され、当該複数のレーザパルスが前記層に沿って前記溝の上を移動することを特徴とする、請求項1乃至3の何れか一項に記載の方法。
- 前記レーザパルスを前記層に印加するステップが切削縁を形成し、
当該切削縁は、前記層の背面に対して30°<θ<70°の切削角θを有することを特徴とする、請求項1乃至4の何れか一項に記載の方法。 - 前記マスク部及び/又は前記溝が、機械的なツールで前記層の前面に作られることを特徴とする、請求項1乃至5の何れか一項に記載の方法。
- 前記マスク部及び/又は前記溝が、矩形断面を有することを特徴とする、請求項1乃至6の何れか一項に記載の方法。
- 前記層の背面でのレーザビーム直径及び/又はレーザ出力が、前記基板への直接照射を回避する態様に調整されることを特徴とする、請求項1乃至7の何れか一項に記載の方法。
- 前記基板がOLED用の基板であることを特徴とする、請求項1乃至8の何れか一項に記載の方法。
- 前記層がマスク部を有し、当該層が請求項1乃至8の何れか一項による方法のうちの少なくとも一つに従って使用可能であることを特徴とする、フィルム材料の層。
- 少なくとも一つの電気伝導性のフィルムを基板上に蒸着するためのシステムであって、レーザとフィルム材料の層とを有し、請求項1乃至8の何れか一項によって働く、システム。
- 前記レーザがパルス化されたNd:YVO4レーザであることを特徴とする、請求項11に記載のシステム。
- 前記レーザが、10 Wと100 Wとの間の出力、好ましくは20 Wと60 Wとの間の出力を有することを特徴とする、請求項11又は12に記載のシステム。
- 前記レーザが20 KHzと200 KHzとの間の、好ましくは110 KHzと170 KHzとの間のレーザパルス繰返し率を有し、当該レーザが10μmと100μmとの間の、好ましくは20μmと50μmとの間のレーザビーム直径を有することを特徴とする、請求項11乃至13の何れか一項に記載のシステム。
Applications Claiming Priority (3)
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EP09150520 | 2009-01-14 | ||
EP09150520.6 | 2009-01-14 | ||
PCT/IB2010/050083 WO2010082151A1 (en) | 2009-01-14 | 2010-01-11 | A method for deposition of at least one electrically conducting film on a substrate |
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JP2012515256A true JP2012515256A (ja) | 2012-07-05 |
JP5731400B2 JP5731400B2 (ja) | 2015-06-10 |
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US (1) | US8809192B2 (ja) |
EP (1) | EP2387803B1 (ja) |
JP (1) | JP5731400B2 (ja) |
KR (1) | KR101639786B1 (ja) |
CN (1) | CN102282693B (ja) |
TW (1) | TWI538277B (ja) |
WO (1) | WO2010082151A1 (ja) |
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DE102012219063A1 (de) | 2012-10-19 | 2014-04-24 | Robert Bosch Gmbh | Verfahren und Vorrichtung zur Erzeugung einer Metallschicht auf einem Substrat |
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US20110318924A1 (en) | 2011-12-29 |
EP2387803A1 (en) | 2011-11-23 |
KR20110114666A (ko) | 2011-10-19 |
CN102282693A (zh) | 2011-12-14 |
WO2010082151A1 (en) | 2010-07-22 |
KR101639786B1 (ko) | 2016-07-15 |
CN102282693B (zh) | 2013-10-23 |
TW201036228A (en) | 2010-10-01 |
JP5731400B2 (ja) | 2015-06-10 |
US8809192B2 (en) | 2014-08-19 |
TWI538277B (zh) | 2016-06-11 |
EP2387803B1 (en) | 2016-07-13 |
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