JP2007294863A - 回路装置 - Google Patents
回路装置 Download PDFInfo
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- JP2007294863A JP2007294863A JP2007021274A JP2007021274A JP2007294863A JP 2007294863 A JP2007294863 A JP 2007294863A JP 2007021274 A JP2007021274 A JP 2007021274A JP 2007021274 A JP2007021274 A JP 2007021274A JP 2007294863 A JP2007294863 A JP 2007294863A
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Abstract
【解決手段】この回路装置は、金属基板20と、金属基板20上に搭載され、この金属基板20と電気的に接続された複数の回路素子10a,10bを備える。金属基板20は、熱伝導性に優れた銅板からなり、樹脂中に熱伝導率を高くするためのフィラーが添加された絶縁膜4によって複数の領域(たとえば、回路素子10a,10bの搭載領域である銅板1a,1bやボンディングワイヤ11a,11bの接続領域である銅板1c,1d,1e)に区画されている。また、回路素子10a,10bは、これら回路素子の金属基板側の面にそれぞれ独立した動作電位を有し、それぞれ別々の銅板1a,1b上に設けられている。
【選択図】図2
Description
図1および図2に基づいて、第1の実施形態の回路装置について説明する。
第2の実施形態に係る回路装置は、第1の実施形態で説明した回路装置100のように金属基板上に回路素子が搭載されているだけでなく、金属基板とは反対側の配線層の上にも回路素子が搭載されている。このように構成することで、異なる機能を有する複数の回路素子を効率的に配置することができる。以下に、このような回路装置の一例として、小型のファンモータを駆動する回路装置について説明する。
パワー部160が備えるパワーデバイスは、駆動しようとする機器の負荷が大きい場合にジュール熱による発熱が大きくなる。そのため、放熱性の高い基板への実装技術が必要となる。
微細CMOSプロセスにより製造された部品を備える制御部130を高密度に実装するためには、多層・微細配線基板への実装技術が必要となる。
上述の各実施の形態に係る回路装置は、各回路素子が搭載される領域が絶縁膜によって区画されている。そのため、ある回路素子と、その回路素子が接合されている金属基板の一部とで一つの閉じた系が構成されていると考えられる。図13は、回路素子とそれが搭載される金属基板の一部とで構成された系を説明するための模式図である。
したがって、この値よりも大きな体積の銅板に前述の回路素子を搭載すればよいことがわかる。
1a〜1g 区画された銅板
3 溝(凹部)
4 絶縁膜(伝熱促進用のフィラーが添加された樹脂)
5,7 絶縁膜
6,8 導電膜(配線パターン)
9a,9b ソルダーレジスト層
10a,10b 回路素子
11a,11b ボンディングワイヤ
12 封止樹脂層
13 外部接続端子(はんだボール)
20 金属基板
30 配線層
Claims (8)
- 絶縁膜によって複数の領域に区画された金属基板と、
前記金属基板の一方の面上に搭載され、この金属基板と電気的に接続された第1の回路素子および第2の回路素子と、
を備え、
前記第1の回路素子は、前記金属基板との接続部分に第1の電圧が印加され、
前記第2の回路素子は、前記金属基板との接続部分に、前記第1の電圧とは異なる第2の電圧が印加され、
前記第1の回路素子および前記第2の回路素子は、それぞれ異なる前記領域に設けられていることを特徴とした回路装置。 - 前記第1の回路素子および前記第2の回路素子は、前記金属基板にそれぞれ直接搭載されていることを特徴とした請求項1に記載の回路装置。
- 前記第1の回路素子および前記第2の回路素子が搭載された前記領域は、それぞれの回路素子の外縁を越えた位置に外縁を有していることを特徴とした請求項1または2に記載の回路装置。
- 複数の前記領域は、ワイヤ接続用電極として機能する領域を含むことを特徴とした請求項1〜3のいずれか一項に記載の回路装置。
- 前記絶縁膜は、伝熱促進用のフィラーが添加された樹脂膜からなることを特徴とした請求項1〜4のいずれか一項に記載の回路装置。
- 前記金属基板の他方の面上に設けられ、区画された前記領域同士を電気的に接続する配線層をさらに備えることを特徴とした請求項1〜5のいずれか一項に記載の回路装置。
- 前記第1の回路素子および前記第2の回路素子の少なくともいずれかよりも発熱量の小さい第3の回路素子をさらに備え、
前記第3の回路素子は、前記配線層の両面のうち前記金属基板が配置されている側と反対側の面上に搭載されていることを特徴とした請求項6に記載の回路装置。 - 前記金属基板のうち前記第1の回路素子が設けられている前記領域の体積V[m3]は、
前記第1の回路素子に通電されている間に生じる電力損失により発生する熱量をQ[J]、前記領域の密度をρ[kg/m3]、前記領域の比熱をC[J/kg・K]、前記第1の回路素子の発熱によって系に不具合が発生しない温度変化の上限値をΔTth[K]とした場合、
V>Q/(ρ・C・ΔTth)
を満たすことを特徴とした請求項1〜7のいずれか一項に記載の回路装置。
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KR20110114666A (ko) * | 2009-01-14 | 2011-10-19 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 기판 상에 적어도 하나의 전기 전도성 막을 퇴적하는 방법 |
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