IL247946B - Pulsed-mode direct-write laser metallization - Google Patents
Pulsed-mode direct-write laser metallizationInfo
- Publication number
- IL247946B IL247946B IL247946A IL24794616A IL247946B IL 247946 B IL247946 B IL 247946B IL 247946 A IL247946 A IL 247946A IL 24794616 A IL24794616 A IL 24794616A IL 247946 B IL247946 B IL 247946B
- Authority
- IL
- Israel
- Prior art keywords
- substrate
- pattern
- matrix
- sintering
- energy beam
- Prior art date
Links
- 238000001465 metallisation Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 74
- 239000011159 matrix material Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 34
- 238000005245 sintering Methods 0.000 claims description 32
- 150000002894 organic compounds Chemical class 0.000 claims description 21
- 239000002105 nanoparticle Substances 0.000 claims description 20
- 238000001704 evaporation Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000002123 temporal effect Effects 0.000 claims description 7
- 238000002679 ablation Methods 0.000 claims description 6
- 230000032798 delamination Effects 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 3
- 230000004927 fusion Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000000976 ink Substances 0.000 description 8
- 238000000149 argon plasma sintering Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000110 selective laser sintering Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/705—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thick-film circuits or parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Powder Metallurgy (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Description
PULSED-MODE DIRECT-WRITE LASER METALLIZATION FIELD OF THE INVENTION The present invention relates generally to production of printed wiring on circuit substrates, and particularly to methods and systems for direct writing of metal features.
BACKGROUND Direct laser sintering of metal inks is a known technique for metallization of printed wiring. For example, U.S. Patent Application Publication 2008/02864describes a method of forming a conductive film based on depositing a non-conductive film on a surface of a substrate. The film contains a plurality of copper nanoparticles, and exposing at least a portion of the film to light makes the exposed portion conductive by photosintering or fusing the copper nanoparticles.Kumpulainen et al. describe direct laser sintering techniques in "Low Temperature Nanoparticle Sintering with Continuous Wave and Pulse Lasers," Optics & Laser Technology 43(2011), pages 570-576. The authors relate to "printable electronics," in which nanoparticle inks, printed on the surface of a substrate, contain additives, such as dispersing agents and carrier fluids, that provide good printing properties by changing the viscosity and separating the nanoparticles of the ink. In the sintering process, ink particles are heated to a certain, ink- specific temperature, and the carrier fluid and dispersing agents are evaporated from the ink. Additional heating after evaporation causes the nanoparticles to start to agglomerate. Laser sintering is said to enable short sintering times and selective sintering, making it possible for printed structures to contain fragile active components produced with other technologies. The paper describes tests done with two different types of laser: pulsed and continuous wave.After the priority date of the present patent application, Theodorakos et al. described further laser sintering techniques in "Selective Laser Sintering of Ag Nanoparticles Ink for Applications in Flexible Electronics," Applied Surface Science 336(2015), pages 157-162. The authors investigate the potential of three different laser sources: continuous wave (CW) or pulsed nanosecond and picosecond lasers, operating at 532 and 10nm, as efficient tools for selective laser sintering of Ag nanoparticle ink layers on flexible substrates. Theoretical simulations indicate that picosecond laser pulses restrict the heat-affected zone to a few micrometers only around the irradiated regions of the ink layer. These predictions were confirmed experimentally.
SUMMARY Embodiments of the present invention provide enhanced methods and systems for laser-based direct writing of traces onto a substrate.There is therefore provided, in accordance with an embodiment of the invention, a method for manufacturing, which includes coating a substrate with a matrix containing a material to be patterned on the substrate, and fixing a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. The matrix remaining on the substrate outside the fixed pattern is removed, and after removing the matrix, the material in the pattern is sintered.In some embodiments, the material to be patterned includes nanoparticles. In a disclosed embodiment, the material in the nanoparticles is electrically conductive, and the pulsed energy beam includes pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.Typically, directing the pulsed energy beam includes directing a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.In the disclosed embodiments, the pulsed energy beam has a pulse repetition rate of at least 1 MHz, and possibly at least 10 MHz.
Typically, the matrix includes an organic compound in addition to the material to be patterned, and directing the pulsed energy beam includes directing a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause evaporation of the organic compound from the matrix without fully sintering the material in the pattern. The fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.In some embodiments, sintering the material includes applying a bulk sintering process to the pattern fixed on the substrate. Alternatively, sintering the material includes directing further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.In a disclosed embodiment, coating the substrate includes drying the matrix on the substrate before irradiating the coated substrate. Additionally or alternatively, removing the matrix includes applying a solvent to remove the matrix remaining on the substrate outside the fixed pattern.There is also provided, in accordance with an embodiment of the invention, a method for manufacturing, which includes coating a substrate with a matrix containing a material to be patterned on the substrate, and directing a pulsed energy beam including pulses having a ramped temporal profile to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.In the disclosed embodiments, the matrix includes an organic compound in addition to the material that is to be fixed to the substrate, and the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound. In some embodiments, the material includes nanoparticles, and sintering the material causes fusion of the nanoparticles at the point.In a disclosed embodiment, the pulses have a duration no greater than 20 ns.In some embodiments, directing the pulsed energy beam includes creating a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate. The points in the sequence may be mutually non-overlapping. Typically, the method includes, after creating the pattern, removing the matrix remaining on the substrate outside a locus of the pattern.There is additionally provided, in accordance with an embodiment of the invention, a system for manufacturing, including a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate. A writing machine is configured to fix a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. A matrix removal machine is configured to remove the matrix remaining on the substrate outside the fixed pattern. A sintering machine is configured to sinter the material in the pattern after removal of the matrix.There is further provided, in accordance with an embodiment of the invention, a system for manufacturing, including a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate. A writing machine is configured to direct a pulsed energy beam including pulses having a ramped temporal profile to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.The present invention will be more fully understood from the following detailed description of the embodiments thereof, taken together with the drawings in which: BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is schematic, pictorial illustration showing a system for laser-based direct writing and stages in the operation of the system, in accordance with an embodiment of the present invention;Figs. 2A-2E are schematic top views of a substrate on which a pattern of traces is written, illustrated in successive stages of a process of forming the pattern, in accordance with an embodiment of the present invention;Figs. 3A and 3B are schematic sectional views of a substrate on which a trace is written, illustrated in successive stages of a process of forming the trace, in accordance with an embodiment of the present invention;Figs. 4A-4D are schematic sectional views of a substrate on which a trace is written, illustrated at successive times during fixation of the trace, in accordance with an embodiment of the invention;Fig. 4E is a schematic sectional view of the substrate and trace of Figs. 4A-4D, following annealing of the trace, in accordance with an embodiment of the invention;Fig. 5 is a plot illustrating a dependence of pulse energy thresholds for fixation of and damage to a trace written on a substrate, in accordance with an embodiment of the invention;Fig. 6A is a schematic top view of a substrate on which spots have been written at an array of points by a pulsed beam with varying pulse parameters, in accordance with an embodiment of the invention; andFig. 6B is a schematic top view of a pattern formed on a substrate by applying a pulsed beam to a sequence of points, in accordance with an embodiment of the invention.
Claims (38)
1./ Claims 1. A method for manufacturing, comprising: coating a substrate with a matrix containing a material to be patterned on the substrate; fixing a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern; removing the matrix remaining on the substrate outside the fixed pattern; and after removing the matrix, sintering the material in the pattern.
2. The method according to claim 1, wherein the material to be patterned comprises nanoparticles.
3. The method according to claim 2, wherein the material in the nanoparticles is electrically conductive, and wherein the pulsed energy beam comprises pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.
4. The method according to claim 1, wherein directing the pulsed energy beam comprises directing a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.
5. The method according to claim 1, wherein the pulsed energy beam has a pulse repetition rate of at least 1 MHz.
6. The method according to claim 5, wherein the pulse repetition rate is at least 10 MHz.
7. The method according to claim 1, wherein the matrix comprises an organic compound in addition to the material to be patterned, and wherein directing the pulsed energy beam comprises directing a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause 247946/ evaporation of the organic compound from the matrix without fully sintering the material in the pattern.
8. The method according to claim 7, wherein the fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.
9. The method according to claim 1, wherein sintering the material comprises applying a bulk sintering process to the pattern fixed on the substrate.
10. The method according to claim 1, wherein sintering the material comprises directing further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.
11. The method according to claim 1, wherein coating the substrate comprises drying the matrix on the substrate before irradiating the coated substrate.
12. The method according to claim 1, wherein removing the matrix comprises applying a solvent to remove the matrix remaining on the substrate outside the fixed pattern.
13. A method for manufacturing, comprising: coating a substrate with a matrix containing a material to be patterned on the substrate; and directing a pulsed energy beam comprising pulses having a ramped temporal profile, in which an instantaneous power of each pulse increases gradually over a duration of the pulse, to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.
14. The method according to claim 13, wherein the matrix comprises an organic compound in addition to the material that is to be fixed to the substrate, and wherein the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the 247946/ matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound.
15. The method according to claim 13, wherein the material comprises nanoparticles, and wherein sintering the material causes fusion of the nanoparticles at the point.
16. The method according to claim 13, wherein the pulses have a duration no greater than ns.
17. The method according to claim 13, wherein directing the pulsed energy beam comprises creating a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate.
18. The method according to claim 17, wherein the points in the sequence are mutually non-overlapping.
19. The method according to claim 17, and comprising, after creating the pattern, removing the matrix remaining on the substrate outside a locus of the pattern.
20. A system for manufacturing, comprising: a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate; a writing machine, which is configured to fix a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern; a matrix removal machine, which is configured to remove the matrix remaining on the substrate outside the fixed pattern; and a sintering machine, which is configured to sinter the material in the pattern after removal of the matrix.
21. The system according to claim 20, wherein the material to be patterned comprises 247946/ nanoparticles.
22. The system according to claim 21, wherein the material in the nanoparticles is electrically conductive, and wherein the pulsed energy beam comprises pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.
23. The system according to claim 20, wherein the writing machine is configured to direct a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.
24. The system according to claim 20, wherein the pulsed energy beam has a pulse repetition rate of at least 1 MHz.
25. The system according to claim 24, wherein the pulse repetition rate is at least 10 MHz.
26. The system according to claim 20, wherein the matrix comprises an organic compound in addition to the material to be patterned, and wherein the writing machine is configured to direct a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause evaporation of the organic compound from the matrix without fully sintering the material in the pattern.
27. The system according to claim 26, wherein the fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.
28. The system according to claim 20, wherein the sintering machine is configured to apply a bulk sintering process to the pattern fixed on the substrate.
29. The system according to claim 20, wherein the sintering machine is configured to apply 247946/ further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.
30. The system according to claim 20, and comprising a drying machine, which is configured to dry the matrix on the substrate before irradiating the coated substrate.
31. The system according to claim 20, wherein the matrix removal machine is configured to apply a solvent to remove the matrix remaining on the substrate outside the fixed pattern.
32. A system for manufacturing, comprising: a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate; and a writing machine, which is configured to direct a pulsed energy beam comprising pulses having a ramped temporal profile, in which an instantaneous power of each pulse increases gradually over a duration of the pulse, to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.
33. The system according to claim 32, wherein the matrix comprises an organic compound in addition to the material that is to be fixed to the substrate, and wherein the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound.
34. The system according to claim 32, wherein the material comprises nanoparticles, and wherein sintering the material causes fusion of the nanoparticles at the point.
35. The system according to claim 32, wherein the pulses have a duration no greater than ns.
36. The system according to claim 32, wherein the writing machine is configured to create a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate. 247946/
37. The system according to claim 36, wherein the points in the sequence are mutually non-overlapping.
38. The system according to claim 36, and comprising a matrix removal machine, which is configured to remove the matrix remaining on the substrate outside a locus of the pattern.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461977766P | 2014-04-10 | 2014-04-10 | |
| PCT/IB2015/052476 WO2015155662A1 (en) | 2014-04-10 | 2015-04-05 | Pulsed-mode direct-write laser metallization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL247946A0 IL247946A0 (en) | 2016-11-30 |
| IL247946B true IL247946B (en) | 2022-08-01 |
Family
ID=54287371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL247946A IL247946B (en) | 2014-04-10 | 2015-04-05 | Pulsed-mode direct-write laser metallization |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP3140853A4 (en) |
| JP (1) | JP6635313B2 (en) |
| KR (1) | KR102345450B1 (en) |
| CN (1) | CN106133891B (en) |
| IL (1) | IL247946B (en) |
| TW (1) | TWI661752B (en) |
| WO (1) | WO2015155662A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6600351B2 (en) | 2014-08-07 | 2019-10-30 | オルボテック リミテッド | LIFT printing system |
| EP3207772B1 (en) | 2014-10-19 | 2024-04-17 | Orbotech Ltd. | Lift printing of conductive traces onto a semiconductor substrate |
| EP3247816A4 (en) | 2015-01-19 | 2018-01-24 | Orbotech Ltd. | Printing of three-dimensional metal structures with a sacrificial support |
| EP3322835A4 (en) | 2015-07-09 | 2019-02-27 | Orbotech Ltd. | Control of lift ejection angle |
| WO2017085712A1 (en) | 2015-11-22 | 2017-05-26 | Orbotech Ltd | Control of surface properties of printed three-dimensional structures |
| TW201901887A (en) | 2017-05-24 | 2019-01-01 | 以色列商奧寶科技股份有限公司 | Electrical interconnection circuit components on the substrate without prior patterning |
| KR102040530B1 (en) * | 2018-04-25 | 2019-11-05 | 성균관대학교산학협력단 | Method of forming redistribution layer using photo―sintering |
| ES2966467T3 (en) * | 2018-05-08 | 2024-04-22 | Seco Tools Ab | A method of manufacturing a sintered body |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100035375A1 (en) * | 2003-07-16 | 2010-02-11 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
| US20100276405A1 (en) * | 2008-03-31 | 2010-11-04 | Electro Scientific Industries, Inc. | Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290796A (en) * | 1985-06-19 | 1986-12-20 | 沖電気工業株式会社 | Manufacture of thick film hybrid integrated circuit board |
| JPS63209193A (en) * | 1987-02-25 | 1988-08-30 | 松下電器産業株式会社 | Method of forming conductor pattern |
| JPH11307914A (en) * | 1998-04-21 | 1999-11-05 | Matsushita Electric Ind Co Ltd | Pattern forming method of thick film wiring board |
| US6921626B2 (en) * | 2003-03-27 | 2005-07-26 | Kodak Polychrome Graphics Llc | Nanopastes as patterning compositions for electronic parts |
| US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
| JP2006038999A (en) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | Method for forming conductive circuit by using laser irradiation, and conductive circuit |
| TWI324423B (en) * | 2005-11-01 | 2010-05-01 | Cymer Inc | Laser system |
| US20070105395A1 (en) | 2005-11-04 | 2007-05-10 | Edward Kinzel | Laser functionalization and patterning of thick-film inks |
| US8404160B2 (en) | 2007-05-18 | 2013-03-26 | Applied Nanotech Holdings, Inc. | Metallic ink |
| US10231344B2 (en) | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
| US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
| JP2009290112A (en) * | 2008-05-30 | 2009-12-10 | Fujifilm Corp | Conductive inorganic film, method for manufacturing thereof, wiring board, and semiconductor device |
| US8422197B2 (en) * | 2009-07-15 | 2013-04-16 | Applied Nanotech Holdings, Inc. | Applying optical energy to nanoparticles to produce a specified nanostructure |
| KR101114256B1 (en) * | 2010-07-14 | 2012-03-05 | 한국과학기술원 | Method of fabricating pattern |
| TW201339279A (en) * | 2011-11-24 | 2013-10-01 | Showa Denko Kk | Conductive-pattern formation method and composition for forming conductive pattern via light exposure or microwave heating |
-
2015
- 2015-04-05 KR KR1020167026671A patent/KR102345450B1/en active IP Right Grant
- 2015-04-05 IL IL247946A patent/IL247946B/en unknown
- 2015-04-05 EP EP15776752.6A patent/EP3140853A4/en active Pending
- 2015-04-05 JP JP2016552929A patent/JP6635313B2/en active Active
- 2015-04-05 CN CN201580015581.9A patent/CN106133891B/en active Active
- 2015-04-05 WO PCT/IB2015/052476 patent/WO2015155662A1/en active Application Filing
- 2015-04-09 TW TW104111474A patent/TWI661752B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100035375A1 (en) * | 2003-07-16 | 2010-02-11 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
| US20100276405A1 (en) * | 2008-03-31 | 2010-11-04 | Electro Scientific Industries, Inc. | Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102345450B1 (en) | 2021-12-29 |
| KR20160144985A (en) | 2016-12-19 |
| JP2017513040A (en) | 2017-05-25 |
| TWI661752B (en) | 2019-06-01 |
| WO2015155662A1 (en) | 2015-10-15 |
| IL247946A0 (en) | 2016-11-30 |
| EP3140853A1 (en) | 2017-03-15 |
| EP3140853A4 (en) | 2018-01-17 |
| CN106133891B (en) | 2020-03-03 |
| JP6635313B2 (en) | 2020-01-22 |
| CN106133891A (en) | 2016-11-16 |
| TW201543978A (en) | 2015-11-16 |
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