IL247946B - Pulsed-mode direct-write laser metallization - Google Patents

Pulsed-mode direct-write laser metallization

Info

Publication number
IL247946B
IL247946B IL247946A IL24794616A IL247946B IL 247946 B IL247946 B IL 247946B IL 247946 A IL247946 A IL 247946A IL 24794616 A IL24794616 A IL 24794616A IL 247946 B IL247946 B IL 247946B
Authority
IL
Israel
Prior art keywords
substrate
pattern
matrix
sintering
energy beam
Prior art date
Application number
IL247946A
Other languages
Hebrew (he)
Other versions
IL247946A0 (en
Original Assignee
Orbotech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orbotech Ltd filed Critical Orbotech Ltd
Publication of IL247946A0 publication Critical patent/IL247946A0/en
Publication of IL247946B publication Critical patent/IL247946B/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Powder Metallurgy (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Description

PULSED-MODE DIRECT-WRITE LASER METALLIZATION FIELD OF THE INVENTION The present invention relates generally to production of printed wiring on circuit substrates, and particularly to methods and systems for direct writing of metal features.
BACKGROUND Direct laser sintering of metal inks is a known technique for metallization of printed wiring. For example, U.S. Patent Application Publication 2008/02864describes a method of forming a conductive film based on depositing a non-conductive film on a surface of a substrate. The film contains a plurality of copper nanoparticles, and exposing at least a portion of the film to light makes the exposed portion conductive by photosintering or fusing the copper nanoparticles.Kumpulainen et al. describe direct laser sintering techniques in "Low Temperature Nanoparticle Sintering with Continuous Wave and Pulse Lasers," Optics & Laser Technology 43(2011), pages 570-576. The authors relate to "printable electronics," in which nanoparticle inks, printed on the surface of a substrate, contain additives, such as dispersing agents and carrier fluids, that provide good printing properties by changing the viscosity and separating the nanoparticles of the ink. In the sintering process, ink particles are heated to a certain, ink- specific temperature, and the carrier fluid and dispersing agents are evaporated from the ink. Additional heating after evaporation causes the nanoparticles to start to agglomerate. Laser sintering is said to enable short sintering times and selective sintering, making it possible for printed structures to contain fragile active components produced with other technologies. The paper describes tests done with two different types of laser: pulsed and continuous wave.After the priority date of the present patent application, Theodorakos et al. described further laser sintering techniques in "Selective Laser Sintering of Ag Nanoparticles Ink for Applications in Flexible Electronics," Applied Surface Science 336(2015), pages 157-162. The authors investigate the potential of three different laser sources: continuous wave (CW) or pulsed nanosecond and picosecond lasers, operating at 532 and 10nm, as efficient tools for selective laser sintering of Ag nanoparticle ink layers on flexible substrates. Theoretical simulations indicate that picosecond laser pulses restrict the heat-affected zone to a few micrometers only around the irradiated regions of the ink layer. These predictions were confirmed experimentally.
SUMMARY Embodiments of the present invention provide enhanced methods and systems for laser-based direct writing of traces onto a substrate.There is therefore provided, in accordance with an embodiment of the invention, a method for manufacturing, which includes coating a substrate with a matrix containing a material to be patterned on the substrate, and fixing a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. The matrix remaining on the substrate outside the fixed pattern is removed, and after removing the matrix, the material in the pattern is sintered.In some embodiments, the material to be patterned includes nanoparticles. In a disclosed embodiment, the material in the nanoparticles is electrically conductive, and the pulsed energy beam includes pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.Typically, directing the pulsed energy beam includes directing a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.In the disclosed embodiments, the pulsed energy beam has a pulse repetition rate of at least 1 MHz, and possibly at least 10 MHz.
Typically, the matrix includes an organic compound in addition to the material to be patterned, and directing the pulsed energy beam includes directing a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause evaporation of the organic compound from the matrix without fully sintering the material in the pattern. The fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.In some embodiments, sintering the material includes applying a bulk sintering process to the pattern fixed on the substrate. Alternatively, sintering the material includes directing further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.In a disclosed embodiment, coating the substrate includes drying the matrix on the substrate before irradiating the coated substrate. Additionally or alternatively, removing the matrix includes applying a solvent to remove the matrix remaining on the substrate outside the fixed pattern.There is also provided, in accordance with an embodiment of the invention, a method for manufacturing, which includes coating a substrate with a matrix containing a material to be patterned on the substrate, and directing a pulsed energy beam including pulses having a ramped temporal profile to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.In the disclosed embodiments, the matrix includes an organic compound in addition to the material that is to be fixed to the substrate, and the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound. In some embodiments, the material includes nanoparticles, and sintering the material causes fusion of the nanoparticles at the point.In a disclosed embodiment, the pulses have a duration no greater than 20 ns.In some embodiments, directing the pulsed energy beam includes creating a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate. The points in the sequence may be mutually non-overlapping. Typically, the method includes, after creating the pattern, removing the matrix remaining on the substrate outside a locus of the pattern.There is additionally provided, in accordance with an embodiment of the invention, a system for manufacturing, including a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate. A writing machine is configured to fix a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. A matrix removal machine is configured to remove the matrix remaining on the substrate outside the fixed pattern. A sintering machine is configured to sinter the material in the pattern after removal of the matrix.There is further provided, in accordance with an embodiment of the invention, a system for manufacturing, including a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate. A writing machine is configured to direct a pulsed energy beam including pulses having a ramped temporal profile to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.The present invention will be more fully understood from the following detailed description of the embodiments thereof, taken together with the drawings in which: BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is schematic, pictorial illustration showing a system for laser-based direct writing and stages in the operation of the system, in accordance with an embodiment of the present invention;Figs. 2A-2E are schematic top views of a substrate on which a pattern of traces is written, illustrated in successive stages of a process of forming the pattern, in accordance with an embodiment of the present invention;Figs. 3A and 3B are schematic sectional views of a substrate on which a trace is written, illustrated in successive stages of a process of forming the trace, in accordance with an embodiment of the present invention;Figs. 4A-4D are schematic sectional views of a substrate on which a trace is written, illustrated at successive times during fixation of the trace, in accordance with an embodiment of the invention;Fig. 4E is a schematic sectional view of the substrate and trace of Figs. 4A-4D, following annealing of the trace, in accordance with an embodiment of the invention;Fig. 5 is a plot illustrating a dependence of pulse energy thresholds for fixation of and damage to a trace written on a substrate, in accordance with an embodiment of the invention;Fig. 6A is a schematic top view of a substrate on which spots have been written at an array of points by a pulsed beam with varying pulse parameters, in accordance with an embodiment of the invention; andFig. 6B is a schematic top view of a pattern formed on a substrate by applying a pulsed beam to a sequence of points, in accordance with an embodiment of the invention.

Claims (38)

1./ Claims 1. A method for manufacturing, comprising: coating a substrate with a matrix containing a material to be patterned on the substrate; fixing a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern; removing the matrix remaining on the substrate outside the fixed pattern; and after removing the matrix, sintering the material in the pattern.
2. The method according to claim 1, wherein the material to be patterned comprises nanoparticles.
3. The method according to claim 2, wherein the material in the nanoparticles is electrically conductive, and wherein the pulsed energy beam comprises pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.
4. The method according to claim 1, wherein directing the pulsed energy beam comprises directing a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.
5. The method according to claim 1, wherein the pulsed energy beam has a pulse repetition rate of at least 1 MHz.
6. The method according to claim 5, wherein the pulse repetition rate is at least 10 MHz.
7. The method according to claim 1, wherein the matrix comprises an organic compound in addition to the material to be patterned, and wherein directing the pulsed energy beam comprises directing a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause 247946/ evaporation of the organic compound from the matrix without fully sintering the material in the pattern.
8. The method according to claim 7, wherein the fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.
9. The method according to claim 1, wherein sintering the material comprises applying a bulk sintering process to the pattern fixed on the substrate.
10. The method according to claim 1, wherein sintering the material comprises directing further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.
11. The method according to claim 1, wherein coating the substrate comprises drying the matrix on the substrate before irradiating the coated substrate.
12. The method according to claim 1, wherein removing the matrix comprises applying a solvent to remove the matrix remaining on the substrate outside the fixed pattern.
13. A method for manufacturing, comprising: coating a substrate with a matrix containing a material to be patterned on the substrate; and directing a pulsed energy beam comprising pulses having a ramped temporal profile, in which an instantaneous power of each pulse increases gradually over a duration of the pulse, to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.
14. The method according to claim 13, wherein the matrix comprises an organic compound in addition to the material that is to be fixed to the substrate, and wherein the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the 247946/ matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound.
15. The method according to claim 13, wherein the material comprises nanoparticles, and wherein sintering the material causes fusion of the nanoparticles at the point.
16. The method according to claim 13, wherein the pulses have a duration no greater than ns.
17. The method according to claim 13, wherein directing the pulsed energy beam comprises creating a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate.
18. The method according to claim 17, wherein the points in the sequence are mutually non-overlapping.
19. The method according to claim 17, and comprising, after creating the pattern, removing the matrix remaining on the substrate outside a locus of the pattern.
20. A system for manufacturing, comprising: a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate; a writing machine, which is configured to fix a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern; a matrix removal machine, which is configured to remove the matrix remaining on the substrate outside the fixed pattern; and a sintering machine, which is configured to sinter the material in the pattern after removal of the matrix.
21. The system according to claim 20, wherein the material to be patterned comprises 247946/ nanoparticles.
22. The system according to claim 21, wherein the material in the nanoparticles is electrically conductive, and wherein the pulsed energy beam comprises pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.
23. The system according to claim 20, wherein the writing machine is configured to direct a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.
24. The system according to claim 20, wherein the pulsed energy beam has a pulse repetition rate of at least 1 MHz.
25. The system according to claim 24, wherein the pulse repetition rate is at least 10 MHz.
26. The system according to claim 20, wherein the matrix comprises an organic compound in addition to the material to be patterned, and wherein the writing machine is configured to direct a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause evaporation of the organic compound from the matrix without fully sintering the material in the pattern.
27. The system according to claim 26, wherein the fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.
28. The system according to claim 20, wherein the sintering machine is configured to apply a bulk sintering process to the pattern fixed on the substrate.
29. The system according to claim 20, wherein the sintering machine is configured to apply 247946/ further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.
30. The system according to claim 20, and comprising a drying machine, which is configured to dry the matrix on the substrate before irradiating the coated substrate.
31. The system according to claim 20, wherein the matrix removal machine is configured to apply a solvent to remove the matrix remaining on the substrate outside the fixed pattern.
32. A system for manufacturing, comprising: a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate; and a writing machine, which is configured to direct a pulsed energy beam comprising pulses having a ramped temporal profile, in which an instantaneous power of each pulse increases gradually over a duration of the pulse, to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.
33. The system according to claim 32, wherein the matrix comprises an organic compound in addition to the material that is to be fixed to the substrate, and wherein the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound.
34. The system according to claim 32, wherein the material comprises nanoparticles, and wherein sintering the material causes fusion of the nanoparticles at the point.
35. The system according to claim 32, wherein the pulses have a duration no greater than ns.
36. The system according to claim 32, wherein the writing machine is configured to create a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate. 247946/
37. The system according to claim 36, wherein the points in the sequence are mutually non-overlapping.
38. The system according to claim 36, and comprising a matrix removal machine, which is configured to remove the matrix remaining on the substrate outside a locus of the pattern.
IL247946A 2014-04-10 2015-04-05 Pulsed-mode direct-write laser metallization IL247946B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461977766P 2014-04-10 2014-04-10
PCT/IB2015/052476 WO2015155662A1 (en) 2014-04-10 2015-04-05 Pulsed-mode direct-write laser metallization

Publications (2)

Publication Number Publication Date
IL247946A0 IL247946A0 (en) 2016-11-30
IL247946B true IL247946B (en) 2022-08-01

Family

ID=54287371

Family Applications (1)

Application Number Title Priority Date Filing Date
IL247946A IL247946B (en) 2014-04-10 2015-04-05 Pulsed-mode direct-write laser metallization

Country Status (7)

Country Link
EP (1) EP3140853A4 (en)
JP (1) JP6635313B2 (en)
KR (1) KR102345450B1 (en)
CN (1) CN106133891B (en)
IL (1) IL247946B (en)
TW (1) TWI661752B (en)
WO (1) WO2015155662A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111703212B (en) 2014-08-07 2022-11-18 奥宝科技有限公司 LIFT printing system
EP3207772B1 (en) 2014-10-19 2024-04-17 Orbotech Ltd. Lift printing of conductive traces onto a semiconductor substrate
US10633758B2 (en) 2015-01-19 2020-04-28 Orbotech Ltd. Printing of three-dimensional metal structures with a sacrificial support
CN107849687B (en) 2015-07-09 2020-01-14 奥博泰克有限公司 Control of laser induced forward transfer spray angle
KR102546450B1 (en) 2015-11-22 2023-06-21 오르보테크 엘티디. Control of surface properties of printed 3-dimensional structures
TW201901887A (en) 2017-05-24 2019-01-01 以色列商奧寶科技股份有限公司 Electrical interconnection circuit components on the substrate without prior patterning
KR102040530B1 (en) * 2018-04-25 2019-11-05 성균관대학교산학협력단 Method of forming redistribution layer using photo―sintering
ES2966467T3 (en) * 2018-05-08 2024-04-22 Seco Tools Ab A method of manufacturing a sintered body
JP2021190594A (en) * 2020-06-01 2021-12-13 旭化成株式会社 Structure, metal wiring manufacturing method, and metal wiring manufacturing device
CN112201571A (en) * 2020-10-30 2021-01-08 英诺激光科技股份有限公司 Method and system for forming ohmic contacts on silicon carbide substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100035375A1 (en) * 2003-07-16 2010-02-11 The Regents Of The University Of California Maskless nanofabrication of electronic components
US20100276405A1 (en) * 2008-03-31 2010-11-04 Electro Scientific Industries, Inc. Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61290796A (en) * 1985-06-19 1986-12-20 沖電気工業株式会社 Manufacture of thick film hybrid integrated circuit board
JPS63209193A (en) * 1987-02-25 1988-08-30 松下電器産業株式会社 Conductor pattern formation method
JPH11307914A (en) * 1998-04-21 1999-11-05 Matsushita Electric Ind Co Ltd Pattern forming method for thick film wiring board
US6921626B2 (en) * 2003-03-27 2005-07-26 Kodak Polychrome Graphics Llc Nanopastes as patterning compositions for electronic parts
US7294449B1 (en) * 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
JP2006038999A (en) * 2004-07-23 2006-02-09 Sumitomo Electric Ind Ltd Method for forming conductive circuit using laser irradiation and conductive circuit
TWI324423B (en) * 2005-11-01 2010-05-01 Cymer Inc Laser system
US20070105395A1 (en) * 2005-11-04 2007-05-10 Edward Kinzel Laser functionalization and patterning of thick-film inks
US8404160B2 (en) * 2007-05-18 2013-03-26 Applied Nanotech Holdings, Inc. Metallic ink
US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
JP2009290112A (en) * 2008-05-30 2009-12-10 Fujifilm Corp Conductive inorganic film, method for manufacturing thereof, wiring board, and semiconductor device
US8422197B2 (en) * 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure
KR101114256B1 (en) * 2010-07-14 2012-03-05 한국과학기술원 Method of fabricating pattern
TW201339279A (en) * 2011-11-24 2013-10-01 Showa Denko Kk Conductive-pattern formation method and composition for forming conductive pattern via light exposure or microwave heating
JP2016516211A (en) * 2013-02-18 2016-06-02 オルボテック リミテッド Two-step direct writing laser metallization

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100035375A1 (en) * 2003-07-16 2010-02-11 The Regents Of The University Of California Maskless nanofabrication of electronic components
US20100276405A1 (en) * 2008-03-31 2010-11-04 Electro Scientific Industries, Inc. Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes

Also Published As

Publication number Publication date
JP2017513040A (en) 2017-05-25
EP3140853A1 (en) 2017-03-15
JP6635313B2 (en) 2020-01-22
KR102345450B1 (en) 2021-12-29
EP3140853A4 (en) 2018-01-17
WO2015155662A1 (en) 2015-10-15
IL247946A0 (en) 2016-11-30
CN106133891B (en) 2020-03-03
TW201543978A (en) 2015-11-16
CN106133891A (en) 2016-11-16
TWI661752B (en) 2019-06-01
KR20160144985A (en) 2016-12-19

Similar Documents

Publication Publication Date Title
IL247946B (en) Pulsed-mode direct-write laser metallization
CN104674212B (en) By the method and apparatus of burst ultrashort pulse energy transmission positive deposition on matrix
TWI538277B (en) Method for depositing at least one conductive film on a substrate
KR101114256B1 (en) Method of fabricating pattern
JPH0856066A (en) Method for metallizing surface of substrate
JP6061308B2 (en) Method for producing at least one functional area on an electrical contact member such as a switch contact or a plug contact
JP2017528902A (en) 3D structure printing by laser-induced forward transfer
KR101728619B1 (en) Electrical components and methods and systems of manufacturing electrical components
IL258026B2 (en) Control of surface properties of printed three-dimensional structures
KR20100080120A (en) Sintering method of printed circuit by laser writing
JP7603655B2 (en) Solid Metal Printing
Shin et al. Direct conductive patterning on 3D printed structure using laser
MX2015004040A (en) COMPONENTS AND METHODS AND SYSTEMS OF MANUFACTURE OF ELECTRICAL COMPONENTS.
US10622244B2 (en) Pulsed-mode direct-write laser metallization
JP6759455B2 (en) Lubricated contact element and its manufacturing method
US20050274772A1 (en) Treating an area to increase affinity for a fluid
US9694190B2 (en) Method to pattern <10 micrometer conducting and passivating features on 3D substrates for implantable devices
KR101494216B1 (en) sintering method of copper ink using laser
KR100887391B1 (en) Manufacturing method of printed circuit board
KR102206052B1 (en) Sintering method of nanoparticles layer
JP2006276121A (en) Functional film pattern forming method, functional film pattern, and electronic device
Lee et al. Direct fabrication of microelectrodes on a polymer substrate using selective ultrashort pulsed laser ablation of inkjet‐printed Ag lines
US20150376756A1 (en) Laser patterning of multi-layer structures