KR20160144985A - pulsed-mode direct-write laser metallization - Google Patents

Abstract

A method for fabrication includes coating a substrate 22 with a matrix comprising a material on which a pattern is to be formed. A pattern is fixed in the matrix by directing the pulse energy beam to impinge on the pattern location so that adhesion of the material to the substrate occurs along the pattern without completely sintering the material into the pattern. The remaining matrix on the fixed pattern outer substrate is removed, and after the matrix is removed, the material in the pattern is sintered.

Description

Pulsed-mode direct-write laser metallization < RTI ID = 0.0 >

SUMMARY OF THE INVENTION The present invention is directed to a method and system for writing printed wiring on a circuit board, particularly direct recording of metal features.

Direct laser sintering of metal inks is a known technique in printed wiring metallization. For example, U.S. Patent Application Publication No. 2008/0286488 describes a method of forming a conductive film based on depositing a non-conductive film on a substrate surface. The film comprises a plurality of copper nanoparticles and at least exposes a portion of the film to a light beam such that the exposed portion is conductive by optically sintering or fusing the copper nanoparticles.

Kumpulainen et al. Describe direct laser sintering techniques in "Low Temperature Nanoparticle Sintering with Continuous Wave and Pulse Lasers," Optics & Laser Technology 43 (2011), pages 570-576. This document is directed to "printable electronics" that include nanoparticle inks printed on the substrate surface with additives such as dispersants and carrier liquids, which change the viscosity and provide good printing properties by separating the nanoparticles of the ink. In the sintering process, the ink particles are heated to a constant, ink-specific temperature, and the carrier liquid and the dispersant are evaporated from the ink. Additional heating after evaporation allows the nanoparticles to begin to agglomerate. Laser sintering is known to enable short sintering times and selective sintering, making it possible for print structures to contain fragile active ingredients produced with other technologies. This document describes tests conducted with two different types of lasers: pulsed lasers and continuous wave lasers.

Theodorakos et al. Describe another laser sintering technique in "Selective Laser Sintering of Ag Nanoparticles Ink for Applications in Flexible Electronics," Applied Surface Science 336 (2015), pages 157-162. This document is an efficient tool for selective laser sintering of the Ag nanoparticle ink layer on flexible substrates and is available with three different laser sources: CW or pulsed nanosecond and pico-second laser, operating at 532 and 1064 nm. The potential for The theoretical simulation shows that the picosecond laser pulse limits the heat affected area to only a few micrometers around the irradiated area of the ink layer. These predictions were confirmed experimentally.

Embodiments of the present invention provide an improved method and system for laser-based direct writing to a substrate.

According to one embodiment of the present invention, a method is provided for coating a substrate with a matrix containing a material to be patterned on a substrate, and applying pulse energy < RTI ID = 0.0 > And fixing the pattern within the matrix by directing the beam to impinge on the location of the pattern. The remaining matrix on the fixed pattern outer substrate is removed, and after removing the matrix, the material in the pattern is sintered.

In certain embodiments, the material to be patterned comprises nanoparticles. In such an embodiment, the material in the nanoparticle is electrically conductive, and the pulse resistance after the pulse energy beam has fixed the pattern is selected such that the trace resistance is at least 10 times greater than the final resistance achieved by complete sintering of the material in the pattern after removal of the matrix. Energy flux and a radiation pulse having a repetition rate.

Generally, directing the pulsed energy beam includes causing each of the positions in the substrate to collide, including directing the pulse sequence of the energy beam.

In the above embodiment, the pulse energy beam has a pulse repetition rate of 1 MHz or more, preferably 10 MHz or more.

Generally, the matrix comprises an organic compound in addition to the material from which the pattern is to be made, and directing the pulsed energy beam does not completely sinter the material in the pattern, but rather, for each pulse selected to generate evaporation of the organic compound from the matrix, And directing the pulse sequence of the energy beam having the energy beam. Fluence is selected for each pulse applied to fix the pattern so that the material remains sufficiently porous and allows the organic compound to evaporate through the pores in the material without removal or peeling of the material due to evaporation of the organic compound.

In certain embodiments, sintering of the material includes applying a bulk sintering treatment to the pattern fixed on the substrate. Optionally, sintering of the material includes directing additional pulses of the pulse energy beam to sinter a pattern fixed on the substrate.

In this embodiment, coating the substrate includes drying the matrix on the substrate before irradiating the coated substrate. Additionally or alternatively, removing the matrix includes applying solvent to remove the matrix remaining on the substrate outside the fixed pattern.

According to one embodiment of the present invention there is provided a method of forming a pattern on a substrate by coating a substrate with a matrix containing the material to be patterned on the substrate and forming a temporary ramped profile with sufficient fluence to secure the material to the substrate and sinter the material at a point a directing pulse energy beam comprising a pulse that causes a ramped temporal profile to impinge upon a point on a coated substrate.

In this embodiment, the matrix comprises an organic compound in addition to the material fixed to the substrate, and the ramped temporary profile and the fluorescence are sintered without causing removal or exfoliation of the material due to evaporation of the organic compound Before being caused to evaporate the organic compound from the matrix. In certain embodiments, the material comprises nanoparticles, and the sintering of the material causes fusion of the nanoparticles at the points.

In this embodiment, the pulse has a duration of 20 ns or less.

In certain embodiments, directing a pulse energy beam includes generating a pattern of material on the substrate by directing the pulse to impinge on a point sequence making a pattern on the coated substrate. Sequence points do not overlap each other. Generally, such a method involves removing the matrix remaining on the substrate outside the location of the pattern after generating the pattern.

According to an embodiment of the present invention, there is further provided a manufacturing system comprising a coating machine configured to coat a substrate with a matrix containing a material to be patterned on the substrate. The writing machine is configured to fix a pattern in the matrix by directing the pulse energy beam to impinge on the pattern position so that adhesion of the material to the substrate occurs along the pattern without completely sintering the material in the pattern . The matrix removal machine is configured to remove the remaining matrix from the fixed patterned outer substrate. The sintering machine is configured to sinter the material in the pattern after removing the matrix.

According to another embodiment of the present invention, there is further provided a manufacturing system comprising a coating machine configured to coat a substrate with a matrix containing a material to be patterned on the substrate. The recording machine directs a pulsed energy beam comprising a pulse which causes the ramped temporal profile to collide with a point on the coated substrate with the fluence sufficient to secure the material to the substrate and sinter the material at the point direct.

BRIEF DESCRIPTION OF THE DRAWINGS The invention will be fully understood from the following detailed description with reference to the drawings, in which: FIG.

1 is a schematic diagram illustrating a system for laser-based direct recording and steps in system operation, in accordance with an embodiment of the present invention.
2A-2E are schematic plan views of a substrate on which a trace pattern is recorded, shown as successive steps of the pattern formation process, in accordance with an embodiment of the present invention.
3A and 3B are schematic cross-sectional views of a substrate on which traces are recorded, shown as successive steps of the trace formation process, in accordance with an embodiment of the present invention.
Figures 4A-4D are schematic cross-sectional views of a substrate on which traces are recorded, shown in sequential steps during fixation of the traces, in accordance with an embodiment of the present invention.
4E is a schematic cross-sectional view of the substrate and traces of Figs. 4A-4D, followed by annealing of traces, in accordance with an embodiment of the present invention.
Figure 5 is a diagram illustrating the correlation of pulse energy thresholds for fixation of traces recorded on a substrate and damage thereto, in accordance with an embodiment of the present invention.
6A is a schematic plan view of a substrate in which points are recorded in a point array by a pulse beam having variable pulse parameters, in accordance with an embodiment of the present invention.
6B is a schematic plan view of a pattern formed on a substrate by applying a pulse beam at a series of points, in accordance with an embodiment of the present invention.

survey

As described in the PCT patent application PCT / IL2014 / 000014 described above, one-step direct laser sintering for metal inks and other nanoparticle sinterable inks does not provide a sufficiently uniform result. (The term "nanoparticle" is used herein to mean fine particles having a one-dimensional size of 100 nm or less in the description and claims.) This same problem occurs at least in part from heat transfer occurring during local sintering treatment do. Under these conditions, non-uniform thermal diffusion causes thermal change, which again causes inconsistent sintering. This effect is most severe when dealing with high resolution patterning with small metal features of a few microns. At the same time, several tens to several hundreds of direct sintering of the metallic ink J / cm ² Of high laser fluence.

In an embodiment of the present invention, recording and sintering are separated to improve trace uniformity and reliability of the result. The substrate is coated with a suitable matrix and can be dried after coating to remove excess solvent. (Such a matrix includes ink, paste or suspension containing nanoparticles and is referred to herein for convenience as "NP ink"). A pulsed energy beam source such as a laser scans over the substrate, Record the required pattern without sintering. As used herein and in the claims, the term "without fully sintering" means that the nanoparticles in the matrix bulk are highly separated from each other and, in the case of metal nanoparticles, the resistance of the trace at this stage But at least ten times greater than the final resistance that can be achieved after fully sintering.

At this stage of the process, the energy beam records the pattern and is referred to herein as "fixing " the pattern in the matrix. In an embodiment, the beam scans the position of the pattern to be written in the substrate and a sequence of pulses (or "bursts") is sufficient to cause adhesion of the material to the substrate along the pattern, Have the fluence. Such a fixing step stabilizes the matrix with respect to the unexamined matrix, for which the matrix is subsequently removed. The use of pulse irradiation in this step improves the pattern trace quality by reducing the possibility of damage due to rapid expansion of the trapped gas within the matrix.

During such a fixing step, before the nanoparticles are fully sintered, the material is sufficiently porous to allow organic compounds in the matrix to evaporate through the pores in the material, and thus otherwise to be generated by excessively rapid evaporation of the organic compound Prevent material removal or peeling. To ensure this kind of controlled evaporation, the laser (or other energy source) is directed to the pulse sequence so that it collides with each of the locations within the pattern with a high repetition rate-for example, at least 1 MHz, and possibly 10 MHz or more, do. Pulses per pulse are selected so that the required porosity of the matrix is maintained until the fixation is completed.

After the pattern is fixed in this manner, the matrix is removed from all non-fixed areas, leaving only the stable pattern. Such removal can be achieved, for example, by application of a chemical solvent or by radiation removal. Generally, the substrate is uniformly heated in a bulk sintering process to sinter the nanoparticles in the remaining pattern. This method achieves uniform metallization as opposed to the conventionally customized when direct laser sintering is used. This method is also particularly useful for printing thick lines because the laser-clamping step is less sensitive to thickness than full laser curing, for example, in-oven bulk sintering works well on thick ink traces.

Thus, these embodiments provide a simple and fast metallization process with fewer steps than conventional methods. The first stage of such a process involves only a relatively low laser power. Subsequently, the actual metallization step-bulk sintering process-requires a high fluence and may require high power with a large area coverage, such as a high power flash lamp or a high power laser or a heat source or light strip illumination by a laser array Source. ≪ / RTI > Because these embodiments avoid the high local temperatures associated with one-step direct laser sintering, they are suitable for use in patterning delicate and flexible substrates, such as plastics and foils.

In another embodiment, a pulsed laser or other energy beam is used for sintering and anchoring. In such a case, the inventors have found that pulses with a ramped temporal profile achieve significantly better results over conventional pulses with substantially uniform intensity over time (such as square wave pulses). The ramped temporary profile is preferred in that it causes evaporation of the organic compound from the matrix coated on the substrate prior to sintering the nanoparticle material. The transient profiles and fluences of the pulses are selected for the removal or exfoliation of the patterned material due to the evaporation of the organic compounds in order to improve such effects. These single-step embodiments are particularly suitable (although not the only solution) to create individual sintering points on the substrate and to create patterns made from these points.

The use of a pulsed laser for direct writing (for fixed or direct sintering) in embodiments of the present invention allows high resolution to be achieved with the possibility of adaptive registration, do. Metal lines and other features produced by the disclosed technique can achieve small widths such as a few microns. Such a resolution is limited to only the laser spot size that can be focused at a range of 1-2 μm or less. This resolution of line definition and quality can be improved by tuning the parameters of the laser during the scan. Any patterns are created in this manner and work directly from computer-aided design and manufacturing (CAD / CAM) data.

In certain embodiments, the entire cycle of recording and sintering is performed without contacting the substrate. This feature is particularly beneficial for applications such as the manufacture of solar cells and electronic plastic electronic foils.

Other applications of the techniques described herein include display back-end metallization for liquid crystal and organic light emitting diode (OLED) displays, touch screen metallization, shunting of OLED lighting devices, and printing electronics and devices on plastic foils . The techniques described herein are particularly suitable for recording patterns on various dielectrics, ceramics, semiconductors, polymers, paper and metal substrates, as well as metals, as well as semiconducting and dielectric particles (such as ceramic particles) Can similarly be applied.

Although the embodiments of the present invention refer to single metal layer formation, in alternative embodiments, the traces may be recorded on multiple layers by appropriate repetition of the present technique using the same or different inks used in each layer Do.

System Description

Figures 1 and 2A-2E schematically illustrate a laser-based direct recording system 20 and processing, in accordance with an embodiment of the present invention. 1 is a diagram illustrating a component apparatus and steps in a process performed by the system 20. FIG. 2A-2E are schematic plan views of a substrate 22 on which a trace pattern is recorded in system 20, shown as successive stages of the process. As noted above, the substrate 22 may comprise, for example, glass or other dielectric, ceramic, semiconductor, plastic foil or other polymeric material, paper or metal.

Initially, the coating machine 24 coats the substrate 22 (Fig. 2A) with a uniformly thick matrix layer 28, such as metal nano-particle (NP) ink, metal NP paste, or metal complex ink or paste (Fig. 2B). Such inks or pastes include, for example, silver, copper, nickel, palladium, and / or gold nanoparticles, and alloys of such metals, or non-metallic nanoparticles such as silicon or nano-ceramic particles. The thickness of the matrix layer 28 may vary from about 0.2 [mu] m to 10 [mu] m or more depending on the final result required. The coating machine 24 may employ any suitable area coating techniques known in the art, such as screen printing, slot-die or bar coating, spray coating, gravure printing, or spin coating.

Optionally, the drying machine 26 dries the matrix applied to the substrate 22. The ink or paste applied by the coating machine 24 contains a large amount of solvent, and the metal volume measurement at this stage is only about 40%. It is therefore desirable, even if not mandatory, to dry the matrix prior to the laser scanning step to increase the stability of the matrix and reduce the loss of laser energy to the solvent. Possible drying methods include low temperature baking (by convection or radiation), air flow, vacuum drying, or a combination of these techniques.

The laser recording machine 30 fixes the trace 42 pattern to the matrix 28, as shown in Fig. 2C. In a typical implementation, a substrate 22 with a coated matrix on a substrate is mounted on a suitable table 34, and a beam scanner 36 applies a pulse laser 32 (or other suitable pulse energy source) Scan.

The laser 32 "records " the required pattern in the matrix by exposing the matrix to a well-defined sequence of laser pulses at a predetermined position on the film. The pattern is determined by the controller 38 based on the appropriate CAD / CAM data stored in the memory 40. Pulse parameters including wavelength, point size, fluence, duration, pulse shape, scan rate and repetition rate are selected to best suit the pattern as described further below. For high throughput, multiple laser beams (generated by dividing a single high-power pulsed laser beam into sub-beams by multiple lasers or as shown in Figure 1) are simultaneously scanned over different areas of the substrate And each of the beams is independently controlled.

A wide variety of lasers and laser systems can be used in the laser recording machine 30. In an embodiment, the laser diode source is directly modulated at a high speed to emit a pulse of the desired shape on a time scale of one to several tens of nanoseconds. In such an embodiment, the pulse shape is ramped (as further described below), and the ramping time is adjusted to match the trace thickness. The pulse parameter is also adjusted according to the trace width, and a short pulse is used when a very narrow line is needed. The choice of the pulse parameter also depends on whether the machine 30 is used only for fixation, followed by bulk sintering, or whether the laser 32 is used to fully sinter the trace.

Optionally, a CW laser source, such as a CW filter laser, can be modulated with the required high repetition rate to provide the required pulse beam. Fast external modulators such as electro-optical and acousto-optic modulators can be used for this purpose.

3A is a schematic cross-sectional view showing one trace 42 secured within a matrix 28 by a recording machine 30, in accordance with one embodiment of the present invention. The trace 42 does not contain a large amount of sintered metal at this stage and is more attached to the substrate 22 than the surrounding matrix 28 due to laser exposure (resulting from light and heat effects) ). ≪ / RTI >

As described above, the laser parameters of the recording machine 30 are selected to provide the required local changes in the matrix characteristics. The optimal parameters will vary depending on the exact matrix material and size and the selected recording method, and will be determined in each case by actual testing and evaluation. In any case, the power applied at this stage is much less than that required for complete sintering of the nanoparticles in the matrix.

After irradiation, the matrix elimination machine 44 removes the non-fixed matrix 28 from the entire area of the substrate 22 leaving only the traces 42 (Fig. 2D). The machine 44 may include a solvent bath, for example, to contain a substrate in such a solvent bath to remove the outer matrix of the pattern. Optionally or additionally, the machine 44 may employ other types of removal techniques, such as chemical or physical removal of the non-fixed matrix.

3B is a schematic cross-sectional view of the trace 42 remaining on the substrate 22 after the removal of the matrix 28 by the superstructure 44. As shown in Fig.

Finally, traces 42 remaining on the substrate 22 after matrix removal are sintered at the sintering machine 46 and provide the sintered traces 50 as shown in FIG. 2E. The sintering machine 46 may include a conventional sintering oven if the substrate 22 is suitable for such a process (e.g., as in the case of a glass substrate). Alternatively, the sintering machine 46 may use optical sintering, which is suitable for sensitive substrates such as plastic foils. More alternatively, other sintering methods, such as plasma sintering or micro-sintering, are suitable for sensitive substrates, and both plasma sintering or micro-sintering may sinter the metal ink pattern without damaging the underlying plastic substrate .

In general, optical sintering (or microwave or plasma sintering) is preferred after oven sintering when treating copper ink, because of the tendency of copper to oxidize easily, as well as inks containing other metals that are susceptible to oxidation. Oven sintering of the copper ink can be used in an appropriate atmosphere (i.e., non-oxidizing atmosphere and / or reducing atmosphere).

The sintering machine 46 as shown in Fig. 1 uses optical sintering, and a high intensity optical source 48 is scanned over the surface of the substrate 22. Fig. The source 48 includes, for example, laser diode bar arrangements arranged in rows or arranged in a stack, thus providing the required fluence even on large areas. An average power of several kilowatts can be achieved using a commercially available laser diode in the near-infrared range (approximately 800-1000 nm). Commercially available laser diodes are available from Oclaro Inc. (San Jose, Calif.), Coherent Inc. (Santa Clara, California), or Jenoptik (Jena, Germany).

DETAILED DESCRIPTION OF THE INVENTION The following section describes a method that can be applied by the recording machine 30 to fix a desired pattern in a matrix 28. In the alternative embodiment shown in Figures 6A and 6B, the recording machine 30 can perform sintering by applying sufficient energy to the target points on the substrate that make up the pattern. In such a case, a separate slinging machine 46 is not required. The techniques described herein may be applied in connection with the materials and methods described in the aforementioned PCT patent application PCT / IL2014 / 000014, and with the materials and methods described in other suitable materials and methods known to those skilled in the art.

Pulsed laser pattern fixation

4A-4E are schematic cross-sectional views of substrate 22 for successive steps of recording traces 52 on a substrate in accordance with an embodiment of the present invention. Figures 4A-4D show the matrix 28 continuously during fixation of the trace, Figure 4E shows the traces 52 after annealing Respectively.

In particular, Figures 4A-4D illustrate cumulative effects of pulse bursts sent by the laser 32 to a predetermined position in the matrix 28. [ At the start of the process, the nanoparticles 50 are suspended in a significant amount of the volatile organic component matrix 28. Each successive laser pulse heats the matrix and evaporates additional organic components so that the density of the nanoparticles 50 in the matrix 28 increases from one pulse to the next. However, due to the diffusion of heat in the matrix and substrate, the increase in density is nearly uniform in the matrix volume. Thus, as shown in FIG. 4D, even after the holes remain between the nanoparticles 50 in the matrix 28 and almost all of the organic material has been removed from the matrix, the evaporation material can disappear through these holes. During subsequent sintering steps, the nanoparticles are melted to produce traces 52, as shown in Figure 4E.

Alternatively, the inventors have found that when a CW laser is used for pattern fixation, the density of the nanoparticles increases in particular in the upper layer of the matrix and the organic material is trapped below. Heating these trapped organic materials can cause rapid and explosive evaporation, causing the surrounding nanoparticle material to be removed or peeled off, thus degrading the quality of the traces formed on the substrate.

Alternatively, when pulse radiation is used for the fixation, a pulse parameter is selected to facilitate the gradual evaporation of the organic component of the matrix 28 during the pulse burst, avoiding the solidification of the top layer of the nanoparticles 50 . The inventors have found short pulses with a pulse width of about 1 ns to several tens of nanoseconds in order to provide the best results. Rapid fixation of traces Therefore, a high repetition rate-at least 1 MHz, possibly 10 MHz or more, is desirable to achieve high throughput. Pulse fluence and other parameters are selected to maximize throughput as much as possible without damage to the trace.

5 is a view showing a work window for fixing a trace by a laser pulse according to an embodiment of the present invention. The data points in the figure show the number of pulses applied to a given point on the substrate 22 in the abscissa, while the ordinate shows the energy fluence per pulse. Bottom curve 60 represents the minimum fluence required to hold the pattern in the matrix for a given number of pulses. In other words, the matrix will not be removed from the point after the fixing step, as long as the pulse at the set point has this minimum fluence for the specified number of pulses. Upper curve 62 represents the maximum fluence that can be used for a given number of pulses without damaging the trace. Above such fluence levels, rapid heating of the matrix causes removal and / or exfoliation to occur.

Thus, curves 60 and 62 define a working window for fixing by pulse of the matrix. As shown in Fig. 5, a greater number of low-fluence pulses provide a wider window and thus allow greater range of process errors. Within such bounds, the number of pulses and pulses applied to each position is chosen to provide the required robust fixation while maximizing process throughput.

The optimal choice also depends on the laser wavelength and spot size, as well as other process parameters such as the thickness and composition of the matrix 28. Curves 60 and 62 were generated using a diode laser operating at 980 nm in a 460 nm thick matrix film. Optionally, ultraviolet, visible, or other partial pulse lasers in the infrared range may be used. The number of pulses required to fix the pattern (as reflected by curve 60) tends to vary in magnitude exponentially with respect to film thickness.

Pulsed laser sintering

6A is a schematic plan view of a substrate in which points 74,78 are recorded in a point array by a pulse beam having a variable pulse parameter, in accordance with an embodiment of the present invention. In such an embodiment, the substrate was coated with a matrix comprising nanoparticle material. The pulsed laser beam is directed to impinge on each point of the substrate in the array with sufficient fluence to secure the material to the substrate and sinter the material at the point. In this case, the laser beam is a diode laser operating at 980 nm in pulse mode. The peak power of the laser pulse applied to generate the points 74 and 78 increased from the bottom of the array shown in FIG. 6A to the top, the pulse duration increased from left to right, and the maximum pulse time was set at about 20 ns lost. Similar results are obtained for other waveforms.

Two different pulse profiles were used to sinter the points shown in Figure 6A: a rectangular pulse profile 70 was used at sintering point 74 and a ramp pulse profile 72 at sintering point 78 Respectively. Profile 72 is "ramped" in that the instantaneous power of the pulse gradually increases over the duration of the pulse, with the greatest power occurring near the trailing edge of the pulse. Flamped ramped temporary profiles and ramped pulses are selected to allow evaporation of the organic compound from the matrix prior to sintering the nanoparticle material and prevent removal or exfoliation of the material due to explosive evaporation of the organic compound. This advantageous effect of the ramped profile can be seen over a wide range of peak power and pulse duration, as shown by point 78. [ Alternatively, the points 74 created using the profile 70 represent areas 76 of damage due to removal and exfoliation of the nanoparticle material.

The ramped profile 72 is particularly useful for creating single sintered points on a substrate. These points will have a larger diameter than the laser beam due to the transverse thermal spread of the beam energy in the close region of the matrix. (The ramped beam profile is less important in line scanning, since each point in the line, rather than the original point, is pre-heated when the previous point is sintered.) Single points at this same point Can be used to create a pattern on the substrate by directing the laser pulse to impinge on the point sequence to be created. Since each of the points has a larger area than the laser beam used to fix and sinter it, such sequence points may not overlap each other. That is, the beam regions of the laser pulses used to create the neighboring points need not overlap. After creating the pattern in this manner, the matrix remaining on the substrate outside the pattern location is removed in the previous embodiment.

6B is a schematic plan view of a pattern 80 formed on a substrate by applying a pulse beam in a point 82 sequence, in accordance with an embodiment of the present invention. In such an embodiment, the pattern 80 includes a line formed by the overlap of the point 78, even though the point 82 itself does not overlap. The pattern of the desired shape can be efficiently generated in this way.

The embodiment described above is described as an example, and the present invention is not limited to such an example. The scope of protection of the present invention includes combinations and subcombinations of the various features described above and includes various features, modifications and variations which will be apparent to those skilled in the art with reference to the above description and not described in the prior art.

Claims (38)

Coating the substrate with a matrix containing a material to be patterned on the substrate;
Fixing a pattern in the matrix by directing the pulse energy beam to impinge on the pattern location so that adhesion of the material to the substrate occurs along the pattern without completely sintering the material in the pattern;
Removing the remaining matrix from the fixed pattern outer substrate; And
And removing the matrix and then sintering the material in the pattern. The method of claim 1, wherein the material to be patterned comprises nanoparticles. 3. The method of claim 2, wherein the material in the nanoparticles is electrically conductive and the pulse resistance after the pulse energy beam fixes the pattern is selected such that the trace resistance is at least 10 times greater than the final resistance achieved by complete sintering of the material in the pattern after removal of the matrix. Energy fluence, and a radiation pulse having a repetition rate. The method of claim 1, comprising directing a pulsed energy beam to impinge each of the locations within the location on the substrate, including directing the pulse sequence of the energy beam. The method according to claim 1, wherein the pulsed energy beam has a pulse repetition rate of 1 MHz or more. 6. The method according to claim 5, wherein the pulse repetition rate is 10 MHz or more. The method of claim 1, wherein the matrix comprises an organic compound in addition to the material from which the pattern is to be formed, and directing the pulsed energy beam does not completely sinter the material into the pattern, And directing a pulse sequence of energy beams having a respective fluence. 8. The method of claim 7 wherein fluorescence is selected for each pulse applied to fix the pattern so that the material remains sufficiently porous and the organic compound evaporates through the hole in the material without removal or peeling of the material due to evaporation of the organic compound . A method according to any one of claims 1 to 8, wherein the sintering of the material comprises applying a bulk sintering treatment to the pattern fixed on the substrate. 9. A method according to any one of claims 1 to 8, wherein the sintering of the material comprises directing additional pulses of a pulse energy beam to sinter a pattern fixed on the substrate. A method according to any one of claims 1 to 8, wherein coating the substrate comprises drying the matrix on the substrate prior to irradiating the coated substrate. The method of any one of claims 1 to 8, wherein removing the matrix comprises applying solvent to remove the matrix remaining on the substrate outside the fixed pattern. Coating the substrate with a matrix containing a material to be patterned on the substrate; And
Directing a pulsed energy beam comprising a pulse that causes a ramped temporal profile with sufficient fluence to secure the material to the substrate and sinter the material at the point to impinge on the coated substrate. ≪ / RTI > 14. The method of claim 13, wherein the matrix comprises an organic compound in addition to the material secured to the substrate, and the ramped transient profile and fluorescence causes the material to migrate without causing removal or exfoliation of the material due to evaporation of the organic compound. Is selected to cause evaporation of the organic compound from the matrix prior to heating. 14. The method of claim 13, wherein the material comprises nanoparticles and causes the nanoparticles to fuse at the point of sintering the material. 14. The method of claim 13, wherein the pulse has a duration of 20 ns or less. 16. The method of any one of claims 13-16, creating a pattern of material on the substrate by directing the pulses to a point sequence of making a pattern on the coated substrate that directs the pulse energy beam ≪ / RTI > 18. The method of claim 17, wherein the sequence points are not superimposed on each other. 18. The method of claim 17, comprising removing the matrix remaining on the substrate after the pattern is generated, outside the location of the pattern. A coating machine configured to coat a substrate with a matrix containing a material to be patterned on the substrate;
A recording machine configured to fix a pattern in a matrix by directing a pulsed energy beam to impinge on a position of the pattern such that adhesion of material to the substrate occurs along the pattern without completely sintering the material into the pattern;
A matrix removal machine configured to remove a matrix remaining in the fixed pattern outer substrate; And
And a sintering machine configured to sinter the material in the pattern after removing the matrix. 21. The fabrication system of claim 20, wherein said material to be patterned comprises nanoparticles. 22. The method of claim 21 wherein the material in the nanoparticles is electrically conductive and the pulse resistance is selected such that the pulse energy beam fixes the pattern and then the trace resistance is at least 10 times greater than the final resistance achieved by complete sintering of the material in the pattern after removal of the matrix. Energy fluence, and a radiation pulse having a repetition rate. 21. The fabrication system of claim 20, wherein the recording machine is configured to direct a pulse sequence of energy beams to impinge each of the locations within the location on the substrate. 21. The manufacturing system according to claim 20, wherein the pulse energy beam has a pulse repetition rate of 1 MHz or more. 25. The manufacturing system according to claim 24, wherein the pulse repetition rate is 10 MHz or more. 21. The method of claim 20, wherein the matrix comprises an organic compound in addition to the material from which the pattern is to be formed, and directing the pulsed energy beam does not completely sinter the material into the pattern, And directing a pulse sequence of energy beams having a respective fluence. 27. The method of claim 26 wherein fluorescence is selected for each pulse applied to fix the pattern so that the material remains sufficiently porous and the organic compound evaporates through the hole in the material without removal or peeling of the material due to evaporation of the organic compound ≪ / RTI > 27. A manufacturing system according to any one of claims 20 to 27, wherein the sintering machine is configured to apply bulk sintering treatment to a pattern fixed on the substrate by sintering of the material. 27. A manufacturing system as claimed in any one of claims 20 to 27, wherein the sintering machine is configured to apply additional pulses of a pulse energy beam to sinter a stationary pattern on the substrate. 28. A manufacturing system as claimed in any one of claims 20 to 27, comprising a drying machine configured to dry the matrix on the substrate prior to irradiating the coated substrate. 27. A manufacturing system as claimed in any one of claims 20 to 27, wherein the matrix removal machine is configured to apply solvent to remove the matrix remaining on the substrate outside the fixed pattern. A coating machine configured to coat a substrate with a matrix containing a material to be patterned on the substrate; And
To direct a pulsed energy beam comprising a pulse that causes a ramped temporal profile with enough fluence to secure the material to the substrate and sinter the material at the point to impinge on the coated substrate. Wherein the recording system comprises a recording machine. 33. The method of claim 32, wherein the matrix comprises an organic compound in addition to the material secured to the substrate, and the ramped temporary profile and fluence is sufficient to cause the removal of material or removal of material Is selected to cause evaporation of the organic compound from the matrix prior to heating. 33. A manufacturing system according to claim 32, wherein the material comprises nanoparticles and causes sintering of the material to cause fusion of the nanoparticles at the point. 33. A manufacturing system as claimed in claim 32, wherein the pulse has a duration of less than or equal to 20 ns. 35. A manufacturing system as claimed in any one of claims 32 to 35, characterized in that the recording machine is arranged to generate a pattern of material on the substrate by directing the pulses to impinge on a point sequence of making a pattern on the coated substrate . 37. The manufacturing system of claim 36, wherein the sequence points do not overlap each other. 37. The manufacturing system of claim 36, comprising a matrix elimination machine configured to remove a matrix remaining on the substrate outside of the pattern.

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