KR101501795B1 - 광전 반도체 모듈 및 그 제조 방법 - Google Patents

광전 반도체 모듈 및 그 제조 방법 Download PDF

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KR101501795B1
KR101501795B1 KR1020107006175A KR20107006175A KR101501795B1 KR 101501795 B1 KR101501795 B1 KR 101501795B1 KR 1020107006175 A KR1020107006175 A KR 1020107006175A KR 20107006175 A KR20107006175 A KR 20107006175A KR 101501795 B1 KR101501795 B1 KR 101501795B1
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wafer
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semiconductor chip
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KR20100063072A (ko
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스테픈 코흐러
모리츠 엔글
프랜크 싱어
스테판 그로우취
토마스 제일러
매티아스 웨이스
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오스람 옵토 세미컨덕터스 게엠베하
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

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KR1020107006175A 2007-08-20 2008-08-11 광전 반도체 모듈 및 그 제조 방법 Expired - Fee Related KR101501795B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007039291A DE102007039291A1 (de) 2007-08-20 2007-08-20 Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
DE102007039291.7 2007-08-20
PCT/DE2008/001327 WO2009024125A1 (de) 2007-08-20 2008-08-11 Optoelektronisches halbleitermodul und verfahren zur herstellung eines solchen

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KR20100063072A KR20100063072A (ko) 2010-06-10
KR101501795B1 true KR101501795B1 (ko) 2015-03-11

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US (1) US9564555B2 (https=)
EP (1) EP2188852B1 (https=)
JP (1) JP5466641B2 (https=)
KR (1) KR101501795B1 (https=)
CN (2) CN101785119B (https=)
DE (1) DE102007039291A1 (https=)
TW (1) TWI513029B (https=)
WO (1) WO2009024125A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007039291A1 (de) 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
DE102009042479A1 (de) 2009-09-24 2011-03-31 Msg Lithoglas Ag Verfahren zum Herstellen einer Anordnung mit einem Bauelement auf einem Trägersubstrat und Anordnung sowie Verfahren zum Herstellen eines Halbzeuges und Halbzeug
JP5646981B2 (ja) 2010-12-21 2014-12-24 新光電気工業株式会社 枠付反射防止ガラス及びその製造方法
US20130188970A1 (en) * 2012-01-19 2013-07-25 Kalpendu Shastri Packaging Platform For Opto-Electronic Assemblies Using Silicon-Based Turning Mirrors
JP5958928B2 (ja) * 2012-02-15 2016-08-02 セイコーインスツル株式会社 光学デバイスの製造方法
DE102012104910B4 (de) * 2012-06-06 2022-12-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung und Apparatur mit einer solchen Vorrichtung
DE102012109028A1 (de) * 2012-09-25 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102013101262A1 (de) * 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer
DE102013008478A1 (de) * 2013-05-13 2014-11-13 Jenoptik Optical Systems Gmbh Verfahren zur Herstellung von in ein Gehäuse hermetisch dicht einlötbaren Fensterelementen und danach hergestellte Freiformfensterelemente
EP3028315A1 (en) * 2013-07-30 2016-06-08 Osram Opto Semiconductors Gmbh Optoelectronic device
DE102013219710A1 (de) * 2013-09-30 2015-04-02 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und System
JP6294113B2 (ja) * 2014-03-17 2018-03-14 新光電気工業株式会社 キャップ及びその製造方法、半導体装置及びその製造方法
KR102268900B1 (ko) * 2014-11-19 2021-06-23 엘지디스플레이 주식회사 유기 발광 표시 장치
DE102014117983A1 (de) * 2014-12-05 2016-06-09 Osram Opto Semiconductors Gmbh Konversionselement, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung von Konversionselementen
DE102015103571A1 (de) * 2015-03-11 2016-09-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl an Konversionselementen, Konversionselement und optoelektronisches Bauelement
WO2017114692A1 (en) * 2015-12-28 2017-07-06 Philips Lighting Holding B.V. Lighting device
US10132861B2 (en) * 2016-09-16 2018-11-20 Qualcomm Incorporated Visible laser circuit fault isolation
DE102017200162A1 (de) * 2017-01-09 2018-07-12 Robert Bosch Gmbh Verfahren zum Herstellen eines mikroelektromechanischen Bauteils und Wafer-Anordnung
JP6659612B2 (ja) * 2017-03-31 2020-03-04 Hoya Candeo Optronics株式会社 発光装置、光照射モジュール、及び光照射装置
US10054749B1 (en) 2017-04-12 2018-08-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical chip-scale package for use in a high channel density, high data rate data communications system having optical input/output (I/O) ports
JP7152670B2 (ja) * 2019-09-20 2022-10-13 日亜化学工業株式会社 光源装置およびその製造方法
EP3796489B1 (en) 2019-09-20 2022-04-27 Nichia Corporation Light source device and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019053A (ja) * 2005-07-05 2007-01-25 Hitachi Ltd ウェハ上で実装および封止を行う光モジュール
JP2007173875A (ja) * 2007-03-28 2007-07-05 Kyocera Corp 発光装置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039890A (en) * 1974-08-16 1977-08-02 Monsanto Company Integrated semiconductor light-emitting display array
JPH0736452B2 (ja) * 1985-04-30 1995-04-19 関西日本電気株式会社 レンズキヤツプの製造方法
US4874500A (en) * 1987-07-15 1989-10-17 Sri International Microelectrochemical sensor and sensor array
US4826272A (en) * 1987-08-27 1989-05-02 American Telephone And Telegraph Company At&T Bell Laboratories Means for coupling an optical fiber to an opto-electronic device
EP0539741B1 (en) 1991-09-30 2003-01-15 Canon Kabushiki Kaisha Anodic bonding process with light irradiation
US5272113A (en) * 1992-11-12 1993-12-21 Xerox Corporation Method for minimizing stress between semiconductor chips having a coefficient of thermal expansion different from that of a mounting substrate
DE19508222C1 (de) 1995-03-08 1996-06-05 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
US5529819A (en) * 1995-04-17 1996-06-25 Inko Industrial Corporation Pellicle assembly with vent structure
US5803579A (en) * 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
KR100527349B1 (ko) 1997-01-09 2005-11-09 니치아 카가쿠 고교 가부시키가이샤 질화물반도체소자
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
DE59814431D1 (de) 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US6383664B2 (en) * 1999-05-11 2002-05-07 The Dow Chemical Company Electroluminescent or photocell device having protective packaging
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
DE19963550B4 (de) * 1999-12-22 2004-05-06 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
AU2002359708A1 (en) * 2001-12-14 2003-07-15 Digital Optics International Corporation Uniform illumination system
TW526621B (en) 2002-02-07 2003-04-01 Vtera Technology Inc Light emitting diode structure
DE10219951A1 (de) 2002-05-03 2003-11-13 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zur Verkapselung eines Bauelements auf Basis organischer Halbleiter
DE10246283B3 (de) * 2002-10-02 2004-03-25 Infineon Technologies Ag Verfahren zur Herstellung von Kanälen und Kavitäten in Halbleitergehäusen und elektronisches Bauteil mit derartigen Kanälen und Kavitäten
US20040159900A1 (en) * 2003-01-27 2004-08-19 3M Innovative Properties Company Phosphor based light sources having front illumination
TWI243488B (en) * 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
JP4024721B2 (ja) 2003-06-20 2007-12-19 株式会社小糸製作所 車両用灯具及び光源モジュール
US6900509B2 (en) 2003-09-19 2005-05-31 Agilent Technologies, Inc. Optical receiver package
US6982437B2 (en) * 2003-09-19 2006-01-03 Agilent Technologies, Inc. Surface emitting laser package having integrated optical element and alignment post
US7520679B2 (en) 2003-09-19 2009-04-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical device package with turning mirror and alignment post
JP2005150408A (ja) 2003-11-17 2005-06-09 Sumitomo Electric Ind Ltd 発光素子搭載用パッケージおよび光源装置
JP4258367B2 (ja) * 2003-12-18 2009-04-30 株式会社日立製作所 光部品搭載用パッケージ及びその製造方法
DE102004045947A1 (de) * 2004-06-30 2006-01-19 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP2006135276A (ja) * 2004-10-04 2006-05-25 Hitachi Ltd 半導体発光素子搭載用パッケージ及びその製造方法
KR100649641B1 (ko) * 2005-05-31 2006-11-27 삼성전기주식회사 Led 패키지
US7847302B2 (en) * 2005-08-26 2010-12-07 Koninklijke Philips Electronics, N.V. Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
JP5209177B2 (ja) * 2005-11-14 2013-06-12 新光電気工業株式会社 半導体装置および半導体装置の製造方法
DE102006010729A1 (de) * 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Optisches Element, Herstellungsverfahren hierfür und Verbund-Bauteil mit einem optischen Element
JP2007180203A (ja) 2005-12-27 2007-07-12 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US8395725B2 (en) 2006-01-19 2013-03-12 Kabushiki Kaisha Toshiba Light emitting module, backlight using the same, and liquid crystal display device
TWM307194U (en) * 2006-06-29 2007-03-01 Shr-Fu Huang Structure of light emitting diode (LED)
DE102007039291A1 (de) 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
JP5805301B2 (ja) * 2011-04-15 2015-11-04 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH 光電子装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019053A (ja) * 2005-07-05 2007-01-25 Hitachi Ltd ウェハ上で実装および封止を行う光モジュール
JP2007173875A (ja) * 2007-03-28 2007-07-05 Kyocera Corp 発光装置

Also Published As

Publication number Publication date
DE102007039291A1 (de) 2009-02-26
US20100230697A1 (en) 2010-09-16
EP2188852A1 (de) 2010-05-26
JP5466641B2 (ja) 2014-04-09
TW200917532A (en) 2009-04-16
WO2009024125A1 (de) 2009-02-26
EP2188852B1 (de) 2017-04-26
CN102437269A (zh) 2012-05-02
US9564555B2 (en) 2017-02-07
JP2010537411A (ja) 2010-12-02
KR20100063072A (ko) 2010-06-10
CN101785119B (zh) 2012-02-01
CN102437269B (zh) 2015-11-18
CN101785119A (zh) 2010-07-21
TWI513029B (zh) 2015-12-11

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