KR101498576B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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Publication number
KR101498576B1
KR101498576B1 KR1020080098043A KR20080098043A KR101498576B1 KR 101498576 B1 KR101498576 B1 KR 101498576B1 KR 1020080098043 A KR1020080098043 A KR 1020080098043A KR 20080098043 A KR20080098043 A KR 20080098043A KR 101498576 B1 KR101498576 B1 KR 101498576B1
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South Korea
Prior art keywords
substrate
film
semiconductor
insulating film
ions
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Expired - Fee Related
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KR1020080098043A
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English (en)
Korean (ko)
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KR20090037312A (ko
Inventor
히데토 오누마
요이치 이이쿠보
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
KR1020080098043A 2007-10-10 2008-10-07 반도체 장치의 제작 방법 Expired - Fee Related KR101498576B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007264051 2007-10-10
JPJP-P-2007-264051 2007-10-10

Publications (2)

Publication Number Publication Date
KR20090037312A KR20090037312A (ko) 2009-04-15
KR101498576B1 true KR101498576B1 (ko) 2015-03-04

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KR1020080098043A Expired - Fee Related KR101498576B1 (ko) 2007-10-10 2008-10-07 반도체 장치의 제작 방법

Country Status (5)

Country Link
US (1) US8101501B2 (https=)
JP (1) JP2009111375A (https=)
KR (1) KR101498576B1 (https=)
CN (1) CN101409214B (https=)
TW (1) TWI453803B (https=)

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JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
EP2599110A4 (en) 2009-07-28 2014-04-23 Gigasi Solar Inc SYSTEMS, METHODS AND MATERIALS FOR CRYSTALLIZING SUBSTRATES THROUGH UNDERGLASHING GLASSES AND PRODUCTS MANUFACTURED BY SUCH METHODS
EP2282332B1 (en) * 2009-08-04 2012-06-27 S.O.I. TEC Silicon Method for fabricating a semiconductor substrate
JP5713603B2 (ja) * 2009-09-02 2015-05-07 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
TWI426565B (zh) * 2009-10-15 2014-02-11 友達光電股份有限公司 顯示面板及薄膜電晶體之閘極絕緣層的重工方法
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011066485A2 (en) * 2009-11-25 2011-06-03 Gigasi Solar, Inc. Systems, methods and products including features of laser irradiation and/or cleaving of silicon with other substrates or layers
TWI451474B (zh) * 2009-12-14 2014-09-01 Tien Hsi Lee 一種製作可轉移性晶體薄膜的方法
WO2011081000A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5618656B2 (ja) * 2010-07-09 2014-11-05 株式会社半導体エネルギー研究所 半導体基板の作製方法
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5839804B2 (ja) * 2011-01-25 2016-01-06 国立大学法人東北大学 半導体装置の製造方法、および半導体装置
KR102225764B1 (ko) 2011-01-25 2021-03-10 에베 그룹 에. 탈너 게엠베하 웨이퍼들의 영구적 결합을 위한 방법
EP2695183A1 (de) 2011-04-08 2014-02-12 Ev Group E. Thallner GmbH Verfahren zum permanenten bonden von wafern
CN103460342B (zh) 2011-04-08 2016-12-07 Ev 集团 E·索尔纳有限责任公司 晶片的永久粘合方法
CN102593285B (zh) * 2012-03-06 2014-07-09 华灿光电股份有限公司 一种回收图形化蓝宝石衬底的方法
FR2995445B1 (fr) * 2012-09-07 2016-01-08 Soitec Silicon On Insulator Procede de fabrication d'une structure en vue d'une separation ulterieure
JP6393574B2 (ja) 2014-10-09 2018-09-19 東京エレクトロン株式会社 エッチング方法
US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
JP6737066B2 (ja) * 2016-08-22 2020-08-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
CN106449689A (zh) * 2016-11-11 2017-02-22 中国电子科技集团公司第四十四研究所 带聚酰亚胺垫层的帧转移可见光ccd
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
JP7118973B2 (ja) 2017-08-04 2022-08-16 株式会社半導体エネルギー研究所 半導体装置
FR3077923B1 (fr) * 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
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JPH1197379A (ja) * 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
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Also Published As

Publication number Publication date
KR20090037312A (ko) 2009-04-15
JP2009111375A (ja) 2009-05-21
CN101409214A (zh) 2009-04-15
TWI453803B (zh) 2014-09-21
TW200931503A (en) 2009-07-16
US20090098709A1 (en) 2009-04-16
US8101501B2 (en) 2012-01-24
CN101409214B (zh) 2012-11-14

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