KR101496842B1 - 고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라 - Google Patents

고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라 Download PDF

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KR101496842B1
KR101496842B1 KR20070123033A KR20070123033A KR101496842B1 KR 101496842 B1 KR101496842 B1 KR 101496842B1 KR 20070123033 A KR20070123033 A KR 20070123033A KR 20070123033 A KR20070123033 A KR 20070123033A KR 101496842 B1 KR101496842 B1 KR 101496842B1
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South Korea
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insulating film
layer
concave portion
solid
photodiode
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KR20070123033A
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Korean (ko)
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KR20080053193A (ko
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요시노리 도우미야
게이지 다타니
하루히코 아지사와
유지 이노우에
데쓰히로 이와시타
히데아키 가토
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소니 주식회사
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Publication of KR20080053193A publication Critical patent/KR20080053193A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR20070123033A 2006-12-08 2007-11-29 고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라 KR101496842B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006332421 2006-12-08
JPJP-P-2006-00332421 2006-12-08
JPJP-P-2007-00106900 2007-04-16
JP2007106900A JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ

Publications (2)

Publication Number Publication Date
KR20080053193A KR20080053193A (ko) 2008-06-12
KR101496842B1 true KR101496842B1 (ko) 2015-02-27

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KR20070123033A KR101496842B1 (ko) 2006-12-08 2007-11-29 고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라

Country Status (4)

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JP (2) JP2008166677A (ja)
KR (1) KR101496842B1 (ja)
CN (1) CN100587961C (ja)
TW (1) TW200834904A (ja)

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JP5423042B2 (ja) * 2009-02-25 2014-02-19 ソニー株式会社 固体撮像装置の製造方法
JP4856204B2 (ja) 2009-03-24 2012-01-18 株式会社東芝 固体撮像装置の製造方法
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JP5332823B2 (ja) * 2009-03-31 2013-11-06 ソニー株式会社 固体撮像素子、撮像装置
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JP5564847B2 (ja) * 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101680899B1 (ko) * 2009-09-02 2016-11-29 소니 주식회사 고체 촬상 장치 및 그 제조 방법
JP5974425B2 (ja) * 2010-05-20 2016-08-23 ソニー株式会社 固体撮像装置及びその製造方法並びに電子機器
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JP2000196053A (ja) 1998-12-22 2000-07-14 Hyundai Electronics Ind Co Ltd イメ―ジセンサ及びその製造方法
JP2003197886A (ja) 2001-12-28 2003-07-11 Sony Corp 固体撮像素子およびその製造方法
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Also Published As

Publication number Publication date
KR20080053193A (ko) 2008-06-12
CN100587961C (zh) 2010-02-03
JP2009194402A (ja) 2009-08-27
JP5639748B2 (ja) 2014-12-10
TWI362108B (ja) 2012-04-11
JP2008166677A (ja) 2008-07-17
TW200834904A (en) 2008-08-16
CN101197386A (zh) 2008-06-11

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