KR101486406B1 - 스케일러블 2단자 나노튜브 스위치를 갖는 비휘발성 저항 메모리, 래치 회로 및 연산 회로 - Google Patents
스케일러블 2단자 나노튜브 스위치를 갖는 비휘발성 저항 메모리, 래치 회로 및 연산 회로 Download PDFInfo
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- KR101486406B1 KR101486406B1 KR1020097004498A KR20097004498A KR101486406B1 KR 101486406 B1 KR101486406 B1 KR 101486406B1 KR 1020097004498 A KR1020097004498 A KR 1020097004498A KR 20097004498 A KR20097004498 A KR 20097004498A KR 101486406 B1 KR101486406 B1 KR 101486406B1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
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- G11C2213/72—Array wherein the access device being a diode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Physics & Mathematics (AREA)
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- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
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Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83634306P | 2006-08-08 | 2006-08-08 | |
| US83643706P | 2006-08-08 | 2006-08-08 | |
| US60/836,437 | 2006-08-08 | ||
| US60/836,343 | 2006-08-08 | ||
| US84058606P | 2006-08-28 | 2006-08-28 | |
| US60/840,586 | 2006-08-28 | ||
| US85510906P | 2006-10-27 | 2006-10-27 | |
| US60/855,109 | 2006-10-27 | ||
| US91838807P | 2007-03-16 | 2007-03-16 | |
| US60/918,388 | 2007-03-16 | ||
| PCT/US2007/075521 WO2008021912A2 (en) | 2006-08-08 | 2007-08-08 | Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090057239A KR20090057239A (ko) | 2009-06-04 |
| KR101486406B1 true KR101486406B1 (ko) | 2015-01-26 |
Family
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097004498A Active KR101486406B1 (ko) | 2006-08-08 | 2007-08-08 | 스케일러블 2단자 나노튜브 스위치를 갖는 비휘발성 저항 메모리, 래치 회로 및 연산 회로 |
| KR1020097004772A Active KR101461688B1 (ko) | 2006-08-08 | 2007-08-08 | 비휘발성 나노튜브 다이오드 및 비휘발성 나노튜브 블럭과,이를 이용한 시스템 및 그 제조 방법 |
| KR1020097004520A Active KR101169499B1 (ko) | 2006-08-08 | 2007-08-08 | 비휘발성 나노튜브 블록을 사용한 메모리 소자 및 교차점 스위치와 이들 어레이 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097004772A Active KR101461688B1 (ko) | 2006-08-08 | 2007-08-08 | 비휘발성 나노튜브 다이오드 및 비휘발성 나노튜브 블럭과,이를 이용한 시스템 및 그 제조 방법 |
| KR1020097004520A Active KR101169499B1 (ko) | 2006-08-08 | 2007-08-08 | 비휘발성 나노튜브 블록을 사용한 메모리 소자 및 교차점 스위치와 이들 어레이 |
Country Status (5)
| Country | Link |
|---|---|
| EP (5) | EP2057633B1 (https=) |
| JP (4) | JP6114487B2 (https=) |
| KR (3) | KR101486406B1 (https=) |
| TW (3) | TWI457923B (https=) |
| WO (3) | WO2008021911A2 (https=) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9911743B2 (en) | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| US8102018B2 (en) | 2005-05-09 | 2012-01-24 | Nantero Inc. | Nonvolatile resistive memories having scalable two-terminal nanotube switches |
| US8008745B2 (en) | 2005-05-09 | 2011-08-30 | Nantero, Inc. | Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements |
| US7982209B2 (en) | 2007-03-27 | 2011-07-19 | Sandisk 3D Llc | Memory cell comprising a carbon nanotube fabric element and a steering element |
| US7667999B2 (en) | 2007-03-27 | 2010-02-23 | Sandisk 3D Llc | Method to program a memory cell comprising a carbon nanotube fabric and a steering element |
| JP2010522991A (ja) * | 2007-03-27 | 2010-07-08 | サンディスク スリーディー，エルエルシー | カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法 |
| JP5274799B2 (ja) * | 2007-08-22 | 2013-08-28 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
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