KR101483417B1 - 광전변환장치의 제조 방법 - Google Patents

광전변환장치의 제조 방법 Download PDF

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Publication number
KR101483417B1
KR101483417B1 KR20080119602A KR20080119602A KR101483417B1 KR 101483417 B1 KR101483417 B1 KR 101483417B1 KR 20080119602 A KR20080119602 A KR 20080119602A KR 20080119602 A KR20080119602 A KR 20080119602A KR 101483417 B1 KR101483417 B1 KR 101483417B1
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South Korea
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semiconductor layer
single crystal
layer
crystal semiconductor
electrode
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KR20090056899A (ko
Inventor
푸미토 이사카
쇼 카토
코세이 네이
류 코마츠
아키히사 시모무라
코지 다이리키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR20080119602A 2007-11-30 2008-11-28 광전변환장치의 제조 방법 Expired - Fee Related KR101483417B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007310817 2007-11-30
JPJP-P-2007-310817 2007-11-30

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KR20090056899A KR20090056899A (ko) 2009-06-03
KR101483417B1 true KR101483417B1 (ko) 2015-01-16

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US (1) US7985604B2 (https=)
EP (1) EP2065946A2 (https=)
JP (1) JP5248994B2 (https=)
KR (1) KR101483417B1 (https=)

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JP5248995B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5572307B2 (ja) * 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
US20110018104A1 (en) * 2008-01-16 2011-01-27 Toru Nagashima METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
JP5438986B2 (ja) 2008-02-19 2014-03-12 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
US8338218B2 (en) * 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
JP5552276B2 (ja) * 2008-08-01 2014-07-16 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
SG162675A1 (en) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device
JP5706670B2 (ja) 2009-11-24 2015-04-22 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
KR101112494B1 (ko) * 2010-03-17 2012-03-13 한국과학기술원 광기전력 장치의 제조 방법
JP5755931B2 (ja) 2010-04-28 2015-07-29 株式会社半導体エネルギー研究所 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法
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US8173452B1 (en) 2010-12-29 2012-05-08 Twin Creeks Technologies, Inc. Method to form a device by constructing a support element on a thin semiconductor lamina
US8435804B2 (en) 2010-12-29 2013-05-07 Gtat Corporation Method and apparatus for forming a thin lamina
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US8268645B2 (en) 2010-12-29 2012-09-18 Twin Creeks Technologies, Inc. Method and apparatus for forming a thin lamina
WO2012092145A2 (en) * 2010-12-29 2012-07-05 Twin Creeks Technologies, Inc. A method to form a device by constructing a support element on a thin semiconductor lamina
CN103370800A (zh) * 2010-12-29 2013-10-23 Gtat公司 用于形成薄层板的方法和设备
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
US8916954B2 (en) * 2012-02-05 2014-12-23 Gtat Corporation Multi-layer metal support
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JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法

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Publication number Priority date Publication date Assignee Title
JPS63196082A (ja) * 1987-02-10 1988-08-15 Toa Nenryo Kogyo Kk 太陽電池の製造方法
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
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JP2000150940A (ja) * 1998-11-18 2000-05-30 Denso Corp 半導体微粒子集合体及びその製造方法

Also Published As

Publication number Publication date
JP5248994B2 (ja) 2013-07-31
EP2065946A2 (en) 2009-06-03
KR20090056899A (ko) 2009-06-03
US7985604B2 (en) 2011-07-26
US20090142908A1 (en) 2009-06-04
JP2009152566A (ja) 2009-07-09

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