KR101474028B1 - 에칭된 나노핀 트랜지스터 - Google Patents

에칭된 나노핀 트랜지스터 Download PDF

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Publication number
KR101474028B1
KR101474028B1 KR1020087026973A KR20087026973A KR101474028B1 KR 101474028 B1 KR101474028 B1 KR 101474028B1 KR 1020087026973 A KR1020087026973 A KR 1020087026973A KR 20087026973 A KR20087026973 A KR 20087026973A KR 101474028 B1 KR101474028 B1 KR 101474028B1
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South Korea
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forming
fin
gate
surrounding
pin
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KR1020087026973A
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Korean (ko)
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KR20090005149A (ko
Inventor
레오나르드 포베스
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마이크론 테크놀로지, 인크.
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Priority claimed from US11/397,527 external-priority patent/US7425491B2/en
Priority claimed from US11/397,406 external-priority patent/US20070228491A1/en
Priority claimed from US11/397,430 external-priority patent/US8734583B2/en
Priority claimed from US11/397,413 external-priority patent/US7491995B2/en
Priority claimed from US11/397,358 external-priority patent/US8354311B2/en
Application filed by 마이크론 테크놀로지, 인크. filed Critical 마이크론 테크놀로지, 인크.
Publication of KR20090005149A publication Critical patent/KR20090005149A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
KR1020087026973A 2006-04-04 2007-04-03 에칭된 나노핀 트랜지스터 Active KR101474028B1 (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US11/397,527 US7425491B2 (en) 2006-04-04 2006-04-04 Nanowire transistor with surrounding gate
US11/397,406 US20070228491A1 (en) 2006-04-04 2006-04-04 Tunneling transistor with sublithographic channel
US11/397,430 2006-04-04
US11/397,413 2006-04-04
US11/397,430 US8734583B2 (en) 2006-04-04 2006-04-04 Grown nanofin transistors
US11/397,406 2006-04-04
US11/397,527 2006-04-04
US11/397,413 US7491995B2 (en) 2006-04-04 2006-04-04 DRAM with nanofin transistors
US11/397,358 US8354311B2 (en) 2006-04-04 2006-04-04 Method for forming nanofin transistors
US11/397,358 2006-04-04

Publications (2)

Publication Number Publication Date
KR20090005149A KR20090005149A (ko) 2009-01-12
KR101474028B1 true KR101474028B1 (ko) 2014-12-17

Family

ID=38325217

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020087026973A Active KR101474028B1 (ko) 2006-04-04 2007-04-03 에칭된 나노핀 트랜지스터
KR1020087026970A Withdrawn KR20090007393A (ko) 2006-04-04 2007-04-03 나노핀 터널링 트랜지스터
KR1020147009477A Ceased KR20140051463A (ko) 2006-04-04 2007-04-03 서라운딩 게이트를 구비한 나노선 트랜지스터
KR1020087027075A Ceased KR20090006169A (ko) 2006-04-04 2007-04-03 서라운딩 게이트를 구비한 나노선 트랜지스터
KR1020087027077A Active KR101378256B1 (ko) 2006-04-04 2007-04-03 성장형 나노핀 트랜지스터

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020087026970A Withdrawn KR20090007393A (ko) 2006-04-04 2007-04-03 나노핀 터널링 트랜지스터
KR1020147009477A Ceased KR20140051463A (ko) 2006-04-04 2007-04-03 서라운딩 게이트를 구비한 나노선 트랜지스터
KR1020087027075A Ceased KR20090006169A (ko) 2006-04-04 2007-04-03 서라운딩 게이트를 구비한 나노선 트랜지스터
KR1020087027077A Active KR101378256B1 (ko) 2006-04-04 2007-04-03 성장형 나노핀 트랜지스터

Country Status (5)

Country Link
EP (4) EP2002469A1 (cg-RX-API-DMAC10.html)
JP (4) JP5229635B2 (cg-RX-API-DMAC10.html)
KR (5) KR101474028B1 (cg-RX-API-DMAC10.html)
SG (2) SG170827A1 (cg-RX-API-DMAC10.html)
WO (4) WO2007136461A2 (cg-RX-API-DMAC10.html)

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US7425491B2 (en) 2006-04-04 2008-09-16 Micron Technology, Inc. Nanowire transistor with surrounding gate
US8354311B2 (en) 2006-04-04 2013-01-15 Micron Technology, Inc. Method for forming nanofin transistors
US8643087B2 (en) 2006-09-20 2014-02-04 Micron Technology, Inc. Reduced leakage memory cells
KR100945511B1 (ko) * 2008-04-10 2010-03-09 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
US7897494B2 (en) * 2008-06-24 2011-03-01 Imec Formation of single crystal semiconductor nanowires
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KR101656970B1 (ko) 2011-12-20 2016-09-12 인텔 코포레이션 분리된 바디 부분을 가지는 반도체 디바이스 및 그 형성방법
KR20130131708A (ko) 2012-05-24 2013-12-04 에스케이하이닉스 주식회사 메모리 셀 어레이 및 이를 포함하는 가변 저항 메모리 장치
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Also Published As

Publication number Publication date
EP2002470B1 (en) 2016-03-09
JP2009532905A (ja) 2009-09-10
EP2002468A1 (en) 2008-12-17
WO2007120493A1 (en) 2007-10-25
KR20090005149A (ko) 2009-01-12
JP2009532903A (ja) 2009-09-10
WO2007114927A1 (en) 2007-10-11
SG170827A1 (en) 2011-05-30
KR101378256B1 (ko) 2014-03-25
KR20090007393A (ko) 2009-01-16
SG172643A1 (en) 2011-07-28
WO2007120492A1 (en) 2007-10-25
JP5229635B2 (ja) 2013-07-03
KR20090007397A (ko) 2009-01-16
EP2002469A1 (en) 2008-12-17
JP2009532904A (ja) 2009-09-10
WO2007136461A3 (en) 2008-01-17
JP2009532907A (ja) 2009-09-10
EP2002470A2 (en) 2008-12-17
JP5234439B2 (ja) 2013-07-10
KR20090006169A (ko) 2009-01-14
WO2007136461A2 (en) 2007-11-29
KR20140051463A (ko) 2014-04-30
EP2008309A1 (en) 2008-12-31
EP2002468B1 (en) 2013-07-24
JP5229587B2 (ja) 2013-07-03

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