KR101469295B1 - 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어 - Google Patents

페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어 Download PDF

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Publication number
KR101469295B1
KR101469295B1 KR1020097020083A KR20097020083A KR101469295B1 KR 101469295 B1 KR101469295 B1 KR 101469295B1 KR 1020097020083 A KR1020097020083 A KR 1020097020083A KR 20097020083 A KR20097020083 A KR 20097020083A KR 101469295 B1 KR101469295 B1 KR 101469295B1
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South Korea
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address
page
block
circuit
addresses
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KR1020097020083A
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Korean (ko)
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KR20090125142A (ko
Inventor
홍범 편
Original Assignee
컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
KR1020097020083A 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어 Expired - Fee Related KR101469295B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/711,043 2007-02-27
US11/711,043 US7577059B2 (en) 2007-02-27 2007-02-27 Decoding control with address transition detection in page erase function

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147002657A Division KR20140019881A (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어

Publications (2)

Publication Number Publication Date
KR20090125142A KR20090125142A (ko) 2009-12-03
KR101469295B1 true KR101469295B1 (ko) 2014-12-04

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Application Number Title Priority Date Filing Date
KR1020097020083A Expired - Fee Related KR101469295B1 (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어
KR1020147002657A Ceased KR20140019881A (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어

Family Applications After (1)

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KR1020147002657A Ceased KR20140019881A (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어

Country Status (9)

Country Link
US (2) US7577059B2 (https=)
EP (1) EP2132748B1 (https=)
JP (2) JP5291001B2 (https=)
KR (2) KR101469295B1 (https=)
CN (1) CN101636790B (https=)
CA (1) CA2676639A1 (https=)
ES (1) ES2423283T3 (https=)
TW (1) TWI456576B (https=)
WO (1) WO2008104049A1 (https=)

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US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
US8189390B2 (en) * 2009-03-05 2012-05-29 Mosaid Technologies Incorporated NAND flash architecture with multi-level row decoding
KR101636015B1 (ko) * 2010-02-11 2016-07-05 삼성전자주식회사 불휘발성 데이터 저장 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템
KR101605911B1 (ko) 2010-07-09 2016-03-23 에스케이하이닉스 주식회사 불휘발성 메모리 소자 및 그 소거방법
TWI473114B (zh) * 2012-03-19 2015-02-11 Macronix Int Co Ltd 偵測位址轉變之電路與方法
US9047936B2 (en) * 2012-05-29 2015-06-02 Lsi Corporation Memory device having control circuitry for write tracking using feedback-based controller
KR20140007990A (ko) 2012-07-09 2014-01-21 삼성전자주식회사 불휘발성 램을 포함하는 사용자 장치 및 그것의 데이터 관리 방법
KR102025088B1 (ko) 2012-09-03 2019-09-25 삼성전자 주식회사 메모리 컨트롤러 및 상기 메모리 컨트롤러를 포함하는 전자장치
US20140071783A1 (en) * 2012-09-13 2014-03-13 Lsi Corporation Memory device with clock generation based on segmented address change detection
CN104217751A (zh) * 2013-06-03 2014-12-17 辉达公司 一种存储器
FR3006804A1 (fr) * 2013-06-05 2014-12-12 St Microelectronics Rousset Procede d’effacement par bloc d’une memoire de type eeprom effacable par page
EP3023990A1 (en) * 2014-11-20 2016-05-25 Nxp B.V. Multi independent page erase
CN108962319B (zh) * 2018-06-20 2021-03-26 芯天下技术股份有限公司 一种译码器控制电路及Nor Flash存储器的版图布局方法
CN110910923A (zh) * 2018-09-14 2020-03-24 北京兆易创新科技股份有限公司 一种字线译码方法及非易失存储器系统
US11250895B1 (en) * 2020-11-04 2022-02-15 Qualcomm Incorporated Systems and methods for driving wordlines using set-reset latches

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US5440518A (en) * 1991-06-12 1995-08-08 Hazani; Emanuel Non-volatile memory circuits, architecture and methods
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Also Published As

Publication number Publication date
JP2010519674A (ja) 2010-06-03
TWI456576B (zh) 2014-10-11
KR20090125142A (ko) 2009-12-03
CN101636790A (zh) 2010-01-27
CA2676639A1 (en) 2008-09-04
TW200905686A (en) 2009-02-01
CN101636790B (zh) 2013-04-03
US20090185424A1 (en) 2009-07-23
JP5291001B2 (ja) 2013-09-18
US7577059B2 (en) 2009-08-18
US20080205164A1 (en) 2008-08-28
EP2132748A4 (en) 2010-04-07
US7778107B2 (en) 2010-08-17
EP2132748A1 (en) 2009-12-16
ES2423283T3 (es) 2013-09-19
WO2008104049A1 (en) 2008-09-04
EP2132748B1 (en) 2013-05-22
JP2013168211A (ja) 2013-08-29
KR20140019881A (ko) 2014-02-17
JP5544442B2 (ja) 2014-07-09

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