KR101380799B1 - 발광소자 및 그 제조방법 - Google Patents

발광소자 및 그 제조방법 Download PDF

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Publication number
KR101380799B1
KR101380799B1 KR1020100053762A KR20100053762A KR101380799B1 KR 101380799 B1 KR101380799 B1 KR 101380799B1 KR 1020100053762 A KR1020100053762 A KR 1020100053762A KR 20100053762 A KR20100053762 A KR 20100053762A KR 101380799 B1 KR101380799 B1 KR 101380799B1
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South Korea
Prior art keywords
light emitting
layer
epitaxy
growth condition
process conversion
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English (en)
Korean (ko)
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KR20100131948A (ko
Inventor
충-잉 창
웬-지아 후앙
차오-수 라이
티엔-쿤 린
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에피스타 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
KR1020100053762A 2009-06-08 2010-06-08 발광소자 및 그 제조방법 Expired - Fee Related KR101380799B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW098119155A TWI398966B (zh) 2009-06-08 2009-06-08 發光元件及其製造方法
TW098119155 2009-06-08

Publications (2)

Publication Number Publication Date
KR20100131948A KR20100131948A (ko) 2010-12-16
KR101380799B1 true KR101380799B1 (ko) 2014-04-04

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Family Applications (1)

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KR1020100053762A Expired - Fee Related KR101380799B1 (ko) 2009-06-08 2010-06-08 발광소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US8304787B2 (enExample)
JP (2) JP2010283354A (enExample)
KR (1) KR101380799B1 (enExample)
DE (1) DE102010029803B4 (enExample)
TW (1) TWI398966B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法
JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
CN103811593B (zh) 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
CN103779374B (zh) * 2014-01-29 2019-01-15 佛山市南海区联合广东新光源产业创新中心 发光整流芯片
WO2017139300A1 (en) * 2016-02-09 2017-08-17 The Penn State Research Foundation Device comprising a light-emitting diode and a schottky barrier diode rectifier, and method of fabrication
US10879217B1 (en) * 2019-09-11 2020-12-29 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel

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* Cited by examiner, † Cited by third party
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JPH0983016A (ja) * 1995-09-18 1997-03-28 Nichia Chem Ind Ltd 窒化物半導体の成長方法
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
JP2009200382A (ja) * 2008-02-25 2009-09-03 Panasonic Corp 半導体発光素子の製造方法
KR20100046195A (ko) * 2007-08-31 2010-05-06 라티스 파워(지앙시) 코포레이션 초고 역방향 항복 전압을 갖는 갈륨 니트라이드 발광 장치

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JP2890390B2 (ja) * 1994-07-06 1999-05-10 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3448196B2 (ja) * 1997-07-25 2003-09-16 日亜化学工業株式会社 窒化物半導体発光素子
JP3496512B2 (ja) * 1997-06-30 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
JP3516434B2 (ja) * 1997-12-25 2004-04-05 昭和電工株式会社 化合物半導体発光素子
KR100589621B1 (ko) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP4431290B2 (ja) * 2001-05-28 2010-03-10 昭和電工株式会社 半導体素子および半導体層
EP1419535B1 (en) * 2001-08-20 2008-01-16 Showa Denko Kabushiki Kaisha Multicolor light-emitting lamp and light source
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
TWI239666B (en) * 2004-09-16 2005-09-11 Chen-Lun Hsingchen LED package with diode protection circuit
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
WO2006054737A1 (en) * 2004-11-18 2006-05-26 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
TW200723559A (en) * 2005-12-13 2007-06-16 Ind Tech Res Inst Alternating current (AC) light emitting assembly and AC light emitting device
JP2008541477A (ja) * 2005-05-20 2008-11-20 クリー， インコーポレイティッド 高効率の白色発光ダイオード
JP3972943B2 (ja) * 2005-07-19 2007-09-05 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
DE112006002403T5 (de) * 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
KR100968843B1 (ko) * 2005-12-16 2010-07-09 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
JP4936277B2 (ja) * 2006-07-13 2012-05-23 国立大学法人東京農工大学 アルミニウム系ｉｉｉ族窒化物結晶の製造方法
JP2008140893A (ja) * 2006-11-30 2008-06-19 Sumitomo Electric Ind Ltd 半導体デバイスおよびその製造方法
JP2009016467A (ja) * 2007-07-03 2009-01-22 Sony Corp 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置
JP5139005B2 (ja) * 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0983016A (ja) * 1995-09-18 1997-03-28 Nichia Chem Ind Ltd 窒化物半導体の成長方法
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
KR20100046195A (ko) * 2007-08-31 2010-05-06 라티스 파워(지앙시) 코포레이션 초고 역방향 항복 전압을 갖는 갈륨 니트라이드 발광 장치
JP2009200382A (ja) * 2008-02-25 2009-09-03 Panasonic Corp 半導体発光素子の製造方法

Also Published As

Publication number Publication date
JP2010283354A (ja) 2010-12-16
US8304787B2 (en) 2012-11-06
TW201044631A (en) 2010-12-16
DE102010029803B4 (de) 2021-01-28
US20100308348A1 (en) 2010-12-09
DE102010029803A1 (de) 2011-09-29
KR20100131948A (ko) 2010-12-16
JP2015097289A (ja) 2015-05-21
TWI398966B (zh) 2013-06-11

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