TWI398966B - 發光元件及其製造方法 - Google Patents

發光元件及其製造方法 Download PDF

Info

Publication number
TWI398966B
TWI398966B TW098119155A TW98119155A TWI398966B TW I398966 B TWI398966 B TW I398966B TW 098119155 A TW098119155 A TW 098119155A TW 98119155 A TW98119155 A TW 98119155A TW I398966 B TWI398966 B TW I398966B
Authority
TW
Taiwan
Prior art keywords
light
layer
illuminating
emitting
type semiconductor
Prior art date
Application number
TW098119155A
Other languages
English (en)
Chinese (zh)
Other versions
TW201044631A (en
Inventor
張中英
黃文嘉
賴昭序
林天坤
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Priority to TW098119155A priority Critical patent/TWI398966B/zh
Priority to US12/795,169 priority patent/US8304787B2/en
Priority to JP2010129948A priority patent/JP2010283354A/ja
Priority to DE102010029803.4A priority patent/DE102010029803B4/de
Priority to KR1020100053762A priority patent/KR101380799B1/ko
Publication of TW201044631A publication Critical patent/TW201044631A/zh
Application granted granted Critical
Publication of TWI398966B publication Critical patent/TWI398966B/zh
Priority to JP2015012090A priority patent/JP2015097289A/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
TW098119155A 2009-06-08 2009-06-08 發光元件及其製造方法 TWI398966B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW098119155A TWI398966B (zh) 2009-06-08 2009-06-08 發光元件及其製造方法
US12/795,169 US8304787B2 (en) 2009-06-08 2010-06-07 Light-emitting device and the manufacturing method thereof
JP2010129948A JP2010283354A (ja) 2009-06-08 2010-06-07 発光ダイオード及びその製造方法
DE102010029803.4A DE102010029803B4 (de) 2009-06-08 2010-06-08 Lichtemittierende Vorrichtung
KR1020100053762A KR101380799B1 (ko) 2009-06-08 2010-06-08 발광소자 및 그 제조방법
JP2015012090A JP2015097289A (ja) 2009-06-08 2015-01-26 発光ダイオード及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098119155A TWI398966B (zh) 2009-06-08 2009-06-08 發光元件及其製造方法

Publications (2)

Publication Number Publication Date
TW201044631A TW201044631A (en) 2010-12-16
TWI398966B true TWI398966B (zh) 2013-06-11

Family

ID=43300111

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098119155A TWI398966B (zh) 2009-06-08 2009-06-08 發光元件及其製造方法

Country Status (5)

Country Link
US (1) US8304787B2 (enExample)
JP (2) JP2010283354A (enExample)
KR (1) KR101380799B1 (enExample)
DE (1) DE102010029803B4 (enExample)
TW (1) TWI398966B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法
JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
CN103811593B (zh) 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
CN103779374B (zh) * 2014-01-29 2019-01-15 佛山市南海区联合广东新光源产业创新中心 发光整流芯片
US10510800B2 (en) * 2016-02-09 2019-12-17 The Penn State Research Foundation Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication
US10879217B1 (en) * 2019-09-11 2020-12-29 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW559899B (en) * 2001-05-28 2003-11-01 Showa Denko Kk Forming method for semiconductor layer and semiconductor element
US20060055012A1 (en) * 2004-09-16 2006-03-16 Chen-Lun Hsin Chen LED package with zener diode protection circuit
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
TW200805704A (en) * 2005-09-07 2008-01-16 Showa Denko Kk Compound semiconductor device
US7479731B2 (en) * 2001-08-20 2009-01-20 Showa Denko K.K. Multicolor light-emitting lamp and light source
US20090085048A1 (en) * 2007-09-27 2009-04-02 Seoul Opto Device Co., Ltd. Ac light emitting diode

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2890390B2 (ja) * 1994-07-06 1999-05-10 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3604205B2 (ja) * 1995-09-18 2004-12-22 日亜化学工業株式会社 窒化物半導体の成長方法
JP3448196B2 (ja) * 1997-07-25 2003-09-16 日亜化学工業株式会社 窒化物半導体発光素子
JP3496512B2 (ja) * 1997-06-30 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
JP3516434B2 (ja) * 1997-12-25 2004-04-05 昭和電工株式会社 化合物半導体発光素子
US7193246B1 (en) * 1998-03-12 2007-03-20 Nichia Corporation Nitride semiconductor device
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
WO2006054737A1 (en) * 2004-11-18 2006-05-26 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
TW200723559A (en) * 2005-12-13 2007-06-16 Ind Tech Res Inst Alternating current (AC) light emitting assembly and AC light emitting device
WO2006127030A1 (en) * 2005-05-20 2006-11-30 Cree, Inc. High efficacy white led
JP3972943B2 (ja) * 2005-07-19 2007-09-05 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
KR100968843B1 (ko) * 2005-12-16 2010-07-09 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
JP4936277B2 (ja) * 2006-07-13 2012-05-23 国立大学法人東京農工大学 アルミニウム系ｉｉｉ族窒化物結晶の製造方法
JP2008140893A (ja) * 2006-11-30 2008-06-19 Sumitomo Electric Ind Ltd 半導体デバイスおよびその製造方法
JP2009016467A (ja) * 2007-07-03 2009-01-22 Sony Corp 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置
JP5139005B2 (ja) * 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置
KR20100046195A (ko) * 2007-08-31 2010-05-06 라티스 파워(지앙시) 코포레이션 초고 역방향 항복 전압을 갖는 갈륨 니트라이드 발광 장치
JP2009200382A (ja) * 2008-02-25 2009-09-03 Panasonic Corp 半導体発光素子の製造方法
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW559899B (en) * 2001-05-28 2003-11-01 Showa Denko Kk Forming method for semiconductor layer and semiconductor element
US7479731B2 (en) * 2001-08-20 2009-01-20 Showa Denko K.K. Multicolor light-emitting lamp and light source
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
US20060055012A1 (en) * 2004-09-16 2006-03-16 Chen-Lun Hsin Chen LED package with zener diode protection circuit
TW200805704A (en) * 2005-09-07 2008-01-16 Showa Denko Kk Compound semiconductor device
US20090085048A1 (en) * 2007-09-27 2009-04-02 Seoul Opto Device Co., Ltd. Ac light emitting diode

Also Published As

Publication number Publication date
US20100308348A1 (en) 2010-12-09
DE102010029803B4 (de) 2021-01-28
JP2015097289A (ja) 2015-05-21
JP2010283354A (ja) 2010-12-16
US8304787B2 (en) 2012-11-06
TW201044631A (en) 2010-12-16
KR20100131948A (ko) 2010-12-16
KR101380799B1 (ko) 2014-04-04
DE102010029803A1 (de) 2011-09-29

Similar Documents

Publication Publication Date Title
JP5193048B2 (ja) 垂直に積層された発光ダイオードを有する発光素子
CN100377369C (zh) 氮化物半导体元件
US8294174B2 (en) Light-emitting device
TWI467801B (zh) 半導體發光元件之製造方法及半導體發光元件、燈、電子設備、機械裝置
US20150255673A1 (en) Nitride semiconductor light-emitting device and method for producing the same
JP2009071220A (ja) Ｉｉｉ族窒化物系化合物半導体発光素子
CN102097560A (zh) 具有复合式双电流扩展层的氮化物发光二极管
TWI398966B (zh) 發光元件及其製造方法
CN102931301A (zh) 氮化物半导体发光元件
CN110494992B (zh) 半导体器件以及包括该半导体器件的发光器件封装
US11870010B2 (en) Light-emitting diode
JP5229048B2 (ja) Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US11538962B2 (en) Light-emitting element and method for manufacturing light-emitting element
KR20090104454A (ko) 질화물 반도체 발광소자
JP2014078612A (ja) 半導体発光素子、発光装置
TWI496318B (zh) 發光元件及其製造方法
TWI478381B (zh) 發光元件及其製造方法
CN103311389A (zh) 发光二极管外延片及其制造方法
JP5948767B2 (ja) 窒化物半導体発光素子
JP3543809B2 (ja) 窒化物半導体素子
CN101930987B (zh) 发光元件及其制造方法
JP2014003121A (ja) 窒化物半導体発光素子
JP2004112002A (ja) 窒化物半導体素子
JP2020181976A (ja) 発光素子および発光素子の製造方法
JP2000012903A (ja) 窒化物半導体素子

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees