DE102010029803B4 - Lichtemittierende Vorrichtung - Google Patents

Lichtemittierende Vorrichtung Download PDF

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Publication number
DE102010029803B4
DE102010029803B4 DE102010029803.4A DE102010029803A DE102010029803B4 DE 102010029803 B4 DE102010029803 B4 DE 102010029803B4 DE 102010029803 A DE102010029803 A DE 102010029803A DE 102010029803 B4 DE102010029803 B4 DE 102010029803B4
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DE
Germany
Prior art keywords
layer
light
type semiconductor
light emitting
emitting
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102010029803.4A
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German (de)
English (en)
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DE102010029803A1 (de
Inventor
Chung-Ying Chang
Wen-Jia Huang
Chao-Hsu Lai
Tien-Kun Lin
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Epistar Corp
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Epistar Corp
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Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
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Application granted granted Critical
Publication of DE102010029803B4 publication Critical patent/DE102010029803B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
DE102010029803.4A 2009-06-08 2010-06-08 Lichtemittierende Vorrichtung Expired - Fee Related DE102010029803B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW098119155A TWI398966B (zh) 2009-06-08 2009-06-08 發光元件及其製造方法
TW098119155 2009-06-08

Publications (2)

Publication Number Publication Date
DE102010029803A1 DE102010029803A1 (de) 2011-09-29
DE102010029803B4 true DE102010029803B4 (de) 2021-01-28

Family

ID=43300111

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010029803.4A Expired - Fee Related DE102010029803B4 (de) 2009-06-08 2010-06-08 Lichtemittierende Vorrichtung

Country Status (5)

Country Link
US (1) US8304787B2 (enExample)
JP (2) JP2010283354A (enExample)
KR (1) KR101380799B1 (enExample)
DE (1) DE102010029803B4 (enExample)
TW (1) TWI398966B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法
JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
CN103811593B (zh) 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
CN103779374B (zh) * 2014-01-29 2019-01-15 佛山市南海区联合广东新光源产业创新中心 发光整流芯片
US10510800B2 (en) * 2016-02-09 2019-12-17 The Penn State Research Foundation Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication
US10879217B1 (en) * 2019-09-11 2020-12-29 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel

Citations (3)

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Publication number Priority date Publication date Assignee Title
CA2322490A1 (en) * 1998-03-12 1999-09-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US20070131942A1 (en) * 2005-12-13 2007-06-14 Industrial Technology Research Institute AC Light Emitting Assembly and AC Light Emitting Device
US20090008648A1 (en) * 2007-07-03 2009-01-08 Sony Corporation Gallium nitride-based semiconductor element, optical device using the same, and image display apparatus using optical device

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JP3604205B2 (ja) * 1995-09-18 2004-12-22 日亜化学工業株式会社 窒化物半導体の成長方法
JP3448196B2 (ja) * 1997-07-25 2003-09-16 日亜化学工業株式会社 窒化物半導体発光素子
JP3496512B2 (ja) * 1997-06-30 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
JP3516434B2 (ja) * 1997-12-25 2004-04-05 昭和電工株式会社 化合物半導体発光素子
JP4431290B2 (ja) * 2001-05-28 2010-03-10 昭和電工株式会社 半導体素子および半導体層
DE60224681T2 (de) * 2001-08-20 2009-01-08 Showa Denko K.K. Mehrfarben-lichtemissionslampe und lichtquelle
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
TWI239666B (en) * 2004-09-16 2005-09-11 Chen-Lun Hsingchen LED package with diode protection circuit
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
WO2006054737A1 (en) * 2004-11-18 2006-05-26 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
WO2006127030A1 (en) * 2005-05-20 2006-11-30 Cree, Inc. High efficacy white led
JP3972943B2 (ja) * 2005-07-19 2007-09-05 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
DE112006002403T5 (de) * 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
KR100968843B1 (ko) * 2005-12-16 2010-07-09 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
JP4936277B2 (ja) * 2006-07-13 2012-05-23 国立大学法人東京農工大学 アルミニウム系ｉｉｉ族窒化物結晶の製造方法
JP2008140893A (ja) * 2006-11-30 2008-06-19 Sumitomo Electric Ind Ltd 半導体デバイスおよびその製造方法
JP5139005B2 (ja) * 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置
KR20100046195A (ko) * 2007-08-31 2010-05-06 라티스 파워(지앙시) 코포레이션 초고 역방향 항복 전압을 갖는 갈륨 니트라이드 발광 장치
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
JP2009200382A (ja) * 2008-02-25 2009-09-03 Panasonic Corp 半導体発光素子の製造方法
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2322490A1 (en) * 1998-03-12 1999-09-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US20070131942A1 (en) * 2005-12-13 2007-06-14 Industrial Technology Research Institute AC Light Emitting Assembly and AC Light Emitting Device
US20090008648A1 (en) * 2007-07-03 2009-01-08 Sony Corporation Gallium nitride-based semiconductor element, optical device using the same, and image display apparatus using optical device

Also Published As

Publication number Publication date
US20100308348A1 (en) 2010-12-09
JP2015097289A (ja) 2015-05-21
TWI398966B (zh) 2013-06-11
JP2010283354A (ja) 2010-12-16
US8304787B2 (en) 2012-11-06
TW201044631A (en) 2010-12-16
KR20100131948A (ko) 2010-12-16
KR101380799B1 (ko) 2014-04-04
DE102010029803A1 (de) 2011-09-29

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