JP2010283354A - 発光ダイオード及びその製造方法 - Google Patents

発光ダイオード及びその製造方法 Download PDF

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Publication number
JP2010283354A
JP2010283354A JP2010129948A JP2010129948A JP2010283354A JP 2010283354 A JP2010283354 A JP 2010283354A JP 2010129948 A JP2010129948 A JP 2010129948A JP 2010129948 A JP2010129948 A JP 2010129948A JP 2010283354 A JP2010283354 A JP 2010283354A
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Japan
Prior art keywords
light emitting
layer
epitaxy
growth condition
type semiconductor
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English (en)
Japanese (ja)
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JP2010283354A5 (enExample
Inventor
Chung-Ying Chang
チャン チュン−イン
Wen-Jia Huang
フアン ウェン−ジア
Chao-Hsu Lai
ライ チャオ−シュウ
Tien Kun Lin
リン ティエン−カン
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Epistar Corp
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Epistar Corp
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Application filed by Epistar Corp filed Critical Epistar Corp
Publication of JP2010283354A publication Critical patent/JP2010283354A/ja
Publication of JP2010283354A5 publication Critical patent/JP2010283354A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
JP2010129948A 2009-06-08 2010-06-07 発光ダイオード及びその製造方法 Pending JP2010283354A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098119155A TWI398966B (zh) 2009-06-08 2009-06-08 發光元件及其製造方法

Related Child Applications (1)

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JP2015012090A Division JP2015097289A (ja) 2009-06-08 2015-01-26 発光ダイオード及びその製造方法

Publications (2)

Publication Number Publication Date
JP2010283354A true JP2010283354A (ja) 2010-12-16
JP2010283354A5 JP2010283354A5 (enExample) 2013-07-11

Family

ID=43300111

Family Applications (2)

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JP2010129948A Pending JP2010283354A (ja) 2009-06-08 2010-06-07 発光ダイオード及びその製造方法
JP2015012090A Pending JP2015097289A (ja) 2009-06-08 2015-01-26 発光ダイオード及びその製造方法

Family Applications After (1)

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JP2015012090A Pending JP2015097289A (ja) 2009-06-08 2015-01-26 発光ダイオード及びその製造方法

Country Status (5)

Country Link
US (1) US8304787B2 (enExample)
JP (2) JP2010283354A (enExample)
KR (1) KR101380799B1 (enExample)
DE (1) DE102010029803B4 (enExample)
TW (1) TWI398966B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
JP2017085137A (ja) * 2012-11-12 2017-05-18 晶元光▲電▼股▲ふん▼有限公司 半導体発光素子及びその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法
CN103779374B (zh) * 2014-01-29 2019-01-15 佛山市南海区联合广东新光源产业创新中心 发光整流芯片
US10510800B2 (en) * 2016-02-09 2019-12-17 The Penn State Research Foundation Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication
US10879217B1 (en) * 2019-09-11 2020-12-29 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008140893A (ja) * 2006-11-30 2008-06-19 Sumitomo Electric Ind Ltd 半導体デバイスおよびその製造方法
JP2009016467A (ja) * 2007-07-03 2009-01-22 Sony Corp 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置
JP2009519605A (ja) * 2005-12-16 2009-05-14 ソウル オプト デバイス カンパニー リミテッド 複数の発光セルが配列された発光素子

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2890390B2 (ja) * 1994-07-06 1999-05-10 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3604205B2 (ja) * 1995-09-18 2004-12-22 日亜化学工業株式会社 窒化物半導体の成長方法
JP3448196B2 (ja) * 1997-07-25 2003-09-16 日亜化学工業株式会社 窒化物半導体発光素子
JP3496512B2 (ja) * 1997-06-30 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
JP3516434B2 (ja) * 1997-12-25 2004-04-05 昭和電工株式会社 化合物半導体発光素子
US7193246B1 (en) * 1998-03-12 2007-03-20 Nichia Corporation Nitride semiconductor device
JP4431290B2 (ja) * 2001-05-28 2010-03-10 昭和電工株式会社 半導体素子および半導体層
DE60224681T2 (de) * 2001-08-20 2009-01-08 Showa Denko K.K. Mehrfarben-lichtemissionslampe und lichtquelle
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
TWI239666B (en) * 2004-09-16 2005-09-11 Chen-Lun Hsingchen LED package with diode protection circuit
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
WO2006054737A1 (en) * 2004-11-18 2006-05-26 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
TW200723559A (en) * 2005-12-13 2007-06-16 Ind Tech Res Inst Alternating current (AC) light emitting assembly and AC light emitting device
WO2006127030A1 (en) * 2005-05-20 2006-11-30 Cree, Inc. High efficacy white led
JP3972943B2 (ja) * 2005-07-19 2007-09-05 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
DE112006002403T5 (de) * 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
JP4936277B2 (ja) * 2006-07-13 2012-05-23 国立大学法人東京農工大学 アルミニウム系ｉｉｉ族窒化物結晶の製造方法
JP5139005B2 (ja) * 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置
KR20100046195A (ko) * 2007-08-31 2010-05-06 라티스 파워(지앙시) 코포레이션 초고 역방향 항복 전압을 갖는 갈륨 니트라이드 발광 장치
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
JP2009200382A (ja) * 2008-02-25 2009-09-03 Panasonic Corp 半導体発光素子の製造方法
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009519605A (ja) * 2005-12-16 2009-05-14 ソウル オプト デバイス カンパニー リミテッド 複数の発光セルが配列された発光素子
JP2008140893A (ja) * 2006-11-30 2008-06-19 Sumitomo Electric Ind Ltd 半導体デバイスおよびその製造方法
JP2009016467A (ja) * 2007-07-03 2009-01-22 Sony Corp 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
JP2017085137A (ja) * 2012-11-12 2017-05-18 晶元光▲電▼股▲ふん▼有限公司 半導体発光素子及びその製造方法
US10283669B2 (en) 2012-11-12 2019-05-07 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US10651335B2 (en) 2012-11-12 2020-05-12 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US11251328B2 (en) 2012-11-12 2022-02-15 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US11791436B2 (en) 2012-11-12 2023-10-17 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US12471412B2 (en) 2012-11-12 2025-11-11 Epistar Corporation Semiconductor light emitting device and method of fabricating the same

Also Published As

Publication number Publication date
US20100308348A1 (en) 2010-12-09
DE102010029803B4 (de) 2021-01-28
JP2015097289A (ja) 2015-05-21
TWI398966B (zh) 2013-06-11
US8304787B2 (en) 2012-11-06
TW201044631A (en) 2010-12-16
KR20100131948A (ko) 2010-12-16
KR101380799B1 (ko) 2014-04-04
DE102010029803A1 (de) 2011-09-29

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