JP2010283354A5 - - Google Patents

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Publication number
JP2010283354A5
JP2010283354A5 JP2010129948A JP2010129948A JP2010283354A5 JP 2010283354 A5 JP2010283354 A5 JP 2010283354A5 JP 2010129948 A JP2010129948 A JP 2010129948A JP 2010129948 A JP2010129948 A JP 2010129948A JP 2010283354 A5 JP2010283354 A5 JP 2010283354A5
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JP
Japan
Prior art keywords
light emitting
type semiconductor
semiconductor layer
layer
epitaxy structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010129948A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010283354A (ja
Filing date
Publication date
Priority claimed from TW098119155A external-priority patent/TWI398966B/zh
Application filed filed Critical
Publication of JP2010283354A publication Critical patent/JP2010283354A/ja
Publication of JP2010283354A5 publication Critical patent/JP2010283354A5/ja
Pending legal-status Critical Current

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JP2010129948A 2009-06-08 2010-06-07 発光ダイオード及びその製造方法 Pending JP2010283354A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098119155A TWI398966B (zh) 2009-06-08 2009-06-08 發光元件及其製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015012090A Division JP2015097289A (ja) 2009-06-08 2015-01-26 発光ダイオード及びその製造方法

Publications (2)

Publication Number Publication Date
JP2010283354A JP2010283354A (ja) 2010-12-16
JP2010283354A5 true JP2010283354A5 (enExample) 2013-07-11

Family

ID=43300111

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010129948A Pending JP2010283354A (ja) 2009-06-08 2010-06-07 発光ダイオード及びその製造方法
JP2015012090A Pending JP2015097289A (ja) 2009-06-08 2015-01-26 発光ダイオード及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015012090A Pending JP2015097289A (ja) 2009-06-08 2015-01-26 発光ダイオード及びその製造方法

Country Status (5)

Country Link
US (1) US8304787B2 (enExample)
JP (2) JP2010283354A (enExample)
KR (1) KR101380799B1 (enExample)
DE (1) DE102010029803B4 (enExample)
TW (1) TWI398966B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法
JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
CN103811593B (zh) 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
CN103779374B (zh) * 2014-01-29 2019-01-15 佛山市南海区联合广东新光源产业创新中心 发光整流芯片
US10510800B2 (en) * 2016-02-09 2019-12-17 The Penn State Research Foundation Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication
US10879217B1 (en) * 2019-09-11 2020-12-29 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel

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JP2890390B2 (ja) * 1994-07-06 1999-05-10 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
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JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
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JP4431290B2 (ja) * 2001-05-28 2010-03-10 昭和電工株式会社 半導体素子および半導体層
DE60224681T2 (de) * 2001-08-20 2009-01-08 Showa Denko K.K. Mehrfarben-lichtemissionslampe und lichtquelle
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
TWI239666B (en) * 2004-09-16 2005-09-11 Chen-Lun Hsingchen LED package with diode protection circuit
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
WO2006054737A1 (en) * 2004-11-18 2006-05-26 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
TW200723559A (en) * 2005-12-13 2007-06-16 Ind Tech Res Inst Alternating current (AC) light emitting assembly and AC light emitting device
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KR100968843B1 (ko) * 2005-12-16 2010-07-09 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
JP4936277B2 (ja) * 2006-07-13 2012-05-23 国立大学法人東京農工大学 アルミニウム系ｉｉｉ族窒化物結晶の製造方法
JP2008140893A (ja) * 2006-11-30 2008-06-19 Sumitomo Electric Ind Ltd 半導体デバイスおよびその製造方法
JP2009016467A (ja) * 2007-07-03 2009-01-22 Sony Corp 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置
JP5139005B2 (ja) * 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置
KR20100046195A (ko) * 2007-08-31 2010-05-06 라티스 파워(지앙시) 코포레이션 초고 역방향 항복 전압을 갖는 갈륨 니트라이드 발광 장치
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
JP2009200382A (ja) * 2008-02-25 2009-09-03 Panasonic Corp 半導体発光素子の製造方法
TWI398966B (zh) 2009-06-08 2013-06-11 晶元光電股份有限公司 發光元件及其製造方法

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