KR101349993B1 - ＮｉＳｉ 막의 형성 방법, 실리사이드막의 형성 방법, 실리사이드 어닐용 금속막의 형성 방법, 진공 처리 장치, 및 성막 장치 - Google Patents

ＮｉＳｉ 막의 형성 방법, 실리사이드막의 형성 방법, 실리사이드 어닐용 금속막의 형성 방법, 진공 처리 장치, 및 성막 장치 Download PDF

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KR101349993B1
KR101349993B1 KR1020120029778A KR20120029778A KR101349993B1 KR 101349993 B1 KR101349993 B1 KR 101349993B1 KR 1020120029778 A KR1020120029778 A KR 1020120029778A KR 20120029778 A KR20120029778 A KR 20120029778A KR 101349993 B1 KR101349993 B1 KR 101349993B1
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film
forming
gas
chamber
silicide
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KR20120109384A (ko
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야스시 히구치
도시미츠 우에히가시
가즈히로 소노다
하루노리 우시카와
나오키 하나다
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가부시키가이샤 알박
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020120029778A 2011-03-25 2012-03-23 ＮｉＳｉ 막의 형성 방법, 실리사이드막의 형성 방법, 실리사이드 어닐용 금속막의 형성 방법, 진공 처리 장치, 및 성막 장치 Active KR101349993B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-068514 2011-03-25
JP2011068514A JP5725454B2 (ja) 2011-03-25 2011-03-25 ＮｉＳｉ膜の形成方法、シリサイド膜の形成方法、シリサイドアニール用金属膜の形成方法、真空処理装置、及び成膜装置

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KR20120109384A KR20120109384A (ko) 2012-10-08
KR101349993B1 true KR101349993B1 (ko) 2014-01-13

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Cited By (2)

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WO2017070190A1 (en) * 2015-10-23 2017-04-27 Applied Materials, Inc. Bottom-up gap-fill by surface poisoning treatment
US10192775B2 (en) 2016-03-17 2019-01-29 Applied Materials, Inc. Methods for gapfill in high aspect ratio structures

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JP5826698B2 (ja) * 2011-04-13 2015-12-02 株式会社アルバック Ｎｉ膜の形成方法
US20140057399A1 (en) * 2012-08-24 2014-02-27 International Business Machines Corporation Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
JP5770806B2 (ja) * 2013-10-02 2015-08-26 田中貴金属工業株式会社 化学蒸着法によるＳｉ基板上へのニッケル薄膜、及び、Ｓｉ基板上へのＮｉシリサイド薄膜の製造方法
JP6039616B2 (ja) * 2014-08-11 2016-12-07 東京エレクトロン株式会社 グラフェンの下地膜の生成方法、グラフェンの生成方法及びグラフェンの下地膜生成装置
US9607842B1 (en) * 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
CN107845681B (zh) * 2016-09-21 2020-06-09 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法、电子装置
CN109778251B (zh) * 2019-03-29 2019-12-10 中国科学院上海应用物理研究所 一种复合涂层结构的制备方法以及由此得到的复合涂层结构
US11133178B2 (en) 2019-09-20 2021-09-28 Applied Materials, Inc. Seamless gapfill with dielectric ALD films

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KR20030073818A (ko) * 2002-03-13 2003-09-19 광주과학기술원 수소 이온 주입을 이용한 열적으로 안정한 ＮｉＳｉ의제조방법
JP2003328130A (ja) * 2002-05-16 2003-11-19 Tri Chemical Laboratory Inc 膜形成材料、膜形成方法、及び素子
US20100104896A1 (en) * 2008-10-29 2010-04-29 Motorola, Inc. Device and Method for Augmenting the Useful Life of an Energy Storage Device
US20100304561A1 (en) * 2006-10-30 2010-12-02 Tokyo Electron Limited Film forming method and substrate processing apparatus

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JPH11195619A (ja) * 1998-01-06 1999-07-21 Sony Corp 半導体装置の製造方法
JP2001203211A (ja) 2000-01-20 2001-07-27 Hitachi Kokusai Electric Inc 水素アニール処理方法及びその装置
US20090004850A1 (en) * 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP2007173743A (ja) * 2005-12-26 2007-07-05 Toshiba Corp 半導体装置の製造方法
JP2007214269A (ja) * 2006-02-08 2007-08-23 Sony Corp 金属シリサイド形成方法および半導体装置の製造方法
TW200746268A (en) * 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
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JP5513767B2 (ja) 2008-06-25 2014-06-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置
JP2011066060A (ja) * 2009-09-15 2011-03-31 Tokyo Electron Ltd 金属シリサイド膜の形成方法
JP5225957B2 (ja) * 2009-09-17 2013-07-03 東京エレクトロン株式会社 成膜方法および記憶媒体
JP4943536B2 (ja) * 2009-10-30 2012-05-30 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置

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KR20030073818A (ko) * 2002-03-13 2003-09-19 광주과학기술원 수소 이온 주입을 이용한 열적으로 안정한 ＮｉＳｉ의제조방법
JP2003328130A (ja) * 2002-05-16 2003-11-19 Tri Chemical Laboratory Inc 膜形成材料、膜形成方法、及び素子
US20100304561A1 (en) * 2006-10-30 2010-12-02 Tokyo Electron Limited Film forming method and substrate processing apparatus
US20100104896A1 (en) * 2008-10-29 2010-04-29 Motorola, Inc. Device and Method for Augmenting the Useful Life of an Energy Storage Device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017070190A1 (en) * 2015-10-23 2017-04-27 Applied Materials, Inc. Bottom-up gap-fill by surface poisoning treatment
US11028477B2 (en) 2015-10-23 2021-06-08 Applied Materials, Inc. Bottom-up gap-fill by surface poisoning treatment
US10192775B2 (en) 2016-03-17 2019-01-29 Applied Materials, Inc. Methods for gapfill in high aspect ratio structures
US10811303B2 (en) 2016-03-17 2020-10-20 Applied Materials, Inc. Methods for gapfill in high aspect ratio structures
US11488856B2 (en) 2016-03-17 2022-11-01 Applied Materials, Inc. Methods for gapfill in high aspect ratio structures

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KR20120109384A (ko) 2012-10-08
US8815737B2 (en) 2014-08-26
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JP5725454B2 (ja) 2015-05-27

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