KR101334046B1 - 설포늄염 개시제 - Google Patents

설포늄염 개시제 Download PDF

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Publication number
KR101334046B1
KR101334046B1 KR1020087002868A KR20087002868A KR101334046B1 KR 101334046 B1 KR101334046 B1 KR 101334046B1 KR 1020087002868 A KR1020087002868 A KR 1020087002868A KR 20087002868 A KR20087002868 A KR 20087002868A KR 101334046 B1 KR101334046 B1 KR 101334046B1
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South Korea
Prior art keywords
acid
alkyl
compound
phenyl
compounds
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English (en)
Korean (ko)
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KR20080030082A (ko
Inventor
장-피에르 볼프
아티라 라티카
쟝-뤽 비어바움
슈테판 일그
파스칼 하요
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시바 홀딩 인크
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
KR1020087002868A 2005-07-01 2006-06-21 설포늄염 개시제 Active KR101334046B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05105991 2005-07-01
EP05105991.3 2005-07-01
PCT/EP2006/063378 WO2007003507A1 (en) 2005-07-01 2006-06-21 Sulphonium salt initiators

Publications (2)

Publication Number Publication Date
KR20080030082A KR20080030082A (ko) 2008-04-03
KR101334046B1 true KR101334046B1 (ko) 2013-12-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087002868A Active KR101334046B1 (ko) 2005-07-01 2006-06-21 설포늄염 개시제

Country Status (9)

Country Link
US (1) US7901867B2 (enExample)
EP (1) EP1902019B1 (enExample)
JP (1) JP5081151B2 (enExample)
KR (1) KR101334046B1 (enExample)
CN (1) CN101213169A (enExample)
AT (1) ATE473209T1 (enExample)
DE (1) DE602006015319D1 (enExample)
TW (1) TW200710074A (enExample)
WO (1) WO2007003507A1 (enExample)

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JP4866606B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4695996B2 (ja) * 2006-02-27 2011-06-08 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
EP2125713B1 (en) 2006-10-04 2012-04-18 Basf Se Sulphonium salt photoinitiators
EP2186799B1 (en) * 2007-08-07 2015-07-08 Adeka Corporation Aromatic sulfonium salt compound
JP5570424B2 (ja) * 2007-10-10 2014-08-13 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
EP2197839B1 (en) * 2007-10-10 2013-01-02 Basf Se Sulphonium salt initiators
JP5473921B2 (ja) 2007-10-10 2014-04-16 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
CN102056913A (zh) * 2008-06-12 2011-05-11 巴斯夫欧洲公司 锍衍生物及其作为潜酸的用途
JP5385017B2 (ja) * 2008-07-11 2014-01-08 信越化学工業株式会社 レジストパターン形成方法及びフォトマスクの製造方法
US9005871B2 (en) 2008-10-20 2015-04-14 Basf Se Sulfonium derivatives and the use therof as latent acids
CA2748691A1 (en) * 2008-12-12 2010-06-17 Lutz Lehmann Triaryl-sulphonium compounds, kit and methods for labeling positron emitting isotopes
EP2199856B1 (en) 2008-12-18 2013-08-07 Agfa Graphics N.V. Cationic radiation curable compositions
JP5576139B2 (ja) * 2009-02-20 2014-08-20 サンアプロ株式会社 スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体
KR101700980B1 (ko) * 2009-02-20 2017-01-31 산아프로 가부시키가이샤 술포늄염, 광산 발생제 및 감광성 수지 조성물
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JP5543757B2 (ja) * 2009-11-11 2014-07-09 サンアプロ株式会社 スルホニウム塩，光酸発生剤，硬化性組成物及びポジ型フォトレジスト組成物
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Also Published As

Publication number Publication date
TW200710074A (en) 2007-03-16
EP1902019A1 (en) 2008-03-26
CN101213169A (zh) 2008-07-02
JP2009501148A (ja) 2009-01-15
DE602006015319D1 (de) 2010-08-19
WO2007003507A1 (en) 2007-01-11
KR20080030082A (ko) 2008-04-03
JP5081151B2 (ja) 2012-11-21
US20090208872A1 (en) 2009-08-20
EP1902019B1 (en) 2010-07-07
ATE473209T1 (de) 2010-07-15
US7901867B2 (en) 2011-03-08

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