JP5081151B2 - スルホニウム塩開始剤 - Google Patents

スルホニウム塩開始剤 Download PDF

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Publication number
JP5081151B2
JP5081151B2 JP2008518789A JP2008518789A JP5081151B2 JP 5081151 B2 JP5081151 B2 JP 5081151B2 JP 2008518789 A JP2008518789 A JP 2008518789A JP 2008518789 A JP2008518789 A JP 2008518789A JP 5081151 B2 JP5081151 B2 JP 5081151B2
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JP
Japan
Prior art keywords
alkyl
acid
group
compounds
phenyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2008518789A
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English (en)
Japanese (ja)
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JP2009501148A (ja
JP2009501148A5 (enExample
Inventor
ヴォルフ，ジャン−ピエール
ラティカ，アッティラ
ビルボーム，ジャン−リュク
イルク，シュテファン
ハヨ，パスカル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF Schweiz AG
Original Assignee
Ciba Holding AG
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Application filed by Ciba Holding AG filed Critical Ciba Holding AG
Publication of JP2009501148A publication Critical patent/JP2009501148A/ja
Publication of JP2009501148A5 publication Critical patent/JP2009501148A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
JP2008518789A 2005-07-01 2006-06-21 スルホニウム塩開始剤 Active JP5081151B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05105991 2005-07-01
EP05105991.3 2005-07-01
PCT/EP2006/063378 WO2007003507A1 (en) 2005-07-01 2006-06-21 Sulphonium salt initiators

Publications (3)

Publication Number Publication Date
JP2009501148A JP2009501148A (ja) 2009-01-15
JP2009501148A5 JP2009501148A5 (enExample) 2009-08-06
JP5081151B2 true JP5081151B2 (ja) 2012-11-21

Family

ID=35453417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518789A Active JP5081151B2 (ja) 2005-07-01 2006-06-21 スルホニウム塩開始剤

Country Status (9)

Country Link
US (1) US7901867B2 (enExample)
EP (1) EP1902019B1 (enExample)
JP (1) JP5081151B2 (enExample)
KR (1) KR101334046B1 (enExample)
CN (1) CN101213169A (enExample)
AT (1) ATE473209T1 (enExample)
DE (1) DE602006015319D1 (enExample)
TW (1) TW200710074A (enExample)
WO (1) WO2007003507A1 (enExample)

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JP4866606B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4695996B2 (ja) * 2006-02-27 2011-06-08 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US8012672B2 (en) 2006-10-04 2011-09-06 Basf Se Sulphonium salt photoinitiators
CN101778818B (zh) * 2007-08-07 2014-01-08 株式会社Adeka 芳香族硫鎓盐化合物
WO2009047105A1 (en) * 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
WO2009047151A1 (en) 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
CN102026967B (zh) * 2007-10-10 2013-09-18 巴斯夫欧洲公司 锍盐引发剂
EP2288599A1 (en) * 2008-06-12 2011-03-02 Basf Se Sulfonium derivatives and the use thereof as latent acids
JP5385017B2 (ja) * 2008-07-11 2014-01-08 信越化学工業株式会社 レジストパターン形成方法及びフォトマスクの製造方法
WO2010046240A1 (en) 2008-10-20 2010-04-29 Basf Se Sulfonium derivatives and the use therof as latent acids
US20120020881A1 (en) * 2008-12-12 2012-01-26 Bayer Schering Pharma Aktiengesellschaft Triaryl-sulphonium compounds, kit and methods for labeling positron emitting isotopes
EP2199856B1 (en) 2008-12-18 2013-08-07 Agfa Graphics N.V. Cationic radiation curable compositions
JP5576139B2 (ja) * 2009-02-20 2014-08-20 サンアプロ株式会社 スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体
KR101700980B1 (ko) * 2009-02-20 2017-01-31 산아프로 가부시키가이샤 술포늄염, 광산 발생제 및 감광성 수지 조성물
JP5448157B2 (ja) * 2009-03-13 2014-03-19 株式会社Ａｄｅｋａ 芳香族スルホニウム塩化合物
JP5491913B2 (ja) * 2009-03-18 2014-05-14 サンアプロ株式会社 化学増幅型ポジ型フォトレジスト組成物及びレジストパターンの製造方法
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Also Published As

Publication number Publication date
EP1902019A1 (en) 2008-03-26
DE602006015319D1 (de) 2010-08-19
KR20080030082A (ko) 2008-04-03
US7901867B2 (en) 2011-03-08
CN101213169A (zh) 2008-07-02
JP2009501148A (ja) 2009-01-15
ATE473209T1 (de) 2010-07-15
KR101334046B1 (ko) 2013-12-02
US20090208872A1 (en) 2009-08-20
TW200710074A (en) 2007-03-16
WO2007003507A1 (en) 2007-01-11
EP1902019B1 (en) 2010-07-07

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