KR101310476B1 - 석영 제품의 베이크 방법 및 석영 제품의 베이크 장치 - Google Patents
석영 제품의 베이크 방법 및 석영 제품의 베이크 장치 Download PDFInfo
- Publication number
- KR101310476B1 KR101310476B1 KR1020070061492A KR20070061492A KR101310476B1 KR 101310476 B1 KR101310476 B1 KR 101310476B1 KR 1020070061492 A KR1020070061492 A KR 1020070061492A KR 20070061492 A KR20070061492 A KR 20070061492A KR 101310476 B1 KR101310476 B1 KR 101310476B1
- Authority
- KR
- South Korea
- Prior art keywords
- baking
- jig
- element member
- quartz product
- gas
- Prior art date
Links
- 239000010453 quartz Substances 0.000 title claims abstract description 117
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 106
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 23
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000009257 reactivity Effects 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 230000002708 enhancing effect Effects 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 239000010949 copper Substances 0.000 description 10
- 238000010926 purge Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 240000006829 Ficus sundaica Species 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 2
- 229940005991 chloric acid Drugs 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- -1 steam Chemical compound 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001339 C alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OLSWFLMHTAXTNR-UHFFFAOYSA-N [C].[Ta].[Fe] Chemical compound [C].[Ta].[Fe] OLSWFLMHTAXTNR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Melting And Manufacturing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006174660A JP4369448B2 (ja) | 2006-06-23 | 2006-06-23 | 石英製品のベーク方法 |
JPJP-P-2006-00174660 | 2006-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070122159A KR20070122159A (ko) | 2007-12-28 |
KR101310476B1 true KR101310476B1 (ko) | 2013-09-24 |
Family
ID=38990745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070061492A KR101310476B1 (ko) | 2006-06-23 | 2007-06-22 | 석영 제품의 베이크 방법 및 석영 제품의 베이크 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7670138B2 (zh) |
JP (1) | JP4369448B2 (zh) |
KR (1) | KR101310476B1 (zh) |
CN (1) | CN101092276B (zh) |
TW (1) | TWI427723B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202007008520U1 (de) * | 2007-02-21 | 2008-07-03 | Dekema Dental-Keramiköfen GmbH | Brenngutträger |
JP5128874B2 (ja) * | 2007-08-16 | 2013-01-23 | 株式会社リコー | 縦型熱処理装置 |
DE202008002982U1 (de) * | 2008-03-03 | 2008-06-05 | Dekema Dental-Keramiköfen GmbH | Brenntisch für einen Ofen |
CN102432022B (zh) * | 2011-08-26 | 2013-03-13 | 田辉明 | 利用脉石英生产超纯石英砂的方法及高温氯化装置 |
US20170207078A1 (en) * | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition apparatus and semiconductor process |
JP6462161B2 (ja) * | 2016-02-09 | 2019-01-30 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990025802A (ko) * | 1997-09-18 | 1999-04-06 | 윤종용 | 확산설비의 튜브 고정용 도구 |
JP2002313787A (ja) | 2001-04-13 | 2002-10-25 | Tokyo Electron Ltd | 熱処理装置の石英製品の洗浄方法及び熱処理方法 |
KR100398042B1 (ko) | 2000-12-29 | 2003-09-19 | 주식회사 하이닉스반도체 | 단결정 실리콘 증착 장치 및 이 장치의 석영 튜브 클리닝방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5407349A (en) * | 1993-01-22 | 1995-04-18 | International Business Machines Corporation | Exhaust system for high temperature furnace |
US5445522A (en) * | 1993-04-26 | 1995-08-29 | Tokyo Electron Kabushiki Kaisha | Combustion device |
US5603875A (en) * | 1993-06-11 | 1997-02-18 | Aerospace Coating Systems, Inc. | Method for producing ceramic-based components |
JPH07254591A (ja) * | 1994-03-16 | 1995-10-03 | Toshiba Corp | 熱処理装置 |
US5741131A (en) * | 1996-01-31 | 1998-04-21 | International Business Machines Corporation | Stacking system for substrates |
JP3270730B2 (ja) * | 1997-03-21 | 2002-04-02 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
US6171982B1 (en) * | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
DE19821007A1 (de) * | 1998-05-11 | 1999-11-25 | Steag Rtp Systems Gmbh | Verfahren und Vorrichtung zum thermischen Behandeln von Substraten |
DE60028091T2 (de) * | 2000-02-07 | 2006-12-21 | Tokyo Electron Ltd. | Quarzglasbauteil für halbleiterherstellungsanlage und verfahren zur metalluntersuchung in einem quarzglasbauteil |
KR100783841B1 (ko) * | 2000-05-31 | 2007-12-10 | 동경 엘렉트론 주식회사 | 열처리 시스템 |
JP2002343789A (ja) * | 2001-05-16 | 2002-11-29 | Mitsubishi Electric Corp | 補助保温治具、その製造方法、板状断熱材付きウエハボート、縦型熱処理装置、縦型熱処理装置の改造方法および半導体装置の製造方法 |
JP3877157B2 (ja) * | 2002-09-24 | 2007-02-07 | 東京エレクトロン株式会社 | 基板処理装置 |
-
2006
- 2006-06-23 JP JP2006174660A patent/JP4369448B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-22 KR KR1020070061492A patent/KR101310476B1/ko not_active IP Right Cessation
- 2007-06-22 US US11/813,000 patent/US7670138B2/en not_active Expired - Fee Related
- 2007-06-23 TW TW096122749A patent/TWI427723B/zh not_active IP Right Cessation
- 2007-06-25 CN CN2007101126149A patent/CN101092276B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990025802A (ko) * | 1997-09-18 | 1999-04-06 | 윤종용 | 확산설비의 튜브 고정용 도구 |
KR100398042B1 (ko) | 2000-12-29 | 2003-09-19 | 주식회사 하이닉스반도체 | 단결정 실리콘 증착 장치 및 이 장치의 석영 튜브 클리닝방법 |
JP2002313787A (ja) | 2001-04-13 | 2002-10-25 | Tokyo Electron Ltd | 熱処理装置の石英製品の洗浄方法及び熱処理方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080044785A1 (en) | 2008-02-21 |
JP4369448B2 (ja) | 2009-11-18 |
KR20070122159A (ko) | 2007-12-28 |
CN101092276B (zh) | 2011-04-20 |
TW200818372A (en) | 2008-04-16 |
CN101092276A (zh) | 2007-12-26 |
JP2008004850A (ja) | 2008-01-10 |
US7670138B2 (en) | 2010-03-02 |
TWI427723B (zh) | 2014-02-21 |
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