KR101302426B1 - 화합물 물질 웨이퍼들 및 상응하는 화합물 물질 웨이퍼의 제조방법 - Google Patents

화합물 물질 웨이퍼들 및 상응하는 화합물 물질 웨이퍼의 제조방법 Download PDF

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KR101302426B1
KR101302426B1 KR1020097011182A KR20097011182A KR101302426B1 KR 101302426 B1 KR101302426 B1 KR 101302426B1 KR 1020097011182 A KR1020097011182 A KR 1020097011182A KR 20097011182 A KR20097011182 A KR 20097011182A KR 101302426 B1 KR101302426 B1 KR 101302426B1
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donor substrate
layer
compound material
substrate
insulating layer
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KR20090108689A (ko
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파트릭 레이노
올레그 코논척
미샤엘 스탱코
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소이텍
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/8305—Miscellaneous [e.g., treated surfaces, etc.]

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  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
KR1020097011182A 2007-01-24 2008-01-16 화합물 물질 웨이퍼들 및 상응하는 화합물 물질 웨이퍼의 제조방법 Active KR101302426B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20070290094 EP1950803B1 (en) 2007-01-24 2007-01-24 Method for manufacturing silicon on Insulator wafers and corresponding wafer
EP07290094.7 2007-01-24
PCT/IB2008/000131 WO2008090439A1 (en) 2007-01-24 2008-01-16 Method for manufacturing compound material wafers and corresponding compound material wafer

Publications (2)

Publication Number Publication Date
KR20090108689A KR20090108689A (ko) 2009-10-16
KR101302426B1 true KR101302426B1 (ko) 2013-09-10

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KR1020097011182A Active KR101302426B1 (ko) 2007-01-24 2008-01-16 화합물 물질 웨이퍼들 및 상응하는 화합물 물질 웨이퍼의 제조방법

Country Status (7)

Country Link
US (1) US7736994B2 (enExample)
EP (2) EP1950803B1 (enExample)
JP (1) JP4817342B2 (enExample)
KR (1) KR101302426B1 (enExample)
CN (1) CN101558487B (enExample)
AT (1) ATE518241T1 (enExample)
WO (1) WO2008090439A1 (enExample)

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US8017429B2 (en) 2008-02-19 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
WO2011072179A2 (en) 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers
EP2601687A4 (en) 2010-08-05 2018-03-07 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
FR2987166B1 (fr) 2012-02-16 2017-05-12 Soitec Silicon On Insulator Procede de transfert d'une couche
US9214353B2 (en) 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
FR2999801B1 (fr) 2012-12-14 2014-12-26 Soitec Silicon On Insulator Procede de fabrication d'une structure
US8946054B2 (en) 2013-04-19 2015-02-03 International Business Machines Corporation Crack control for substrate separation
FR3076069B1 (fr) * 2017-12-22 2021-11-26 Commissariat Energie Atomique Procede de transfert d'une couche utile
FR3076070B1 (fr) * 2017-12-22 2019-12-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile
DE102018221582A1 (de) 2018-12-13 2020-06-18 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe und Halbleiterscheibe
US11257902B2 (en) * 2020-05-28 2022-02-22 Taiwan Semiconductor Manufacturing Company Limited SOI device structure for robust isolation

Citations (2)

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Publication number Priority date Publication date Assignee Title
US5953622A (en) * 1996-11-23 1999-09-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor wafers
WO2005022610A1 (ja) * 2003-09-01 2005-03-10 Sumco Corporation 貼り合わせウェーハの製造方法

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JPH10114176A (ja) 1996-10-11 1998-05-06 Kunio Kuramochi 図示式野球スコアブック
JP3932369B2 (ja) 1998-04-09 2007-06-20 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JPH11307747A (ja) 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
JP3500063B2 (ja) 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JP3358550B2 (ja) * 1998-07-07 2002-12-24 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6544656B1 (en) * 1999-03-16 2003-04-08 Shin-Etsu Handotai Co., Ltd. Production method for silicon wafer and silicon wafer
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US6448152B1 (en) * 2001-02-20 2002-09-10 Silicon Genesis Corporation Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer
US6737337B1 (en) * 2001-04-27 2004-05-18 Advanced Micro Devices, Inc. Method of preventing dopant depletion in surface semiconductor layer of semiconductor-on-insulator (SOI) device
US20030029957A1 (en) 2001-08-13 2003-02-13 Smith Ronald D. System and method for manufacturing an ignition coil
JP2003068744A (ja) * 2001-08-30 2003-03-07 Shin Etsu Handotai Co Ltd シリコンウエーハの製造方法及びシリコンウエーハ並びにｓｏｉウエーハ
US7153757B2 (en) * 2002-08-29 2006-12-26 Analog Devices, Inc. Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure
JP2004247610A (ja) * 2003-02-14 2004-09-02 Canon Inc 基板の製造方法
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US20070117350A1 (en) * 2005-08-03 2007-05-24 Memc Electronic Materials, Inc. Strained silicon on insulator (ssoi) with layer transfer from oxidized donor

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US5953622A (en) * 1996-11-23 1999-09-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor wafers
WO2005022610A1 (ja) * 2003-09-01 2005-03-10 Sumco Corporation 貼り合わせウェーハの製造方法

Also Published As

Publication number Publication date
US7736994B2 (en) 2010-06-15
WO2008090439A1 (en) 2008-07-31
CN101558487B (zh) 2012-05-30
EP1950803A1 (en) 2008-07-30
JP4817342B2 (ja) 2011-11-16
EP1950803B1 (en) 2011-07-27
EP2264755A2 (en) 2010-12-22
CN101558487A (zh) 2009-10-14
ATE518241T1 (de) 2011-08-15
US20080176380A1 (en) 2008-07-24
JP2010517286A (ja) 2010-05-20
KR20090108689A (ko) 2009-10-16
EP2264755A3 (en) 2011-11-23

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