KR101222449B1 - 미세 패턴 형성방법 - Google Patents

미세 패턴 형성방법 Download PDF

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Publication number
KR101222449B1
KR101222449B1 KR1020077007462A KR20077007462A KR101222449B1 KR 101222449 B1 KR101222449 B1 KR 101222449B1 KR 1020077007462 A KR1020077007462 A KR 1020077007462A KR 20077007462 A KR20077007462 A KR 20077007462A KR 101222449 B1 KR101222449 B1 KR 101222449B1
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KR
South Korea
Prior art keywords
fine pattern
water
amine compound
pattern forming
coating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020077007462A
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English (en)
Korean (ko)
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KR20070054235A (ko
Inventor
기요히사 다카하시
유스케 다카노
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
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Publication of KR20070054235A publication Critical patent/KR20070054235A/ko
Application granted granted Critical
Publication of KR101222449B1 publication Critical patent/KR101222449B1/ko
Assigned to 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 reassignment 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020077007462A 2004-08-31 2005-08-31 미세 패턴 형성방법 Expired - Fee Related KR101222449B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00252123 2004-08-31
JP2004252123 2004-08-31
JP2005224050A JP4679997B2 (ja) 2004-08-31 2005-08-02 微細パターン形成方法
JPJP-P-2005-00224050 2005-08-02
PCT/JP2005/015883 WO2006025439A1 (ja) 2004-08-31 2005-08-31 微細パターン形成方法

Publications (2)

Publication Number Publication Date
KR20070054235A KR20070054235A (ko) 2007-05-28
KR101222449B1 true KR101222449B1 (ko) 2013-01-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077007462A Expired - Fee Related KR101222449B1 (ko) 2004-08-31 2005-08-31 미세 패턴 형성방법

Country Status (5)

Country Link
US (1) US7592132B2 (https=)
EP (1) EP1804125B1 (https=)
JP (1) JP4679997B2 (https=)
KR (1) KR101222449B1 (https=)
WO (1) WO2006025439A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7595141B2 (en) 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP5138916B2 (ja) * 2006-09-28 2013-02-06 東京応化工業株式会社 パターン形成方法
WO2008059440A2 (en) * 2006-11-14 2008-05-22 Nxp B.V. Double patterning for lithography to increase feature spatial density
JP5332107B2 (ja) * 2007-02-01 2013-11-06 ルネサスエレクトロニクス株式会社 レジストパターン形成方法および半導体装置の製造方法
US20100297851A1 (en) * 2009-05-19 2010-11-25 Rohm And Haas Electronic Materials Llc Compositions and methods for multiple exposure photolithography
JP6157151B2 (ja) * 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
CN103258794A (zh) * 2013-03-15 2013-08-21 上海华力微电子有限公司 防止光刻胶在湿法刻蚀中产生缺陷的工艺方法
JP2014219487A (ja) * 2013-05-02 2014-11-20 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法、現像液
JP2015125321A (ja) * 2013-12-26 2015-07-06 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、電子デバイス及び水系現像液
KR102235611B1 (ko) 2014-06-13 2021-04-02 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001019860A (ja) 1999-06-29 2001-01-23 Clariant Internatl Ltd 水溶性樹脂組成物
JP2002060641A (ja) 2000-08-16 2002-02-26 Shin Etsu Chem Co Ltd 微細パターン形成材料組成物
JP2003107752A (ja) 2001-09-28 2003-04-09 Tokyo Ohka Kogyo Co Ltd レジストパターンの微細化方法
JP2003316026A (ja) 2002-04-23 2003-11-06 Tokyo Ohka Kogyo Co Ltd 微細パターンの形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057879B2 (ja) 1992-02-28 2000-07-04 株式会社日立製作所 半導体装置の製造方法
JP3340493B2 (ja) 1993-02-26 2002-11-05 沖電気工業株式会社 パターン形成方法、位相シフト法用ホトマスクの形成方法
JP3071401B2 (ja) 1996-07-05 2000-07-31 三菱電機株式会社 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
JP3189773B2 (ja) * 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
US6291130B1 (en) * 1998-07-27 2001-09-18 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2001109165A (ja) 1999-10-05 2001-04-20 Clariant (Japan) Kk パターン形成方法
JP2002049161A (ja) * 2000-08-04 2002-02-15 Clariant (Japan) Kk 被覆層現像用界面活性剤水溶液
US20030008968A1 (en) * 2001-07-05 2003-01-09 Yoshiki Sugeta Method for reducing pattern dimension in photoresist layer
JP4237430B2 (ja) * 2001-09-13 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 エッチング方法及びエッチング保護層形成用組成物
US7189783B2 (en) * 2001-11-27 2007-03-13 Fujitsu Limited Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
JP3850767B2 (ja) * 2002-07-25 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP3850772B2 (ja) * 2002-08-21 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
CN1823304B (zh) * 2003-07-17 2010-12-22 Az电子材料（日本）株式会社 用于形成精细图形的材料和使用该材料形成精细图形的方法
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001019860A (ja) 1999-06-29 2001-01-23 Clariant Internatl Ltd 水溶性樹脂組成物
JP2002060641A (ja) 2000-08-16 2002-02-26 Shin Etsu Chem Co Ltd 微細パターン形成材料組成物
JP2003107752A (ja) 2001-09-28 2003-04-09 Tokyo Ohka Kogyo Co Ltd レジストパターンの微細化方法
JP2003316026A (ja) 2002-04-23 2003-11-06 Tokyo Ohka Kogyo Co Ltd 微細パターンの形成方法

Also Published As

Publication number Publication date
WO2006025439A1 (ja) 2006-03-09
US7592132B2 (en) 2009-09-22
EP1804125B1 (en) 2013-07-24
EP1804125A1 (en) 2007-07-04
US20070248770A1 (en) 2007-10-25
JP2006099059A (ja) 2006-04-13
JP4679997B2 (ja) 2011-05-11
EP1804125A4 (en) 2010-09-15
KR20070054235A (ko) 2007-05-28

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