KR20030076242A - 현상 결함 방지공정 및 재료 - Google Patents
현상 결함 방지공정 및 재료 Download PDFInfo
- Publication number
- KR20030076242A KR20030076242A KR1020027017719A KR20027017719A KR20030076242A KR 20030076242 A KR20030076242 A KR 20030076242A KR 1020027017719 A KR1020027017719 A KR 1020027017719A KR 20027017719 A KR20027017719 A KR 20027017719A KR 20030076242 A KR20030076242 A KR 20030076242A
- Authority
- KR
- South Korea
- Prior art keywords
- chemically amplified
- composition
- amplified photoresist
- photoresist film
- forming
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (5)
- 화학증폭형 포토레지스트 막을 8in 이상의 기판 위에 도포부착 형성하는 공정, 현상 결함 감소용 조성물을 화학증폭형 포토레지스트 막 위에 도포하는 공정, 화학증폭형 포토레지스트 막을 도포부착 형성하는 공정 및 현상 결함 감소용 조성물을 도포하는 공정 중의 적어도 어느 하나의 공정 후에 베이킹하는 공정, 화학증폭형 포토레지스트 막을 선택적으로 노광시키는 공정, 화학증폭형 포토레지스트 막을 노광후 베이킹하는 공정 및 화학증폭형 포토레지스트 막의 현상을 실시하는 공정을 포함하고, 현상 처리 후의 화학증폭형 포토레지스트 막 두께의 감소량을 현상 결함 감소용 조성물을 도포하지 않는 경우와 비교하여 추가로 10Å 내지 500Å 크게 함을 특징으로 하는, 레지스트 패턴의 형성방법.
- 제1항에 있어서, 현상 결함 감소용 조성물이 계면활성제를 함유하는 산성 조성물임을 특징으로 하는, 레지스트 패턴의 형성방법.
- 제2항에 있어서, 계면활성제가 C4내지 C15의 퍼플루오로알킬카복실산 및 이의 암모늄염, 테트라메틸암모늄염 또는 C1내지 C4의 알칸올아민염, C4내지 C10의 퍼플루오로알킬설폰산 및 이의 암모늄염, 테트라메틸암모늄염 또는 C1내지 C4의 알칸올아민염, 불소화 알킬 4급 암모늄 요오다이드, 퍼플루오로아디프산 및 이의 4급암모늄염으로 이루어진 그룹으로부터 선택된 하나 이상임을 특징으로 하는, 레지스트 패턴의 형성방법.
- 화학증폭형 포토레지스트 막을 8in 이상의 기판 위에 도포부착 형성하는 공정, 현상 결함 감소용 조성물을 화학증폭형 포토레지스트 막 위에 형성하는 공정, 화학증폭형 포토레지스트 막을 도포부착 형성하는 공정 및 현상 결함 감소용 조성물을 형성하는 공정 중의 적어도 어느 하나의 공정 후에 베이킹하는 공정, 화학증폭형 포토레지스트 막을 선택적으로 노광시키는 공정, 화학증폭형 포토레지스트 막을 노광후 베이킹하는 공정 및 화학증폭형 포토레지스트 막의 현상을 실시하는 공정을 포함하고, 현상 처리후의 화학증폭형 포토레지스트 막 두께의 감소량을 현상 결함 감소용 조성물을 도포하지 않는 경우와 비교하여 추가로 10Å 내지 500Å 크게 하는 레지스트 패턴의 형성방법에 사용되는, 계면활성제를 함유하는 산성 조성물로 이루어진 현상 결함 감소용 조성물.
- 제4항에 있어서, 계면활성제가 C4내지 C15의 퍼플루오로알킬카복실산 및 이의 암모늄염, 테트라메틸암모늄염 또는 C1내지 C4의 알칸올아민염, C4내지 C10의 퍼플루오로알킬설폰산 및 이의 암모늄염, 테트라메틸암모늄염 또는 C1내지 C4의 알칸올아민염, 불소화 알킬 4급 암모늄 요오다이드, 퍼플루오로아디프산 및 이의 4급 암모늄염으로 이루어진 그룹으로부터 선택된 하나 이상임을 특징으로 하는, 현상결함 감소용 조성물.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000191364A JP3320402B2 (ja) | 2000-06-26 | 2000-06-26 | 現像欠陥防止プロセス及び材料 |
JPJP-P-2000-00191364 | 2000-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030076242A true KR20030076242A (ko) | 2003-09-26 |
KR100770551B1 KR100770551B1 (ko) | 2007-10-26 |
Family
ID=18690674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027017719A KR100770551B1 (ko) | 2000-06-26 | 2001-06-14 | 현상 결함이 감소된 레지스트 패턴의 형성방법 및 이를 위한 현상 결함 감소용 조성물 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7195863B2 (ko) |
EP (1) | EP1306726A4 (ko) |
JP (1) | JP3320402B2 (ko) |
KR (1) | KR100770551B1 (ko) |
CN (1) | CN1210626C (ko) |
MY (1) | MY131861A (ko) |
TW (1) | TWI221542B (ko) |
WO (1) | WO2002001299A1 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6955485B2 (en) * | 2002-03-01 | 2005-10-18 | Tokyo Electron Limited | Developing method and developing unit |
JP3914468B2 (ja) * | 2002-06-21 | 2007-05-16 | Azエレクトロニックマテリアルズ株式会社 | 現像欠陥防止プロセスおよびそれに用いる組成物 |
US7799514B1 (en) * | 2004-10-01 | 2010-09-21 | Globalfoundries Inc | Surface treatment with an acidic composition to prevent substrate and environmental contamination |
DE102005000858A1 (de) * | 2005-01-05 | 2006-07-20 | Merck Patent Gmbh | Fluortenside |
DE102006051766A1 (de) * | 2006-11-02 | 2008-05-08 | Qimonda Ag | Verfahren zum Strukturieren eines Fotolacks |
JP4968026B2 (ja) * | 2007-11-30 | 2012-07-04 | Jsr株式会社 | パターン形成方法 |
JP5324290B2 (ja) * | 2008-04-03 | 2013-10-23 | 東京応化工業株式会社 | 反射防止膜形成材料、およびこれを用いたレジストパターン形成方法 |
JP5222111B2 (ja) * | 2008-11-26 | 2013-06-26 | 東京応化工業株式会社 | レジスト表面改質液及びこれを利用したレジストパターン形成方法 |
KR101585996B1 (ko) | 2009-04-20 | 2016-01-18 | 삼성전자주식회사 | 포토레지스트 조성물, 이를 이용한 미세 패턴의 형성방법 및 반도체 장치의 제조방법 |
CN102486618A (zh) * | 2010-12-02 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | 无抗水表面涂层的浸没式光刻胶的显影方法 |
CN102169292B (zh) * | 2011-03-17 | 2016-09-28 | 上海集成电路研发中心有限公司 | 光刻胶的涂布方法 |
JP5965733B2 (ja) * | 2012-06-12 | 2016-08-10 | 富士フイルム株式会社 | パターン形成方法、及び、電子デバイスの製造方法 |
SG11201504607QA (en) | 2012-12-14 | 2015-07-30 | Basf Se | Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
TWI558850B (zh) * | 2014-03-29 | 2016-11-21 | 精密聚合物股份有限公司 | 電子零件用處理液及電子零件之製造方法 |
TWI559082B (zh) | 2014-07-07 | 2016-11-21 | 財團法人工業技術研究院 | 生質材料與其形成方法與印刷電路板 |
CN107357140B (zh) * | 2017-09-14 | 2021-05-04 | 江阴江化微电子材料股份有限公司 | 一种正性光刻胶用显影液及其应用 |
CN112305860A (zh) * | 2019-08-02 | 2021-02-02 | 东莞新科技术研究开发有限公司 | 一种用于半导体的曝光显影方法 |
CN113564528B (zh) * | 2021-06-18 | 2022-06-10 | 复旦大学 | 一种光控可逆疏水件及其制备方法 |
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JP2643056B2 (ja) | 1991-06-28 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表面反射防止コーティング形成組成物及びその使用 |
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-
2000
- 2000-06-26 JP JP2000191364A patent/JP3320402B2/ja not_active Expired - Fee Related
-
2001
- 2001-05-22 TW TW090112204A patent/TWI221542B/zh not_active IP Right Cessation
- 2001-06-13 MY MYPI20012748A patent/MY131861A/en unknown
- 2001-06-14 US US10/311,787 patent/US7195863B2/en not_active Expired - Lifetime
- 2001-06-14 EP EP01938668A patent/EP1306726A4/en not_active Ceased
- 2001-06-14 WO PCT/JP2001/005072 patent/WO2002001299A1/ja active Application Filing
- 2001-06-14 KR KR1020027017719A patent/KR100770551B1/ko not_active IP Right Cessation
- 2001-06-14 CN CNB018116612A patent/CN1210626C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7195863B2 (en) | 2007-03-27 |
MY131861A (en) | 2007-09-28 |
EP1306726A4 (en) | 2007-04-04 |
TWI221542B (en) | 2004-10-01 |
EP1306726A1 (en) | 2003-05-02 |
CN1439119A (zh) | 2003-08-27 |
US20030180667A1 (en) | 2003-09-25 |
WO2002001299A1 (fr) | 2002-01-03 |
JP2002006514A (ja) | 2002-01-09 |
KR100770551B1 (ko) | 2007-10-26 |
JP3320402B2 (ja) | 2002-09-03 |
CN1210626C (zh) | 2005-07-13 |
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