CN1439119A - 防止显影缺陷的方法和材料 - Google Patents
防止显影缺陷的方法和材料 Download PDFInfo
- Publication number
- CN1439119A CN1439119A CN01811661A CN01811661A CN1439119A CN 1439119 A CN1439119 A CN 1439119A CN 01811661 A CN01811661 A CN 01811661A CN 01811661 A CN01811661 A CN 01811661A CN 1439119 A CN1439119 A CN 1439119A
- Authority
- CN
- China
- Prior art keywords
- composition
- strengthens
- coating
- photoresist layer
- chemistry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007547 defect Effects 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000000463 material Substances 0.000 title claims description 10
- 238000011161 development Methods 0.000 title abstract description 20
- 230000008569 process Effects 0.000 title abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 69
- 239000000203 mixture Substances 0.000 claims abstract description 64
- 238000000576 coating method Methods 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 56
- 239000004094 surface-active agent Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 230000009467 reduction Effects 0.000 claims abstract description 8
- 230000001965 increasing effect Effects 0.000 claims abstract description 6
- 230000002378 acidificating effect Effects 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims description 24
- -1 Perfluoro Chemical group 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 17
- 150000003863 ammonium salts Chemical class 0.000 claims description 11
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 9
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- ABDBNWQRPYOPDF-UHFFFAOYSA-N carbonofluoridic acid Chemical compound OC(F)=O ABDBNWQRPYOPDF-UHFFFAOYSA-N 0.000 claims description 4
- 229940107816 ammonium iodide Drugs 0.000 claims description 3
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 3
- 239000002253 acid Substances 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000018109 developmental process Effects 0.000 description 15
- 239000000243 solution Substances 0.000 description 13
- 229920002554 vinyl polymer Polymers 0.000 description 12
- 206010070834 Sensitisation Diseases 0.000 description 11
- 230000008313 sensitization Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 150000007524 organic acids Chemical class 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000002708 enhancing effect Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 6
- 235000013351 cheese Nutrition 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000007516 brønsted-lowry acids Chemical class 0.000 description 3
- 150000007528 brønsted-lowry bases Chemical class 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002671 adjuvant Substances 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- XGJZQNMUVTZITK-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexamethoxy-1,3,5-triazine-2,4,6-triamine Chemical compound CON(OC)C1=NC(N(OC)OC)=NC(N(OC)OC)=N1 XGJZQNMUVTZITK-UHFFFAOYSA-N 0.000 description 1
- OAFVIANHONRIRR-UHFFFAOYSA-N 3-aminopentadecane-1-sulfonic acid Chemical compound CCCCCCCCCCCCC(N)CCS(O)(=O)=O OAFVIANHONRIRR-UHFFFAOYSA-N 0.000 description 1
- KBFJHOCTSIMQKL-UHFFFAOYSA-N 3-methoxycarbonylbut-3-enoic acid Chemical class COC(=O)C(=C)CC(O)=O KBFJHOCTSIMQKL-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- PHDAADUELLBUCA-UHFFFAOYSA-N OOO.C[N+](C)(C)C Chemical compound OOO.C[N+](C)(C)C PHDAADUELLBUCA-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- ZUQAPLKKNAQJAU-UHFFFAOYSA-N acetylenediol Chemical compound OC#CO ZUQAPLKKNAQJAU-UHFFFAOYSA-N 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- YXOGSLZKOVPUMH-UHFFFAOYSA-N ethene;phenol Chemical class C=C.OC1=CC=CC=C1 YXOGSLZKOVPUMH-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical class OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Substances [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
使用用于减少显影缺陷的组合物(显影∶软片) | ||||||||
显影前抗蚀剂涂层的厚度(nm) | 显影后抗蚀剂涂层的厚度(nm) | 抗蚀剂涂层厚度减少的量(nm) | 1∶1 | 1∶3 | 1∶5 | |||
正确的曝光量(mJ/cm2) | 观察到的图形 | 正确的曝光量(mJ/cm2) | 观察到的图形 | 正确的曝光量(mJ/cm2) | 观察到的图形 | |||
669 | 603 | 66 | 14 | 没有问题 | 18 | 没有问题 | 19 | 没有问题 |
682 | 618 | 64 | 13 | 没有问题 | 18 | 没有问题 | 18.5 | 没有问题 |
688 | 622 | 66 | 13 | 没有问题 | 18 | 没有问题 | 19 | 没有问题 |
698 | 632 | 66 | 12.5 | 没有问题 | 18 | 没有问题 | 19 | 没有问题 |
705 | 639 | 66 | 12.5 | 没有问题 | 18.5 | 没有问题 | 19.5 | 没有问题 |
716 | 649 | 67 | 12.5 | 没有问题 | 19.5 | 没有问题 | 20 | 没有问题 |
730 | 662 | 68 | 13.5 | 没有问题 | 19.5 | 没有问题 | 20 | 没有问题 |
740 | 671 | 68 | 14 | 没有问题 | 19 | 没有问题 | 20 | 没有问题 |
750 | 682 | 68 | 14 | 没有问题 | 19 | 没有问题 | 20 | 没有问题 |
760 | 691 | 69 | 13 | 没有问题 | 19 | 没有问题 | 19.5 | 没有问题 |
772 | 702 | 71 | 12.5 | 没有问题 | 18.5 | 没有问题 | 20 | 没有问题 |
783 | 711 | 72 | 13 | 没有问题 | 18.5 | 没有问题 | 21.5 | 没有问题 |
794 | 722 | 73 | 13.5 | 没有问题 | 19 | 没有问题 | 21.5 | 没有问题 |
807 | 736 | 72 | 14.5 | 没有问题 | 19.5 | 没有问题 | 21.5 | 没有问题 |
没有使用用于减少显影缺陷的组合物(显影∶软片) | ||||||||
显影前抗蚀剂涂层的厚度(nm) | 显影后抗蚀剂涂层的厚度(nm) | 抗蚀剂涂层厚度减少的量(nm) | 1∶1 | 1∶3 | 1∶5 | |||
正确的曝光量(mJ/cm2) | 观察到的图形 | 正确的曝光量(mJ/cm2) | 观察到的图形 | 正确的曝光量(mJ/cm2) | 观察到的图形 | |||
674 | 632 | 42 | 12 | 没有问题 | 18.5 | 没有问题 | 21 | 没有问题 |
681 | 641 | 40 | 14.5 | 没有问题 | 21 | 没有问题 | 23.5 | 没有问题 |
692 | 649 | 43 | 17 | 没有问题 | 24 | 没有问题 | 25.5 | 没有问题 |
701 | 658 | 44 | 18 | 没有问题 | 23.5 | 没有问题 | 26 | 没有问题 |
711 | 667 | 44 | 17 | 观察到开孔失败 | 22.5 | 观察到开孔失败 | 23.5 | 观察到开孔失败 |
716 | 670 | 46 | 16.5 | 观察到开孔失败 | 20.5 | 观察到开孔失败 | 21 | 观察到开孔失败 |
728 | 683 | 45 | 12.5 | 观察到开孔失败 | 18 | 观察到开孔失败 | 19.5 | 观察到开孔失败 |
739 | 694 | 45 | 12 | 没有问题 | 20.5 | 没有问题 | 21 | 没有问题 |
749 | 703 | 46 | 14 | 没有问题 | 21 | 没有问题 | 23 | 没有问题 |
759 | 714 | 46 | 16.5 | 没有问题 | 23 | 没有问题 | 25.5 | 没有问题 |
771 | 725 | 46 | 18.5 | 没有问题 | 25 | 没有问题 | 26.5 | 没有问题 |
782 | 736 | 46 | 17.5 | 观察到开孔失败 | 22.5 | 观察到开孔失败 | 25 | 观察到开孔失败 |
793 | 747 | 47 | 14.5 | 观察到开孔失败 | 20.5 | 观察到开孔失败 | 21.5 | 观察到开孔失败 |
806 | 759 | 47 | 12.5 | 没有问题 | 20 | 没有问题 | 20 | 没有问题 |
没有使用用于减少显影缺陷的组合物(显影∶喷雾) | ||||||||
显影前抗蚀剂涂层的厚度(nm) | 显影后抗蚀剂涂层的厚度(nm) | 抗蚀剂涂层厚度减少的量(nm) | 1∶1 | 1∶3 | 1∶5 | |||
正确的曝光量(mJ/cm2) | 观察到的图形 | 正确的曝光量(mJ/cm2) | 观察到的图形 | 正确的曝光量(mJ/cm2) | 观察到的图形 | |||
667 | 632 | 35 | 11 | 没有问题 | 17.5 | 没有问题 | 19.5 | 没有问题 |
678 | 641 | 37 | 13 | 没有问题 | 20 | 没有问题 | 22 | 没有问题 |
684 | 649 | 35 | 15.5 | 没有问题 | 21.5 | 没有问题 | 23 | 没有问题 |
697 | 658 | 40 | 18 | 没有问题 | 24 | 没有问题 | 25.5 | 没有问题 |
708 | 667 | 41 | 17 | 没有问题 | 22 | 没有问题 | 23.5 | 没有问题 |
720 | 670 | 50 | 14 | 没有问题 | 19.5 | 观察到开孔失败 | 20 | 观察到开孔失败 |
731 | 683 | 98 | 12 | 没有问题 | 18.5 | 没有问题 | 20 | 没有问题 |
741 | 694 | 48 | 12 | 没有问题 | 19.5 | 没有问题 | 21 | 没有问题 |
752 | 703 | 49 | 14.5 | 没有问题 | 21 | 没有问题 | 22.5 | 没有问题 |
763 | 714 | 49 | 17 | 没有问题 | 22.5 | 没有问题 | 25 | 没有问题 |
771 | 725 | 46 | 18 | 没有问题 | 24 | 没有问题 | 26.5 | 没有问题 |
782 | 736 | 46 | 17 | 没有问题 | 22 | 观察到开孔失败 | 24 | 没有问题 |
794 | 747 | 47 | 14 | 观察到开孔失败 | 19.5 | 观察到开孔失败 | 20.5 | 观察到开孔失败 |
807 | 759 | 49 | 12 | 没有问题 | 19.5 | 没有问题 | 21 | 没有问题 |
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP191364/2000 | 2000-06-26 | ||
JP2000191364A JP3320402B2 (ja) | 2000-06-26 | 2000-06-26 | 現像欠陥防止プロセス及び材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1439119A true CN1439119A (zh) | 2003-08-27 |
CN1210626C CN1210626C (zh) | 2005-07-13 |
Family
ID=18690674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018116612A Expired - Fee Related CN1210626C (zh) | 2000-06-26 | 2001-06-14 | 防止显影缺陷的方法和材料 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7195863B2 (zh) |
EP (1) | EP1306726A4 (zh) |
JP (1) | JP3320402B2 (zh) |
KR (1) | KR100770551B1 (zh) |
CN (1) | CN1210626C (zh) |
MY (1) | MY131861A (zh) |
TW (1) | TWI221542B (zh) |
WO (1) | WO2002001299A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169292A (zh) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | 光刻胶的涂布方法 |
CN104364716A (zh) * | 2012-06-12 | 2015-02-18 | 富士胶片株式会社 | 图案形成方法,在其中使用的组合物,用于制造电子器件的方法以及电子器件 |
CN107357140A (zh) * | 2017-09-14 | 2017-11-17 | 江阴江化微电子材料股份有限公司 | 一种正性光刻胶用显影液及其制备方法和应用 |
CN112305860A (zh) * | 2019-08-02 | 2021-02-02 | 东莞新科技术研究开发有限公司 | 一种用于半导体的曝光显影方法 |
CN113564528A (zh) * | 2021-06-18 | 2021-10-29 | 复旦大学 | 一种光控可逆疏水件及其制备方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6955485B2 (en) * | 2002-03-01 | 2005-10-18 | Tokyo Electron Limited | Developing method and developing unit |
JP3914468B2 (ja) * | 2002-06-21 | 2007-05-16 | Azエレクトロニックマテリアルズ株式会社 | 現像欠陥防止プロセスおよびそれに用いる組成物 |
US7799514B1 (en) * | 2004-10-01 | 2010-09-21 | Globalfoundries Inc | Surface treatment with an acidic composition to prevent substrate and environmental contamination |
DE102005000858A1 (de) * | 2005-01-05 | 2006-07-20 | Merck Patent Gmbh | Fluortenside |
DE102006051766A1 (de) * | 2006-11-02 | 2008-05-08 | Qimonda Ag | Verfahren zum Strukturieren eines Fotolacks |
JP4968026B2 (ja) * | 2007-11-30 | 2012-07-04 | Jsr株式会社 | パターン形成方法 |
JP5324290B2 (ja) * | 2008-04-03 | 2013-10-23 | 東京応化工業株式会社 | 反射防止膜形成材料、およびこれを用いたレジストパターン形成方法 |
JP5222111B2 (ja) * | 2008-11-26 | 2013-06-26 | 東京応化工業株式会社 | レジスト表面改質液及びこれを利用したレジストパターン形成方法 |
KR101585996B1 (ko) | 2009-04-20 | 2016-01-18 | 삼성전자주식회사 | 포토레지스트 조성물, 이를 이용한 미세 패턴의 형성방법 및 반도체 장치의 제조방법 |
CN102486618A (zh) * | 2010-12-02 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | 无抗水表面涂层的浸没式光刻胶的显影方法 |
JP6246830B2 (ja) | 2012-12-14 | 2017-12-13 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 50nm以下のライン間寸法を有するパターン化材料を処理する際におけるアンチパターン崩壊を回避するための、界面活性剤及び疎水剤を含む組成物の使用 |
TWI558850B (zh) * | 2014-03-29 | 2016-11-21 | 精密聚合物股份有限公司 | 電子零件用處理液及電子零件之製造方法 |
TWI559082B (zh) | 2014-07-07 | 2016-11-21 | 財團法人工業技術研究院 | 生質材料與其形成方法與印刷電路板 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6232453A (ja) * | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
SG43691A1 (en) | 1991-06-28 | 1997-11-14 | Ibm | Top antireflective coating films |
JPH05326389A (ja) | 1992-05-20 | 1993-12-10 | Fujitsu Ltd | レジストパターンの形成方法 |
JP3192505B2 (ja) * | 1992-11-13 | 2001-07-30 | 東京応化工業株式会社 | 半導体素子製造用パターン形成方法 |
JP2944857B2 (ja) * | 1993-06-25 | 1999-09-06 | 日本電信電話株式会社 | オーバーコート材料 |
JP2803549B2 (ja) * | 1993-12-21 | 1998-09-24 | 信越化学工業株式会社 | 光反射性防止材料及びパターン形成方法 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
JP2878150B2 (ja) | 1994-04-27 | 1999-04-05 | 東京応化工業株式会社 | レジスト用塗布液およびこれを用いたレジスト材料 |
JPH07311467A (ja) * | 1994-05-18 | 1995-11-28 | Hitachi Ltd | 水溶性組成物、それを用いたパタン形成方法及び半導体装置の製造方法 |
JP2985688B2 (ja) * | 1994-09-21 | 1999-12-06 | 信越化学工業株式会社 | 水溶性膜材料及びパターン形成方法 |
US5611850A (en) * | 1995-03-23 | 1997-03-18 | Mitsubishi Chemical Corporation | Composition for anti-reflective coating on resist |
JP3336838B2 (ja) * | 1995-08-22 | 2002-10-21 | 富士ゼロックス株式会社 | 静電荷像現像用トナー、静電荷像現像剤および画像形成方法 |
JP3694703B2 (ja) * | 1996-04-25 | 2005-09-14 | Azエレクトロニックマテリアルズ株式会社 | 反射防止コーティング用組成物 |
JPH09325500A (ja) * | 1996-06-07 | 1997-12-16 | Mitsubishi Chem Corp | 表面反射防止塗布組成物及びパターン形成方法 |
JP3673399B2 (ja) * | 1998-06-03 | 2005-07-20 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
JP3967466B2 (ja) | 1998-06-19 | 2007-08-29 | 信越化学工業株式会社 | 反射防止膜材料 |
JP2000275835A (ja) * | 1999-03-25 | 2000-10-06 | Mitsubishi Chemicals Corp | パターン形成方法 |
JP2001023893A (ja) * | 1999-07-12 | 2001-01-26 | Nec Corp | フォトレジストパターンの形成方法 |
JP3801398B2 (ja) | 1999-11-01 | 2006-07-26 | 信越化学工業株式会社 | 反射防止膜材料及びパターン形成方法 |
JP2001215734A (ja) * | 2000-02-04 | 2001-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液 |
JP3793920B2 (ja) * | 2002-07-23 | 2006-07-05 | 株式会社リコー | 電子写真用トナーの製造方法、このトナーを用いた現像剤、現像方法、転写方法及びプロセスカートリッジ |
US7358032B2 (en) * | 2002-11-08 | 2008-04-15 | Fujifilm Corporation | Planographic printing plate precursor |
-
2000
- 2000-06-26 JP JP2000191364A patent/JP3320402B2/ja not_active Expired - Fee Related
-
2001
- 2001-05-22 TW TW090112204A patent/TWI221542B/zh not_active IP Right Cessation
- 2001-06-13 MY MYPI20012748A patent/MY131861A/en unknown
- 2001-06-14 CN CNB018116612A patent/CN1210626C/zh not_active Expired - Fee Related
- 2001-06-14 KR KR1020027017719A patent/KR100770551B1/ko not_active IP Right Cessation
- 2001-06-14 US US10/311,787 patent/US7195863B2/en not_active Expired - Lifetime
- 2001-06-14 EP EP01938668A patent/EP1306726A4/en not_active Ceased
- 2001-06-14 WO PCT/JP2001/005072 patent/WO2002001299A1/ja active Application Filing
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169292A (zh) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | 光刻胶的涂布方法 |
CN102169292B (zh) * | 2011-03-17 | 2016-09-28 | 上海集成电路研发中心有限公司 | 光刻胶的涂布方法 |
CN104364716A (zh) * | 2012-06-12 | 2015-02-18 | 富士胶片株式会社 | 图案形成方法,在其中使用的组合物,用于制造电子器件的方法以及电子器件 |
CN107357140A (zh) * | 2017-09-14 | 2017-11-17 | 江阴江化微电子材料股份有限公司 | 一种正性光刻胶用显影液及其制备方法和应用 |
CN112305860A (zh) * | 2019-08-02 | 2021-02-02 | 东莞新科技术研究开发有限公司 | 一种用于半导体的曝光显影方法 |
CN113564528A (zh) * | 2021-06-18 | 2021-10-29 | 复旦大学 | 一种光控可逆疏水件及其制备方法 |
CN113564528B (zh) * | 2021-06-18 | 2022-06-10 | 复旦大学 | 一种光控可逆疏水件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1306726A4 (en) | 2007-04-04 |
JP3320402B2 (ja) | 2002-09-03 |
JP2002006514A (ja) | 2002-01-09 |
MY131861A (en) | 2007-09-28 |
US20030180667A1 (en) | 2003-09-25 |
TWI221542B (en) | 2004-10-01 |
KR100770551B1 (ko) | 2007-10-26 |
EP1306726A1 (en) | 2003-05-02 |
CN1210626C (zh) | 2005-07-13 |
WO2002001299A1 (fr) | 2002-01-03 |
US7195863B2 (en) | 2007-03-27 |
KR20030076242A (ko) | 2003-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1210626C (zh) | 防止显影缺陷的方法和材料 | |
KR100958689B1 (ko) | 계면활성제를 함유하는 공정액 | |
US20070010412A1 (en) | Process solutions containing surfactants | |
JP2001019860A (ja) | 水溶性樹脂組成物 | |
CN1223908C (zh) | 形成图形的方法和在其中使用的处理剂 | |
JP5306755B2 (ja) | 基板処理液およびそれを用いたレジスト基板処理方法 | |
JP2005157259A (ja) | レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法 | |
TW201807513A (zh) | 間隙塡充組成物及使用低分子化合物之圖案形成方法 | |
JPH0815859A (ja) | レジスト用塗布液およびこれを用いたレジスト材料 | |
US20100324330A1 (en) | Process for Preventing Development Defect and Composition for Use in the Same | |
JP2004505319A (ja) | 微細電子デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS (JAPAN) K.K. Effective date: 20120523 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120523 Address after: Tokyo, Japan, Japan Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan, Japan Patentee before: AZ electronic materials (Japan) Co., Ltd. Effective date of registration: 20120523 Address after: Tokyo, Japan, Japan Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan, Japan Patentee before: AZ electronic materials (Japan) Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150407 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150407 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan, Japan Patentee before: AZ Electronic Materials (Japan) K. K. Effective date of registration: 20150407 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan, Japan Patentee before: AZ Electronic Materials (Japan) K. K. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050713 Termination date: 20190614 |
|
CF01 | Termination of patent right due to non-payment of annual fee |