KR101169920B1 - Ｓｏｉ 웨이퍼에 리세스된 소스/드레인 영역들을 포함한 반도체 제조 공정 - Google Patents

Ｓｏｉ 웨이퍼에 리세스된 소스/드레인 영역들을 포함한 반도체 제조 공정 Download PDF

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KR101169920B1
KR101169920B1 KR1020077015260A KR20077015260A KR101169920B1 KR 101169920 B1 KR101169920 B1 KR 101169920B1 KR 1020077015260 A KR1020077015260 A KR 1020077015260A KR 20077015260 A KR20077015260 A KR 20077015260A KR 101169920 B1 KR101169920 B1 KR 101169920B1
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South Korea
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forming
layer
gate
etching
structures
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KR20070094616A (ko
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분-예우 딘
브라이언 제이. 굴스비
비치-옌 엔구옌
디엔 티. 엔구옌
탭 에이. 스테판스
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020077015260A 2005-01-03 2005-11-30 Ｓｏｉ 웨이퍼에 리세스된 소스/드레인 영역들을 포함한 반도체 제조 공정 Expired - Fee Related KR101169920B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/028,811 US7091071B2 (en) 2005-01-03 2005-01-03 Semiconductor fabrication process including recessed source/drain regions in an SOI wafer
US11/028,811 2005-01-03
PCT/US2005/043208 WO2006073624A1 (en) 2005-01-03 2005-11-30 Semiconductor fabrication process including recessed source/drain regions in an soi wafer

Publications (2)

Publication Number Publication Date
KR20070094616A KR20070094616A (ko) 2007-09-20
KR101169920B1 true KR101169920B1 (ko) 2012-08-06

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KR1020077015260A Expired - Fee Related KR101169920B1 (ko) 2005-01-03 2005-11-30 Ｓｏｉ 웨이퍼에 리세스된 소스/드레인 영역들을 포함한 반도체 제조 공정

Country Status (6)

Country Link
US (1) US7091071B2 (enExample)
JP (1) JP4982382B2 (enExample)
KR (1) KR101169920B1 (enExample)
CN (1) CN101076924B (enExample)
TW (1) TWI380374B (enExample)
WO (1) WO2006073624A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358571B2 (en) * 2004-10-20 2008-04-15 Taiwan Semiconductor Manufacturing Company Isolation spacer for thin SOI devices
US7659172B2 (en) * 2005-11-18 2010-02-09 International Business Machines Corporation Structure and method for reducing miller capacitance in field effect transistors
US7422950B2 (en) * 2005-12-14 2008-09-09 Intel Corporation Strained silicon MOS device with box layer between the source and drain regions
JP2008027942A (ja) * 2006-07-18 2008-02-07 Oki Electric Ind Co Ltd 半導体デバイス及びその製造方法
US8114128B2 (en) 2006-11-01 2012-02-14 Depuy Mitek, Inc. Cannulated suture anchor
US7393751B1 (en) 2007-03-13 2008-07-01 International Business Machines Corporation Semiconductor structure including laminated isolation region
US20080272432A1 (en) * 2007-03-19 2008-11-06 Advanced Micro Devices, Inc. Accumulation mode mos devices and methods for fabricating the same
KR101194843B1 (ko) 2007-12-07 2012-10-25 삼성전자주식회사 Ｇｅ 실리사이드층의 형성방법, Ｇｅ 실리사이드층을포함하는 반도체 소자 및 그의 제조방법
US20100038715A1 (en) * 2008-08-18 2010-02-18 International Business Machines Corporation Thin body silicon-on-insulator transistor with borderless self-aligned contacts
US8106456B2 (en) * 2009-07-29 2012-01-31 International Business Machines Corporation SOI transistors having an embedded extension region to improve extension resistance and channel strain characteristics
CN102237396B (zh) * 2010-04-27 2014-04-09 中国科学院微电子研究所 半导体器件及其制造方法
US9698054B2 (en) 2010-10-19 2017-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Strained structure of a p-type field effect transistor
CN102856207B (zh) * 2011-06-30 2015-02-18 中国科学院微电子研究所 一种半导体结构及其制造方法
US8476131B2 (en) 2011-08-24 2013-07-02 Globalfoundries Inc. Methods of forming a semiconductor device with recessed source/design regions, and a semiconductor device comprising same
US9059212B2 (en) 2012-10-31 2015-06-16 International Business Machines Corporation Back-end transistors with highly doped low-temperature contacts
US9006071B2 (en) 2013-03-27 2015-04-14 International Business Machines Corporation Thin channel MOSFET with silicide local interconnect
FR3025941A1 (fr) * 2014-09-17 2016-03-18 Commissariat Energie Atomique Transistor mos a resistance et capacites parasites reduites
US9768254B2 (en) * 2015-07-30 2017-09-19 International Business Machines Corporation Leakage-free implantation-free ETSOI transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100331523B1 (ko) * 1998-03-27 2002-04-06 포만 제프리 엘 에스오아이 집적 회로 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420218B1 (en) 2000-04-24 2002-07-16 Advanced Micro Devices, Inc. Ultra-thin-body SOI MOS transistors having recessed source and drain regions
US6396121B1 (en) * 2000-05-31 2002-05-28 International Business Machines Corporation Structures and methods of anti-fuse formation in SOI
US6930357B2 (en) * 2003-06-16 2005-08-16 Infineon Technologies Ag Active SOI structure with a body contact through an insulator
JP4446690B2 (ja) * 2003-06-27 2010-04-07 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
US7271453B2 (en) * 2004-09-20 2007-09-18 International Business Machines Corporation Buried biasing wells in FETS
US7306997B2 (en) * 2004-11-10 2007-12-11 Advanced Micro Devices, Inc. Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100331523B1 (ko) * 1998-03-27 2002-04-06 포만 제프리 엘 에스오아이 집적 회로 및 그 제조 방법

Also Published As

Publication number Publication date
CN101076924B (zh) 2012-01-18
KR20070094616A (ko) 2007-09-20
TW200636873A (en) 2006-10-16
US20060148196A1 (en) 2006-07-06
WO2006073624A1 (en) 2006-07-13
JP2008527692A (ja) 2008-07-24
JP4982382B2 (ja) 2012-07-25
TWI380374B (en) 2012-12-21
CN101076924A (zh) 2007-11-21
US7091071B2 (en) 2006-08-15

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