KR101134769B1 - 노광 장치, 노광 광 조사 방법 및 표시용 패널 기판의 제조 방법 - Google Patents

노광 장치, 노광 광 조사 방법 및 표시용 패널 기판의 제조 방법 Download PDF

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Publication number
KR101134769B1
KR101134769B1 KR1020100027879A KR20100027879A KR101134769B1 KR 101134769 B1 KR101134769 B1 KR 101134769B1 KR 1020100027879 A KR1020100027879 A KR 1020100027879A KR 20100027879 A KR20100027879 A KR 20100027879A KR 101134769 B1 KR101134769 B1 KR 101134769B1
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KR
South Korea
Prior art keywords
light emitting
semiconductor light
emitting elements
exposure
substrate
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KR1020100027879A
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English (en)
Korean (ko)
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KR20100116114A (ko
Inventor
히데카즈 테즈카
료우지 니모토
히데아키 도이
요시히로 사이토
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20100116114A publication Critical patent/KR20100116114A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020100027879A 2009-04-21 2010-03-29 노광 장치, 노광 광 조사 방법 및 표시용 패널 기판의 제조 방법 KR101134769B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009103292A JP5345443B2 (ja) 2009-04-21 2009-04-21 露光装置、露光光照射方法、及び表示用パネル基板の製造方法
JPJP-P-2009-103292 2009-04-21

Publications (2)

Publication Number Publication Date
KR20100116114A KR20100116114A (ko) 2010-10-29
KR101134769B1 true KR101134769B1 (ko) 2012-04-13

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KR1020100027879A KR101134769B1 (ko) 2009-04-21 2010-03-29 노광 장치, 노광 광 조사 방법 및 표시용 패널 기판의 제조 방법

Country Status (4)

Country Link
JP (1) JP5345443B2 (zh)
KR (1) KR101134769B1 (zh)
CN (1) CN101872132B (zh)
TW (1) TWI421647B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20140012448A (ko) * 2012-07-20 2014-02-03 엘지이노텍 주식회사 광원 및 이를 구비한 노광기

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JP5355261B2 (ja) * 2009-07-07 2013-11-27 株式会社日立ハイテクノロジーズ プロキシミティ露光装置、プロキシミティ露光装置の露光光形成方法、及び表示用パネル基板の製造方法
KR101344037B1 (ko) * 2011-10-19 2013-12-24 주식회사 인피테크 노광용 ｌｅｄ 광원 모듈, 노광용 ｌｅｄ 광원 장치 및 노광용 ｌｅｄ 광원장치 관리시스템
JP2013171088A (ja) * 2012-02-17 2013-09-02 Hitachi High-Technologies Corp プロキシミティ露光装置、プロキシミティ露光装置の露光光形成方法、及び表示用パネル基板の製造方法
KR101999514B1 (ko) * 2012-10-31 2019-07-12 엘지디스플레이 주식회사 노광용 조명장치 및 이를 이용한 노광장치
JP6531545B2 (ja) * 2015-07-29 2019-06-19 岩崎電気株式会社 光照射装置
US10241502B2 (en) 2015-10-01 2019-03-26 Globalfoundries Inc. Methods of error detection in fabrication processes
US10289109B2 (en) 2015-10-01 2019-05-14 Globalfoundries Inc. Methods of error detection in fabrication processes
CN105589302A (zh) * 2016-03-14 2016-05-18 东莞王氏港建机械有限公司 一种平行出光紫外光曝光系统及曝光机
CN107678250A (zh) * 2017-10-31 2018-02-09 中国科学院重庆绿色智能技术研究院 油墨固化用紫外led光源系统
JP7340167B2 (ja) * 2020-01-21 2023-09-07 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
DE102022203331A1 (de) 2022-04-04 2022-11-10 Carl Zeiss Smt Gmbh Beleuchtungssystem und Projektionsbelichtungsanlage für Mikrolithographie
CN116974158B (zh) * 2023-09-25 2024-01-02 鹏城实验室 接近式光刻系统、光源控制优化方法、设备及存储介质

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KR20060084800A (ko) * 2005-01-20 2006-07-25 캐논 가부시끼가이샤 노광장치 및 디바이스의 제조방법
JP2006245144A (ja) 2005-03-01 2006-09-14 Ji Engineering:Kk 露光印字装置及び露光印字方法
JP2007047227A (ja) 2005-08-05 2007-02-22 Y E Data Inc 露光装置における露光量の制御方法
JP2007299908A (ja) 2006-04-28 2007-11-15 Nsk Ltd 半導体ウェハ撮像装置

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WO2003096387A2 (en) * 2002-05-08 2003-11-20 Phoseon Technology, Inc. High efficiency solid-state light source and methods of use and manufacture
JP2004335949A (ja) * 2002-11-29 2004-11-25 Nikon Corp 露光装置及び露光方法
JP2004325872A (ja) * 2003-04-25 2004-11-18 Fuji Photo Film Co Ltd 露光装置及び露光方法
JP2004342633A (ja) * 2003-05-13 2004-12-02 Nikon Corp 露光装置、照明装置及び露光方法
JP2005162880A (ja) * 2003-12-02 2005-06-23 Keyence Corp 紫外線照射装置、および紫外線照射装置のヘッド部識別方法
JP2006019412A (ja) * 2004-06-30 2006-01-19 Canon Inc 露光装置及びデバイスの製造方法
JP4577064B2 (ja) * 2005-03-30 2010-11-10 ウシオ電機株式会社 光照射装置および光照射装置における光源ユニットの交換方法
JP4678493B2 (ja) * 2005-05-23 2011-04-27 株式会社ニコン 光源ユニット、照明光学装置、露光装置、および露光方法
JP2007333965A (ja) * 2006-06-14 2007-12-27 Adtec Engineeng Co Ltd 露光用照明装置
JP4749299B2 (ja) * 2006-09-28 2011-08-17 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2008191252A (ja) * 2007-02-01 2008-08-21 Phoenix Denki Kk 露光用光源ならびにこれを用いた露光装置

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KR20060084800A (ko) * 2005-01-20 2006-07-25 캐논 가부시끼가이샤 노광장치 및 디바이스의 제조방법
JP2006245144A (ja) 2005-03-01 2006-09-14 Ji Engineering:Kk 露光印字装置及び露光印字方法
JP2007047227A (ja) 2005-08-05 2007-02-22 Y E Data Inc 露光装置における露光量の制御方法
JP2007299908A (ja) 2006-04-28 2007-11-15 Nsk Ltd 半導体ウェハ撮像装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140012448A (ko) * 2012-07-20 2014-02-03 엘지이노텍 주식회사 광원 및 이를 구비한 노광기
KR101981799B1 (ko) * 2012-07-20 2019-05-23 엘지이노텍 주식회사 광원 및 이를 구비한 노광기

Also Published As

Publication number Publication date
TWI421647B (zh) 2014-01-01
JP2010256428A (ja) 2010-11-11
KR20100116114A (ko) 2010-10-29
TW201039070A (en) 2010-11-01
JP5345443B2 (ja) 2013-11-20
CN101872132B (zh) 2012-09-19
CN101872132A (zh) 2010-10-27

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