KR101124995B1 - 반도체 장치 및 반도체 장치 제조 방법 - Google Patents

반도체 장치 및 반도체 장치 제조 방법 Download PDF

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Publication number
KR101124995B1
KR101124995B1 KR1020030085429A KR20030085429A KR101124995B1 KR 101124995 B1 KR101124995 B1 KR 101124995B1 KR 1020030085429 A KR1020030085429 A KR 1020030085429A KR 20030085429 A KR20030085429 A KR 20030085429A KR 101124995 B1 KR101124995 B1 KR 101124995B1
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KR
South Korea
Prior art keywords
wiring
interlayer insulating
insulating film
contact hole
pixel
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Expired - Fee Related
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KR1020030085429A
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English (en)
Korean (ko)
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KR20040047720A (ko
Inventor
이시카와아키라
후쿠시마야스모리
Original Assignee
샤프 가부시키가이샤
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20040047720A publication Critical patent/KR20040047720A/ko
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Publication of KR101124995B1 publication Critical patent/KR101124995B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020030085429A 2002-11-29 2003-11-28 반도체 장치 및 반도체 장치 제조 방법 Expired - Fee Related KR101124995B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00347320 2002-11-29
JP2002347320A JP4175877B2 (ja) 2002-11-29 2002-11-29 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
KR20040047720A KR20040047720A (ko) 2004-06-05
KR101124995B1 true KR101124995B1 (ko) 2012-03-28

Family

ID=32500739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030085429A Expired - Fee Related KR101124995B1 (ko) 2002-11-29 2003-11-28 반도체 장치 및 반도체 장치 제조 방법

Country Status (4)

Country Link
US (1) US7122830B2 (enExample)
JP (1) JP4175877B2 (enExample)
KR (1) KR101124995B1 (enExample)
TW (1) TWI270207B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006138960A (ja) * 2004-11-10 2006-06-01 Nec Corp 液晶表示装置及びその製造方法並びに投射表示装置
JP2007184467A (ja) * 2006-01-10 2007-07-19 Fujifilm Corp 固体撮像素子
US7510323B2 (en) * 2006-03-14 2009-03-31 International Business Machines Corporation Multi-layered thermal sensor for integrated circuits and other layered structures
US7176074B1 (en) * 2006-08-10 2007-02-13 Chunghwa Picture Tubes, Ltd. Manufacturing method of thin film transistor array substrate
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
WO2008155086A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Halbleiterbauelement mit ringförmig geschlossener kontaktierung
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
CN101796619B (zh) * 2007-11-02 2013-03-06 夏普株式会社 电路基板和显示装置
TWI657565B (zh) 2011-01-14 2019-04-21 日商半導體能源研究所股份有限公司 半導體記憶裝置
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
CN104488016B (zh) * 2012-07-20 2018-08-10 株式会社半导体能源研究所 显示装置及具有该显示装置的电子设备
US9025117B2 (en) * 2012-09-04 2015-05-05 Shenzhen China Star Optoelectronics Technology Co., Ltd Liquid crystal display panel and manufacturing method thereof
KR101406290B1 (ko) * 2013-05-30 2014-06-12 박준영 액정 표시 장치
WO2018033817A1 (ja) * 2016-08-17 2018-02-22 株式会社半導体エネルギー研究所 表示装置および電子機器
CN107665896B (zh) * 2017-10-27 2021-02-23 北京京东方显示技术有限公司 显示基板及其制作方法、显示面板和显示装置
WO2025159072A1 (ja) * 2024-01-22 2025-07-31 ソニーセミコンダクタソリューションズ株式会社 電子デバイスおよび電子デバイスの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000284722A (ja) * 1999-01-29 2000-10-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002334995A (ja) * 2001-02-28 2002-11-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
JPH0943630A (ja) 1995-07-27 1997-02-14 Toshiba Corp 液晶パネル基板
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3980156B2 (ja) * 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
SG138468A1 (en) * 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
JP2003078037A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体メモリ装置
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
US20030203454A1 (en) * 2002-02-08 2003-10-30 Chotani Gopal K. Methods for producing end-products from carbon substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000284722A (ja) * 1999-01-29 2000-10-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002334995A (ja) * 2001-02-28 2002-11-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Also Published As

Publication number Publication date
KR20040047720A (ko) 2004-06-05
JP4175877B2 (ja) 2008-11-05
JP2004177892A (ja) 2004-06-24
TWI270207B (en) 2007-01-01
US7122830B2 (en) 2006-10-17
US20040113142A1 (en) 2004-06-17
TW200423395A (en) 2004-11-01

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