TWI270207B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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Publication number
TWI270207B
TWI270207B TW092133079A TW92133079A TWI270207B TW I270207 B TWI270207 B TW I270207B TW 092133079 A TW092133079 A TW 092133079A TW 92133079 A TW92133079 A TW 92133079A TW I270207 B TWI270207 B TW I270207B
Authority
TW
Taiwan
Prior art keywords
wiring
insulating film
interlayer insulating
contact hole
pixel
Prior art date
Application number
TW092133079A
Other languages
English (en)
Chinese (zh)
Other versions
TW200423395A (en
Inventor
Akira Ishikawa
Yasumori Fukushima
Original Assignee
Semiconductor Energy Lab
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab, Sharp Kk filed Critical Semiconductor Energy Lab
Publication of TW200423395A publication Critical patent/TW200423395A/zh
Application granted granted Critical
Publication of TWI270207B publication Critical patent/TWI270207B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW092133079A 2002-11-29 2003-11-25 Semiconductor device and method of manufacturing the same TWI270207B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002347320A JP4175877B2 (ja) 2002-11-29 2002-11-29 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
TW200423395A TW200423395A (en) 2004-11-01
TWI270207B true TWI270207B (en) 2007-01-01

Family

ID=32500739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092133079A TWI270207B (en) 2002-11-29 2003-11-25 Semiconductor device and method of manufacturing the same

Country Status (4)

Country Link
US (1) US7122830B2 (enExample)
JP (1) JP4175877B2 (enExample)
KR (1) KR101124995B1 (enExample)
TW (1) TWI270207B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006138960A (ja) * 2004-11-10 2006-06-01 Nec Corp 液晶表示装置及びその製造方法並びに投射表示装置
JP2007184467A (ja) * 2006-01-10 2007-07-19 Fujifilm Corp 固体撮像素子
US7510323B2 (en) * 2006-03-14 2009-03-31 International Business Machines Corporation Multi-layered thermal sensor for integrated circuits and other layered structures
US7176074B1 (en) * 2006-08-10 2007-02-13 Chunghwa Picture Tubes, Ltd. Manufacturing method of thin film transistor array substrate
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
WO2008155085A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Elektrische schaltung mit vertikaler kontaktierung
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8692251B2 (en) 2007-11-02 2014-04-08 Sharp Kabushiki Kaisha Circuit board and display device
TWI492368B (zh) 2011-01-14 2015-07-11 半導體能源研究所股份有限公司 半導體記憶裝置
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
KR20250154556A (ko) * 2012-07-20 2025-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치를 포함하는 전자 장치
CN102854643B (zh) * 2012-09-04 2015-11-25 深圳市华星光电技术有限公司 一种液晶显示面板及其制造方法
KR101406290B1 (ko) * 2013-05-30 2014-06-12 박준영 액정 표시 장치
WO2018033817A1 (ja) * 2016-08-17 2018-02-22 株式会社半導体エネルギー研究所 表示装置および電子機器
CN107665896B (zh) * 2017-10-27 2021-02-23 北京京东方显示技术有限公司 显示基板及其制作方法、显示面板和显示装置
TW202541153A (zh) * 2024-01-22 2025-10-16 日商索尼半導體解決方案公司 電子裝置及電子裝置之製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
JPH0943630A (ja) 1995-07-27 1997-02-14 Toshiba Corp 液晶パネル基板
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3980156B2 (ja) * 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
JP4514871B2 (ja) * 1999-01-29 2010-07-28 株式会社半導体エネルギー研究所 半導体装置および電子機器
SG138468A1 (en) * 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
JP4056765B2 (ja) * 2001-02-28 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003078037A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体メモリ装置
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
US20030203454A1 (en) * 2002-02-08 2003-10-30 Chotani Gopal K. Methods for producing end-products from carbon substrates

Also Published As

Publication number Publication date
US7122830B2 (en) 2006-10-17
TW200423395A (en) 2004-11-01
US20040113142A1 (en) 2004-06-17
KR101124995B1 (ko) 2012-03-28
JP2004177892A (ja) 2004-06-24
KR20040047720A (ko) 2004-06-05
JP4175877B2 (ja) 2008-11-05

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