KR101124137B1 - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR101124137B1
KR101124137B1 KR1020107020510A KR20107020510A KR101124137B1 KR 101124137 B1 KR101124137 B1 KR 101124137B1 KR 1020107020510 A KR1020107020510 A KR 1020107020510A KR 20107020510 A KR20107020510 A KR 20107020510A KR 101124137 B1 KR101124137 B1 KR 101124137B1
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KR
South Korea
Prior art keywords
silicon layer
columnar
conductive
layer
silicon
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KR1020107020510A
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English (en)
Korean (ko)
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KR20100121669A (ko
Inventor
후지오 마스오카
신타로 아라이
히로키 나카무라
도모히코 구도
Original Assignee
유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
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Publication of KR20100121669A publication Critical patent/KR20100121669A/ko
Application granted granted Critical
Publication of KR101124137B1 publication Critical patent/KR101124137B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020107020510A 2008-02-15 2009-02-16 반도체 장치 및 그 제조방법 KR101124137B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2008/052564 WO2009110048A1 (ja) 2008-02-15 2008-02-15 半導体装置及びその製造方法
WOPCT/JP2008/052564 2008-02-15
PCT/JP2009/052560 WO2009102062A1 (ja) 2008-02-15 2009-02-16 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20100121669A KR20100121669A (ko) 2010-11-18
KR101124137B1 true KR101124137B1 (ko) 2012-03-21

Family

ID=40957091

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107020510A KR101124137B1 (ko) 2008-02-15 2009-02-16 반도체 장치 및 그 제조방법

Country Status (5)

Country Link
EP (1) EP2244304A4 (zh)
KR (1) KR101124137B1 (zh)
CN (1) CN101946332B (zh)
TW (1) TWI423344B (zh)
WO (2) WO2009110048A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101251787B1 (ko) 2010-12-01 2013-04-08 현대자동차주식회사 변속레인지 검출장치 및 이를 구비한 차량의 변속장치
US9958424B2 (en) * 2012-10-01 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of identifying airborne molecular contamination source
JP6378826B2 (ja) 2015-04-06 2018-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Ｓｇｔを有する柱状半導体装置と、その製造方法
US10522557B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Surface topography by forming spacer-like components
JP2022014750A (ja) * 2020-07-07 2022-01-20 キオクシア株式会社 半導体装置およびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060020674A (ko) * 2003-06-12 2006-03-06 어드밴스드 마이크로 디바이시즈, 인코포레이티드 Ｆｉｎｆｅｔ내의 게이트 영역의 다단계 화학 기계 연마
KR20070037318A (ko) * 2005-09-30 2007-04-04 세이코 엡슨 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
KR20070064346A (ko) * 2004-10-18 2007-06-20 인터내셔널 비지네스 머신즈 코포레이션 ＦｉｎＦＥＴｓ와 통합된 평면 기판 장치 및 제조 방법

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JPS6113661A (ja) * 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP3057661B2 (ja) 1988-09-06 2000-07-04 株式会社東芝 半導体装置
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JP2950558B2 (ja) 1989-11-01 1999-09-20 株式会社東芝 半導体装置
DE19746900C2 (de) * 1997-10-23 2002-02-14 Infineon Technologies Ag Vertikaler MOS-Transistor und Verfahren zu dessen Herstellung
DE19746901C2 (de) * 1997-10-23 1999-08-12 Siemens Ag Verfahren zur Herstellung eines vertikalen MOS-Transistors
JP4078721B2 (ja) * 1998-08-24 2008-04-23 ソニー株式会社 半導体装置とその製造方法
JP3376302B2 (ja) * 1998-12-04 2003-02-10 株式会社東芝 半導体装置及びその製造方法
US6392271B1 (en) * 1999-06-28 2002-05-21 Intel Corporation Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
JP4064607B2 (ja) * 2000-09-08 2008-03-19 株式会社東芝 半導体メモリ装置
US6511884B1 (en) * 2001-10-09 2003-01-28 Chartered Semiconductor Manufacturing Ltd. Method to form and/or isolate vertical transistors
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
US6605501B1 (en) * 2002-06-06 2003-08-12 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS device with dual gate electrode
JP2004319808A (ja) * 2003-04-17 2004-11-11 Takehide Shirato Ｍｉｓ電界効果トランジスタ及びその製造方法
ATE546837T1 (de) * 2004-01-22 2012-03-15 Ibm Vertikal fin-fet-mos-vorrichtungen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060020674A (ko) * 2003-06-12 2006-03-06 어드밴스드 마이크로 디바이시즈, 인코포레이티드 Ｆｉｎｆｅｔ내의 게이트 영역의 다단계 화학 기계 연마
KR20070064346A (ko) * 2004-10-18 2007-06-20 인터내셔널 비지네스 머신즈 코포레이션 ＦｉｎＦＥＴｓ와 통합된 평면 기판 장치 및 제조 방법
KR20070037318A (ko) * 2005-09-30 2007-04-04 세이코 엡슨 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
CN101946332A (zh) 2011-01-12
EP2244304A4 (en) 2013-10-09
WO2009102062A1 (ja) 2009-08-20
EP2244304A1 (en) 2010-10-27
KR20100121669A (ko) 2010-11-18
CN101946332B (zh) 2012-02-15
TW200937536A (en) 2009-09-01
WO2009110048A1 (ja) 2009-09-11
TWI423344B (zh) 2014-01-11

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