KR101116589B1 - 에칭 깊이 제어용 장치 및 방법 - Google Patents

에칭 깊이 제어용 장치 및 방법 Download PDF

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Publication number
KR101116589B1
KR101116589B1 KR1020057005131A KR20057005131A KR101116589B1 KR 101116589 B1 KR101116589 B1 KR 101116589B1 KR 1020057005131 A KR1020057005131 A KR 1020057005131A KR 20057005131 A KR20057005131 A KR 20057005131A KR 101116589 B1 KR101116589 B1 KR 101116589B1
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South Korea
Prior art keywords
depth
etching
etch
feature
etch rate
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Expired - Fee Related
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KR1020057005131A
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English (en)
Korean (ko)
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KR20050047126A (ko
Inventor
톰 에이 캠프
앨런 제이 밀러
비자야쿠마르 씨 베누고팔
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Blast Furnaces (AREA)
KR1020057005131A 2002-09-25 2003-09-18 에칭 깊이 제어용 장치 및 방법 Expired - Fee Related KR101116589B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/256,251 2002-09-25
US10/256,251 US6939811B2 (en) 2002-09-25 2002-09-25 Apparatus and method for controlling etch depth
PCT/US2003/030117 WO2004030050A2 (en) 2002-09-25 2003-09-18 Apparatus and method for controlling etch depth

Publications (2)

Publication Number Publication Date
KR20050047126A KR20050047126A (ko) 2005-05-19
KR101116589B1 true KR101116589B1 (ko) 2012-03-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057005131A Expired - Fee Related KR101116589B1 (ko) 2002-09-25 2003-09-18 에칭 깊이 제어용 장치 및 방법

Country Status (10)

Country Link
US (1) US6939811B2 (enExample)
EP (1) EP1543547B1 (enExample)
JP (1) JP2006500781A (enExample)
KR (1) KR101116589B1 (enExample)
CN (1) CN100449706C (enExample)
AT (1) ATE499701T1 (enExample)
AU (1) AU2003275221A1 (enExample)
DE (1) DE60336150D1 (enExample)
TW (1) TWI324356B (enExample)
WO (1) WO2004030050A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6824813B1 (en) * 2000-04-06 2004-11-30 Applied Materials Inc Substrate monitoring method and apparatus
WO2006012297A1 (en) * 2004-06-29 2006-02-02 Unaxis Usa Inc. Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes
US7393459B2 (en) * 2004-08-06 2008-07-01 Applied Materials, Inc. Method for automatic determination of substrates states in plasma processing chambers
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
JP2006186222A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
KR100562657B1 (ko) * 2004-12-29 2006-03-20 주식회사 하이닉스반도체 리세스게이트 및 그를 구비한 반도체장치의 제조 방법
US20060154388A1 (en) * 2005-01-08 2006-07-13 Richard Lewington Integrated metrology chamber for transparent substrates
US7601272B2 (en) 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing
US7413992B2 (en) * 2005-06-01 2008-08-19 Lam Research Corporation Tungsten silicide etch process with reduced etch rate micro-loading
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
KR100707803B1 (ko) * 2005-10-28 2007-04-17 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조방법
JP2007184356A (ja) * 2006-01-05 2007-07-19 Oki Electric Ind Co Ltd エッチング方法
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
JP4101280B2 (ja) 2006-07-28 2008-06-18 住友精密工業株式会社 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置
US20080078948A1 (en) * 2006-10-03 2008-04-03 Tokyo Electron Limited Processing termination detection method and apparatus
US7572734B2 (en) * 2006-10-27 2009-08-11 Applied Materials, Inc. Etch depth control for dual damascene fabrication process
US7521332B2 (en) * 2007-03-23 2009-04-21 Alpha & Omega Semiconductor, Ltd Resistance-based etch depth determination for SGT technology
CN100565839C (zh) * 2007-05-31 2009-12-02 联华电子股份有限公司 不同厚度的栅氧化层的制造方法
US7851370B2 (en) * 2007-09-25 2010-12-14 United Microelectronics Corp. Patterning method
US8304316B2 (en) * 2007-12-20 2012-11-06 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
JP5308080B2 (ja) * 2008-06-18 2013-10-09 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
CN102044431A (zh) * 2009-10-20 2011-05-04 中芯国际集成电路制造(上海)有限公司 刻蚀方法和刻蚀系统
EP2534672B1 (en) 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source
US9050394B2 (en) * 2011-05-09 2015-06-09 Palmaz Scientific, Inc. Method for making topographical features on a surface of a medical device
US12226301B2 (en) * 2011-05-09 2025-02-18 Vactronix Scientific, Llc Method of making topographical features and patterns on a surface of a medical device
JP5792613B2 (ja) * 2011-12-28 2015-10-14 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5724945B2 (ja) * 2012-05-18 2015-05-27 株式会社デンソー 炭化珪素半導体装置の製造方法
US9275916B2 (en) * 2013-05-03 2016-03-01 Infineon Technologies Ag Removable indicator structure in electronic chips of a common substrate for process adjustment
CN104377141B (zh) * 2013-08-16 2017-05-03 无锡华润华晶微电子有限公司 检测晶片深沟槽结构的实际关键尺寸及是否过刻蚀的方法
US9484214B2 (en) 2014-02-19 2016-11-01 Lam Research Corporation Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
US20160181111A1 (en) * 2014-12-19 2016-06-23 Lam Research Corporation Silicon etch and clean
WO2018092050A1 (en) * 2016-11-16 2018-05-24 Nova Measuring Instruments Ltd. Layer detection for high aspect ratio etch control
CN110574397B (zh) * 2018-12-29 2021-04-27 共达电声股份有限公司 Mems声音传感器、mems麦克风及电子设备
CN111341656A (zh) * 2020-03-19 2020-06-26 常州星海电子股份有限公司 光阻玻璃芯片全自动腐蚀工艺
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051436A (ko) * 1999-11-05 2001-06-25 브라이언 알. 바흐맨 무산소 플라즈마법에서의 종말점 검출방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US52113A (en) * 1866-01-16 Improvement in feed apparatus for steam-generators
JPS62259444A (ja) 1986-05-06 1987-11-11 Hitachi Ltd 表面処理方法
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JPH08316200A (ja) * 1995-05-18 1996-11-29 Toshiba Corp ドライエッチング方法及びドライエッチング装置
JPH09129619A (ja) * 1995-08-31 1997-05-16 Toshiba Corp エッチング深さ測定装置
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
US5807789A (en) 1997-03-20 1998-09-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI)
US6127237A (en) * 1998-03-04 2000-10-03 Kabushiki Kaisha Toshiba Etching end point detecting method based on junction current measurement and etching apparatus
JPH11318398A (ja) * 1998-03-10 1999-11-24 Kagisho:Kk 超微粉末海苔及びその応用
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
CN1064177C (zh) * 1998-05-13 2001-04-04 中国航天工业总公司第二研究院二十三所 变深度刻蚀方法及其装置
JP2000329525A (ja) * 1999-05-18 2000-11-30 Toshiba Corp 段差測定方法並びにエッチング深さ測定方法及びそれらの装置
US6400458B1 (en) 1999-09-30 2002-06-04 Lam Research Corporation Interferometric method for endpointing plasma etch processes
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
KR20030038763A (ko) * 2000-09-21 2003-05-16 어플라이드 머티어리얼즈 인코포레이티드 체임버 내부면상의 공정 잔류물의 증착 저감
US20030000922A1 (en) * 2001-06-27 2003-01-02 Ramkumar Subramanian Using scatterometry to develop real time etch image

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051436A (ko) * 1999-11-05 2001-06-25 브라이언 알. 바흐맨 무산소 플라즈마법에서의 종말점 검출방법

Also Published As

Publication number Publication date
AU2003275221A1 (en) 2004-04-19
WO2004030050A2 (en) 2004-04-08
CN1701420A (zh) 2005-11-23
EP1543547B1 (en) 2011-02-23
DE60336150D1 (de) 2011-04-07
JP2006500781A (ja) 2006-01-05
TW200411734A (en) 2004-07-01
TWI324356B (en) 2010-05-01
WO2004030050A3 (en) 2004-04-29
CN100449706C (zh) 2009-01-07
US20040084406A1 (en) 2004-05-06
US6939811B2 (en) 2005-09-06
AU2003275221A8 (en) 2004-04-19
ATE499701T1 (de) 2011-03-15
KR20050047126A (ko) 2005-05-19
EP1543547A2 (en) 2005-06-22

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