CN100449706C - 控制蚀刻深度的装置和方法 - Google Patents

控制蚀刻深度的装置和方法 Download PDF

Info

Publication number
CN100449706C
CN100449706C CNB038253666A CN03825366A CN100449706C CN 100449706 C CN100449706 C CN 100449706C CN B038253666 A CNB038253666 A CN B038253666A CN 03825366 A CN03825366 A CN 03825366A CN 100449706 C CN100449706 C CN 100449706C
Authority
CN
China
Prior art keywords
etching
depth
etch
etch rate
feature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB038253666A
Other languages
English (en)
Chinese (zh)
Other versions
CN1701420A (zh
Inventor
T·A·坎普
A·J·米勒
V·C·维努戈帕尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN1701420A publication Critical patent/CN1701420A/zh
Application granted granted Critical
Publication of CN100449706C publication Critical patent/CN100449706C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Blast Furnaces (AREA)
CNB038253666A 2002-09-25 2003-09-18 控制蚀刻深度的装置和方法 Expired - Lifetime CN100449706C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/256,251 2002-09-25
US10/256,251 US6939811B2 (en) 2002-09-25 2002-09-25 Apparatus and method for controlling etch depth

Publications (2)

Publication Number Publication Date
CN1701420A CN1701420A (zh) 2005-11-23
CN100449706C true CN100449706C (zh) 2009-01-07

Family

ID=32041765

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038253666A Expired - Lifetime CN100449706C (zh) 2002-09-25 2003-09-18 控制蚀刻深度的装置和方法

Country Status (10)

Country Link
US (1) US6939811B2 (enExample)
EP (1) EP1543547B1 (enExample)
JP (1) JP2006500781A (enExample)
KR (1) KR101116589B1 (enExample)
CN (1) CN100449706C (enExample)
AT (1) ATE499701T1 (enExample)
AU (1) AU2003275221A1 (enExample)
DE (1) DE60336150D1 (enExample)
TW (1) TWI324356B (enExample)
WO (1) WO2004030050A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6824813B1 (en) * 2000-04-06 2004-11-30 Applied Materials Inc Substrate monitoring method and apparatus
WO2006012297A1 (en) * 2004-06-29 2006-02-02 Unaxis Usa Inc. Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes
US7393459B2 (en) * 2004-08-06 2008-07-01 Applied Materials, Inc. Method for automatic determination of substrates states in plasma processing chambers
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
JP2006186222A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
KR100562657B1 (ko) * 2004-12-29 2006-03-20 주식회사 하이닉스반도체 리세스게이트 및 그를 구비한 반도체장치의 제조 방법
US20060154388A1 (en) * 2005-01-08 2006-07-13 Richard Lewington Integrated metrology chamber for transparent substrates
US7601272B2 (en) 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing
US7413992B2 (en) * 2005-06-01 2008-08-19 Lam Research Corporation Tungsten silicide etch process with reduced etch rate micro-loading
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
KR100707803B1 (ko) * 2005-10-28 2007-04-17 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조방법
JP2007184356A (ja) * 2006-01-05 2007-07-19 Oki Electric Ind Co Ltd エッチング方法
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
JP4101280B2 (ja) 2006-07-28 2008-06-18 住友精密工業株式会社 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置
US20080078948A1 (en) * 2006-10-03 2008-04-03 Tokyo Electron Limited Processing termination detection method and apparatus
US7572734B2 (en) * 2006-10-27 2009-08-11 Applied Materials, Inc. Etch depth control for dual damascene fabrication process
US7521332B2 (en) * 2007-03-23 2009-04-21 Alpha & Omega Semiconductor, Ltd Resistance-based etch depth determination for SGT technology
CN100565839C (zh) * 2007-05-31 2009-12-02 联华电子股份有限公司 不同厚度的栅氧化层的制造方法
US7851370B2 (en) * 2007-09-25 2010-12-14 United Microelectronics Corp. Patterning method
US8304316B2 (en) * 2007-12-20 2012-11-06 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
JP5308080B2 (ja) * 2008-06-18 2013-10-09 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
CN102044431A (zh) * 2009-10-20 2011-05-04 中芯国际集成电路制造(上海)有限公司 刻蚀方法和刻蚀系统
EP2534672B1 (en) 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source
US9050394B2 (en) * 2011-05-09 2015-06-09 Palmaz Scientific, Inc. Method for making topographical features on a surface of a medical device
US12226301B2 (en) * 2011-05-09 2025-02-18 Vactronix Scientific, Llc Method of making topographical features and patterns on a surface of a medical device
JP5792613B2 (ja) * 2011-12-28 2015-10-14 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5724945B2 (ja) * 2012-05-18 2015-05-27 株式会社デンソー 炭化珪素半導体装置の製造方法
US9275916B2 (en) * 2013-05-03 2016-03-01 Infineon Technologies Ag Removable indicator structure in electronic chips of a common substrate for process adjustment
CN104377141B (zh) * 2013-08-16 2017-05-03 无锡华润华晶微电子有限公司 检测晶片深沟槽结构的实际关键尺寸及是否过刻蚀的方法
US9484214B2 (en) 2014-02-19 2016-11-01 Lam Research Corporation Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
US20160181111A1 (en) * 2014-12-19 2016-06-23 Lam Research Corporation Silicon etch and clean
WO2018092050A1 (en) * 2016-11-16 2018-05-24 Nova Measuring Instruments Ltd. Layer detection for high aspect ratio etch control
CN110574397B (zh) * 2018-12-29 2021-04-27 共达电声股份有限公司 Mems声音传感器、mems麦克风及电子设备
CN111341656A (zh) * 2020-03-19 2020-06-26 常州星海电子股份有限公司 光阻玻璃芯片全自动腐蚀工艺
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259444A (ja) * 1986-05-06 1987-11-11 Hitachi Ltd 表面処理方法
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5807789A (en) * 1997-03-20 1998-09-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI)
CN1209645A (zh) * 1998-05-13 1999-03-03 中国航天工业总公司第二研究院二十三所 高速变深度刻蚀方法及其装置
US20020052113A1 (en) * 2000-02-25 2002-05-02 Applied Materials, Inc. Two etchant etch method
US6400458B1 (en) * 1999-09-30 2002-06-04 Lam Research Corporation Interferometric method for endpointing plasma etch processes
US6406924B1 (en) * 1998-04-17 2002-06-18 Applied Materials, Inc. Endpoint detection in the fabrication of electronic devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US52113A (en) * 1866-01-16 Improvement in feed apparatus for steam-generators
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
JPH08316200A (ja) * 1995-05-18 1996-11-29 Toshiba Corp ドライエッチング方法及びドライエッチング装置
JPH09129619A (ja) * 1995-08-31 1997-05-16 Toshiba Corp エッチング深さ測定装置
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
US6127237A (en) * 1998-03-04 2000-10-03 Kabushiki Kaisha Toshiba Etching end point detecting method based on junction current measurement and etching apparatus
JPH11318398A (ja) * 1998-03-10 1999-11-24 Kagisho:Kk 超微粉末海苔及びその応用
JP2000329525A (ja) * 1999-05-18 2000-11-30 Toshiba Corp 段差測定方法並びにエッチング深さ測定方法及びそれらの装置
US6492186B1 (en) * 1999-08-05 2002-12-10 Eaton Corporation Method for detecting an endpoint for an oxygen free plasma process
KR20030038763A (ko) * 2000-09-21 2003-05-16 어플라이드 머티어리얼즈 인코포레이티드 체임버 내부면상의 공정 잔류물의 증착 저감
US20030000922A1 (en) * 2001-06-27 2003-01-02 Ramkumar Subramanian Using scatterometry to develop real time etch image

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259444A (ja) * 1986-05-06 1987-11-11 Hitachi Ltd 表面処理方法
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5807789A (en) * 1997-03-20 1998-09-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI)
US6406924B1 (en) * 1998-04-17 2002-06-18 Applied Materials, Inc. Endpoint detection in the fabrication of electronic devices
CN1209645A (zh) * 1998-05-13 1999-03-03 中国航天工业总公司第二研究院二十三所 高速变深度刻蚀方法及其装置
US6400458B1 (en) * 1999-09-30 2002-06-04 Lam Research Corporation Interferometric method for endpointing plasma etch processes
US20020052113A1 (en) * 2000-02-25 2002-05-02 Applied Materials, Inc. Two etchant etch method

Also Published As

Publication number Publication date
AU2003275221A1 (en) 2004-04-19
WO2004030050A2 (en) 2004-04-08
KR101116589B1 (ko) 2012-03-15
CN1701420A (zh) 2005-11-23
EP1543547B1 (en) 2011-02-23
DE60336150D1 (de) 2011-04-07
JP2006500781A (ja) 2006-01-05
TW200411734A (en) 2004-07-01
TWI324356B (en) 2010-05-01
WO2004030050A3 (en) 2004-04-29
US20040084406A1 (en) 2004-05-06
US6939811B2 (en) 2005-09-06
AU2003275221A8 (en) 2004-04-19
ATE499701T1 (de) 2011-03-15
KR20050047126A (ko) 2005-05-19
EP1543547A2 (en) 2005-06-22

Similar Documents

Publication Publication Date Title
CN100449706C (zh) 控制蚀刻深度的装置和方法
US7341922B2 (en) Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP6200849B2 (ja) プラズマ処理装置およびドライエッチング方法
JP2002532899A (ja) 損傷の少ないトランジスタデバイスを達成する高密度プラズマエッチング装置の稼働方法
US6919259B2 (en) Method for STI etching using endpoint detection
KR20010075467A (ko) 플라즈마 에칭 공정의 정확도를 개선시키기 위한 방법 및장치
KR101021665B1 (ko) 드라이에칭방법 및 그 장치
JP4694064B2 (ja) プラズマエッチング終点検出方法及び装置
KR20020063297A (ko) 건식 식각기의 원위치 제어
US20040018647A1 (en) Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry
TW200409232A (en) Pre-endpoint techniques in photoresist etching
US7141510B2 (en) Plasma processing method
CN102365392A (zh) 等离子体蚀刻方法
JP2003332306A (ja) 半導体装置の製造方法
JP5411105B2 (ja) ドライエッチング装置
JP2022110857A (ja) プラズマエッチング方法、プラズマエッチング装置、および素子チップの製造方法
TWI797525B (zh) 半導體裝置的製造方法
US20050106868A1 (en) Etching method
CN113053744B (zh) 半导体装置的制造方法
KR20040098845A (ko) 유도 결합 플라즈마 장치를 사용하여 높은 포토레지스트선택비를 구현할 수 있는 식각 방법
KR100739965B1 (ko) 반도체 장치 제조를 위한 식각 방법
JP2002124485A (ja) 半導体装置の製造方法
JP2001093878A (ja) エッチング終点検出方法及び半導体装置の製造方法
KR20080034601A (ko) 식각종말점 검출장치를 이용한 반도체 메모리 디바이스의게이트 형성방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20090107

CX01 Expiry of patent term