KR101116589B1 - 에칭 깊이 제어용 장치 및 방법 - Google Patents
에칭 깊이 제어용 장치 및 방법 Download PDFInfo
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- KR101116589B1 KR101116589B1 KR1020057005131A KR20057005131A KR101116589B1 KR 101116589 B1 KR101116589 B1 KR 101116589B1 KR 1020057005131 A KR1020057005131 A KR 1020057005131A KR 20057005131 A KR20057005131 A KR 20057005131A KR 101116589 B1 KR101116589 B1 KR 101116589B1
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- 238000000034 method Methods 0.000 title claims abstract description 95
- 238000005530 etching Methods 0.000 claims abstract description 105
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims description 41
- 230000008859 change Effects 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Blast Furnaces (AREA)
Abstract
Description
Claims (20)
- 웨이퍼의 층에서 일정한 피쳐 (feature) 깊이를 가지는 피쳐를 에칭하는 방법으로서,상기 피쳐의 제 1 깊이까지, 제 1 에칭 속도로 에칭하는 단계;상기 제 1 깊이부터 제 2 깊이까지, 상기 제 1 에칭 속도보다 더 느린 제 2 에칭 속도로 에칭하는 단계;상기 제 2 깊이가 상기 피쳐 깊이에 도달한 때를 광학적으로 결정하는 단계; 및상기 피쳐의 에칭을 정지하는 단계를 포함하는, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 제 1 깊이까지 에칭하는 단계는, 원하는 피쳐 프로파일 (profile) 을 형성하는 단계를 포함하는, 피쳐 에칭 방법.
- 제 2 항에 있어서,상기 제 1 깊이부터 상기 제 2 깊이까지 에칭하는 단계는, 상기 원하는 피쳐 프로파일을 실질적으로 유지하는, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 제 1 깊이는, 상기 피쳐 깊이의 65 내지 85 퍼센트의 범위 내에 있는, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 피쳐는 트렌치인, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 층은 결정질 실리콘층인, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 에칭의 깊이는, 상기 피쳐 에칭 방법 전체에 걸쳐 광학적으로 결정되는, 피쳐 에칭 방법.
- 제 7 항에 있어서,상기 제 1 깊이에 도달한 때를 광학적으로 결정하는 단계를 더 포함하는, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 에칭 속도는 에천트의 조성을 변경함으로써 변경되는, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 층은 연관된 에칭 정지 표시기를 가지지 않는, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 층은 에칭 정지 층을 가지지 않는, 피쳐 에칭 방법.
- 제 1 항에 있어서,상기 광학적으로 결정하는 단계는, 광학 종점 (end point) 기술을 사용하여 수행되는, 피쳐 에칭 방법.
- 제 12 항에 있어서,상기 광학 종점 기술은 간섭측정의 종점 (interferometric end point) 및 광대역 반사파 측정 기반의 종점 (broadband reflectometry based end point) 을 포함하는 그룹으로부터 선택되는, 피쳐 에칭 방법.
- 제 1 항에 있어서,리세스 및 얕은 트렌치 분리를 포함하는 그룹으로부터 선택된 프로세스의 일부인, 피쳐 에칭 방법.
- 제 1 항에 있어서,절대 피쳐 깊이는 광학적으로 결정되는, 피쳐 에칭 방법.
- 웨이퍼의 실리콘 층에서 종점 (end point) 을 가지는 트렌치를 에칭하는 방법으로서,제 1 에칭 속도로 에칭하는 단계;상기 제 1 에칭 속도보다 더 느린 제 2 에칭 속도로 에칭하는 단계;현재 에칭 깊이를 광학적으로 결정하는 단계; 및상기 트렌치의 깊이가 상기 종점에 도달하도록 에칭을 정지하는 단계를 포함하는, 트렌치 에칭 방법.
- 제 16 항에 있어서,상기 제 1 에칭 속도로 에칭하는 단계는, 원하는 트렌치 프로파일을 형성하는, 트렌치 에칭 방법.
- 제 17 항에 있어서,상기 제 2 에칭 속도로 에칭하는 단계는, 상기 원하는 트렌치 프로파일을 실질적으로 유지하는, 트렌치 에칭 방법.
- 제 16 항에 있어서,상기 에칭 속도를 변경할 때를 광학적으로 결정하는 단계를 포함하는, 트렌치 에칭 방법.
- 웨이퍼의 층에서 일정한 피쳐 깊이를 가지는 피쳐를 에칭하는 장치로서,상기 웨이퍼를 홀딩하기 위한 척을 포함하는 에칭 기구;상기 에칭 기구와 인접하고, 에칭될 상기 피쳐의 에칭 깊이를 측정하도록 위치한, 광학 종점 (end point) 디바이스; 및상기 광학 종점 디바이스 및 상기 에칭 기구와 통신하며, 상기 피쳐 깊이보다 더 얕은 제 1 에칭 깊이에서 상기 에칭 기구의 에칭 속도를 줄이고 상기 에칭 기구의 에칭을 정지하여, 상기 에칭 깊이가 상기 피쳐 깊이에 도달하도록 구성되는 전자 제어기를 포함하는, 피쳐 에칭 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/256,251 | 2002-09-25 | ||
US10/256,251 US6939811B2 (en) | 2002-09-25 | 2002-09-25 | Apparatus and method for controlling etch depth |
PCT/US2003/030117 WO2004030050A2 (en) | 2002-09-25 | 2003-09-18 | Apparatus and method for controlling etch depth |
Publications (2)
Publication Number | Publication Date |
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KR20050047126A KR20050047126A (ko) | 2005-05-19 |
KR101116589B1 true KR101116589B1 (ko) | 2012-03-15 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020057005131A KR101116589B1 (ko) | 2002-09-25 | 2003-09-18 | 에칭 깊이 제어용 장치 및 방법 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6939811B2 (ko) |
EP (1) | EP1543547B1 (ko) |
JP (1) | JP2006500781A (ko) |
KR (1) | KR101116589B1 (ko) |
CN (1) | CN100449706C (ko) |
AT (1) | ATE499701T1 (ko) |
AU (1) | AU2003275221A1 (ko) |
DE (1) | DE60336150D1 (ko) |
TW (1) | TWI324356B (ko) |
WO (1) | WO2004030050A2 (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6824813B1 (en) * | 2000-04-06 | 2004-11-30 | Applied Materials Inc | Substrate monitoring method and apparatus |
CN100517596C (zh) * | 2004-06-29 | 2009-07-22 | 优利讯美国有限公司 | 减少时分复用蚀刻工艺中蚀刻纵横比相关度的方法和装置 |
US7393459B2 (en) * | 2004-08-06 | 2008-07-01 | Applied Materials, Inc. | Method for automatic determination of substrates states in plasma processing chambers |
JP4629421B2 (ja) * | 2004-12-06 | 2011-02-09 | パナソニック株式会社 | ドライエッチング方法及びドライエッチング装置 |
JP2006186222A (ja) * | 2004-12-28 | 2006-07-13 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
KR100562657B1 (ko) * | 2004-12-29 | 2006-03-20 | 주식회사 하이닉스반도체 | 리세스게이트 및 그를 구비한 반도체장치의 제조 방법 |
US7601272B2 (en) | 2005-01-08 | 2009-10-13 | Applied Materials, Inc. | Method and apparatus for integrating metrology with etch processing |
US20060154388A1 (en) | 2005-01-08 | 2006-07-13 | Richard Lewington | Integrated metrology chamber for transparent substrates |
US7413992B2 (en) * | 2005-06-01 | 2008-08-19 | Lam Research Corporation | Tungsten silicide etch process with reduced etch rate micro-loading |
US7833381B2 (en) * | 2005-08-18 | 2010-11-16 | David Johnson | Optical emission interferometry for PECVD using a gas injection hole |
KR100707803B1 (ko) * | 2005-10-28 | 2007-04-17 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조방법 |
JP2007184356A (ja) * | 2006-01-05 | 2007-07-19 | Oki Electric Ind Co Ltd | エッチング方法 |
US7932181B2 (en) * | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
JP4101280B2 (ja) * | 2006-07-28 | 2008-06-18 | 住友精密工業株式会社 | 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置 |
US20080078948A1 (en) * | 2006-10-03 | 2008-04-03 | Tokyo Electron Limited | Processing termination detection method and apparatus |
US7572734B2 (en) * | 2006-10-27 | 2009-08-11 | Applied Materials, Inc. | Etch depth control for dual damascene fabrication process |
US7521332B2 (en) * | 2007-03-23 | 2009-04-21 | Alpha & Omega Semiconductor, Ltd | Resistance-based etch depth determination for SGT technology |
US7851370B2 (en) * | 2007-09-25 | 2010-12-14 | United Microelectronics Corp. | Patterning method |
US8304316B2 (en) * | 2007-12-20 | 2012-11-06 | Cambridge Semiconductor Limited | Semiconductor device and method of forming a semiconductor device |
JP5308080B2 (ja) * | 2008-06-18 | 2013-10-09 | Sppテクノロジーズ株式会社 | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |
CN102044431A (zh) * | 2009-10-20 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | 刻蚀方法和刻蚀系统 |
EP2534672B1 (en) | 2010-02-09 | 2016-06-01 | Energetiq Technology Inc. | Laser-driven light source |
US9050394B2 (en) * | 2011-05-09 | 2015-06-09 | Palmaz Scientific, Inc. | Method for making topographical features on a surface of a medical device |
JP5792613B2 (ja) * | 2011-12-28 | 2015-10-14 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
JP5724945B2 (ja) * | 2012-05-18 | 2015-05-27 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US9275916B2 (en) * | 2013-05-03 | 2016-03-01 | Infineon Technologies Ag | Removable indicator structure in electronic chips of a common substrate for process adjustment |
CN104377141B (zh) * | 2013-08-16 | 2017-05-03 | 无锡华润华晶微电子有限公司 | 检测晶片深沟槽结构的实际关键尺寸及是否过刻蚀的方法 |
US9484214B2 (en) | 2014-02-19 | 2016-11-01 | Lam Research Corporation | Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma |
US20160181111A1 (en) * | 2014-12-19 | 2016-06-23 | Lam Research Corporation | Silicon etch and clean |
WO2018092050A1 (en) | 2016-11-16 | 2018-05-24 | Nova Measuring Instruments Ltd. | Layer detection for high aspect ratio etch control |
CN110574397B (zh) * | 2018-12-29 | 2021-04-27 | 共达电声股份有限公司 | Mems声音传感器、mems麦克风及电子设备 |
CN111341656A (zh) * | 2020-03-19 | 2020-06-26 | 常州星海电子股份有限公司 | 光阻玻璃芯片全自动腐蚀工艺 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010051436A (ko) * | 1999-11-05 | 2001-06-25 | 브라이언 알. 바흐맨 | 무산소 플라즈마법에서의 종말점 검출방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US52113A (en) * | 1866-01-16 | Improvement in feed apparatus for steam-generators | ||
JPS62259444A (ja) | 1986-05-06 | 1987-11-11 | Hitachi Ltd | 表面処理方法 |
US5362356A (en) * | 1990-12-20 | 1994-11-08 | Lsi Logic Corporation | Plasma etching process control |
US5450205A (en) * | 1993-05-28 | 1995-09-12 | Massachusetts Institute Of Technology | Apparatus and method for real-time measurement of thin film layer thickness and changes thereof |
JPH08316200A (ja) * | 1995-05-18 | 1996-11-29 | Toshiba Corp | ドライエッチング方法及びドライエッチング装置 |
JPH09129619A (ja) * | 1995-08-31 | 1997-05-16 | Toshiba Corp | エッチング深さ測定装置 |
US6159297A (en) * | 1996-04-25 | 2000-12-12 | Applied Materials, Inc. | Semiconductor process chamber and processing method |
US5807789A (en) * | 1997-03-20 | 1998-09-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI) |
US6127237A (en) * | 1998-03-04 | 2000-10-03 | Kabushiki Kaisha Toshiba | Etching end point detecting method based on junction current measurement and etching apparatus |
JPH11318398A (ja) * | 1998-03-10 | 1999-11-24 | Kagisho:Kk | 超微粉末海苔及びその応用 |
US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
CN1064177C (zh) * | 1998-05-13 | 2001-04-04 | 中国航天工业总公司第二研究院二十三所 | 变深度刻蚀方法及其装置 |
JP2000329525A (ja) * | 1999-05-18 | 2000-11-30 | Toshiba Corp | 段差測定方法並びにエッチング深さ測定方法及びそれらの装置 |
US6400458B1 (en) * | 1999-09-30 | 2002-06-04 | Lam Research Corporation | Interferometric method for endpointing plasma etch processes |
US6391788B1 (en) | 2000-02-25 | 2002-05-21 | Applied Materials, Inc. | Two etchant etch method |
JP2004526293A (ja) * | 2000-09-21 | 2004-08-26 | アプライド マテリアルズ インコーポレイテッド | チャンバ内の表面上へのプロセス残留分の堆積を減少させる装置及び方法 |
US20030000922A1 (en) * | 2001-06-27 | 2003-01-02 | Ramkumar Subramanian | Using scatterometry to develop real time etch image |
-
2002
- 2002-09-25 US US10/256,251 patent/US6939811B2/en not_active Expired - Lifetime
-
2003
- 2003-09-18 AT AT03759493T patent/ATE499701T1/de not_active IP Right Cessation
- 2003-09-18 CN CNB038253666A patent/CN100449706C/zh not_active Expired - Lifetime
- 2003-09-18 AU AU2003275221A patent/AU2003275221A1/en not_active Abandoned
- 2003-09-18 EP EP03759493A patent/EP1543547B1/en not_active Expired - Lifetime
- 2003-09-18 KR KR1020057005131A patent/KR101116589B1/ko active IP Right Grant
- 2003-09-18 DE DE60336150T patent/DE60336150D1/de not_active Expired - Lifetime
- 2003-09-18 JP JP2004539866A patent/JP2006500781A/ja active Pending
- 2003-09-18 WO PCT/US2003/030117 patent/WO2004030050A2/en active Application Filing
- 2003-09-23 TW TW092126217A patent/TWI324356B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010051436A (ko) * | 1999-11-05 | 2001-06-25 | 브라이언 알. 바흐맨 | 무산소 플라즈마법에서의 종말점 검출방법 |
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JP2006500781A (ja) | 2006-01-05 |
US6939811B2 (en) | 2005-09-06 |
WO2004030050A3 (en) | 2004-04-29 |
AU2003275221A8 (en) | 2004-04-19 |
CN100449706C (zh) | 2009-01-07 |
AU2003275221A1 (en) | 2004-04-19 |
ATE499701T1 (de) | 2011-03-15 |
US20040084406A1 (en) | 2004-05-06 |
EP1543547B1 (en) | 2011-02-23 |
TWI324356B (en) | 2010-05-01 |
WO2004030050A2 (en) | 2004-04-08 |
TW200411734A (en) | 2004-07-01 |
EP1543547A2 (en) | 2005-06-22 |
DE60336150D1 (de) | 2011-04-07 |
CN1701420A (zh) | 2005-11-23 |
KR20050047126A (ko) | 2005-05-19 |
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