KR101047933B1 - 연마 패드 및 반도체 장치의 제조 방법 - Google Patents

연마 패드 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR101047933B1
KR101047933B1 KR1020057009545A KR20057009545A KR101047933B1 KR 101047933 B1 KR101047933 B1 KR 101047933B1 KR 1020057009545 A KR1020057009545 A KR 1020057009545A KR 20057009545 A KR20057009545 A KR 20057009545A KR 101047933 B1 KR101047933 B1 KR 101047933B1
Authority
KR
South Korea
Prior art keywords
polishing
polishing pad
region
light transmitting
fine foam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057009545A
Other languages
English (en)
Korean (ko)
Other versions
KR20050085168A (ko
Inventor
마사히코 나카모리
데쓰오 시모무라
다카토시 야마다
가즈유키 오가와
아쓰시 가즈노
마사히로 와타나베
Original Assignee
도요 고무 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003000331A external-priority patent/JP3582790B2/ja
Application filed by 도요 고무 고교 가부시키가이샤 filed Critical 도요 고무 고교 가부시키가이샤
Publication of KR20050085168A publication Critical patent/KR20050085168A/ko
Application granted granted Critical
Publication of KR101047933B1 publication Critical patent/KR101047933B1/ko
Assigned to 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 reassignment 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 권리의 전부이전등록 Assignors: 도요 고무 고교 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020057009545A 2002-11-27 2003-11-27 연마 패드 및 반도체 장치의 제조 방법 Expired - Fee Related KR101047933B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2002343199 2002-11-27
JPJP-P-2002-00343199 2002-11-27
JPJP-P-2003-00000331 2003-01-06
JP2003000331A JP3582790B2 (ja) 2002-11-27 2003-01-06 研磨パッド及び半導体デバイスの製造方法
JP2003029477 2003-02-06
JPJP-P-2003-00029477 2003-02-06
JPJP-P-2003-00064653 2003-03-11
JP2003064653 2003-03-11
PCT/JP2003/015128 WO2004049417A1 (ja) 2002-11-27 2003-11-27 研磨パッド及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20050085168A KR20050085168A (ko) 2005-08-29
KR101047933B1 true KR101047933B1 (ko) 2011-07-11

Family

ID=32398174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057009545A Expired - Fee Related KR101047933B1 (ko) 2002-11-27 2003-11-27 연마 패드 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US8845852B2 (https=)
KR (1) KR101047933B1 (https=)
AU (1) AU2003302299A1 (https=)
TW (1) TW200416102A (https=)
WO (1) WO2004049417A1 (https=)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1739729B1 (en) * 2004-04-23 2012-03-28 JSR Corporation Polishing pad for semiconductor wafer, polishing multilayered body for semiconductor wafer having same, and method for polishing semiconductor wafer
USD560457S1 (en) * 2004-10-05 2008-01-29 Jsr Corporation Polishing pad
TWD111897S1 (zh) * 2004-10-05 2006-07-11 股份有限公司 研磨用墊片
USD559648S1 (en) * 2004-10-05 2008-01-15 Jsr Corporation Polishing pad
USD559066S1 (en) 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
KR100953928B1 (ko) 2004-12-10 2010-04-23 도요 고무 고교 가부시키가이샤 연마 패드 및 연마 패드의 제조 방법
JP4775881B2 (ja) * 2004-12-10 2011-09-21 東洋ゴム工業株式会社 研磨パッド
SG160368A1 (en) * 2005-03-08 2010-04-29 Toyo Tire & Rubber Co Polishing pad and process for producing the same
WO2006123559A1 (ja) 2005-05-17 2006-11-23 Toyo Tire & Rubber Co., Ltd. 研磨パッド
JP4884725B2 (ja) * 2005-08-30 2012-02-29 東洋ゴム工業株式会社 研磨パッド
JP5031236B2 (ja) * 2006-01-10 2012-09-19 東洋ゴム工業株式会社 研磨パッド
US20090093202A1 (en) * 2006-04-19 2009-04-09 Toyo Tire & Rubber Co., Ltd. Method for manufacturing polishing pad
JP5110677B2 (ja) * 2006-05-17 2012-12-26 東洋ゴム工業株式会社 研磨パッド
JP2007307639A (ja) * 2006-05-17 2007-11-29 Toyo Tire & Rubber Co Ltd 研磨パッド
CN102152233B (zh) * 2006-08-28 2013-10-30 东洋橡胶工业株式会社 抛光垫
JP5008927B2 (ja) 2006-08-31 2012-08-22 東洋ゴム工業株式会社 研磨パッド
JP4931133B2 (ja) * 2007-03-15 2012-05-16 東洋ゴム工業株式会社 研磨パッド
JP5078000B2 (ja) 2007-03-28 2012-11-21 東洋ゴム工業株式会社 研磨パッド
JP4971028B2 (ja) * 2007-05-16 2012-07-11 東洋ゴム工業株式会社 研磨パッドの製造方法
WO2008154185A2 (en) 2007-06-08 2008-12-18 Applied Materials, Inc. Thin polishing pad with window and molding process
US20090126495A1 (en) * 2007-11-15 2009-05-21 The Ultran Group, Inc. Ultrasonic Spectroscopic Method for Chemical Mechanical Planarization
US7967661B2 (en) * 2008-06-19 2011-06-28 Micron Technology, Inc. Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture
KR101587226B1 (ko) 2008-07-31 2016-01-20 신에쯔 한도타이 가부시키가이샤 웨이퍼의 연마 방법 및 양면 연마 장치
US9017140B2 (en) * 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
JP5528169B2 (ja) * 2010-03-26 2014-06-25 東洋ゴム工業株式会社 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法
JP5620141B2 (ja) 2010-04-15 2014-11-05 東洋ゴム工業株式会社 研磨パッド
US9156124B2 (en) * 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
US8657653B2 (en) 2010-09-30 2014-02-25 Nexplanar Corporation Homogeneous polishing pad for eddy current end-point detection
US8628384B2 (en) * 2010-09-30 2014-01-14 Nexplanar Corporation Polishing pad for eddy current end-point detection
KR101532990B1 (ko) 2011-09-22 2015-07-01 도요 고무 고교 가부시키가이샤 연마 패드
US9597769B2 (en) 2012-06-04 2017-03-21 Nexplanar Corporation Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
KR20240015167A (ko) 2014-10-17 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
JP6406238B2 (ja) * 2015-12-18 2018-10-17 株式会社Sumco ウェーハ研磨方法および研磨装置
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10213894B2 (en) 2016-02-26 2019-02-26 Applied Materials, Inc. Method of placing window in thin polishing pad
WO2018021428A1 (ja) * 2016-07-29 2018-02-01 株式会社クラレ 研磨パッドおよびそれを用いた研磨方法
DE102016116012A1 (de) 2016-08-29 2018-03-01 Lapmaster Wolters Gmbh Verfahren zum Messen der Dicke von flachen Werkstücken
US10875149B2 (en) * 2017-03-30 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for timed dispensing various slurry components
US10207388B2 (en) 2017-04-19 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aliphatic polyurethane optical endpoint detection windows and CMP polishing pads containing them
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
US10465097B2 (en) 2017-11-16 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aliphatic UV cured polyurethane optical endpoint detection windows with high UV transparency for CMP polishing pads
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
JP7105334B2 (ja) * 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー,リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法
KR102421208B1 (ko) 2020-09-10 2022-07-14 에스케이씨솔믹스 주식회사 연마 패드 및 이를 이용한 반도체 소자의 제조 방법
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
KR20240103803A (ko) * 2022-12-27 2024-07-04 세메스 주식회사 기판 처리 장치 및 방법
CN116749076A (zh) * 2023-05-15 2023-09-15 湖北鼎汇微电子材料有限公司 检测窗口、抛光垫及抛光系统
CN118404490B (zh) * 2024-07-01 2024-09-13 浙江求是半导体设备有限公司 一种抛光设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010089717A (ko) * 1999-03-31 2001-10-08 시마무라 테루오 연마체, 연마장치, 연마장치의 조정방법, 연마막 두께또는 연마종점의 측정방법, 및 반도체 디바이스의 제조방법
JP2001287158A (ja) * 1999-03-31 2001-10-16 Nikon Corp 研磨部材、研磨装置、調整方法、測定方法、半導体デバイス製造方法、及び半導体デバイス
JP2002001647A (ja) 2000-06-19 2002-01-08 Rodel Nitta Co 研磨パッド

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55106769A (en) 1979-01-31 1980-08-15 Masami Masuko Lapping method and its apparatus
JPS62174237A (ja) * 1985-10-19 1987-07-31 Asahi Chem Ind Co Ltd ポリオレフイン‐ポリスチレン混合樹脂発泡体
JPS63283857A (ja) * 1987-05-15 1988-11-21 Asahi Chem Ind Co Ltd 研磨布
US5081421A (en) 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
US5069002A (en) 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
JP3324235B2 (ja) 1993-11-10 2002-09-17 株式会社日立製作所 加工物の研磨方法及びその研磨装置並びにそれを用いた半導体基板
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
DE69635816T2 (de) 1995-03-28 2006-10-12 Applied Materials, Inc., Santa Clara Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
US5559428A (en) 1995-04-10 1996-09-24 International Business Machines Corporation In-situ monitoring of the change in thickness of films
JP3321338B2 (ja) 1995-07-24 2002-09-03 株式会社東芝 半導体装置の製造方法および製造装置
US5605760A (en) 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
JPH1177517A (ja) 1997-09-02 1999-03-23 Nikon Corp 研磨部材及び研磨装置
JP2000254860A (ja) 1999-03-08 2000-09-19 Nikon Corp 研磨装置
JP2000349053A (ja) 1999-06-07 2000-12-15 Asahi Chem Ind Co Ltd 溝付研磨パッド
US6171181B1 (en) * 1999-08-17 2001-01-09 Rodel Holdings, Inc. Molded polishing pad having integral window
JP4542647B2 (ja) 1999-09-21 2010-09-15 東洋ゴム工業株式会社 研磨パッド
JP3649385B2 (ja) 2000-01-12 2005-05-18 東洋ゴム工業株式会社 熱可塑性エラストマー微孔質発泡体、その製造方法および研磨シート
JP2001358101A (ja) 2000-06-13 2001-12-26 Toray Ind Inc 研磨パッド
JP2002009025A (ja) 2000-06-21 2002-01-11 Toray Ind Inc 研磨パッド
JP3788729B2 (ja) 2000-08-23 2006-06-21 東洋ゴム工業株式会社 研磨パッド
JP2002124496A (ja) 2000-10-18 2002-04-26 Hitachi Ltd 研磨加工の終点検出計測方法及びその装置、並びにそれを用いた半導体デバイスの製造方法及びその製造装置
JP3460712B2 (ja) 2000-12-01 2003-10-27 東洋紡績株式会社 研磨パッド用クッション層及びそれを用いた研磨パッド
CN100379522C (zh) * 2000-12-01 2008-04-09 东洋橡膠工业株式会社 研磨垫及其制造方法和研磨垫用缓冲层
JP2002192456A (ja) 2000-12-25 2002-07-10 Toyobo Co Ltd 研磨パッド
JP3306417B2 (ja) 2000-12-27 2002-07-24 東洋ゴム工業株式会社 半導体研磨用ポリウレタン研磨パッドを製造する方法
JP3359629B1 (ja) 2001-04-09 2002-12-24 東洋紡績株式会社 ポリウレタン組成物からなる研磨パッド
JP3956364B2 (ja) * 2001-04-09 2007-08-08 東洋ゴム工業株式会社 ポリウレタン組成物および研磨パッド
JP3826729B2 (ja) 2001-04-25 2006-09-27 Jsr株式会社 半導体ウエハ用研磨パッド及びこれを備える半導体ウエハ用研磨複層体並びに半導体ウエハの研磨方法
JP3826728B2 (ja) 2001-04-25 2006-09-27 Jsr株式会社 半導体ウエハ用研磨パッド及びこれを備える半導体ウエハ用研磨複層体並びに半導体ウエハの研磨方法
JP4131632B2 (ja) 2001-06-15 2008-08-13 株式会社荏原製作所 ポリッシング装置及び研磨パッド
JP2003048151A (ja) 2001-08-08 2003-02-18 Rodel Nitta Co 研磨パッド
JP2003133270A (ja) 2001-10-26 2003-05-09 Jsr Corp 化学機械研磨用窓材及び研磨パッド
KR100877385B1 (ko) * 2001-11-13 2009-01-07 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
CN1926666A (zh) * 2004-03-11 2007-03-07 东洋橡胶工业株式会社 研磨垫及半导体器件的制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010089717A (ko) * 1999-03-31 2001-10-08 시마무라 테루오 연마체, 연마장치, 연마장치의 조정방법, 연마막 두께또는 연마종점의 측정방법, 및 반도체 디바이스의 제조방법
JP2001287158A (ja) * 1999-03-31 2001-10-16 Nikon Corp 研磨部材、研磨装置、調整方法、測定方法、半導体デバイス製造方法、及び半導体デバイス
JP2002001647A (ja) 2000-06-19 2002-01-08 Rodel Nitta Co 研磨パッド

Also Published As

Publication number Publication date
WO2004049417A1 (ja) 2004-06-10
AU2003302299A1 (en) 2004-06-18
US20060037699A1 (en) 2006-02-23
AU2003302299A8 (en) 2004-06-18
KR20050085168A (ko) 2005-08-29
TW200416102A (en) 2004-09-01
TWI325800B (https=) 2010-06-11
US8845852B2 (en) 2014-09-30

Similar Documents

Publication Publication Date Title
KR101047933B1 (ko) 연마 패드 및 반도체 장치의 제조 방법
KR100817233B1 (ko) 연마 패드 및 반도체 디바이스의 제조 방법
KR101120533B1 (ko) 연마 패드
KR101055248B1 (ko) 연마 패드
KR101172324B1 (ko) 연마 패드 및 연마 패드의 제조 방법
KR101633745B1 (ko) 연마 패드
KR20100014817A (ko) 연마 패드의 제조 방법
JP2006110686A (ja) 研磨パッド
CN100349267C (zh) 研磨垫及半导体器件的制造方法
JP4744087B2 (ja) 研磨パッド及び半導体デバイスの製造方法
JP4849587B2 (ja) 研磨パッドおよび半導体デバイスの製造方法
JP4890744B2 (ja) 研磨パッドおよび半導体デバイスの製造方法
JP3582790B2 (ja) 研磨パッド及び半導体デバイスの製造方法
JP2006187837A (ja) 研磨パッド
JP2006128563A (ja) 半導体ウエハ研磨用研磨パッドおよび半導体デバイスの製造方法
JP4941735B2 (ja) 研磨パッドの製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140626

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150618

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20160616

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20170616

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20190617

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200705

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200705

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000