KR101040687B1 - 손상된 유전체 물질 및 막의 보상 및 회복 - Google Patents

손상된 유전체 물질 및 막의 보상 및 회복 Download PDF

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Publication number
KR101040687B1
KR101040687B1 KR1020057013622A KR20057013622A KR101040687B1 KR 101040687 B1 KR101040687 B1 KR 101040687B1 KR 1020057013622 A KR1020057013622 A KR 1020057013622A KR 20057013622 A KR20057013622 A KR 20057013622A KR 101040687 B1 KR101040687 B1 KR 101040687B1
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South Korea
Prior art keywords
containing silane
silanol groups
silane compound
organic moiety
moiety containing
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Expired - Fee Related
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KR1020057013622A
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English (en)
Korean (ko)
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KR20050095866A (ko
Inventor
웬야 팬
빅터 루
마이클 토마스
브라이언 다니엘
티파니 엔구옌
데링 쭈
아난스 나만
레이 진
아닐 바납
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허니웰 인터내셔널 인코포레이티드
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Publication of KR20050095866A publication Critical patent/KR20050095866A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057013622A 2003-01-25 2004-01-26 손상된 유전체 물질 및 막의 보상 및 회복 Expired - Fee Related KR101040687B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44247903P 2003-01-25 2003-01-25
US60/442,479 2003-01-25
US60/442,279 2003-01-25

Publications (2)

Publication Number Publication Date
KR20050095866A KR20050095866A (ko) 2005-10-04
KR101040687B1 true KR101040687B1 (ko) 2011-06-10

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KR1020057013622A Expired - Fee Related KR101040687B1 (ko) 2003-01-25 2004-01-26 손상된 유전체 물질 및 막의 보상 및 회복

Country Status (7)

Country Link
US (1) US7915181B2 (enExample)
EP (1) EP1588411A4 (enExample)
JP (1) JP4999454B2 (enExample)
KR (1) KR101040687B1 (enExample)
CN (1) CN1742363B (enExample)
TW (1) TWI335072B (enExample)
WO (1) WO2004068555A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002001621A2 (en) * 2000-06-23 2002-01-03 Honeywell International, Inc. Method to restore hydrophobicity in dielectric films and materials
US7709371B2 (en) 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
JP4999454B2 (ja) 2003-01-25 2012-08-15 ハネウェル・インターナショナル・インコーポレーテッド 損傷誘電体材料及び膜の修復及び回復
US8475666B2 (en) 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US7223704B2 (en) 2004-08-27 2007-05-29 Infineon Technologies Ag Repair of carbon depletion in low-k dielectric films
JP4591032B2 (ja) * 2004-10-15 2010-12-01 Ｊｓｒ株式会社 表面疎水化用組成物、表面疎水化方法および半導体装置の製造方法
US7163900B2 (en) * 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
US20060128163A1 (en) * 2004-12-14 2006-06-15 International Business Machines Corporation Surface treatment of post-rie-damaged p-osg and other damaged materials
JP5019714B2 (ja) * 2005-01-31 2012-09-05 大陽日酸株式会社 低誘電率膜のダメージ回復法
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
JP4716370B2 (ja) * 2006-03-27 2011-07-06 東京エレクトロン株式会社 低誘電率膜のダメージ修復方法及び半導体製造装置
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
JP2009164198A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置の製造方法
EP2406267B1 (en) 2009-03-10 2019-02-20 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Cyclic amino compounds for low-k silylation
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5404361B2 (ja) 2009-12-11 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
US8889544B2 (en) * 2011-02-16 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric protection layer as a chemical-mechanical polishing stop layer
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9029171B2 (en) 2012-06-25 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials
TW201403711A (zh) * 2012-07-02 2014-01-16 Applied Materials Inc 利用氣相化學暴露之低ｋ介電質損傷修復
US9330989B2 (en) 2012-09-28 2016-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for chemical-mechanical planarization of a metal layer
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102733881B1 (ko) 2016-09-12 2024-11-27 삼성전자주식회사 배선 구조체를 갖는 반도체 소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010101726A (ko) * 1999-01-26 2001-11-14 크리스 로저 에이취. 나노다공성 실리카필름의 표면개질을 위한 다관능성Ｓｉ-기제 올리고머/폴리머의 사용
KR20030062237A (ko) * 2000-06-23 2003-07-23 허니웰 인터내셔널 인코포레이티드 유전 필름에 소수성을 복원시키는 방법 및 물질
US6713382B1 (en) * 2001-01-31 2004-03-30 Advanced Micro Devices, Inc. Vapor treatment for repairing damage of low-k dielectric

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567221A (en) 1983-03-31 1986-01-28 Kuraray Co., Ltd. Water resistant compositions
US4654269A (en) 1985-06-21 1987-03-31 Fairchild Camera & Instrument Corp. Stress relieved intermediate insulating layer for multilayer metalization
US4624739A (en) 1985-08-09 1986-11-25 International Business Machines Corporation Process using dry etchant to avoid mask-and-etch cycle
WO1990010035A1 (en) 1989-03-01 1990-09-07 Raychem Corporation Method of curing organopolysiloxane compositions and compositions and articles therefrom
US5372851A (en) 1991-12-16 1994-12-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a chemically adsorbed film
JP2603017B2 (ja) 1991-12-16 1997-04-23 松下電器産業株式会社 化学吸着膜の製造方法
US5271777A (en) * 1991-12-17 1993-12-21 Hughes Aircraft Company High efficiency coil fabrication process
US5576247A (en) 1992-07-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
JP3219315B2 (ja) 1992-08-21 2001-10-15 大日本印刷株式会社 位相シフトマスクの白欠陥修正方法
US5429730A (en) 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
WO1994021386A2 (en) 1993-03-25 1994-09-29 Research Corporation Technologies, Inc. Polymers useful in forming self-assembled bonded anisotropic ultrathin layers and their use
JPH0766287A (ja) 1993-08-23 1995-03-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH07335758A (ja) 1994-04-15 1995-12-22 Matsushita Electric Ind Co Ltd 多層金属配線の形成方法
US5488015A (en) 1994-05-20 1996-01-30 Texas Instruments Incorporated Method of making an interconnect structure with an integrated low density dielectric
US5479727A (en) 1994-10-25 1996-01-02 Air Products And Chemicals, Inc. Moisture removal and passivation of surfaces
US5609629A (en) 1995-06-07 1997-03-11 Med Institute, Inc. Coated implantable medical device
US6258972B1 (en) 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
JP3618150B2 (ja) 1995-10-09 2005-02-09 松下電器産業株式会社 半導体装置及びその製造方法
EP0775669B1 (en) 1995-11-16 2001-05-02 Texas Instruments Incorporated Low volatility solvent-based precursors for nanoporous aerogels
JP3230182B2 (ja) 1996-02-29 2001-11-19 シャープ株式会社 半導体装置の製造方法
WO1997038355A1 (en) 1996-04-08 1997-10-16 Micrion Corporation Systems and methods for deposition of dielectric films
RU2089499C1 (ru) 1996-12-11 1997-09-10 Смирнов Александр Витальевич Способ получения гидрофобного дисперсного материала
KR19980064176A (ko) 1996-12-17 1998-10-07 윌리엄비.켐플러 집적 회로 유전체
US5750610A (en) 1997-02-24 1998-05-12 Dow Corning Corporation Hydrophobic organosilicate-modified silica gels
US5915175A (en) 1997-06-27 1999-06-22 Siemens Aktiengesellschaft Mitigation of CMP-induced BPSG surface damage by an integrated anneal and silicon dioxide deposition
DE69827259T2 (de) 1997-07-15 2006-02-16 Asahi Kasei Kabushiki Kaisha Zusammensetzungen aus alkoxysilan und organischem polymer zur herstellung von dünnen isolierenden schichten und deren verwendung
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6042994A (en) 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
EP1019954B1 (en) 1998-02-04 2013-05-15 Applied Materials, Inc. Method and apparatus for low-temperature annealing of electroplated copper micro-structures in the production of a microelectronic device
AU3055599A (en) 1998-04-01 1999-10-25 Asahi Kasei Kogyo Kabushiki Kaisha Method of manufacturing interconnection structural body
US6395651B1 (en) 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
US6410149B1 (en) * 1998-08-27 2002-06-25 Alliedsignal Inc. Silane-based nanoporous silica thin films and precursors for making same
US6037275A (en) 1998-08-27 2000-03-14 Alliedsignal Inc. Nanoporous silica via combined stream deposition
US6245690B1 (en) 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US6090724A (en) 1998-12-15 2000-07-18 Lsi Logic Corporation Method for composing a thermally conductive thin film having a low dielectric property
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
JP3266195B2 (ja) 1999-03-23 2002-03-18 日本電気株式会社 半導体装置の製造方法
US6029826A (en) * 1999-04-14 2000-02-29 Clay; Timothy H. Rotatable and releasable sports ball display mechanism
JP3229294B2 (ja) 1999-06-04 2001-11-19 キヤノン販売株式会社 被成膜面の改質方法及び半導体装置の製造方法
KR100333546B1 (ko) 1999-06-10 2002-04-24 박종섭 반도체소자의 제조방법
US6318124B1 (en) 1999-08-23 2001-11-20 Alliedsignal Inc. Nanoporous silica treated with siloxane polymers for ULSI applications
US6589889B2 (en) 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US6420193B1 (en) 2000-03-17 2002-07-16 Advance Micro Devices, Inc. Repair of film having an SI-O backbone
US6346490B1 (en) 2000-04-05 2002-02-12 Lsi Logic Corporation Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps
US6451512B1 (en) 2000-05-01 2002-09-17 Advanced Micro Devices, Inc. UV-enhanced silylation process to increase etch resistance of ultra thin resists
US6566283B1 (en) 2001-02-15 2003-05-20 Advanced Micro Devices, Inc. Silane treatment of low dielectric constant materials in semiconductor device manufacturing
KR100396889B1 (ko) 2001-03-08 2003-09-03 삼성전자주식회사 크랙방지층을 이용한 콘택 형성방법 및 이를 이용한반도체 소자
JP2002353308A (ja) 2001-05-28 2002-12-06 Toshiba Corp 半導体装置及びその製造方法
TW483099B (en) 2001-06-15 2002-04-11 United Microelectronics Corp Method to reduce moisture absorption of porous low dielectric constant film
DE10130824C2 (de) 2001-06-27 2003-12-18 Promos Technologies Inc Reparaturverfahren für einen dielektrischen Film mit einem Lochdefekt auf einem Substrat
US6879046B2 (en) 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
US6583067B2 (en) 2001-07-03 2003-06-24 United Microelectronics Corp. Method of avoiding dielectric layer deterioration with a low dielectric constant
US20030013211A1 (en) 2001-07-13 2003-01-16 Chu-Chun Hu Mend method for breakage dielectric film
TW495880B (en) 2001-08-30 2002-07-21 United Microelectronics Corp Method of repairing a low dielectric constant material layer
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
DE10145724A1 (de) 2001-09-17 2003-04-10 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiterstruktur unter Verwendung einer Schutzschicht und Halbleiterstruktur
JP2003142476A (ja) 2001-11-01 2003-05-16 Asahi Kasei Corp 絶縁薄膜用の多孔性シリカ薄膜
US6537919B1 (en) 2001-12-19 2003-03-25 Taiwan Semiconductor Manufacturing Company Process to remove micro-scratches
US7083991B2 (en) 2002-01-24 2006-08-01 Novellus Systems, Inc. Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments
CN1296771C (zh) 2002-03-04 2007-01-24 东京毅力科创株式会社 在晶片处理中低电介质材料的钝化方法
JP4025096B2 (ja) 2002-03-08 2007-12-19 株式会社荏原製作所 基板処理方法
US6607925B1 (en) 2002-06-06 2003-08-19 Advanced Micro Devices, Inc. Hard mask removal process including isolation dielectric refill
US20050229947A1 (en) 2002-06-14 2005-10-20 Mykrolis Corporation Methods of inserting or removing a species from a substrate
CA2497468C (en) 2002-08-14 2011-10-11 Applied Thin Films, Inc. Aluminum phosphate compounds, compositions, materials and related composites.
WO2004027850A1 (en) 2002-09-20 2004-04-01 Honeywell International, Inc. Interlayer adhesion promoter for low k materials
US7005390B2 (en) 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US6802944B2 (en) * 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7404990B2 (en) 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
JP4999454B2 (ja) 2003-01-25 2012-08-15 ハネウェル・インターナショナル・インコーポレーテッド 損傷誘電体材料及び膜の修復及び回復
US7709371B2 (en) 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US20040152296A1 (en) 2003-02-04 2004-08-05 Texas Instruments Incorporated Hexamethyldisilazane treatment of low-k dielectric films
JP2004266008A (ja) 2003-02-28 2004-09-24 Toshiba Corp 半導体装置の製造方法
US7442412B2 (en) 2003-05-08 2008-10-28 Texas Instruments Incorporated Hydrophobic coating for oxide surfaces
US7425505B2 (en) 2003-07-23 2008-09-16 Fsi International, Inc. Use of silyating agents
US7179758B2 (en) 2003-09-03 2007-02-20 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
US8475666B2 (en) 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
CN1839468B (zh) 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤
US7553769B2 (en) 2003-10-10 2009-06-30 Tokyo Electron Limited Method for treating a dielectric film
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US6821880B1 (en) 2003-12-01 2004-11-23 Taiwan Semiconductor Manufacturing Co. Ltd. Process of dual or single damascene utilizing separate etching and DCM apparati
JP2005294525A (ja) 2004-03-31 2005-10-20 Toshiba Corp 半導体装置の製造方法
US7109130B2 (en) 2004-05-04 2006-09-19 California Institute Of Technology Zeolite films for low k applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010101726A (ko) * 1999-01-26 2001-11-14 크리스 로저 에이취. 나노다공성 실리카필름의 표면개질을 위한 다관능성Ｓｉ-기제 올리고머/폴리머의 사용
US6770572B1 (en) * 1999-01-26 2004-08-03 Alliedsignal Inc. Use of multifunctional si-based oligomer/polymer for the surface modification of nanoporous silica films
KR20030062237A (ko) * 2000-06-23 2003-07-23 허니웰 인터내셔널 인코포레이티드 유전 필름에 소수성을 복원시키는 방법 및 물질
US6713382B1 (en) * 2001-01-31 2004-03-30 Advanced Micro Devices, Inc. Vapor treatment for repairing damage of low-k dielectric

Also Published As

Publication number Publication date
TW200428632A (en) 2004-12-16
CN1742363A (zh) 2006-03-01
US7915181B2 (en) 2011-03-29
EP1588411A4 (en) 2008-10-01
KR20050095866A (ko) 2005-10-04
JP4999454B2 (ja) 2012-08-15
CN1742363B (zh) 2010-10-13
EP1588411A2 (en) 2005-10-26
WO2004068555A2 (en) 2004-08-12
JP2006517347A (ja) 2006-07-20
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TWI335072B (en) 2010-12-21
US20060141641A1 (en) 2006-06-29

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