CN1742363B - 受损电介质材料和电介质膜的修复和恢复 - Google Patents

受损电介质材料和电介质膜的修复和恢复 Download PDF

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Publication number
CN1742363B
CN1742363B CN200480002723XA CN200480002723A CN1742363B CN 1742363 B CN1742363 B CN 1742363B CN 200480002723X A CN200480002723X A CN 200480002723XA CN 200480002723 A CN200480002723 A CN 200480002723A CN 1742363 B CN1742363 B CN 1742363B
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CN
China
Prior art keywords
reactive
silane compound
organic group
containing silane
silanol groups
Prior art date
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Expired - Fee Related
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CN200480002723XA
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English (en)
Chinese (zh)
Other versions
CN1742363A (zh
Inventor
W·范
V·卢
M·托马斯
B·丹尼尔斯
T·阮
D·L·周
A·纳曼
L·金
A·巴纳普
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Honeywell International Inc
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Honeywell International Inc
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Publication of CN1742363A publication Critical patent/CN1742363A/zh
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Publication of CN1742363B publication Critical patent/CN1742363B/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
CN200480002723XA 2003-01-25 2004-01-26 受损电介质材料和电介质膜的修复和恢复 Expired - Fee Related CN1742363B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44247903P 2003-01-25 2003-01-25
US60/442,279 2003-01-25
PCT/US2004/002252 WO2004068555A2 (en) 2003-01-25 2004-01-26 Repair and restoration of damaged dielectric materials and films

Publications (2)

Publication Number Publication Date
CN1742363A CN1742363A (zh) 2006-03-01
CN1742363B true CN1742363B (zh) 2010-10-13

Family

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CN200480002723XA Expired - Fee Related CN1742363B (zh) 2003-01-25 2004-01-26 受损电介质材料和电介质膜的修复和恢复

Country Status (7)

Country Link
US (1) US7915181B2 (enExample)
EP (1) EP1588411A4 (enExample)
JP (1) JP4999454B2 (enExample)
KR (1) KR101040687B1 (enExample)
CN (1) CN1742363B (enExample)
TW (1) TWI335072B (enExample)
WO (1) WO2004068555A2 (enExample)

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US8475666B2 (en) 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
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Publication number Publication date
TW200428632A (en) 2004-12-16
CN1742363A (zh) 2006-03-01
US7915181B2 (en) 2011-03-29
EP1588411A4 (en) 2008-10-01
KR20050095866A (ko) 2005-10-04
JP4999454B2 (ja) 2012-08-15
KR101040687B1 (ko) 2011-06-10
EP1588411A2 (en) 2005-10-26
WO2004068555A2 (en) 2004-08-12
JP2006517347A (ja) 2006-07-20
WO2004068555A3 (en) 2005-02-03
TWI335072B (en) 2010-12-21
US20060141641A1 (en) 2006-06-29

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