KR101032180B1 - 표면 형상 계측 장치, 노광 장치, 및 디바이스 제조 방법 - Google Patents

표면 형상 계측 장치, 노광 장치, 및 디바이스 제조 방법 Download PDF

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KR101032180B1
KR101032180B1 KR1020090017080A KR20090017080A KR101032180B1 KR 101032180 B1 KR101032180 B1 KR 101032180B1 KR 1020090017080 A KR1020090017080 A KR 1020090017080A KR 20090017080 A KR20090017080 A KR 20090017080A KR 101032180 B1 KR101032180 B1 KR 101032180B1
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South Korea
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light
substrate
film
measurement
surface shape
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English (en)
Korean (ko)
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KR20090093892A (ko
Inventor
와따루 야마구찌
다까히로 마쯔모또
히데끼 이나
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02055—Reduction or prevention of errors; Testing; Calibration
    • G01B9/02062—Active error reduction, i.e. varying with time
    • G01B9/02063—Active error reduction, i.e. varying with time by particular alignment of focus position, e.g. dynamic focussing in optical coherence tomography
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02055—Reduction or prevention of errors; Testing; Calibration
    • G01B9/0207—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer
    • G01B9/02072—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer by calibration or testing of interferometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70—Using polarization in the interferometer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090017080A 2008-02-28 2009-02-27 표면 형상 계측 장치, 노광 장치, 및 디바이스 제조 방법 Expired - Fee Related KR101032180B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008048176A JP5084558B2 (ja) 2008-02-28 2008-02-28 表面形状計測装置、露光装置及びデバイス製造方法
JPJP-P-2008-048176 2008-02-28

Publications (2)

Publication Number Publication Date
KR20090093892A KR20090093892A (ko) 2009-09-02
KR101032180B1 true KR101032180B1 (ko) 2011-05-02

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KR1020090017080A Expired - Fee Related KR101032180B1 (ko) 2008-02-28 2009-02-27 표면 형상 계측 장치, 노광 장치, 및 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US8564761B2 (enExample)
JP (1) JP5084558B2 (enExample)
KR (1) KR101032180B1 (enExample)
TW (1) TWI416272B (enExample)

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KR101041137B1 (ko) * 2009-03-25 2011-06-13 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
KR20100107253A (ko) * 2009-03-25 2010-10-05 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
JP5787483B2 (ja) 2010-01-16 2015-09-30 キヤノン株式会社 計測装置及び露光装置
TWI421469B (zh) * 2010-03-10 2014-01-01 Ind Tech Res Inst 表面量測裝置及其之量測方法及校正方法
JP5721420B2 (ja) 2010-12-17 2015-05-20 キヤノン株式会社 計測方法及び計測装置
NL2009273A (en) * 2011-08-31 2013-03-04 Asml Netherlands Bv Level sensor arrangement for lithographic apparatus, lithographic apparatus and device manufacturing method.
US20130208278A1 (en) * 2012-02-14 2013-08-15 Sahag DARDARIAN Alignment apparatus and method
KR101919901B1 (ko) 2012-05-10 2018-11-19 삼성전자 주식회사 웨이퍼 검사 방법
KR101625320B1 (ko) * 2012-10-12 2016-05-27 가부시기가이샤니레꼬 형상 계측 방법 및 형상 계측 장치
JP6025055B2 (ja) * 2013-03-12 2016-11-16 株式会社荏原製作所 研磨パッドの表面性状測定方法
JP6271896B2 (ja) 2013-07-22 2018-01-31 キヤノン株式会社 干渉計測装置、リソグラフィ装置および物品の製造方法
JP6345944B2 (ja) * 2014-02-21 2018-06-20 株式会社ミツトヨ 斜入射干渉計
KR102292209B1 (ko) * 2014-07-28 2021-08-25 삼성전자주식회사 반도체 계측 시스템 및 이를 이용한 반도체 소자의 계측 방법
JP6590599B2 (ja) * 2014-11-28 2019-10-16 キヤノン株式会社 位置決定装置、位置決定方法、リソグラフィ装置、および物品の製造方法
CN104482878A (zh) * 2014-12-04 2015-04-01 华中科技大学 一种纳米结构几何参数大面积在线测量装置及其测量方法
JP6665028B2 (ja) * 2015-06-18 2020-03-13 Ntn株式会社 形状測定装置およびそれを搭載した塗布装置
JP6682263B2 (ja) * 2015-12-25 2020-04-15 キヤノン株式会社 検出装置、露光装置および物品の製造方法
TWI573432B (zh) * 2016-05-04 2017-03-01 全友電腦股份有限公司 掃描具有深度影像之物件之影像掃瞄方法及其系統
KR101936792B1 (ko) 2017-08-25 2019-01-09 조선대학교산학협력단 간섭계와 타원계측기 기반의 박막 구조물 측정을 위한 광계측기
US10401286B1 (en) * 2018-03-23 2019-09-03 Intel Corporation Reflectivity analysis to determine material on a surface
CN111912785B (zh) * 2020-07-22 2023-06-23 深圳信息职业技术学院 一种光学常数测量方法与光学常数测量设备
JP7614858B2 (ja) * 2021-01-26 2025-01-16 キヤノン株式会社 検出装置、リソグラフィ装置、および物品製造方法
CN114256106B (zh) * 2021-12-13 2022-09-13 盐城矽润半导体有限公司 一种半导体贴装设备
TWI792828B (zh) * 2022-01-03 2023-02-11 力晶積成電子製造股份有限公司 微影方法

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JP2000105101A (ja) 1998-09-29 2000-04-11 Fuji Photo Optical Co Ltd 斜入射干渉計装置
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JPH095055A (ja) * 1995-06-20 1997-01-10 Nikon Corp 面傾斜検出装置
JP2000105101A (ja) 1998-09-29 2000-04-11 Fuji Photo Optical Co Ltd 斜入射干渉計装置
US6249351B1 (en) 1999-06-03 2001-06-19 Zygo Corporation Grazing incidence interferometer and method

Also Published As

Publication number Publication date
JP5084558B2 (ja) 2012-11-28
US20090219499A1 (en) 2009-09-03
JP2009204512A (ja) 2009-09-10
US8564761B2 (en) 2013-10-22
TW200947142A (en) 2009-11-16
KR20090093892A (ko) 2009-09-02
TWI416272B (zh) 2013-11-21

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