KR101023034B1 - 절연체상 실리콘 구조 및 방법 - Google Patents

절연체상 실리콘 구조 및 방법 Download PDF

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KR101023034B1
KR101023034B1 KR1020047017791A KR20047017791A KR101023034B1 KR 101023034 B1 KR101023034 B1 KR 101023034B1 KR 1020047017791 A KR1020047017791 A KR 1020047017791A KR 20047017791 A KR20047017791 A KR 20047017791A KR 101023034 B1 KR101023034 B1 KR 101023034B1
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insulator
layer
semiconductor
epitaxial
forming
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KR20050007472A (ko
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크리스워크호벤
이보라이즈마커
찬탈아레나
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에이에스엠 아메리카, 인코포레이티드
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020047017791A 2002-05-07 2003-05-07 절연체상 실리콘 구조 및 방법 Expired - Lifetime KR101023034B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37886802P 2002-05-07 2002-05-07
US60/378,868 2002-05-07
US45501803P 2003-03-12 2003-03-12
US60/455,018 2003-03-12
PCT/US2003/014314 WO2003096385A2 (en) 2002-05-07 2003-05-07 Silicon-on-insulator structures and methods

Publications (2)

Publication Number Publication Date
KR20050007472A KR20050007472A (ko) 2005-01-18
KR101023034B1 true KR101023034B1 (ko) 2011-03-24

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Country Link
US (1) US7452757B2 (https=)
EP (1) EP1502285A2 (https=)
JP (1) JP4951202B2 (https=)
KR (1) KR101023034B1 (https=)
WO (1) WO2003096385A2 (https=)

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