KR101015517B1 - 에칭 종점 판정 방법 - Google Patents

에칭 종점 판정 방법 Download PDF

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Publication number
KR101015517B1
KR101015517B1 KR1020080080828A KR20080080828A KR101015517B1 KR 101015517 B1 KR101015517 B1 KR 101015517B1 KR 1020080080828 A KR1020080080828 A KR 1020080080828A KR 20080080828 A KR20080080828 A KR 20080080828A KR 101015517 B1 KR101015517 B1 KR 101015517B1
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end point
plasma
etching
series data
time series
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KR20090092677A (ko
Inventor
히로시게 우치다
다이스케 시라이시
쇼지 이쿠하라
아키라 가고시마
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020080080828A 2008-02-27 2008-08-19 에칭 종점 판정 방법 Active KR101015517B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-00046533 2008-02-27
JP2008046533A JP5192850B2 (ja) 2008-02-27 2008-02-27 エッチング終点判定方法

Publications (2)

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KR20090092677A KR20090092677A (ko) 2009-09-01
KR101015517B1 true KR101015517B1 (ko) 2011-02-16

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KR1020080080828A Active KR101015517B1 (ko) 2008-02-27 2008-08-19 에칭 종점 판정 방법

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US (2) US8083960B2 (https=)
JP (1) JP5192850B2 (https=)
KR (1) KR101015517B1 (https=)
TW (1) TW200937518A (https=)

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JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
KR101117928B1 (ko) 2010-06-07 2012-02-29 명지대학교 산학협력단 플라즈마 공정 진단 시스템 및 이에 있어서 종료점 검출 방법 및 장치
JP5675195B2 (ja) 2010-07-20 2015-02-25 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
CN102812157B (zh) * 2010-11-30 2014-08-20 深圳市华星光电技术有限公司 金属蚀刻方法、金属蚀刻控制方法及其装置
JP5699795B2 (ja) * 2011-05-12 2015-04-15 富士通セミコンダクター株式会社 半導体装置の製造方法及半導体製造装置
JP6002487B2 (ja) 2012-07-20 2016-10-05 株式会社日立ハイテクノロジーズ 分析方法、分析装置、及びエッチング処理システム
CN104736744B (zh) * 2012-10-17 2017-06-06 东京毅力科创株式会社 使用多变量分析的等离子体蚀刻终点检测
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
JP6220319B2 (ja) * 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
KR101532897B1 (ko) * 2015-01-08 2015-07-02 성균관대학교산학협력단 플라즈마 식각 공정의 식각 종료점 진단방법
JP2016134530A (ja) 2015-01-20 2016-07-25 株式会社東芝 加工制御装置、加工制御プログラムおよび加工制御方法
JP6310866B2 (ja) 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
KR102953221B1 (ko) 2015-11-16 2026-04-15 도쿄엘렉트론가부시키가이샤 진보된 광학 센서 및 플라즈마 챔버용 방법
US10773282B2 (en) 2016-03-31 2020-09-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
WO2018094219A1 (en) 2016-11-18 2018-05-24 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
KR20190121864A (ko) 2017-03-17 2019-10-28 도쿄엘렉트론가부시키가이샤 에칭 메트릭 향상을 위한 표면 개질 제어
JP6875224B2 (ja) 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
TWI659258B (zh) * 2018-05-23 2019-05-11 亞智科技股份有限公司 蝕刻時間偵測方法及蝕刻時間偵測系統
TW202601068A (zh) 2019-05-23 2026-01-01 日商東京威力科創股份有限公司 光學偵測器、具有光學偵測器的系統、以及用於診斷、檢測、及測量的方法
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
JP7012900B1 (ja) * 2020-03-11 2022-01-28 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
DE102020107518A1 (de) 2020-03-18 2021-09-23 Aixtron Se Verfahren zum Ermitteln des Endes eines Reinigungsprozesses der Prozesskammer eines MOCVD-Reaktors
CN113447243B (zh) * 2020-05-26 2023-03-10 重庆康佳光电技术研究院有限公司 一种终点检测装置、蚀刻设备以及检测方法
CN114063479B (zh) * 2021-11-12 2024-01-23 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection

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KR20010078097A (ko) * 2000-01-28 2001-08-20 히가시 데쓰로 에칭 깊이 검출 방법
KR20010112490A (ko) * 1999-05-18 2001-12-20 히가시 데쓰로 에칭 종점 검출 방법

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JPH0268435U (https=) * 1988-11-11 1990-05-24
JPH03181129A (ja) * 1989-12-11 1991-08-07 Sumitomo Metal Ind Ltd エッチングの終点検知方法
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
JP3117355B2 (ja) * 1993-03-04 2000-12-11 東京エレクトロン株式会社 プラズマ処理の終点検出方法
US5728253A (en) * 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
JP3118743B2 (ja) * 1993-12-04 2000-12-18 東京エレクトロン株式会社 プラズマ処理装置
EP0735565B1 (en) * 1995-03-31 1999-06-02 International Business Machines Corporation Method and apparatus for monitoring the dry etching of a dielectric film to a given thickness
KR100411318B1 (ko) * 1998-02-03 2003-12-18 가가쿠 기쥬츠 신코 지교단 반도체 플라즈마 처리에 있어서의 종점 검출 방법
JP3884894B2 (ja) * 2000-03-01 2007-02-21 株式会社日立製作所 プラズマエッチング処理装置
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
JP2004079727A (ja) 2002-08-15 2004-03-11 Fujitsu Ltd エッチング終点検出方法、エッチング終点検出システム、エッチング装置、およびエッチング終点検出プログラム
JP4165638B2 (ja) * 2002-09-02 2008-10-15 東京エレクトロン株式会社 プロセスの監視方法及びプラズマ処理装置
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2008001670A1 (en) * 2006-06-30 2008-01-03 Oji Paper Co., Ltd. Monoparticulate-film etching mask and process for producing the same, process for producing fine structure with the monoparticulate-film etching mask, and fine structure obtained by the production process
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
KR100892248B1 (ko) * 2007-07-24 2009-04-09 주식회사 디엠에스 플라즈마 반응기의 실시간 제어를 실현하는 종말점 검출장치 및 이를 포함하는 플라즈마 반응기 및 그 종말점 검출방법
JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法

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KR20010112490A (ko) * 1999-05-18 2001-12-20 히가시 데쓰로 에칭 종점 검출 방법
KR20010078097A (ko) * 2000-01-28 2001-08-20 히가시 데쓰로 에칭 깊이 검출 방법

Also Published As

Publication number Publication date
KR20090092677A (ko) 2009-09-01
US8083960B2 (en) 2011-12-27
US20090211706A1 (en) 2009-08-27
TW200937518A (en) 2009-09-01
JP2009206275A (ja) 2009-09-10
TWI373806B (https=) 2012-10-01
JP5192850B2 (ja) 2013-05-08
US20120085494A1 (en) 2012-04-12

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