KR101005925B1 - 반도체 기판 세정액 조성물 - Google Patents

반도체 기판 세정액 조성물 Download PDF

Info

Publication number
KR101005925B1
KR101005925B1 KR1020040023443A KR20040023443A KR101005925B1 KR 101005925 B1 KR101005925 B1 KR 101005925B1 KR 1020040023443 A KR1020040023443 A KR 1020040023443A KR 20040023443 A KR20040023443 A KR 20040023443A KR 101005925 B1 KR101005925 B1 KR 101005925B1
Authority
KR
South Korea
Prior art keywords
cleaning liquid
semiconductor substrate
cleaning
liquid composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040023443A
Other languages
English (en)
Korean (ko)
Other versions
KR20040087893A (ko
Inventor
아베유미꼬
이시카와노리오
Original Assignee
간토 가가꾸 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 간토 가가꾸 가부시키가이샤 filed Critical 간토 가가꾸 가부시키가이샤
Publication of KR20040087893A publication Critical patent/KR20040087893A/ko
Application granted granted Critical
Publication of KR101005925B1 publication Critical patent/KR101005925B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/58—Cleaning of porous materials
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
KR1020040023443A 2003-04-09 2004-04-06 반도체 기판 세정액 조성물 Expired - Fee Related KR101005925B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00105728 2003-04-09
JP2003105728A JP4375991B2 (ja) 2003-04-09 2003-04-09 半導体基板洗浄液組成物

Publications (2)

Publication Number Publication Date
KR20040087893A KR20040087893A (ko) 2004-10-15
KR101005925B1 true KR101005925B1 (ko) 2011-01-06

Family

ID=32866753

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040023443A Expired - Fee Related KR101005925B1 (ko) 2003-04-09 2004-04-06 반도체 기판 세정액 조성물

Country Status (7)

Country Link
US (1) US7503982B2 (https=)
EP (1) EP1466963B1 (https=)
JP (1) JP4375991B2 (https=)
KR (1) KR101005925B1 (https=)
CN (1) CN100513544C (https=)
DE (1) DE602004003988T2 (https=)
TW (1) TWI356095B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1938885B (zh) 2004-03-30 2010-12-08 小山升 氧化还原活性可逆电极和使用该电极的二次电池
KR101232249B1 (ko) * 2004-08-10 2013-02-12 간또 가가꾸 가부시끼가이샤 반도체 기판 세정액 및 반도체 기판 세정방법
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
JP4876215B2 (ja) * 2005-01-21 2012-02-15 独立行政法人産業技術総合研究所 Ｃｍｐ研磨方法、ｃｍｐ研磨装置、及び半導体デバイスの製造方法
KR100630737B1 (ko) * 2005-02-04 2006-10-02 삼성전자주식회사 금속 ｃｍｐ 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법
US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US8623236B2 (en) * 2007-07-13 2014-01-07 Tokyo Ohka Kogyo Co., Ltd. Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
JP5561914B2 (ja) * 2008-05-16 2014-07-30 関東化学株式会社 半導体基板洗浄液組成物
JP5515588B2 (ja) * 2009-10-05 2014-06-11 栗田工業株式会社 ウエハ用洗浄水及びウエハの洗浄方法
US8128755B2 (en) 2010-03-03 2012-03-06 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cleaning solvent and cleaning method for metallic compound
JP5630385B2 (ja) * 2010-06-30 2014-11-26 セントラル硝子株式会社 保護膜形成用薬液及びウェハ表面の洗浄方法
JP2012017420A (ja) * 2010-07-08 2012-01-26 Neos Co Ltd 水溶性洗浄剤組成物
JP2012058273A (ja) * 2010-09-03 2012-03-22 Kanto Chem Co Inc フォトレジスト残渣およびポリマー残渣除去液組成物
JP5671962B2 (ja) * 2010-11-15 2015-02-18 栗田工業株式会社 シリコンウェハ洗浄用リンス液調製方法
JP2014210690A (ja) * 2013-04-22 2014-11-13 住友電気工業株式会社 炭化珪素基板の製造方法
CN108611199A (zh) * 2016-12-09 2018-10-02 段钰 一种高效强力清洗剂及其环保清洗工艺
CN110178204B (zh) 2017-01-17 2022-11-04 株式会社大赛璐 半导体基板清洗剂
CN109037025A (zh) * 2017-06-08 2018-12-18 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000206709A (ja) 1998-11-13 2000-07-28 Kao Corp 剥離剤組成物
JP2004094034A (ja) 2002-09-02 2004-03-25 Kao Corp 剥離剤組成物

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH122023A (de) 1926-12-27 1927-08-16 Richter Gutzwiller & Cie Verfahren zur Herstellung einer Parkettreinigungsmasse.
DE2155849C3 (de) * 1971-11-10 1979-07-26 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen
JPS5832669A (ja) * 1981-08-22 1983-02-25 Mitsubishi Pencil Co Ltd インク消去液
JPH02310092A (ja) * 1989-05-25 1990-12-25 Toyo Ink Mfg Co Ltd 平版印刷用湿し水組成物
US5503681A (en) * 1990-03-16 1996-04-02 Kabushiki Kaisha Toshiba Method of cleaning an object
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US7144848B2 (en) * 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
US6640816B2 (en) * 1999-01-22 2003-11-04 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6410494B2 (en) 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JP3219020B2 (ja) 1996-06-05 2001-10-15 和光純薬工業株式会社 洗浄処理剤
EP0839898A1 (en) * 1996-11-04 1998-05-06 The Procter & Gamble Company Self-thickened cleaning compositions
JP3165801B2 (ja) 1997-08-12 2001-05-14 関東化学株式会社 洗浄液
TW387936B (en) 1997-08-12 2000-04-21 Kanto Kagaku Washing solution
EP1080169A1 (en) * 1998-05-22 2001-03-07 The Procter & Gamble Company Acidic cleaning compositions with c10 alkyl sulfate detergent surfactant
US5928435A (en) * 1998-11-11 1999-07-27 Enthone-Omi, Inc. Method for removing organic coatings from substrates using carboxylic acids, organic solvents, and corrosion inhibitors
TW574634B (en) 1998-11-13 2004-02-01 Kao Corp Stripping composition for resist
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
AU6530000A (en) 1999-08-19 2001-03-19 Ashland Inc. Stripping and cleaning compositions
JP2002041393A (ja) 2000-07-21 2002-02-08 Nippon Telegr & Teleph Corp <Ntt> 通信ネットワークシステムを用いた情報配信方法
DE60124473T2 (de) * 2000-09-08 2007-09-06 Kanto Kagaku K.K. Ätzflüssigkeitszusammensetzung
US6699825B2 (en) * 2001-01-12 2004-03-02 S.C. Johnson & Son, Inc. Acidic hard-surface antimicrobial cleaner
TWI297102B (en) 2001-08-03 2008-05-21 Nec Electronics Corp Removing composition
WO2003065433A1 (fr) 2002-01-28 2003-08-07 Mitsubishi Chemical Corporation Detergent liquide pour substrat de dispositif semi-conducteur et procede de nettoyage
TWI339680B (en) * 2002-02-19 2011-04-01 Kanto Kagaku Washing liquid composition for semiconductor substrate
US7098181B2 (en) 2002-05-22 2006-08-29 Kao Corporation Liquid detergent composition
JP2005535784A (ja) * 2002-08-19 2005-11-24 伊默克化學科技股▲ふん▼有限公司 清浄液
US6696399B1 (en) * 2002-10-15 2004-02-24 Cleaning Systems, Inc. Cleaning composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000206709A (ja) 1998-11-13 2000-07-28 Kao Corp 剥離剤組成物
JP2004094034A (ja) 2002-09-02 2004-03-25 Kao Corp 剥離剤組成物

Also Published As

Publication number Publication date
US7503982B2 (en) 2009-03-17
JP4375991B2 (ja) 2009-12-02
DE602004003988T2 (de) 2007-06-21
US20040204329A1 (en) 2004-10-14
EP1466963B1 (en) 2007-01-03
TWI356095B (en) 2012-01-11
JP2004307725A (ja) 2004-11-04
DE602004003988D1 (de) 2007-02-15
EP1466963A1 (en) 2004-10-13
CN100513544C (zh) 2009-07-15
CN1542110A (zh) 2004-11-03
KR20040087893A (ko) 2004-10-15
TW200502381A (en) 2005-01-16

Similar Documents

Publication Publication Date Title
KR101005925B1 (ko) 반도체 기판 세정액 조성물
EP1888735B1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
KR101331747B1 (ko) 반도체 기판 처리 조성물
EP1336650B1 (en) Washing liquid composition for semiconductor substrate
US7468105B2 (en) CMP cleaning composition with microbial inhibitor
KR101874556B1 (ko) 구리 부식 억제 시스템
KR101166002B1 (ko) 반도체 디바이스용 기판 세정액 및 세정방법
KR100995316B1 (ko) Ｃｍｐ후 세정액 조성물
KR100748410B1 (ko) 기판표면 세정액 및 세정방법
US20080076688A1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
CN108473918B (zh) 用于化学机械抛光后清洁的组合物
KR20090119735A (ko) 반도체 기판 세정액 조성물
JP2002069495A (ja) 洗浄剤組成物
CN101233221A (zh) 铜钝化的化学机械抛光后清洗组合物及使用方法
KR102399811B1 (ko) 금속막 연마 후 세정액 조성물
KR102242969B1 (ko) 반도체 기판용 세정액 조성물
KR100672874B1 (ko) 표면의 오염 물질 제거 방법 및 이에 유용한 조성물
JP4718762B2 (ja) 半導体基板洗浄液組成物
CN1164724C (zh) 用于化学机械平坦化后的含水清洁液组合物
EP2687589A2 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2020059782A1 (ja) 洗浄液組成物

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20131220

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20141219

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20151218

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20161229

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20161229

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000