KR100970048B1 - 절연막의 제조방법, 반응장치, 발전장치 및 전자기기 - Google Patents

절연막의 제조방법, 반응장치, 발전장치 및 전자기기 Download PDF

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KR100970048B1
KR100970048B1 KR1020070083183A KR20070083183A KR100970048B1 KR 100970048 B1 KR100970048 B1 KR 100970048B1 KR 1020070083183 A KR1020070083183 A KR 1020070083183A KR 20070083183 A KR20070083183 A KR 20070083183A KR 100970048 B1 KR100970048 B1 KR 100970048B1
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film
metal substrate
insulating film
rare earth
forming
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KR20080020487A (ko
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데츠시 이시카와
츠요시 후지타
오사무 나카무라
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가시오게산키 가부시키가이샤
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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  • General Health & Medical Sciences (AREA)
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  • Hydrogen, Water And Hydrids (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
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KR1020070083183A 2006-08-30 2007-08-20 절연막의 제조방법, 반응장치, 발전장치 및 전자기기 Expired - Fee Related KR100970048B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00233849 2006-08-30
JP2006233849A JP4254823B2 (ja) 2006-08-30 2006-08-30 反応装置及び電子機器
JPJP-P-2006-00267832 2006-09-29
JP2006267832A JP4466629B2 (ja) 2006-08-30 2006-09-29 絶縁膜の製造方法
JP2007133587A JP4508212B2 (ja) 2006-08-30 2007-05-21 反応装置及び電子機器
JPJP-P-2007-00133587 2007-05-21

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1017086A3 (fr) * 2006-03-29 2008-02-05 Ct Rech Metallurgiques Asbl Procede de recuit et preparation en continu d'une bande en acier a haute resistance en vue de sa galvanisation au trempe.
JP4254823B2 (ja) 2006-08-30 2009-04-15 カシオ計算機株式会社 反応装置及び電子機器
PL2106195T3 (pl) * 2008-03-28 2010-09-30 Braun Gmbh Element grzewczy z czujnikiem temperatury
US8203105B2 (en) * 2008-07-18 2012-06-19 Advanced Materials Enterprises Company Limited Nano thickness heating material coated food warmer devices for hospital and elsewhere daily usage
JP5157740B2 (ja) * 2008-08-12 2013-03-06 カシオ計算機株式会社 サーミスタ兼電熱ヒータの製造方法
DE102009037148B4 (de) 2009-08-06 2014-02-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Festoxid-Brennstoffzellen-System
JP5729572B2 (ja) * 2011-01-31 2015-06-03 Toto株式会社 固体電解質材料およびこれを備えた固体酸化物形燃料電池
GB201101862D0 (en) 2011-02-03 2011-03-23 Univ Muenster Wilhelms Method and device
KR101818681B1 (ko) * 2011-07-25 2018-01-16 한국전자통신연구원 게터 내장형 전계방출 엑스선관 장치
JP6845143B2 (ja) * 2015-09-16 2021-03-17 Koa株式会社 水素センサ
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
US12406741B2 (en) 2022-08-10 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory devices with backside heater structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1020819A (ja) * 1996-07-08 1998-01-23 Casio Comput Co Ltd 発光表示素子
KR20000062364A (ko) * 1996-12-27 2000-10-25 부에트너 로버트 에이 절연전극을 가지는 전기로 및 용융금속을 제조하는 방법
JP2004283749A (ja) * 2003-03-24 2004-10-14 Casio Comput Co Ltd 反応装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617473B1 (en) * 1993-03-26 1999-01-13 Matsushita Electric Industrial Co., Ltd. Method of fabricating an oxide superconductor
JPH11503489A (ja) * 1995-02-02 1999-03-26 ハイドロ−ケベック ナノ結晶Ｍｇ基−材料及びその水素輸送と水素貯蔵への利用
JPH10269986A (ja) 1997-03-26 1998-10-09 Casio Comput Co Ltd 冷陰極及び冷陰極の製造方法並びに冷陰極蛍光管
US6281626B1 (en) * 1998-03-24 2001-08-28 Casio Computer Co., Ltd. Cold emission electrode method of manufacturing the same and display device using the same
JP2000281494A (ja) 1999-03-26 2000-10-10 Sony Corp 酸化物の結晶成長方法および酸化物積層構造
US6964826B2 (en) * 1999-04-12 2005-11-15 Ovonic Battery Company, Inc. Coated catalytic material with a metal phase in contact with a grain boundary oxide
US6506265B2 (en) * 2000-06-13 2003-01-14 Shin-Etsu Chemical Co., Ltd. R-Fe-B base permanent magnet materials
US6734453B2 (en) * 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
JP2004063131A (ja) 2002-07-25 2004-02-26 Casio Comput Co Ltd 化学反応装置及び燃料電池システム並びにその製造方法
JP4414780B2 (ja) * 2003-02-06 2010-02-10 大日本印刷株式会社 水素製造用のマイクロリアクターおよびその製造方法
JP4709005B2 (ja) * 2003-05-07 2011-06-22 財団法人国際超電導産業技術研究センター 希土類系酸化物超電導体及びその製造方法
AU2005229044B2 (en) * 2004-03-23 2010-08-12 Velocys, Inc. Protected alloy surfaces in microchannel apparatus and catalysts, alumina supported catalysts, catalyst intermediates, and methods of forming catalysts and microchannel apparatus
WO2006036193A1 (en) * 2004-03-23 2006-04-06 Velocys, Inc. Micro-channel reactor with catalysts applied directly to thermally-grown alumina, methods using same and oxidative dehydrogenation
US20070089806A1 (en) * 2005-10-21 2007-04-26 Rolf Blank Powders for rare earth magnets, rare earth magnets and methods for manufacturing the same
US7928317B2 (en) * 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
JP4254823B2 (ja) * 2006-08-30 2009-04-15 カシオ計算機株式会社 反応装置及び電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1020819A (ja) * 1996-07-08 1998-01-23 Casio Comput Co Ltd 発光表示素子
KR20000062364A (ko) * 1996-12-27 2000-10-25 부에트너 로버트 에이 절연전극을 가지는 전기로 및 용융금속을 제조하는 방법
JP2004283749A (ja) * 2003-03-24 2004-10-14 Casio Comput Co Ltd 反応装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
T.T.Basiev 외, "Hydration of Strontium Chloride and Rare-Earth Element Oxychlorides," Russian Journal of Applied Chemistry, Vol. 78 No. 7 pp. 1035~1037 (발표일 2005.10)*

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