JP4254823B2 - 反応装置及び電子機器 - Google Patents

反応装置及び電子機器 Download PDF

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Publication number
JP4254823B2
JP4254823B2 JP2006233849A JP2006233849A JP4254823B2 JP 4254823 B2 JP4254823 B2 JP 4254823B2 JP 2006233849 A JP2006233849 A JP 2006233849A JP 2006233849 A JP2006233849 A JP 2006233849A JP 4254823 B2 JP4254823 B2 JP 4254823B2
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Prior art keywords
film
insulating film
fuel
metal substrate
oxygen
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Expired - Fee Related
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JP2006233849A
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Japanese (ja)
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JP2008056521A5 (enExample
JP2008056521A (ja
Inventor
哲史 石川
剛司 藤田
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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Priority to JP2006233849A priority Critical patent/JP4254823B2/ja
Priority to JP2006267832A priority patent/JP4466629B2/ja
Priority to JP2007133587A priority patent/JP4508212B2/ja
Priority to US11/893,277 priority patent/US8097301B2/en
Priority to KR1020070083183A priority patent/KR100970048B1/ko
Publication of JP2008056521A publication Critical patent/JP2008056521A/ja
Publication of JP2008056521A5 publication Critical patent/JP2008056521A5/ja
Priority to KR1020090026504A priority patent/KR100924185B1/ko
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0093—Microreactors, e.g. miniaturised or microfabricated reactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/08—Oxides
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
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    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01M8/04007—Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids related to heat exchange
    • H01M8/04067—Heat exchange or temperature measuring elements, thermal insulation, e.g. heat pipes, heat pumps, fins
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    • H01M8/12—Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
    • H01M8/1286—Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Fuel Cell (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Insulating Bodies (AREA)
  • Formation Of Insulating Films (AREA)
JP2006233849A 2006-08-30 2006-08-30 反応装置及び電子機器 Expired - Fee Related JP4254823B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006233849A JP4254823B2 (ja) 2006-08-30 2006-08-30 反応装置及び電子機器
JP2006267832A JP4466629B2 (ja) 2006-08-30 2006-09-29 絶縁膜の製造方法
JP2007133587A JP4508212B2 (ja) 2006-08-30 2007-05-21 反応装置及び電子機器
US11/893,277 US8097301B2 (en) 2006-08-30 2007-08-15 Electrical insulation film manufacturing method
KR1020070083183A KR100970048B1 (ko) 2006-08-30 2007-08-20 절연막의 제조방법, 반응장치, 발전장치 및 전자기기
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US20080057196A1 (en) 2008-03-06
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KR20090046764A (ko) 2009-05-11
US8097301B2 (en) 2012-01-17
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